BUK210-50Y [NXP]

PowerMOS transistor TOPFET high side switch; 功率MOS晶体管TOPFET高边开关


型号：	BUK210-50Y
厂家：	NXP
描述：	PowerMOS transistor TOPFET high side switch 功率MOS晶体管TOPFET高边开关晶体开关晶体管
文件：	总13页 (文件大小：198K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Philips Semiconductors

Product specification

PowerMOS transistor

TOPFET high side switch

BUK210-50Y

DESCRIPTION

QUICK REFERENCE DATA

Monolithic single channel high side

protected power switch in

TOPFET2 technology assembled in

a 5 pin plastic package.

SYMBOL

PARAMETER

MIN.

UNIT

I_L

Nominal load current (ISO)

APPLICATIONS

SYMBOL

PARAMETER

MAX.

UNIT

General controller for driving

lamps, motors, solenoids, heaters.

V_BG

I_L

Continuous off-state supply voltage

Continuous load current

150

˚C

mΩ

T_j

Continuous junction temperature

R_ON

On-state resistance

T_j= 25˚C

FEATURES

FUNCTIONAL BLOCK DIAGRAM

Vertical power TrenchMOS

Low on-state resistance

CMOS logic compatible

Very low quiescent current

Overtemperature protection

Load current limiting

BATT

STATUS

POWER

Latched overload and

short circuit protection

Overvoltage and undervoltage

shutdown with hysteresis

On-state open circuit load

detection

Diagnostic status indication

Voltage clamping for turn off

of inductive loads

MOSFET

INPUT

CONTROL &

PROTECTION

CIRCUITS

ESD protection on all pins

Reverse battery, overvoltage

and transient protection

LOAD

GROUND

Fig.1. Elements of the TOPFET HSS with internal ground resistor.

PINNING - SOT263B-01

PIN CONFIGURATION

SYMBOL

DESCRIPTION

Input

Flag

TOPFET

Drain

Protection supply

Source

1 2 3 4 5

Front view

MBL267

Fig. 2.

Fig. 3.

tab Drain

November 2002

Rev 2.000

Philips Semiconductors

Product specification

PowerMOS transistor

TOPFET high side switch

BUK210-50Y

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_BG

Continuous supply voltage

I_L

Continuous load current

Total power dissipation

Storage temperature

T_mb≤95˚C

T_mb≤25˚C

P_D

T_stg

T_j

˚C

-55

175

150

Continuous junction temperature¹

T_sold

Lead temperature

during soldering

260

˚C

Reverse battery voltages²

Continuous reverse voltage

Peak reverse voltage

-V_BG

Application information

R_I, R_S

External resistors³

to limit input, status currents

3.2

kΩ

Input and status

I_I, I_S

Continuous currents

-5

Repetitive peak currents

Inductive load clamping

Non-repetitive clamping energy

δ ≤ 0.1, tp = 300 µs

-50

I_L= 10 A, V_BG= 16 V

T_j= 150˚C prior to turn-off

E_BL

150

ESD LIMITING VALUE

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_C

Electrostatic discharge capacitor

voltage

Human body model;

C = 250 pF; R = 1.5 kΩ

THERMAL CHARACTERISTICS

SYMBOL PARAMETER

Thermal resistance⁴

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-mb}

R_{th j-a}

Junction to mounting base

Junction to ambient

1.52

1.86

K/W

in free air

1 For normal continuous operation. A higher T_jis allowed as an overload condition but at the threshold T_j(TO)the over temperature trip operates

to protect the switch.

2 Reverse battery voltage is allowed only with external resistors to limit the input and status currents to a safe value. The connected load must

limit the reverse load current. The internal ground resistor limits the reverse battery ground current. Power is dissipated and the T_j

rating must be observed.

3 To limit currents during reverse battery and transient overvoltages (positive or negative).

4 Of the output power MOS transistor.

November 2002

Rev 2.000

Philips Semiconductors

Product specification

PowerMOS transistor

TOPFET high side switch

BUK210-50Y

STATIC CHARACTERISTICS

Limits are at -40˚C ≤ T_mb≤ 150˚C and typicals at T_mb= 25 ˚C unless otherwise stated.

SYMBOL PARAMETER

Clamping voltages

Battery to ground

CONDITIONS

MIN. TYP. MAX. UNIT

V_BG

V_BL

I_G= 1 mA

Battery to load

I_L= I_G= 1 mA

I_L= 10 mA

-V_LG

Negative load to ground

Negative load voltage¹

I_L= 10 A; t_p= 300 µs

Supply voltage

battery to ground

V_BG

Operating range²

5.5

Currents

Quiescent current³

9 V ≤ V_BG≤ 16 V

V_LG= 0 V

I_B

I_L

0.1

µA

T_mb= 25˚C

T_mb= 85˚C

Off-state load current⁴

V_BL= V_BG

0.1

I_G

I_L

Operating current⁵

Nominal load current⁶

I_L= 0 A

V_BL= 0.5 V

Resistances

V_BG

I_L

t_p⁷

T_mb

R_ON

On-state resistance

9 to 35 V 10 A 300 µs

25˚C

150˚C

25˚C

mΩ

On-state resistance

6 V

10 A 300 µs

150˚C

R_G

Internal ground resistance

I_G= 10 mA

150

190

Ω

1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load.

2 On-state resistance is increased if the supply voltage is less than 9 V.

3 This is the continuous current drawn from the supply when the input is low and includes leakage current to the load.

4 The measured current is in the load pin only.

5 This is the continuous current drawn from the supply with no load connected, but with the input high.

6 Defined as in ISO 10483-1. For comparison purposes only. This parameter will not be characterised for automotive PPAP.

7 The supply and input voltage for the R_ONtests are continuous. The specified pulse duration t_prefers only to the applied load current.

November 2002

Rev 2.000

Philips Semiconductors

Product specification

PowerMOS transistor

TOPFET high side switch

BUK210-50Y

INPUT CHARACTERISTICS

9 V ≤ V_BG≤ 16 V. Limits are at -40˚C ≤ T_mb≤ 150˚C and typicals at T_mb= 25 ˚C unless otherwise stated.

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

I_I

Input current

V_IG= 5 V

5.5

160

µA

V_IG

Input clamping voltage

Input turn-on threshold voltage

Input turn-off threshold voltage

Input turn-on hysteresis

Input turn-on current

I_I= 200 µA

8.5

V_IG(ON)

V_IG(OFF)

∆V_IG

I_I(ON)

I_I(OFF)

2.4

2.1

0.3

1.5

100

V_IG= 3 V

µA

Input turn-off current

V_IG= 1.5 V

STATUS CHARACTERISTICS

The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high.

Limits are at -40˚C ≤ T_mb≤ 150˚C and typicals at T_mb= 25 ˚C unless otherwise stated. Refer to TRUTH TABLE.

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V_SG

Status clamping voltage

I_S= 100 µA

5.5

8.5

Status low voltage

T_mb= 25˚C

0.7

0.8

I_S

Status leakage current

V_SG= 5 V

0.1

µA

Status saturation current¹

Application information

R_S

External pull-up resistor

kΩ

OPEN CIRCUIT DETECTION CHARACTERISTICS

An open circuit load can be detected in the on-state. Refer to TRUTH TABLE.

Limits are at -40˚C ≤ T_mb≤ 150˚C and typical is at T_mb= 25 ˚C.

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

Open circuit detection

9 V ≤ V_BG≤ 35 V

I_L(TO)

Low current detect threshold

Hysteresis

0.24

0.4

1.6

1.2

T_j= 25˚C

0.8

∆I_L(TO)

0.16

1 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting. This condition should be avoided in order to

prevent possible interference with normal operation of the device.

November 2002

Rev 2.000

Philips Semiconductors

Product specification

PowerMOS transistor

TOPFET high side switch

BUK210-50Y

UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS

Limits are at -40˚C ≤ T_mb≤ 150˚C and typicals at T_mb= 25 ˚C. Refer to TRUTH TABLE.

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

Undervoltage

V_BG(UV)

Low supply threshold voltage¹

4.2

0.5

5.5

∆V_BG(UV)

Hysteresis

Overvoltage

V_BG(OV)

High supply threshold voltage²

Hysteresis

∆V_BG(OV)

TRUTH TABLE

ABNORMAL CONDITIONS

DETECTED

LOAD

OUTPUT

INPUT

SUPPLY

LOAD

STATUS

DESCRIPTION

OFF

off

on & normal

on & low current detect

supply undervoltage lockout

supply overvoltage shutdown

SC tripped

OFF

OT shutdown³

KEY TO ABBREVIATIONS

logic low

UV undervoltage

OV overvoltage

logic high

don’t care

condition not present

condition present

LC low current or open circuit load

SC short circuit

OT overtemperature

1 Undervoltage sensor causes the device to switch off and reset.

2 Overvoltage sensor causes the device to switch off to protect its load.

3 The status will continue to indicate OT (even if the input goes low) until the device cools below the reset threshold. Refer to OVERLOAD

PROTECTION CHARACTERISTICS.

November 2002

Rev 2.000

Philips Semiconductors

Product specification

PowerMOS transistor

TOPFET high side switch

BUK210-50Y

OVERLOAD PROTECTION CHARACTERISTICS

5.5 V ≤ V_BG≤ 35 V, limits are at -40˚C ≤ T_mb≤ 150˚C and typicals at T_mb= 25 ˚C unless otherwise stated.

Refer to TRUTH TABLE.

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

Overload protection

V_BL= V_BG

I_L(lim)

Load current limiting

V_BG≥ 9 V

Short circuit load protection

V_BL(TO)

t_{d sc}

Battery load threshold voltage¹

V_BG= 16 V

V_BG= 35 V

Response time²

V_BL> V_BL(TO)

180

250

µs

Overtemperature protection

T_j(TO)

Threshold junction

temperature³

150

170

190

˚C

∆T_j(TO)

Hysteresis

SWITCHING CHARACTERISTICS

T_mb= 25 ˚C, V_BG= 13 V, for resistive load R_L= 13 Ω.

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

During turn-on

from input going high

to 10% V_L

t_{d on}

Delay time

µs

V/µs

dV/dt_on

Rate of rise of load voltage

30% to 70% V_L

0.35

t _on

Total switching time

to 90% V_L

140

200

µs

During turn-off

from input going low

to 90% V_L

t_{d off}

Delay time

0.6

µs

V/µs

µs

dV/dt_off

t _off

Rate of fall of load voltage

Total switching time

70% to 30% V_L

to 10% V_L

120

CAPACITANCES

T_mb= 25 ˚C; f = 1 MHz; V_IG= 0 V. designed in parameters.

SYMBOL PARAMETER

CONDITIONS

V_BG= 13 V

V_BL= 13 V

V_SG= 5 V

MIN. TYP. MAX. UNIT

C_ig

C_bl

C_sg

Input capacitance

Output capacitance

Status capacitance

250

350

1 The battery to load threshold voltage for short circuit protection is proportional to the battery supply voltage. After short circuit protection has

operated, the input voltage must be toggled low for the switch to resume normal operation.

2 Measured from when the input goes high.

3 After cooling below the reset temperature the switch will resume normal operation.

November 2002

Rev 2.000

Philips Semiconductors

Product specification

PowerMOS transistor

TOPFET high side switch

BUK210-50Y

_BG(ON)/ mA

BUK210-50Y

CLAMPING

VBL

UNDERVOLTAGE

SHUTDOWN

OVERVOLTAGE

SHUTDOWN

TOPFET

HSS

VBG

OPERATING V_IG= 5 V

VLG

VSG

VIG

QUIESCENT V_IG= 0 V

_BG/ V

Fig.4. High side switch measurements schematic.

(current and voltage conventions)

Fig.7. Typical supply characteristics, 25 ˚C.

I_G= f(V_BG); parameter V_IG

R_ON/ mOhm

BUK210-50Y

_ON/ mOhm

BUK210-50Y

R_ONmax

typ

V_BG= 6 V

9 V =< V_BG=< 35 V

V_BG/ V

100

-50

T_j

100

150

200

^OC

Fig.5. Typical on-state resistance, t_p= 300 µs.

Fig.8. Typical on-state resistance,T_j= 25 ˚C.

R_ON= f(V_BG); condition I_L= 10 A; t_p= 300 µs

R_ON= f(T_j); parameter V_BG; condition I_L= 10 A

I_L/ A

BUK210-50Y

I_G/ mA

BUK210-50Y

3.0

2.5

2.0

1.5

1.0

0.5

l_L= 0 A

V_BG/ V

> = 8

9 V <= V_BG<= 35 V

lL > IL(TO)

l_L> I_L(TO)

typ.

V_BG= 50 V

-50

100

150

200

T_j/ ^O

V_BL/ V

Fig.6. Typical on-state characteristics, T_j= 25 ˚C.

Fig.9. Typical operating supply current.

I_G= f(T_j); parameters I_L, V_BG; condition V_IG= 5 V

I_L= f(T_j); parameter V_BG; t_p= 250 µs

November 2002

Rev 2.000

Philips Semiconductors

Product specification

PowerMOS transistor

TOPFET high side switch

BUK210-50Y

max.

_B/ A

I_L(OC)/ A

BUK210-50Y

100E-6

10E-6

1E-6

1.6

1.2

0.8

0.4

0.0

typ.

100E-9

10E-9

1E-9

max.

typ.

min.

100E-12

-50

100

150

200

-50

100

150

200

T_j/ ^O

Fig.10. Typical supply quiescent current.

I_B= f(T_j); condition V_BG= 16 V, V_IG= 0 V, V_LG= 0 V

Fig.13. Low load current detection threshold.

I_L(OC)= f(T_j); conditions V_IG= 5 V; V_BG≥ 9 V

BUK210-50Y

I_L/ A

BUK210-50Y

max.

_BG(UV)/ V

100E-6

10E-6

1E-6

5.5

4.5

3.5

2.5

typ.

100E-9

10E-9

1E-9

off

00E-12

10E-12

-50

100

150

200

-50

100

150

200

T_j/ ^O

Fig.11. Typical off-state leakage current.

I_L= f(T_j); conditions V_BL= 16 V = V_BG, V_IG= 0 V.

Fig.14. Supply undervoltage thresholds.

V_BG(UV)= f(T_j); conditions V_IG= 5 V; V_BL≤ 2 V

V_BG(OV)/ V

BUK210-50Y

I_S/ A

BUK210-50Y

max.

100E-6

10E-6

1E-6

max.

typ.

100E-9

10E-9

1E-9

off

min.

-50

100

150

200

-50

100

150

200

T_j/ ^O

Fig.12. Status leakage current.

I_S= f(T_j); conditions V_SG= 5 V, V_IG= V_BG= 0 V

Fig.15. Supply overvoltage thresholds.

V_BG(OV)= f(T_j); conditions V_IG= 5 V; I_L= 100 mA

November 2002

Rev 2.000

Philips Semiconductors

Product specification

PowerMOS transistor

TOPFET high side switch

BUK210-50Y

V_SG(LOW)/ V

I_S/ mA

BUK210-50Y

0.5

-50

100

150

200

T_j/ ^O

V_SG/ V

Fig.16. Typical status low characteristic.

V_SG= f(T_j); conditions V_BG≥ 9 V, I_S= 100 µA

Fig.19. Typical status low characteristic, T_j= 25 ˚C.

I_S= f(V_SG); conditions V_IG= 5V, V_BG= 13V,I_L= 0A

V_SG/ V

BUK210-50Y

V_IG/ V

BUK210-50Y

7.50

7.40

7.30

7.20

7.10

7.00

6.90

6.80

6.70

6.60

6.50

3.00

2.50

2.00

1.50

1.00

V_IG/ V =

V_IG(ON)

V_IG(OFF)

-50

100

150

200

T_j/ ^O

-50

100

150

200

T_j/ ^O

Fig.17. Typical threshold voltage characteristic.

Fig.20. Typical status clamping voltage.

V_SG= f(T_j); condition I_S= 100µA, V_BG= 13V

V_IG= f(T_j); condition 9V ≤ V_BG≤ 16V

BUK210-50Y

I_S/ mA

V_IG/ V

BUK210-50Y

7.50

7.40

7.30

7.20

7.10

7.00

6.90

6.80

6.70

6.60

6.50

T_j/ ^O

-50

100

150

200

V_SG/ V

Fig.18. Typical input clamping voltage.

V_IG= f(T_j); condition I_I= 200µA, V_BG= 13V

Fig.21. Typical status characteristic, T_j= 25 ˚C.

I_S= f(V_SG); conditions V_IG= V_BG= 0V

November 2002

Rev 2.000

Philips Semiconductors

Product specification

PowerMOS transistor

TOPFET high side switch

BUK210-50Y

V_LG/ V

V_BG/ V

BUK210-50Y

200 mA

-10

-15

-20

-25

-30

I_G

1 mA

I_L

10 mA

10 A

-50

100

150

200

-50

100

150

200

T_j/ ^O

Fig.22. Typical battery to ground clamping voltage.

V_BG= f(T_j); parameter I_G

Fig.25. Typical negative load clamping voltage.

V_LG= f(T_j); parameter I_L; condition V_IG= = 0V

V_BL/ V

I_L/ A

BUK210-50Y

-5

-10

-15

-20

-25

-30

-35

-40

-45

-50

I_L

600 mA

1 mA

-1.1 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0

V_BL/ V

-50

100

150

200

T_j/ ^O

Fig.23. Typical battery to load clamping voltage.

V_BL= f(T_j); parameter I_L; condition I_G= 10mA

Fig.26. Typical reverse diode characteristic.

I_L= f(V_BL); conditions V_IG= 0 V, T_j= 25 ˚C

I_L/ A

BUK210-50Y

current limiting

V_BL(TO)typ.

Short circuit trip = 150us

-30

-25

-20

-15

-10

V_LG/ V

V_BL/ V

Fig.24. Typical negative load clamping.

I_L= f(V_LG); conditions V_IG= = 0V, T_j= 25˚C

Fig.27. Typical overload characteristic, T_mb= 25 ˚C.

I_L= f(V_BL); condition V_BG= 16 V; parameter t_p

November 2002

Rev 2.000

Philips Semiconductors

Product specification

PowerMOS transistor

TOPFET high side switch

BUK210-50Y

I_L(lim)/ A

BUK210-50Y

/ V

BUK215-50Y

max.

BL(TO)

typ. 25˚C

min.

T_j/ ^O

-50

100

150

200

/ V

Fig.28. Short circuit load threshold voltage.

V_BL(TO)= f(V_BG); conditions -40˚C ≤ T_mb≤ 150˚C

Fig.31. Typical overload current, V_BL= 8V.

I_L= f(T_j); parameter V_BG= 13V;t_p= 300 µs

C_BL

BUK210-50Y

V_BL(TO)/ V

BUK210-50Y

10 nF

12.0

11.8

11.6

11.4

11.2

11.0

10.8

10.6

10.4

10.2

10.0

1nF

100pF

-50

100

150

200

T_j/ ^O

V_BL/ V

Fig.29. Typical output capacitance. T_mb= 25 ˚C

C_bl= f(V_BL); conditions f = 1 MHz, V_IG= 0 V

Fig.32. Typical short circuit load threshold voltage.

V_BL(TO)= f(T_j); condition V_BG= 16 V

BUK210-50Y

Zth j-mb ( K / W )

I_G/ mA

BUK210-50Y

1e+01

1e+00

1e-01

1e-02

1e-03

-50

D =

0.5

0.2

0.1

0.05

-100

-150

-200

0.02

t_p

D =

-20

-15

-10

V_BG/ V

-5

1e-07

1e-05

1e-03

t / s

1e-01

1e+02

Fig.30. Typical reverse battery characteristic.

I_G= f(V_BG); conditions I_L= 0 A, T_j= 25 ˚C

Fig.33. Transient thermal impedance.

Z_{th j-mb}= f(t); parameter D = t_p/T

November 2002

Rev 2.000

Philips Semiconductors

Product specification

PowerMOS transistor

TOPFET high side switch

BUK210-50Y

MECHANICAL DATA

Plastic single-ended package; heatsink mounted; 1 mounting hole;

SOT263B-01

5-lead TO-220 lead form option

∅ p

mounting

base

10 mm

scale

DIMENSIONS (mm are the original dimensions)

(2)

(1)

UNIT

∅ p

max.

4.5 1.39 0.85 0.7 15.8 6.4 10.3

4.1 1.27 0.70 0.4 15.2 5.9 9.7

9.8 5.9 5.2 2.4

9.7 5.3 5.0 1.6

0.8 3.8 4.3 3.0

0.6 3.6 4.1 2.7

1.7

0.5

2.0 4.5 8.2 0.5 0.4

Notes

1. Terminal dimensions are uncontrolled in this zone.

2. Positional accuracy of the terminals is controlled in this zone.

REFERENCES

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

JEDEC

EIAJ

5-lead (option)

TO-220

01-01-11

SOT263B-01

Fig.34. SOT263B package¹leadform 263B-01, pin 3 connected to mounting base.

1 Refer to mounting instructions for TO220 envelopes. Epoxy meets UL94 VO at 1/8". Net mass: 2 g

November 2002

Rev 2.000

Philips Semiconductors

Product specification

PowerMOS transistor

TOPFET high side switch

BUK210-50Y

DEFINITIONS

DATA SHEET STATUS

DATA SHEET

STATUS¹

PRODUCT

STATUS²

DEFINITIONS

Objective data

Development

This data sheet contains data from the objective specification for

product development. Philips Semiconductors reserves the right to

change the specification in any manner without notice

Preliminary data

Qualification

This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the specification without

notice, in order to improve the design and supply the best possible

product

Product data

Production

This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in

order to improve the design, manufacturing and supply. Changes will

be communicated according to the Customer Product/Process

Change Notification (CPCN) procedure SNW-SQ-650A

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and

operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 2002

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the

The information presented in this document does not form part of any quotation or contract, it is believed to be

accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under patent or other

industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these

products can be reasonably expected to result in personal injury. Philips customers using or selling these products

for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting

from such improper use or sale.

1 Please consult the most recently issued datasheet before initiating or completing a design.

2 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is

available on the Internet at URL http://www.semiconductors.philips.com.

November 2002

Rev 2.000

BUK210-50Y [NXP]

相关型号：

SI9130DB

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