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BUK6607-55C [NXP]

100A, 55V, 0.0102ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3;
BUK6607-55C
型号： BUK6607-55C
厂家： NXP    NXP
描述：

100A, 55V, 0.0102ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3

开关 脉冲 晶体管
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Leading-edge Automotive Power  
MOSFETs  
Next Generation MOSFETs for a wide range  
of Automotive Applications  
Low on-resistance MOSFETS for a wide  
range of automotive applications  
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistors (FETs) in industry-standard packages using  
advanced TrenchMOS technology. This wide range of devices has been designed and qualified to the appropriate AEC Q101  
standard for use in high performance automotive applications.  
Features and benefits  
Applications  
AEC Q101 compliant  
12 V Automotive systems  
Low conduction losses due to very low on-state resistance  
Suitable for logic and standard level gate drive sources  
Suitable for thermally demanding environments due  
to 175 °C rating  
Start-Stop micro-hybrid applications  
Electric and electro-hydraulic power steering  
Motors, lamps and solenoids  
Transmission control  
ID(max) up to 90A  
ID(max) up to 120A  
ID(max) up to 120A  
ID(max) up to 120A  
ID(max) up to 180A  
2
Applications  
Each automotive application is different so specific MOSFET requirements will vary. The notes below give general guidelines and  
device suggestions. NXP would be pleased to advise on specific application cases.  
Electric Power Steering  
Application  
Circuit topology  
Load  
Key MOSFET features  
Suggested types  
Electric Power Steering  
3
bridge  
3
BrushLess DC motor  
30 or 40 V, Low Rdson, high surge  
current capability  
BUK761R9-30C, BUK762R0-40C,  
BUK661R8-30C, BUK661R6-30C  
3
ISG/ISA  
Application  
Circuit topology  
Load  
Key MOSFET features  
Suggested types  
Integrated Starter  
Generator  
3
bridge  
3
BrushLess Machine  
High Current Capability, low thermal  
resistance, good switching characteristics  
BUK761R9-30C, BUK661R8-30C,  
BUK661R6-30C  
DC DC Converter bypass for Stop-Start  
Application  
Circuit topology  
Load  
Key MOSFET features  
Suggested types  
DCDC Converters  
Various converter topologies  
Inductor / transformer  
Good switching performance, high volt  
capability (for step up converters)  
BUK6215-75C, BUK6211-75C  
4
High Efficiency Alternator  
Application  
Circuit topology  
Load  
Key MOSFET features  
Suggested types  
High efficiency alternator  
3
bridge  
Vehicle supply network  
High current capability, low thermal  
BUK661R6-30C, BUK661R8-30C  
resistance, good switching characteristics  
Glow Plug Drive  
Application  
Circuit topology  
Load  
Key MOSFET features  
Suggested types  
Diesel engine starting aid  
High side switch  
Low side resistive heaters  
Low RDSon small size  
BUK625R0-40C, BUK6207-55C  
5
Reverse Battery Protection  
Application  
Circuit topology  
Load  
Key MOSFET features  
Suggested types  
Reverse Polarity Protection  
LS reversed MOSFET  
System to be protected  
Vds > Vbatt (30 V is usually enough).  
BUK724R2-30C, BUK663R5-30C  
R
DSon as appropriate for system load.  
Load Switch / Freewheel / Reverse Polarity Protection  
Application  
Circuit topology  
Load  
Key MOSFET features  
Suggested types  
Fan control  
High-side drive and active freewheel  
path  
Low-side brushed DC  
Motor  
Small size, low RDSon Low Rthj-mb  
High side MOSFET BUK625R0-  
40C Reverse Protection MOSFET  
BUK663R5-30C  
6
Product Range  
30 V N-channel Automotive TrenchMOS  
TO-220  
(SOT78A)  
I2PAK  
(SOT226)  
D2PAK-7  
(SOT427)  
D2PAK  
(SOT404)  
DPAK  
(SOT428)  
RDSon  
[max]  
@ 10 V  
[mΩ]  
RDSon  
[max]  
@ 5 V  
[mΩ]  
ID  
[max]  
@ 25 °C  
[A]  
Rth(j-mb)  
[max]  
[K/W]  
15.5 x 10.0 x 4.3  
11.0 x 10.0 x 4.3  
11.0 x 10.0 x 4.3  
11.0 x 10.0 x 4.3  
6.0 x 6.6 x 2.3  
1
180  
180  
120  
120  
120  
120  
120  
100  
100  
100  
100  
90  
BUK6C1R0-30C  
BUK6C1R2-30C  
1.2  
1.6  
1.8  
1.9  
2.2  
2.4  
2.8  
3.3  
3.5  
3.8  
4.5  
4.5  
5.2  
9.8  
14  
2.5  
0.49  
0.45  
0.57  
0.45  
0.59  
0.74  
0.74  
0.95  
0.95  
0.95  
0.95  
1.17  
1.87  
2.52  
BUK661R6-30C  
BUK761R8-30C  
BUK661R8-30C  
2.8  
3
BUK652R0-30C  
BUK652R1-30C  
BUK6E2R0-30C  
3
3.9  
4.4  
5.1  
5.6  
6
BUK662R5-30C  
BUK663R5-30C  
BUK652R7-30C  
BUK653R7-30C  
BUK624R5-30C  
BUK724R5-30C  
BUK6207-30C  
BUK6209-30C  
BUK6213-30C  
75  
7.5  
15  
22  
81  
46  
33  
40 V N-channel Automotive TrenchMOS  
TO-220  
(SOT78A)  
I2PAK  
(SOT226)  
D2PAK-7  
(SOT427)  
D2PAK  
(SOT404)  
DPAK  
(SOT428)  
RDSon  
[max]  
@ 10 V  
[mΩ]  
RDSon  
[max]  
@ 5 V  
[mΩ]  
ID  
[max]  
@ 25 °C  
[A]  
Rth(j-mb)  
[max]  
[K/W]  
15.5 x 10.0 x 4.3  
11.0 x 10.0 x 4.3  
11.0 x 10.0 x 4.3  
11.0 x 10.0 x 4.3  
6.0 x 6.6 x 2.3  
1.3  
1.5  
1.9  
2
180  
180  
120  
100  
120  
120  
120  
120  
100  
100  
100  
100  
80  
BUK6C1R3-40C  
BUK6C1R5-40C  
2.6  
3.1  
0.45  
0.45  
0.45  
0.45  
0.59  
0.59  
0.74  
0.74  
0.74  
0.74  
0.95  
0.95  
0.95  
0.95  
1.17  
1.87  
2.52  
BUK661R9-40C  
BUK762R0-40C  
2.3  
2.3  
2.3  
2.7  
3.2  
3.6  
3.6  
4
BUK652R3-40C  
BUK6E2R3-40C  
BUK752R3-40C  
BUK7E2R3-40C  
3.2  
3.6  
4.8  
5.3  
BUK662R4-40C  
BUK663R2-40C  
BUK763R6-40C  
BUK664R6-40C  
BUK652R6-40C  
BUK653R4-40C  
BUK754R0-40C  
BUK654R8-40C  
BUK6E3R4-40C  
4.6  
4.8  
5
6.1  
6.5  
6.9  
88  
87  
BUK625R0-40C  
BUK725R0-40C  
BUK6208-40C  
BUK6212-40C  
BUK6218-40C  
5
75  
6.2  
12  
18  
8.8  
16.3  
23  
70  
41  
42  
Types in bold red represent new products  
Types in bold red italic underline represent products in development  
7
55 V N-channel Automotive TrenchMOS  
TO-220  
(SOT78A)  
I2PAK  
(SOT226)  
D2PAK-7  
(SOT427)  
D2PAK  
(SOT404)  
DPAK  
(SOT428)  
RDSon  
[max]  
@ 10 V  
[mΩ]  
RDSon  
[max]  
@ 5 V  
[mΩ]  
ID  
[max]  
@ 25 °C  
[A]  
Rth(j-mb)  
[max]  
[K/W]  
15.5 x 10.0 x 4.3  
11.0 x 10.0 x 4.3  
BUK6E3R2-55C  
11.0 x 10.0 x 4.3  
11.0 x 10.0 x 4.3  
BUK662R7-55C  
6.0 x 6.6 x 2.3  
1.8  
2.1  
2.7  
3.2  
3.9  
4.9  
5.4  
6.5  
7
180  
180  
120  
120  
120  
97  
BUK6C1R8-55C  
BUK6C2R1-55C  
3.8  
4.2  
4.9  
6.6  
7
0.45  
0.45  
0.59  
0.74  
0.74  
0.95  
0.95  
0.95  
1.17  
1.87  
2.52  
BUK653R2-55C  
BUK653R5-55C  
BUK663R5-55C  
BUK664R4-55C  
92.6  
72  
BUK654R6-55C  
BUK6507-55C  
8.7  
9
BUK6607-55C  
72  
7.8  
9.6  
19  
10  
90  
BUK6207-55C  
BUK6210-55C  
BUK6217-55C  
BUK6228-55C  
13.2  
24.5  
38  
55  
31  
29  
22  
75 V N-channel Automotive TrenchMOS  
TO-220AB  
(SOT78A)  
I2PAK  
(SOT226)  
D2PAK-7  
(SOT427)  
D2PAK  
(SOT404)  
DPAK  
(SOT428)  
RDSon  
[max]  
@ 10 V  
[mΩ]  
RDSon  
[max]  
@ 5 V  
[mΩ]  
ID  
[max]  
@ 25 °C  
[A]  
Rth(j-mb)  
[max]  
[K/W]  
15.5 x 10.0 x 4.3  
11.0 x 10.0 x 4.3  
11.0 x 10.0 x 4.3  
11.0 x 10.0 x 4.3  
6.0 x 6.6 x 2.3  
2.8  
3.3  
4
180  
180  
120  
100  
120  
100  
120  
98  
BUK6C2R8-75C  
BUK6C3R3-75C  
5.3  
5.3  
0.45  
0.45  
0.45  
0.45  
0.59  
0.59  
0.74  
0.95  
0.95  
1.17  
1.87  
2.52  
BUK663R7-75C  
4
BUK764R0-75C  
4.2  
4.3  
5
BUK654R0-75C  
BUK6E4R0-75C  
BUK754R3-75C  
BUK7E4R3-75C  
6.3  
6.5  
9.1  
12.4  
13.2  
18  
BUK664R8-75C  
5.3  
7.6  
10.4  
11  
15  
29  
46  
BUK655R0-75C  
BUK6507-75C  
BUK6510-75C  
72  
BUK6607-75C  
BUK6610-75C  
54  
52  
BUK6211-75C  
BUK6215-75C  
BUK6226-75C  
BUK6240-75C  
57  
35  
23  
56  
16  
Types in bold red represent new products  
Types in bold red italic underline represent products in development  
www.nxp.com/automotivemosfets  
8
Automotive TrenchMOS part numbering  
B
U
K
6
6
1
R
8
-
3
0
C
Gate  
threshold  
voltage  
level  
MOSFET  
voltage  
BVDSS  
MOSFET  
Package  
type  
MOSFET on-  
Trench  
-
-
-
-
-
-
-
-
Brand name  
resistance RDSon  
Generation  
6 =  
Intermediate  
Level  
2 = DPAK  
SOT428  
Blank =  
Generation 1  
1R8 = 1.8mΩ  
12 = 12mΩ  
30 = 30 V  
40 = 40 V  
7 =  
Standard  
Level  
5 = TO220  
SOT78  
A=  
Generation 2  
9 = Logic  
Level  
6 = D2PAK  
SOT404  
B =  
Generation 3  
150 = 150mΩ  
55 = 55 V  
NXP  
Automotive  
MOSFET  
C =  
Generation 4  
8 = SOT223  
75 = 75 V  
C = 7 Pin D2PAK  
SOT427  
100 = 100 V  
150 = 150 V  
E = I2PAK  
SOT226  
Y =LFPAK  
SOT669  
9
Notes  
10  
Notes  
11  
www.nxp.com  
© 2010 NXP Semiconductors N.V.  
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the  
copyright owner. The information presented in this document does not form part of any quotation or contract,  
is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by  
the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under  
patent- or other industrial or intellectual property rights.  
Date of release: September 2010  
Document order number: 9397 750 16982  
Printed in the Netherlands  

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