BTA216-600B,127 [NXP]
BTA216-600B;
| 型号： | BTA216-600B,127 |
| 厂家： | 
NXP |
| 描述： | BTA216-600B 局域网 三端双向交流开关 |
| 文件： | 总8页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ꢀDISCRETE SEMICONDUCTORSꢀ
DATA SHEET
BTA216 series B
Three quadrant triacs
high commutationꢀ
Product specification
October 1997
ꢁꢂꢃ Semiconductorsꢀ
Product specification
Three quadrant triacs
high commutation
BTA216 series B
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated high commutation
triacs in a plastic envelope intended
foruseincircuitswherehighstaticand
dynamic dV/dt and high dI/dt can
occur. These devices will commutate
the full rated rms current at the
maximum rated junction temperature,
without the aid of a snubber.
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
500B 600B 800B
BTA216-
Repetitive peak off-state
voltages
VDRM
500
600
800
V
IT(RMS)
ITSM
RMS on-state current
Non-repetitive peak on-state
current
16
140
16
140
16
140
A
A
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
main terminal 1
tab
T2
T1
2
main terminal 2
gate
3
G
1 2 3
tab main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
-500
5001
-600
-800
800
VDRM
Repetitive peak off-state
voltages
-
-
6001
IT(RMS)
ITSM
RMS on-state current
full sine wave;
Tmb ≤ 99 ˚C
full sine wave;
Tj = 25 ˚C prior to
surge
16
A
Non-repetitive peak
on-state current
t = 20 ms
t = 16.7 ms
t = 10 ms
ITM = 20 A; IG = 0.2 A;
dIG/dt = 0.2 A/μs
-
-
-
140
150
98
A
A
I2t
dIT/dt
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
A2s
A/μs
100
IGM
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
-
-
-
-
2
5
5
0.5
A
V
W
W
VGM
PGM
PG(AV)
over any 20 ms
period
Tstg
Tj
Storage temperature
Operating junction
temperature
-40
-
150
125
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/μs.
October 1997
1
Rev 1.200
ꢁꢂꢃ Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA216 series B
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Rth j-a
Thermal resistance full cycle
junction to mounting base half cycle
-
-
-
-
-
60
1.2
1.7
-
K/W
K/W
K/W
Thermal resistance
junction to ambient
in free air
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
IGT
Gate trigger current2
VD = 12 V; IT = 0.1 A
T2+ G+
T2+ G-
T2- G-
2
2
2
18
21
34
50
50
50
mA
mA
mA
IL
Latching current
VD = 12 V; IGT = 0.1 A
T2+ G+
T2+ G-
T2- G-
-
-
-
-
31
34
30
31
1.2
0.7
0.4
0.1
60
90
60
60
1.5
1.5
-
mA
mA
mA
mA
V
V
V
mA
IH
VT
VGT
Holding current
On-state voltage
Gate trigger voltage
VD = 12 V; IGT = 0.1 A
IT = 20 A
VD = 12 V; IT = 0.1 A
-
-
0.25
-
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C
Off-state leakage current VD = VDRM(max); Tj = 125 ˚C
ID
0.5
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
dVD/dt
dIcom/dt
tgt
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
Gate controlled turn-on
time
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform; gate open circuit
VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 16 A;
without snubber; gate open circuit
ITM = 20 A; VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/μs
1000 4000
-
-
-
V/μs
A/ms
μs
-
-
28
2
2 Device does not trigger in the T2-, G+ quadrant.
October 1997
2
Rev 1.200
ꢁꢂꢃ Semiconductors
ꢀProduct specification
Three quadrant triacs
high commutation
BTA216 series B
IT(RMS) / A
Tmb(max) / C
= 180
Ptot / W
20
15
10
5
25
95
99 C
101
107
20
1
120
90
15
10
5
60
30
113
119
125
0
0
-50
0
50
Tmb / C
100
150
0
5
10
IT(RMS) / A
15
20
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
Fig.4. Maximum permissible rms current IT(RMS)
versus mounting base temperature Tmb.
,
ITSM / A
IT(RMS) / A
1000
50
40
30
20
10
0
dIT/dt limit
100
I
TSM
time
I
T
T
Tj initial = 25 C max
10ms 100ms
10
10us
100us
1ms
T / s
0.01
0.1
surge duration / s
1
10
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 99˚C.
VGT(Tj)
VGT(25 C)
ITSM / A
150
100
50
1.6
1.4
1.2
1
I
TSM
time
I
T
T
Tj initial = 25 C max
0.8
0.6
0.4
0
1
10 100
Number of cycles at 50Hz
1000
-50
0
50
Tj / C
100
150
Fig.3. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
October 1997
3
Rev 1.200
ꢁꢂꢃ Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA216 series B
IGT(Tj)
IGT(25 C)
typ
IT / A
50
40
30
20
10
0
Tj = 125 C
Tj = 25 C
3
2.5
2
T2+ G+
T2+ G-
T2- G-
max
Vo = 1.195 V
Rs = 0.018 Ohms
1.5
1
0.5
0
0
0.5
1
1.5
VT / V
2
2.5
3
-50
0
50
Tj / C
100
150
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
IL(Tj)
IL(25 C)
Zth j-mb (K/W)
10
1
3
2.5
2
unidirectional
bidirectional
0.1
1.5
1
t
P
D
p
0.01
0.001
t
0.5
0
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
-50
0
50
Tj / C
100
150
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
IH(Tj)
dIcom/dt (A/ms)
1000
100
10
IH(25C)
3
2.5
2
1.5
1
0.5
0
1
20
40
60
80
100
120
140
-50
0
50
Tj / C
100
150
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
Fig.12. Typical, critical rate of change of commutating
current dIcom/dt versus junction temperature.
October 1997
4
Rev 1.200
ꢁꢂꢃ Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA216 series B
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
1 2 3
max
(2x)
0,9 max (3x)
0,6
2,4
2,54 2,54
Fig.13. TO220AB; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1997
5
Rev 1.200
NXP Semiconductors
Legal information
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
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and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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