BU4530AX [NXP]
Silicon Diffused Power Transistor; 硅扩散型功率晶体管
| 型号： | BU4530AX |
| 厂家： | 
NXP |
| 描述： | Silicon Diffused Power Transistor |
| 文件： | 总4页 (文件大小：24K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4530AX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full pack
envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features
exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
VCESM
VCEO
IC
Collector-emitter voltage peak value
VBE = 0 V
-
1500
800
16
V
V
Collector-emitter voltage (open base)
Collector current (DC)
-
-
A
ICM
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
-
40
A
Ptot
VCEsat
ICsat
Ths ≤ 25 ˚C
-
45
W
V
IC = 10 A; IB = 2.5 A
f = 32kHz
-
3.0
-
10
8.0
t.b.f
t.b.f
A
A
f = 90kHz
-
tf
Fall time
ICsat = 10.0 A; f = 32kHz
t.b.f
t.b.f
µs
µs
ICsat = 8.0 A; f = 90kHz
PINNING - SOT399
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
case
c
base
2
collector
emitter
b
3
case isolated
1
2 3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
VCESM
VCEO
IC
Collector-emitter voltage peak value
VBE = 0 V
-
1500
800
16
V
V
Collector-emitter voltage (open base)
Collector current (DC)
-
-
A
ICM
IB
Collector current peak value
Base current (DC)
-
40
A
-
10
A
IBM
Base current peak value
Reverse base current peak value 1
Total power dissipation
-
15
A
-IBM
Ptot
Tstg
Tj
-
-
10
A
Ths ≤ 25 ˚C
45
W
˚C
˚C
Storage temperature
Junction temperature
-55
-
150
150
1 Turn-off current.
January 1998
1
Rev 1.000
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4530AX
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Rth j-hs
Rth j-hs
Rth j-a
Junction to heatsink
Junction to heatsink
Junction to ambient
without heatsink compound
with heatsink compound
in free air
-
-
3.7
2.8
-
K/W
K/W
K/W
35
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Visol
Cisol
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree
-
-
2500
V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz
heatsink
-
22
-
pF
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICES
ICES
Collector cut-off current 2
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax
Tj = 125 ˚C
-
-
-
-
1.0
2.0
mA
mA
;
IEBO
BVEBO
VCEOsust
Emitter cut-off current
Emitter-base breakdown voltage
VEB = 7.5 V; IC = 0 A
IB = 1 mA
-
-
14
-
1.0
-
-
mA
V
V
7.5
800
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA;
L = 25 mH
VCEsat
VBEsat
hFE
Collector-emitter saturation voltage IC = 10 A; IB = 2.5 A
-
t.b.f
-
-
-
3.0
1.1
-
V
V
Base-emitter saturation voltage
DC current gain
IC = 10 A; IB = 2.5 A
IC = 1A; VCE = 5 V
IC = 10 A; VCE = 5 V
t.b.f
5.35
hFE
4.2
6.5
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Cc
Collector capacitance
IE = 0 A; VCB = 10 V; f = 1 MHz
ICsat = 10 A;IB1 = 2 A;(IB2 = -5 A)
145
-
pF
Switching times (32 kHz line
deflection circuit)
Turn-off storage time
Turn-off fall time
ts
tf
t.b.f
t.b.f
t.b.f
t.b.f
µs
µs
Switching times (90 kHz line
deflection circuit)
Turn-off storage time
Turn-off fall time
ICsat = 8 A;IB1 = 1.6 A;(IB2 = -4.8 A)
ts
tf
t.b.f
t.b.f
t.b.f
t.b.f
µs
µs
2 Measured with half sine-wave voltage (curve tracer).
January 1998
2
Rev 1.000
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4530AX
MECHANICAL DATA
Dimensions in mm
5.8 max
3.0
16.0 max
Net Mass: 5.88 g
0.7
4.5
3.3
10.0
27
max
25
25.1
25.7
22.5
max
5.1
2.2 max
4.5
18.1
min
1.1
0.4 M
2
3.3
0.95 max
5.45 5.45
Fig.1. SOT399; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
January 1998
3
Rev 1.000
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4530AX
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
January 1998
4
Rev 1.000
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