BU4506AF [NXP]

Silicon Diffused Power Transistor; 硅扩散型功率晶体管


型号：	BU4506AF
厂家：	NXP
描述：	Silicon Diffused Power Transistor 硅扩散型功率晶体管晶体晶体管功率双极晶体管
文件：	总6页 (文件大小：47K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU4506AF

GENERAL DESCRIPTION

Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack

envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional

tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.

QUICK REFERENCE DATA

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

V_CESM

V_CEO

I_C

Collector-emitter voltage peak value

V_BE= 0 V

1500

800

Collector-emitter voltage (open base)

Collector current (DC)

I_CM

Collector current peak value

Total power dissipation

Collector-emitter saturation voltage

Collector saturation current

Fall time

P_tot

T_hs≤ 25 ˚C

3.0

V_CEsat

I_Csat

t_f

I_C= 3 A; I_B= 0.75 A

f = 16 kHz

3.0

300

I_Csat= 3.0 A;f = 16 kHz

450

PINNING - SOT199

PIN CONFIGURATION

SYMBOL

DESCRIPTION

case

base

collector

emitter

case isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN. MAX. UNIT

V_CESM

V_CEO

I_C

Collector-emitter voltage peak value

V_BE= 0 V

1500

800

Collector-emitter voltage (open base)

Collector current (DC)

I_CM

I_B

Collector current peak value

Base current (DC)

I_BM

Base current peak value

Reverse base current peak value ¹

Total power dissipation

-I_BM

P_tot

T_stg

T_j

T_hs≤ 25 ˚C

150

˚C

Storage temperature

Junction temperature

-65

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

R_{th j-hs}

R_{th j-a}

Junction to heatsink

Junction to ambient

with heatsink compound

in free air

2.8

K/W

1 Turn-off current.

July 1999

Rev 1.000

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU4506AF

ISOLATION LIMITING VALUE & CHARACTERISTIC

T_hs= 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V_isol

C_isol

Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree

2500

three terminals to external

heatsink

Capacitance from T2 to external f = 1 MHz

heatsink

STATIC CHARACTERISTICS

T_hs= 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

I_CES

Collector cut-off current ²

V_BE= 0 V; V_CE= V_CESMmax

T_j= 125 ˚C

1.0

2.0

;

BV_EBO

V_CEOsust

Emitter-base breakdown voltage

I_B= 1 mA

7.5

800

13.5

Collector-emitter sustaining voltage I_B= 0 A; I_C= 100 mA;

L = 25 mH

V_CEsat

V_BEsat

h_FE

Collector-emitter saturation voltage I_C= 3.0 A; I_B= 0.75 A

3.0

0.98

Base-emitter saturation voltage

DC current gain

I_C= 3.0 A; I_B= 0.75 A

I_C= 0.5 A; V_CE= 5 V

I_C= 3 A; V_CE= 5 V

0.8

0.89

h_FE

4.2

5.5

7.3

DYNAMIC CHARACTERISTICS

T_hs= 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

Switching times (16kHz line

deflection circuit)

Turn-off storage time

Turn-off fall time

I_Csat= 3.0 A; I_B1= 0.6 A; (I_B2= -1.5 A)

t_s

t_f

3.7

300

4.6

450

µs

IC / mA

+ 50v

100-200R

250

200

Horizontal

Oscilloscope

100

Vertical

100R

min

VCE / V

30-60 Hz

VCEOsust

Fig.1. Test circuit for V_CEOsust

Fig.2. Oscilloscope display for V_CEOsust.

2 Measured with half sine-wave voltage (curve tracer).

July 1999

Rev 1.000

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU4506AF

hFE

ICsat

TRANSISTOR

100

Ths = 25 C

Ths = 85 C

DIODE

VCE = 1 V

IB1

20us

26us

64us

IB2

VCE

0.01

0.1

IC / A

Fig.3. Switching times waveforms (16 kHz).

Fig.6. High and low DC current gain.

hFE

ICsat

90 %

100

Ths = 25 C

Ths = 85 C

VCE = 5 V

10 %

IB1

0.01

- IB2

0.1

IC / A

Fig.4. Switching times definitions.

Fig.7. High and low DC current gain.

VCESAT / V

Ths = 25 C

Ths = 85 C

+ 150 v nominal

adjust for ICsat

0.8

0.6

0.4

0.2

T.U.T.

IBend

-VBB

Cfb

0.1

IC / A

Fig.5. Switching times test circuit.

Fig.8. Typical collector-emitter saturation voltage.

July 1999

Rev 1.000

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU4506AF

Normalised Power Derating

with heatsink compound

VBESAT / V

PD%

120

110

100

1.2

Ths = 25 C

Ths = 85 C

1.1

0.9

IC = 3 A

0.8

0.7

0.6

Ths /

100

120

140

IB / A

Fig.9. Typical base-emitter saturation voltage.

Fig.11. Normalised power dissipation.

PD% = 100 P_D/P_{D 25˚C}

ts/tf/ us

ICsat = 3 A

BU4506DF/DX

Zth (K/W)

Ths = 85 C

Freq = 16 kHz

D = 0.5

0.2

0.1

0.05

0.1

0.02

D = tp/T

D = 0

0.01

0.001

1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01

t / s

0.5

1.5

IB / A

Fig.10. Typical collector storage and fall time.

I_C=3 A; T_j= 85˚C; f = 16kHz

Fig.12. Transient thermal impedance.

July 1999

Rev 1.000

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU4506AF

MECHANICAL DATA

Dimensions in mm

15.3 max

5.2 max

Net Mass: 5.5 g

3.1

3.3

0.7

7.3

3.2

6.2

5.8

21.5

max

seating

plane

3.5 max

not tinned

3.5

15.7

min

1.2

1.0

0.7 max

2.0

2.1 max

0.4

5.45

Fig.13. SOT199; The seating plane is electrically isolated from all terminals.

Notes

1. Refer to mounting instructions for F-pack envelopes.

2. Epoxy meets UL94 V0 at 1/8".

July 1999

Rev 1.000

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU4506AF

DEFINITIONS

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and

operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 1999

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the

The information presented in this document does not form part of any quotation or contract, it is believed to be

accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under patent or other

industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these

products can be reasonably expected to result in personal injury. Philips customers using or selling these products

for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting

from such improper use or sale.

July 1999

Rev 1.000

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