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BUK474-200B [NXP]

PowerMOS transistor Isolated version of BUK454-200A/B; BUK454-200A / B的功率MOS晶体管隔离版本
BUK474-200B
型号： BUK474-200B
厂家： NXP    NXP
描述：

PowerMOS transistor Isolated version of BUK454-200A/B
BUK454-200A / B的功率MOS晶体管隔离版本

晶体 晶体管
文件： 总7页 (文件大小：83K)
中文：  中文翻译
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Philips Semiconductors  
Product specification  
PowerMOS transistor  
Isolated version of BUK454-200A/B  
BUK474-200A/B  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
N-channel enhancement mode  
field-effect power transistor in a  
plastic full-pack envelope. The  
deviceisintended foruseinSwitched  
Mode Power Supplies (SMPS),  
motor control, welding, DC/DC and  
AC/DC converters, and in general  
purpose switching applications.  
SYMBOL  
PARAMETER  
MAX.  
MAX.  
UNIT  
BUK474  
-200A  
200  
5.3  
25  
0.4  
-200B  
200  
4.7  
25  
0.5  
VDS  
ID  
Drain-source voltage  
Drain current (DC)  
Total power dissipation  
Drain-source on-state  
resistance  
V
A
W
Ω
Ptot  
RDS(ON)  
PINNING - SOT186A  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
d
case  
gate  
2
drain  
g
3
source  
case isolated  
1
2 3  
s
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDS  
VDGR  
±VGS  
Drain-source voltage  
-
-
-
-
200  
200  
30  
V
V
V
Drain-gate voltage  
RGS = 20 kΩ  
Gate-source voltage  
-
-200A  
5.3  
-200B  
ID  
Drain current (DC)  
Ths = 25 ˚C  
Ths = 100 ˚C  
Ths = 25 ˚C  
-
-
-
4.7  
3.0  
19  
A
A
A
ID  
Drain current (DC)  
3.3  
IDM  
Drain current (pulse peak value)  
21  
Ptot  
Tstg  
Tj  
Total power dissipation  
Storage temperature  
Junction temperature  
Ths = 25 ˚C  
-
-
-
- 55  
-
25  
150  
150  
W
˚C  
˚C  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-hs  
Rth j-a  
Thermal resistance junction to with heatsink compound  
-
-
-
5
-
K/W  
K/W  
heatsink  
Thermal resistance junction to  
ambient  
55  
April 1998  
1
Rev 1.100  
Philips Semiconductors  
Product specification  
PowerMOS transistor  
BUK474-200A/B  
STATIC CHARACTERISTICS  
Ths = 25 ˚C unless otherwise specified  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
V(BR)DSS  
Drain-source breakdown  
voltage  
VGS = 0 V; ID = 0.25 mA  
200  
-
-
V
VGS(TO)  
Gate threshold voltage  
VDS = VGS; ID = 1 mA  
2.1  
3.0  
1
0.1  
10  
0.35  
0.4  
4.0  
10  
1.0  
100  
0.4  
0.5  
V
µA  
mA  
nA  
Ω
IDSS  
Zero gate voltage drain current VDS = 200 V; VGS = 0 V; Tj = 25 ˚C  
Zero gate voltage drain current VDS = 200 V; VGS = 0 V; Tj =125 ˚C  
Gate source leakage current  
Drain-source on-state  
resistance  
-
-
-
-
-
IDSS  
IGSS  
VGS = ±30 V; VDS = 0 V  
RDS(ON)  
VGS = 10 V;  
ID = 3.5 A  
BUK474-200A  
BUK474-200B  
Ω
DYNAMIC CHARACTERISTICS  
Ths = 25 ˚C unless otherwise specified  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
gfs  
Forward transconductance  
VDS = 25 V; ID = 3.5 A  
3.5  
5.0  
-
S
Ciss  
Coss  
Crss  
Input capacitance  
Output capacitance  
Feedback capacitance  
VGS = 0 V; VDS = 25 V; f = 1 MHz  
-
-
-
700  
100  
50  
850  
160  
80  
pF  
pF  
pF  
td on  
tr  
td off  
tf  
Turn-on delay time  
Turn-on rise time  
Turn-off delay time  
Turn-off fall time  
VDD = 30 V; ID = 2.9 A;  
VGS = 10 V; RGS = 50 Ω;  
Rgen = 50 Ω  
-
-
-
-
12  
45  
80  
40  
20  
70  
120  
60  
ns  
ns  
ns  
ns  
Ld  
Internal drain inductance  
Measured from drain lead 6 mm  
from package to centre of die  
Measured from source lead 6 mm  
from package to source bond pad  
-
4.5  
-
nH  
Ls  
Internal source inductance  
-
7.5  
-
nH  
ISOLATION LIMITING VALUE & CHARACTERISTIC  
Ths = 25 ˚C unless otherwise specified  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Visol  
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal  
-
2500  
V
three terminals to external  
heatsink  
waveform;  
R.H. ≤ 65% ; clean and dustfree  
Cisol  
Capacitance from T2 to external f = 1 MHz  
heatsink  
-
10  
-
pF  
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS  
Ths = 25 ˚C unless otherwise specified  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
IDR  
Continuous reverse drain  
-
-
-
5.3  
A
current  
IDRM  
VSD  
Pulsed reverse drain current  
Diode forward voltage  
-
-
-
-
21  
1.3  
A
V
IF = 5.3 A ; VGS = 0 V  
1.1  
trr  
Qrr  
Reverse recovery time  
Reverse recovery charge  
IF = 5.3 A; -dIF/dt = 100 A/µs;  
VGS = 0 V; VR = 30 V  
-
-
150  
0.9  
-
-
ns  
µC  
April 1998  
2
Rev 1.100  
Philips Semiconductors  
Product specification  
PowerMOS transistor  
BUK474-200A/B  
AVALANCHE LIMITING VALUE  
Ths = 25 ˚C unless otherwise specified  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
WDSS  
Drain-source non-repetitive  
unclamped inductive turn-off  
energy  
ID = 9 A ; VDD ≤ 100 V ;  
VGS = 10 V ; RGS = 50 Ω  
-
-
50  
mJ  
Normalised Power Derating  
with heatsink compound  
ID / A  
PD%  
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
100  
10  
1
A
B
tp = 10 us  
RDS(ON) = VDS/ID  
100 us  
1 ms  
DC  
10 ms  
100 ms  
0.1  
0
20  
40  
60  
80  
Ths /  
100  
120  
140  
1
10  
100  
VDS / V  
1000  
10000  
C
Fig.1. Normalised power dissipation.  
PD% = 100 PD/PD 25 ˚C = f(Ths)  
Fig.3. Safe operating area. Ths = 25 ˚C  
ID & IDM = f(VDS); IDM single pulse; parameter tp  
Normalised Current Derating  
ID%  
Zth / (K/W)  
10  
1
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
with heatsink compound  
D =  
0.5  
0.2  
0.1  
0.05  
0.02  
0.1  
0.01  
t
T
p
tp  
P
D =  
D
t
0
T
0
20  
40  
60  
80  
Ths /  
100  
120  
140  
1E-07  
1E-05  
1E-03  
t / s  
1E-01  
1E+01  
C
Fig.2. Normalised continuous drain current.  
ID% = 100 ID/ID 25 ˚C = f(Ths); conditions: VGS ≥ 10 V  
Fig.4. Transient thermal impedance.  
Zth j-hs = f(t); parameter D = tp/T  
April 1998  
3
Rev 1.100  
Philips Semiconductors  
Product specification  
PowerMOS transistor  
BUK474-200A/B  
ID / A  
20  
gfs / S  
8
6
5
4
3
2
1
0
10  
VGS / V =  
20  
15  
10  
5
7
6
5
4
0
0
2
4
6
8
10 12 14 16 18 20  
VDS / V  
0
2
4
6
8
10 12 14 16 18 20  
ID / A  
Fig.5. Typical output characteristics, Tj = 25 ˚C.  
ID = f(VDS); parameter VGS  
Fig.8. Typical transconductance, Tj = 25 ˚C.  
gfs = f(ID); conditions: VDS = 25 V  
Normalised RDS(ON) = f(Tj)  
a
RDS(ON) / Ohm  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
1.5  
1.0  
0.5  
0
VGS / V =  
7.5  
5.5  
5
6
6.5  
4.5  
7
8
10  
20  
-60 -40 -20  
0
20 40 60 80 100 120 140  
0
2
4
6
8
10 12 14 16 18 20  
ID / A  
Tj /  
C
Fig.6. Typical on-state resistance, Tj = 25 ˚C.  
RDS(ON) = f(ID); parameter VGS  
Fig.9. Normalised drain-source on-state resistance.  
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 3.5 A; VGS = 10 V  
VGS(TO) / V  
ID / A  
150  
20  
15  
10  
5
max.  
4
Tj / C =  
25  
typ.  
3
min.  
2
1
0
0
-60 -40 -20  
0
20  
40  
60  
80 100 120 140  
0
2
4
6
8
10  
Tj /  
C
VGS / V  
Fig.7. Typical transfer characteristics.  
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj  
Fig.10. Gate threshold voltage.  
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS  
April 1998  
4
Rev 1.100  
Philips Semiconductors  
Product specification  
PowerMOS transistor  
BUK474-200A/B  
SUB-THRESHOLD CONDUCTION  
ID / A  
IF / A  
1E-01  
1E-02  
1E-03  
1E-04  
1E-05  
1E-06  
20  
15  
10  
5
2 %  
typ  
98 %  
Tj / C = 150  
25  
0
0
1
2
3
4
0
1
2
VGS / V  
VSDS / V  
Fig.11. Sub-threshold drain current.  
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS  
Fig.14. Typical reverse diode current.  
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj  
WDSS%  
120  
C / pF  
10000  
1000  
100  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
Ciss  
Coss  
Crss  
10  
20  
40  
60  
80  
Ths /  
100  
C
120  
140  
0
20  
40  
VDS / V  
Fig.12. Typical capacitances, Ciss, Coss, Crss.  
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz  
Fig.15. Normalised avalanche energy rating.  
WDSS% = f(Ths); conditions: ID = 9 A  
VGS / V  
VDS / V =40  
160  
12  
10  
8
VDD  
+
L
VDS  
-
VGS  
6
-ID/100  
T.U.T.  
0
4
R 01  
2
RGS  
shunt  
0
0
4
8
12  
16  
20  
24  
28  
QG / nC  
Fig.16. Avalanche energy test circuit.  
WDSS = 0.5 LID2 BVDSS/(BVDSS − VDD  
Fig.13. Typical turn-on gate-charge characteristics.  
VGS = f(QG); conditions: ID = 9 A; parameter VDS  
)
April 1998  
5
Rev 1.100  
Philips Semiconductors  
Product specification  
PowerMOS transistor  
BUK474-200A/B  
MECHANICAL DATA  
Dimensions in mm  
Net Mass: 2 g  
10.3  
max  
4.6  
max  
3.2  
3.0  
2.9 max  
2.8  
Recesses (2x)  
6.4  
2.5  
0.8 max. depth  
15.8  
max  
seating  
plane  
15.8  
max.  
19  
max.  
3 max.  
not tinned  
3
2.5  
13.5  
min.  
1
2
3
M
0.4  
1.0 (2x)  
0.6  
2.5  
0.9  
0.7  
2.54  
0.5  
5.08  
1.3  
Fig.17. SOT186A; The seating plane is electrically isolated from all terminals.  
Notes  
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent  
damage to MOS gate oxide.  
2. Refer to mounting instructions for F-pack envelopes.  
3. Epoxy meets UL94 V0 at 1/8".  
April 1998  
6
Rev 1.100  
Philips Semiconductors  
Product specification  
PowerMOS transistor  
BUK474-200A/B  
DEFINITIONS  
Data sheet status  
Objective specification  
This data sheet contains target or goal specifications for product development.  
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.  
Product specification  
This data sheet contains final product specifications.  
Limiting values  
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one  
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and  
operation of the device at these or at any other conditions above those given in the Characteristics sections of  
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
Philips Electronics N.V. 1998  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the  
copyright owner.  
The information presented in this document does not form part of any quotation or contract, it is believed to be  
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any  
consequence of its use. Publication thereof does not convey nor imply any license under patent or other  
industrial or intellectual property rights.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices or systems where malfunction of these  
products can be reasonably expected to result in personal injury. Philips customers using or selling these products  
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting  
from such improper use or sale.  
April 1998  
7
Rev 1.100  

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