BU2530AW [NXP]
Silicon Diffused Power Transistor; 硅扩散型功率晶体管
| 型号： | BU2530AW |
| 厂家： | 
NXP |
| 描述： | Silicon Diffused Power Transistor |
| 文件： | 总6页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2530AW
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in
horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
QUICK REFERENCE DATA
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
VCESM
VCEO
IC
Collector-emitter voltage peak value
VBE = 0
-
-
1500
800
16
V
V
Collector-emitter voltage (open base)
Collector current (DC)
-
A
ICM
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
-
40
A
Ptot
T
mb ≤ 25 ˚C
-
125
5.0
-
W
V
VCEsat
ICsat
ts
IC = 9.0 A; IB = 1.64 A
-
9
3.5
A
ICsat = 9.0 A; IB(end) = 1.3 A
4.5
µs
PINNING - SOT429
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
c
base
2
collector
emitter
b
3
tab collector
2
1
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
VCESM
VCEO
IC
Collector-emitter voltage peak value
VBE = 0 V
-
1500
800
16
V
V
Collector-emitter voltage (open base)
Collector current (DC)
-
-
A
ICM
Collector current peak value
Base current (DC)
-
40
A
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
-
10
15
200
10
125
150
150
A
Base current peak value
Reverse base current
-
A
average over any 20 ms period
-
mA
A
Reverse base current peak value 1
Total power dissipation
Storage temperature
-
-
Tmb ≤ 25 ˚C
W
˚C
˚C
-55
-
Junction temperature
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Rth j-mb
Rth j-a
Junction to mounting base
Junction to ambient
-
-
1.0
-
K/W
K/W
in free air
45
1 Turn-off current.
September 1997
1
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2530AW
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICES
ICES
Collector cut-off current 2
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax
Tj = 125 ˚C
-
-
-
-
1.0
2.0
mA
mA
;
IEBO
Emitter cut-off current
VEB = 7.5 V; IC = 0 A
IB = 1 mA
-
7.5
-
-
14
-
1.0
-
5.0
1.0
27
10
mA
V
V
V
BVEBO
VCEsat
VBEsat
hFE
Base-emitter breakdown voltage
Collector-emitter saturation voltage IC = 9.0 A; IB = 1.64 A
Base-emitter saturation voltage
DC current gain
IC = 9.0 A; IB = 1.64 A
IC = 1 A; VCE = 5 V
IC = 9 A; VCE = 5 V
0.825 0.91
9
5.5
17
8
hFE
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Switching times (32 kHz line
deflection dynamic test circuit).
ICsat = 9.0 A; LC = 200 µH; Cfb = 13 nF;
VCC = 138 V; IB(end) = 1.3 A;
-IBM = 4.5 A; -VBB = 4 V; LB = 1 µH
ts
tf
Turn-off storage time
Turn-off fall time
3.5
0.14
4.5
0.25
µs
µs
ICsat
ICsat
90 %
TRANSISTOR
DIODE
IC
IB
t
t
IC
IBend
10 %
tf
t
t
ts
10us
13us
32us
IB
IBend
VCE
- IBM
t
Fig.1. Switching times waveforms.
Fig.2. Switching times definitions.
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2530AW
+ 150 v nominal
adjust for ICsat
VCEsat / V
10
1
Tj = 85 C
Tj = 25 C
Lc
IC/IB = 10
IC/IB = 5
LB
T.U.T.
0.1
IBend
-VBB
Cfb
0.01
0.1
1
10
100
IC / A
Fig.3. Switching times test circuit.
Fig.6. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
VBEsat / V
hFE
1
0.9
0.8
0.7
0.6
100
VCE = 1 V
IC = 9 A
Tj = 85 C
Tj = 25 C
10
IC = 7 A
Tj = 85 C
Tj = 25 C
1
0.01
0.1
1
10
100
0
1
2
3
4
IC / A
IB / A
Fig.4. High and low DC current gain. hFE = f (IC)
VCE = 1 V
Fig.7. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
PTOT / W
hFE
100
10
1
100
10
1
VCE = 5 V
Tj = 85 C
Tj = 25 C
Tj = 85 C
Tj = 25 C
0.01
0.1
1
10
100
0
1
2
3
4
IC / A
IB / A
Fig.5. High and low DC current gain. hFE = f (IC)
VCE = 5 V
Fig.8. Typical turn-off losses.
PTOT = f (IB); parameter IC; f = 32 kHz
September 1997
3
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2530AW
VCC
ts/tf / us
10
8
LC
6
VCL
CFB
IBend
-VBB
4
LB
T.U.T.
2
0
0
1
2
3
4
IB / A
Fig.12. Test Circuit RBSOA. VCC = 150 V;
-VBB = 1 - 5 V;
LC = 1.5 mH; VCL = 1450 V; LB = 1 - 3 µH;
CFB = 1 - 10 nF; IB(end) = 1.3 - 2.6 A
Fig.9. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 32 kHz
Normalised Power Derating
PD%
IC / A
120
110
100
90
80
70
60
50
40
30
20
10
0
40
30
20
10
0
Area where
fails occur
0
20
40
60
80
Tmb /
100
120
140
100
1000
1500
C
VCE / V
Fig.10. Normalised power dissipation.
PD% = 100 PD/PD 25˚C = f (Tmb)
Fig.13. Reverse bias safe operating area. Tj ≤ Tjmax
Zth / K/W
10
1
0.5
0.2
0.1
0.1
0.05
t
T
p
t
p
0.02
P
D =
D
0.01
0.001
t
T
D = 0
1.0E-06
1E-04
1E-02
1E+00
t / s
Fig.11. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
September 1997
4
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2530AW
MECHANICAL DATA
Dimensions in mm
16 max
5.3 max
1.8
Net Mass: 5 g
o
3.5
max
5.3
7.3
3.5
21
max
seating
plane
15.5
max
2.5
4.0
max
15.5
min
1
2
3
0.9 max
2.2 max
3.2 max
1.1
0.4 M
5.45 5.45
Fig.14. SOT429; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT429 envelope.
2. Epoxy meets UL94 V0 at 1/8".
September 1997
5
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2530AW
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997
6
Rev 1.000
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