BTA412Y-800C [NXP]
12 A Three-quadrant triacs, insulated, high commutation, high temperature; 12三象限三端双向可控硅，绝缘，高换向，高温
| 型号： | BTA412Y-800C |
| 厂家： | 
NXP |
| 描述： | 12 A Three-quadrant triacs, insulated, high commutation, high temperature |
| 文件： | 总12页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BTA412Y series B and C
12 A Three-quadrant triacs, insulated, high commutation, high
temperature
Rev. 01 — 3 October 2007
Product data sheet
1. Product profile
1.1 General description
Passivated, new generation, high commutation triacs in an internally insulated TO-220
plastic package
1.2 Features
I Very high commutation performance
I High immunity to dV/dt
I Isolated mounting base
I 2500 V RMS isolation voltage
I High operating junction temperature
1.3 Applications
I Heating and cooking appliances
I Non-linear rectifier-fed motor loads
I High power motor control e.g. vacuum I Electronic thermostats for heating and
cleaners
cooling loads
I Solid state relays
1.4 Quick reference data
I VDRM ≤ 600 V (BTA412Y-600B/C)
I VDRM ≤ 800 V (BTA412Y-800B/C)
I IT(RMS) ≤ 12 A
I IGT ≤ 50 mA (BTA412Y series B)
I IGT ≤ 35 mA (BTA412Y series C)
I ITSM ≤ 140 A (t = 20 ms)
BTA412Y series B and C
NXP Semiconductors
12 A 3-quadrant triacs, insulated, high commutation, high temperature
2. Pinning information
Table 1.
Pinning
Description
Pin
1
Simplified outline
Symbol
main terminal 1 (T1)
main terminal 2 (T2)
gate (G)
mb
T2
T1
G
2
3
sym051
mb
mounting base; isolated
1
2 3
SOT78D (TO-220)
3. Ordering information
Table 2.
Ordering information
Type number
Package
Name
Description
Version
BTA412Y-600B
BTA412Y-600C
BTA412Y-800B
BTA412Y-800C
TO-220
plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOT78D
3-lead TO-220
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
600
800
12
Unit
V
[1]
VDRM
repetitive peak off-state voltage
BTA412Y-600B; BTA412Y-600C
BTA412Y-800B; BTA412Y-800C
-
-
-
V
IT(RMS)
ITSM
RMS on-state current
full sine wave; Tmb ≤ 116 °C; see
Figure 4 and 5
A
non-repetitive peak on-state current full sine wave; Tj = 25 °C prior to
surge; see Figure 2 and 3
t = 20 ms
-
-
-
-
140
153
98
A
t = 16.7 ms
A
A2s
I2t
I2t for fusing
t = 10 ms
dIT/dt
rate of rise of on-state current
ITM = 20 A; IG = 0.2 A;
100
A/µs
dIG/dt = 0.2 A/µs
IGM
peak gate current
peak gate power
-
-
2
5
A
PGM
W
BTA412Y_SER_B_C_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 3 October 2007
2 of 12
BTA412Y series B and C
NXP Semiconductors
12 A 3-quadrant triacs, insulated, high commutation, high temperature
Table 3.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
PG(AV)
Tstg
Parameter
Conditions
Min
Max
0.5
Unit
W
average gate power
storage temperature
junction temperature
over any 20 ms period
-
−40
+150
150
°C
Tj
-
°C
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/µs.
003aab810
16
α = 180°
conduction form
Ptot
(W)
angle
(degrees)
factor
a
120°
90°
60°
30°
12
30
60
90
120
180
4
2.8
2.2
1.9
1.57
α
8
4
0
0
3
6
9
12
IT(RMS) (A)
α = conduction angle
Fig 1. Total power dissipation as a function of RMS on-state current; maximum values
003aab811
160
ITSM
(A)
120
80
40
0
I
I
TSM
t
T
1/f
= 25 °C max
T
j(init)
1
10
102
103
number of cycles (n)
f = 50 Hz
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA412Y_SER_B_C_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 3 October 2007
3 of 12
BTA412Y series B and C
NXP Semiconductors
12 A 3-quadrant triacs, insulated, high commutation, high temperature
003aab812
103
ITSM
(A)
(1)
102
I
I
TSM
t
T
t
p
T
= 25 °C max
j(init)
10
10-5
10-4
10-3
10-2
10-1
tp (s)
tp ≤ 20 ms
(1) dIT/dt limit
Fig 3. Non-repetitive peak on-state current as a function of pulse duration; maximum values
003aab813
003aab814
40
IT(RMS)
(A)
15
IT(RMS)
(A)
30
20
10
0
10
5
0
-50
10-2
10-1
1
10
0
50
100
150
mb (°C)
surge duration (s)
T
f = 50 Hz
Tmb = 116 °C
Fig 4. RMS on-state current as a function of surge
duration; maximum values
Fig 5. RMS on-state current as a function of mounting
base temperature; maximum values
BTA412Y_SER_B_C_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 3 October 2007
4 of 12
BTA412Y series B and C
NXP Semiconductors
12 A 3-quadrant triacs, insulated, high commutation, high temperature
5. Thermal characteristics
Table 4.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from junction to full cycle; see Figure 6
mounting base
-
-
2.1
K/W
Rth(j-a)
thermal resistance from junction to in free air
ambient
-
60
-
K/W
003aab815
10
Z
th(j-mb)
(K/W)
1
−1
−2
−3
10
10
10
P
t
t
p
−5
−4
−3
−2
−1
10
10
10
10
10
1
10
t
(s)
p
Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse duration
6. Isolation characteristics
Table 5.
Isolation limiting values and characteristics
Th = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Visol(RMS)
RMS isolation voltage from all three terminals to
external heatsink; f = 50 Hz to
-
-
2500
V
60 Hz; sinusoidal waveform;
RH ≤ 65 %; clean and dust free
Cisol
isolation capacitance from pin 2 to external heatsink;
f = 1 MHz
-
10
-
pF
BTA412Y_SER_B_C_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 3 October 2007
5 of 12
BTA412Y series B and C
NXP Semiconductors
12 A 3-quadrant triacs, insulated, high commutation, high temperature
7. Static characteristics
Table 6.
Static characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
BTA412Y-600B
BTA412Y-800B
BTA412Y-600C
BTA412Y-800C
Unit
Min
Typ
Max Min
Typ
Max
IGT
gate trigger
current
VD = 12 V; IT = 0.1 A; see Figure 8
T2+ G+
T2+ G−
T2− G−
2
2
2
-
-
-
50
50
50
2
2
2
-
-
-
35
35
35
mA
mA
mA
IL
latching current VD = 12 V; IGT = 0.1 A; see Figure 10
T2+ G+
-
-
-
-
-
-
60
90
60
60
1.5
-
-
-
-
-
-
50
60
50
35
1.5
mA
mA
mA
mA
V
T2+ G−
T2− G−
-
-
-
-
IH
holding current VD = 12 V; IGT = 0.1 A; see Figure 11
-
-
VT
on-state
voltage
IT = 18 A; see Figure 9
1.3
1.3
VGT
gate trigger
voltage
VD = 12 V; IT = 0.1 A; see Figure 7
-
0.8
1.5
-
-
0.8
1.5
-
V
VD = 400 V; IT = 0.1 A; Tj = 150 °C
0.25 0.4
0.25 0.4
V
ID
off-state current VD = VDRM(max); Tj = 125 °C
VD = VDRM(max); Tj = 150 °C
-
-
0.1
0.4
0.5
2
-
-
0.1
0.4
0.5
2
mA
mA
BTA412Y_SER_B_C_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 3 October 2007
6 of 12
BTA412Y series B and C
NXP Semiconductors
12 A 3-quadrant triacs, insulated, high commutation, high temperature
8. Dynamic characteristics
Table 7.
Dynamic characteristics
Symbol Parameter
Conditions
BTA412Y-600B
BTA412Y-800B
BTA412Y-600C
BTA412Y-800C
Unit
Min
Typ
Max Min
Typ
Max
dVD/dt rate of rise of
off-state
V
DM = 0.67 × VDRM(max); Tj = 125 °C;
1000
600
20
8
-
-
-
-
-
-
500
300
15
6
-
-
-
-
-
-
V/µs
V/µs
A/ms
A/ms
µs
exponential waveform; gate open circuit
voltage
VDM = 0.67 × VDRM(max); Tj = 150 °C;
exponential waveform; gate open circuit
-
-
dIcom/dt rate of change
V
DM = 400 V; Tj = 125 °C; IT(RMS) = 12 A;
-
-
of
without snubber; gate open circuit
commutating
current
VDM = 400 V; Tj = 150 °C; IT(RMS) = 12 A;
without snubber; gate open circuit
-
-
tgt
gate-controlled ITM = 20 A; VD = VDRM(max); IG = 0.1 A;
turn-on time dIG/dt = 5 A/µs
-
2
-
2
001aag168
001aag165
3
1.6
I
V
GT
GT
(1)
(2)
I
V
GT(25°C)
GT(25°C)
2
1.2
(3)
1
0.8
0
−50
0.4
−50
0
50
100
150
0
50
100
150
T (°C)
j
T (°C)
j
(1) T2− G−
(2) T2+ G−
(3) T2+ G+
Fig 7. Normalized gate trigger voltage as a function of
junction temperature
Fig 8. Normalized gate trigger current as a function of
junction temperature
BTA412Y_SER_B_C_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 3 October 2007
7 of 12
BTA412Y series B and C
NXP Semiconductors
12 A 3-quadrant triacs, insulated, high commutation, high temperature
001aag166
003aab666
3
50
IT
(A)
I
L
I
L(25°C)
40
30
20
10
0
2
(1)
(2)
(3)
1
0
0
0.5
1
1.5
2
−50
0
50
100
150
V
T (V)
T (°C)
j
Vo = 1.024 V
Rs = 0.021 Ω
(1) Tj = 150 °C; typical values
(2) Tj = 150 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig 9. On-state current as a function of on-state
voltage
Fig 10. Normalized latching current as a function of
junction temperature
001aag167
3
I
H
I
H(25°C)
2
1
0
−50
0
50
100
150
T (°C)
j
Fig 11. Normalized holding current as a function of junction temperature
BTA412Y_SER_B_C_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 3 October 2007
8 of 12
BTA412Y series B and C
NXP Semiconductors
12 A 3-quadrant triacs, insulated, high commutation, high temperature
9. Package outline
Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220
SOT78D
E
A
A
p
1
mounting
base
q
D
1
D
L
1
Q
b
2
L
b
1
1
2
3
M
w
c
b
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
L
D
ref
1
1
UNIT
A
A
1
b
b
b
2
c
D
E
e
L
p
Q
q
w
1
ref
4.7
4.3
1.40
1.25
0.9
0.6
1.4
1.1
1.72
1.32
0.6
0.4
16.0
15.2
10.3
9.7
14.0
12.8
3.7
3.5
2.6
2.2
3.0
2.7
mm
6.5
2.54
3.0
0.2
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
07-04-04
07-07-10
SOT78D
TO-220
Fig 12. Package outline SOT78D (3-lead TO-220)
BTA412Y_SER_B_C_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 3 October 2007
9 of 12
BTA412Y series B and C
NXP Semiconductors
12 A 3-quadrant triacs, insulated, high commutation, high temperature
10. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BTA412Y_SER_B_C_1
20071003
Product data sheet
-
-
BTA412Y_SER_B_C_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 3 October 2007
10 of 12
BTA412Y series B and C
NXP Semiconductors
12 A 3-quadrant triacs, insulated, high commutation, high temperature
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of a NXP Semiconductors product can reasonably be expected to
11.2 Definitions
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
12. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
BTA412Y_SER_B_C_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 3 October 2007
11 of 12
BTA412Y series B and C
NXP Semiconductors
12 A 3-quadrant triacs, insulated, high commutation, high temperature
13. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
Isolation characteristics . . . . . . . . . . . . . . . . . . 5
Static characteristics. . . . . . . . . . . . . . . . . . . . . 6
Dynamic characteristics . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
3
4
5
6
7
8
9
10
11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
11.1
11.2
11.3
11.4
12
13
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 3 October 2007
Document identifier: BTA412Y_SER_B_C_1
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