BUJD103AD,118 [NXP]
BUJD103AD;
| 型号： | BUJD103AD,118 |
| 厂家： | 
NXP |
| 描述： | BUJD103AD |
| 文件： | 总13页 (文件大小：182K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUJD103AD
NPN power transistor with integrated diode
Rev. 3 — 3 August 2010
Product data sheet
1. Product profile
1.1 General description
High voltage, high speed, planar passivated NPN power switching transistor with
integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic
package.
1.2 Features and benefits
Fast switching
Integrated anti-parallel E-C diode
High voltage capability
Very low switching and conduction
losses
1.3 Applications
DC-to-DC converters
Inverters
Electronic lighting ballasts
Motor control systems
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
IC
collector current see Figure 1; see Figure 2; DC;
see Figure 4
-
-
-
-
-
-
4
A
Ptot
total power
dissipation
see Figure 3; Tmb ≤ 25 °C
80
700
W
V
VCESM
collector-emitter VBE = 0 V
peak voltage
Static characteristics
hFE DC current gain
IC = 500 mA; VCE = 5 V;
see Figure 10; Tj = 25 °C
13
-
21
32
-
VCE = 5 V; IC = 3 A;
12.5
T
mb = 25 °C; see Figure 10
BUJD103AD
NXP Semiconductors
NPN power transistor with integrated diode
2. Pinning information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
B
C
E
base
collector[1]
mb
C
2
3
emitter
B
E
2
sym131
1
3
SOT428 (DPAK)
[1] it is not possible to make a connection to pin 2 of the SOT428 (DPAK) package
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BUJD103AD
DPAK
plastic single-ended surface-mounted package (DPAK); 3 leads SOT428
(one lead cropped)
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCESM
VCBO
VCEO
IC
Parameter
Conditions
VBE = 0 V
IE = 0 A
Min
Max
700
700
400
4
Unit
V
collector-emitter peak voltage
collector-base voltage
collector-emitter voltage
collector current
-
-
-
-
V
IB = 0 A
V
DC; see Figure 1; see Figure 2;
see Figure 4
A
ICM
IB
peak collector current
base current
see Figure 1; see Figure 2; see Figure 4
DC
-
8
A
-
2
A
IBM
Ptot
Tstg
Tj
peak base current
total power dissipation
storage temperature
junction temperature
-
4
A
Tmb ≤ 25 °C; see Figure 3
-
80
150
150
W
°C
°C
-65
-
BUJD103AD
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 3 August 2010
2 of 13
BUJD103AD
NXP Semiconductors
NPN power transistor with integrated diode
001aac000
10
I
C
(A)
8
6
4
2
0
V
C
CC
L
V
CL(CE)
probe point
L
B
I
Bon
DUT
V
BB
001aab999
0
200
400
600
800
CEclamp
1000
(V)
V
Fig 1. Reverse bias safe operating area
Fig 2. Test circuit for reverse bias safe operating area
001aab993
120
P
der
(%)
80
40
0
0
40
80
120
160
T
mb
(°C)
Fig 3. Normalized total power dissipation as a function of mounting base temperature
BUJD103AD
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 3 August 2010
3 of 13
BUJD103AD
NXP Semiconductors
NPN power transistor with integrated diode
001aac001
2
10
I
C
(A)
duty cycle = 0.01
10
I
CM(max)
II
(3)
t = 20 μs
p
I
C(max)
(1)
50 μs
100 μs
1
200 μs
500 μs
DC
(2)
−1
10
I
(3)
−2
10
III
(3)
−3
10
2
3
1
10
10
10
V
(V)
CEclamp
1) Ptot maximum and Ptot peak maximum lines
2) Second breakdown limits
3) I = Region of permissable DC operation
II = Extension for repetitive pulse operation
III = Extension during turn-on in single transistor converters
provided that RBE ≤ 100 Ω and tp ≤ 0.6 μs
Fig 4. Forward bias safe operating area for Tmb ≤ 25 °C
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance
from junction to
mounting base
see Figure 6
-
-
1.56
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
printed-circuit-board mounted; minimum
footprint; see Figure 5
-
75
-
K/W
BUJD103AD
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 3 August 2010
4 of 13
BUJD103AD
NXP Semiconductors
NPN power transistor with integrated diode
7.0
7.0
1.5
2.15
2.5
4.57
001aab021
Fig 5. Minimum footprint SOT428
001aab998
10
Z
th(j-mb)
(K/W)
δ = 0.5
1
0.2
0.1
t
p
0.05
0.02
P
δ =
tot
T
−1
10
10
0.01
t
t
p
T
−2
−5
−4
−3
−2
−1
10
10
10
10
10
1
10
t
p
(s)
Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width
BUJD103AD
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 3 August 2010
5 of 13
BUJD103AD
NXP Semiconductors
NPN power transistor with integrated diode
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
[1]
[1]
[1]
ICES
collector-emitter cut-off VBE = 0 V; VCE = 700 V; Tj = 125 °C
-
-
-
-
-
-
2
1
1
mA
mA
mA
current
VBE = 0 V; VCE = 700 V; Tj = 25 °C
ICBO
collector-base cut-off
current
VCB = 700 V; IE = 0 A
[1]
ICEO
collector-emitter cut-off VCE = 400 V; IB = 0 A
current
-
-
-
-
-
0.1
10
1
mA
mA
V
IEBO
emitter-base cut-off
current
VEB = 7 V; IC = 0 A
-
VCEsat
VBEsat
collector-emitter
saturation voltage
IC = 3 A; IB = 0.6 A; see Figure 7;
see Figure 8
0.29
0.99
base-emitter saturation IC = 3 A; IB = 0.6 A; see Figure 9
voltage
1.5
V
VF
forward voltage
DC current gain
IF = 2 A; Tj = 25 °C
-
1.04
15
1.5
32
V
hFE
IC = 1 mA; VCE = 5 V; Tmb = 25 °C;
see Figure 10
10
IC = 500 mA; VCE = 5 V; Tj = 25 °C;
see Figure 10
13
11
-
21
32
22
-
IC = 2 A; VCE = 5 V; Tmb = 25 °C;
see Figure 10
16
IC = 3 A; VCE = 5 V; Tmb = 25 °C;
see Figure 10
12.5
Dynamic characteristics
ton
turn-on time
IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A;
RL = 75 Ω; Tj 25 °C; resistive load;
see Figure 11; see Figure 12
-
-
-
-
-
-
-
0.52
2.7
1.2
-
0.6
µs
µs
µs
µs
µs
µs
µs
ts
storage time
IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A;
RL = 75 Ω; Tj = 25 °C; resistive load;
see Figure 11; see Figure 12
3.3
IC = 2 A; IBon = 0.4 A; VBB = -5 V;
LB = 1 µH; Tj = 25 °C; inductive load;
see Figure 13; see Figure 14
1.4
IC = 2 A; IBon = 0.4 A; VBB = -5 V;
LB = 1 µH; Tj = 100 °C; inductive load;
see Figure 13; see Figure 14
1.8
tf
fall time
IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A;
RL = 75 Ω; Tj = 25 °C; resistive load;
see Figure 11; see Figure 12
0.3
-
0.35
0.12
0.06
IC = 2 A; IBon = 0.4 A; VBB = -5 V;
LB = 1 µH; Tj = 100 °C; inductive load;
see Figure 13; see Figure 14
IC = 2 A; IBon = 0.4 A; VBB = -5 V;
LB = 1 µH; Tj 25 °C; inductive load;
see Figure 13; see Figure 14
0.03
[1] Measured with half-sine wave voltage (curve tracer)
BUJD103AD
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 3 August 2010
6 of 13
BUJD103AD
NXP Semiconductors
NPN power transistor with integrated diode
001aab995
001aab997
2.0
V
CEsat
(V)
V
CEsat
(V)
0.5
0.4
0.3
0.2
0.1
0
I
C
= 1 A
2 A 3 A
4 A
1.6
1.2
0.8
0.4
0
−2
−1
−1
10
10
1
10
10
1
10
I
(A)
I (A)
C
B
Fig 7. Collector-emitter saturation voltage as a
function of base current; typical values
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values
001aab996
001aab994
2
1.4
10
V
BEsat
(V)
T = 25 °C
j
1.2
h
FE
1.0
0.8
0.6
0.4
0.2
0
V
= 5 V
1 V
CE
10
1
10
−1
−2
−1
10
1
10
10
1
10
I
C
(A)
I (A)
C
Fig 9. Base-emitter saturation voltage as a function of
collector current; typical values
Fig 10. DC current gain as a function of collector
current; typical values
BUJD103AD
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 3 August 2010
7 of 13
BUJD103AD
NXP Semiconductors
NPN power transistor with integrated diode
I
C
I
Con
90 %
90 %
V
CC
R
L
10 %
V
t
IM
0
R
B
t
DUT
t
f
t
s
I
B
p
t
on
t
off
I
T
001aab989
Bon
10 %
t
t ≤ 30 ns
r
−I
Boff
001aab990
Fig 11. Test circuit for resistive load switching
Fig 12. Switching times waveforms for resistive load
I
C
I
Con
90 %
V
C
CC
L
10 %
L
B
I
V
t
Bon
t
DUT
f
BB
t
s
t
off
I
B
001aab991
I
Bon
t
−I
Boff
001aab992
Fig 13. Test circuit for inductive load switching
Fig 14. Switching times waveforms for inductive load
BUJD103AD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 3 August 2010
8 of 13
BUJD103AD
NXP Semiconductors
NPN power transistor with integrated diode
7. Package outline
Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped)
SOT428
y
E
A
A
A
1
b
2
E
1
mounting
base
D
2
D
1
H
D
2
L
L
2
L
1
1
3
b
1
b
M
c
w
A
e
e
1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
y
max
D
min
E
min
L
1
min
2
1
UNIT
A
A
1
b
b
b
c
D
E
e
e
1
H
D
L
L
2
w
1
2
1
2.38
2.22
0.93
0.46
0.89
0.71
1.1
0.9
5.46
5.00
0.56
0.20
6.22
5.98
6.73
6.47
10.4
9.6
2.95
2.55
0.9
0.5
4.0
4.45
0.5
mm
2.285 4.57
0.2
0.2
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
06-02-14
06-03-16
SOT428
SC-63
TO-252
Fig 15. Package outline SOT428 (DPAK)
BUJD103AD
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 3 August 2010
9 of 13
BUJD103AD
NXP Semiconductors
NPN power transistor with integrated diode
8. Revision history
Table 7.
Revision history
Document ID
BUJD103AD v.3
Modifications:
BUJD103AD v.2
Release date
Data sheet status
Change notice
Supersedes
20100803
Product data sheet
-
BUJD103AD v.2
• Various changes to content.
20091006 Product data sheet
-
BUJD103AD v.1
BUJD103AD
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 3 August 2010
10 of 13
BUJD103AD
NXP Semiconductors
NPN power transistor with integrated diode
9. Legal information
9.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
Suitability for use — NXP Semiconductors products are not designed,
9.2 Definitions
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
9.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
BUJD103AD
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 3 August 2010
11 of 13
BUJD103AD
NXP Semiconductors
NPN power transistor with integrated diode
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
non-automotive qualified products in automotive equipment or applications.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BUJD103AD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 3 August 2010
12 of 13
BUJD103AD
NXP Semiconductors
NPN power transistor with integrated diode
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .10
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
9.1
9.2
9.3
9.4
10
Contact information. . . . . . . . . . . . . . . . . . . . . .12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 3 August 2010
Document identifier: BUJD103AD
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