BUK7535-55A [NXP]
TrenchMOS standard level FET; 的TrenchMOS标准水平FET
| 型号： | BUK7535-55A |
| 厂家： | 
NXP |
| 描述： | TrenchMOS standard level FET |
| 文件： | 总15页 (文件大小：294K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUK7535-55A; BUK7635-55A
TrenchMOS™ standard level FET
Rev. 01 — 10 November 2000
Product specification
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance.
Product availability:
BUK7535-55A in SOT78 (TO-220AB)
BUK7635-55A in SOT404 (D 2-PAK).
2. Features
■ TrenchMOS™ technology
■ Q101 compliant
■ 175 °C rated
■ Standard level compatible.
3. Applications
■ Automotive and general purpose power switching:
◆ 12 V and 24 V loads
c
c
◆ Motors, lamps and solenoids.
4. Pinning information
Table 1: Pinning - SOT78, SOT404, simplified outline and symbol
Pin
1
Description
gate (g)
Simplified outline
Symbol
mb
mb
2
drain (d)
d
s
3
source (s)
mb
mounting base;
connected to drain (d)
g
MBB076
2
1
3
MBK116
MBK106
1
2 3
SOT78 (TO-220AB)
SOT404 (D2-PAK)
BUK7535-55A; BUK7635-55A
Philips Semiconductors
TrenchMOS™ standard level FET
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
Conditions
Typ
−
Max
55
Unit
V
VDS
ID
drain-source voltage (DC)
drain current (DC)
Tmb = 25 °C; VGS = 10 V
Tmb = 25 °C
−
35
A
Ptot
Tj
total power dissipation
junction temperature
−
85
W
−
175
°C
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 20 A
Tj = 25 °C
30
35
70
mΩ
mΩ
Tj = 175 °C
−
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
−
Max
55
Unit
V
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
RGS = 20 kΩ
−
55
V
−
±20
35
V
Tmb = 25 °C; VGS = 10 V;
−
A
Figure 2 and 3
T
mb = 100 °C; VGS = 10 V; Figure 2
−
−
25
A
A
IDM
peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs;
139
Figure 3
Ptot
Tstg
Tj
total power dissipation
storage temperature
Tmb = 25 °C; Figure 1
−
85
W
−55
−55
+175
+175
°C
°C
operating junction temperature
Source-drain diode
IDR
reverse drain current (DC)
pulsed reverse drain current
Tmb = 25 °C
−
−
35
A
A
IDRM
Tmb = 25 °C; pulsed; tp ≤ 10 µs
139
Avalanche ruggedness
WDSS
non-repetitive avalanche energy
unclamped inductive load; ID = 14 A;
−
49
mJ
VDS ≤ 55 V; VGS = 10 V; RGS = 50 Ω;
starting Tmb = 25 °C
9397 750 07646
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 10 November 2000
2 of 15
BUK7535-55A; BUK7635-55A
Philips Semiconductors
TrenchMOS™ standard level FET
03aa24
120
03na19
I
120
der
(%)
100
P
(%)
der
100
80
60
40
20
0
80
60
40
20
0
0
25
50
75 100 125 150 175 200
o
0
25
50
75 100 125 150 175 200
o
T
( C)
mb
T
( C)
mb
V
GS ≥ 4.5 V
Ptot
Pder
=
× 100%
----------------------
P
ID
°
tot(25 C)
Ider
=
× 100%
------------------
I
°
D(25 C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
03nb84
3
10
I
D
(A)
R
= V / I
DS
DSon
D
2
10
t
= 10 us
p
100 us
t
p
P
δ =
10
T
1 ms
D.C.
10 ms
t
t
p
T
100 ms
1
2
10
1
10
V
(V)
DS
Tmb = 25 °C; IDM single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 07646
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 10 November 2000
3 of 15
BUK7535-55A; BUK7635-55A
Philips Semiconductors
TrenchMOS™ standard level FET
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol
Parameter
Conditions
Value
60
Unit
K/W
K/W
Rth(j-a)
thermal resistance from junction to ambient
vertical in still air; SOT78 package
mounted on printed circuit board;
minimum footprint; SOT404
package
50
Rth(j-mb)
thermal resistance from junction to mounting Figure 4
base
1.7
K/W
7.1 Transient thermal impedance
03nb85
10
Z
th(j-mb)
(K/W)
1
δ = 0.5
t
p
P
-1
δ =
10
T
t
t
p
T
-2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
t
(s)
p
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 07646
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 10 November 2000
4 of 15
BUK7535-55A; BUK7635-55A
Philips Semiconductors
TrenchMOS™ standard level FET
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol
Static characteristics
V(BR)DSS drain-source breakdown
voltage
Parameter
Conditions
Min
Typ
Max
Unit
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
55
50
−
−
−
−
V
V
Tj = −55 °C
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS = VGS
Figure 9
Tj = 25 °C
;
2
1
−
3
−
−
4
V
V
V
Tj = 175 °C
Tj = −55 °C
−
4.4
IDSS
drain-source leakage current VDS = 55 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
−
−
−
0.05
−
10
µA
µA
nA
500
100
IGSS
gate-source leakage current VGS = ±20 V; VDS = 0 V
2
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 20 A;
Figure 7 and 8
Tj = 25 °C
−
−
30
35
70
mΩ
mΩ
Tj = 175 °C
−
Dynamic characteristics
Ciss
Coss
Crss
td(on)
tr
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
−
−
−
−
−
−
−
−
650
170
110
10
872
205
153
−
pF
pF
pF
ns
ns
ns
ns
nH
VDD = 30 V; RL = 1.2 Ω;
VGS = 10 V; RG = 10 Ω;
62
−
td(off)
tf
turn-off delay time
fall time
24
−
20
−
Ld
internal drain inductance
from drain lead 6 mm from
package to centre of die
4.5
−
from contact screw on
mounting base to centre of
die SOT78
−
−
−
3.5
2.5
7.5
−
−
−
nH
nH
nH
from upper edge of drain
mounting base to centre of
die SOT404
Ls
internal source inductance
from source lead to source
bond pad
9397 750 07646
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 10 November 2000
5 of 15
BUK7535-55A; BUK7635-55A
Philips Semiconductors
TrenchMOS™ standard level FET
Table 5: Characteristics…continued
Tj = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Source-drain diode
VSD
source-drain (diode forward) IS = 25 A; VGS = 0 V;
−
0.85
1.2
V
voltage
Figure 15
trr
reverse recovery time
recovered charge
IS = 20 A; dIS/dt = −100 A/µs
VGS = −10 V; VDS = 30 V
−
−
40
80
−
−
ns
Qr
nC
03nb81
20
03nb80
120
50
DSon
(mΩ)
V
(V) = 12 14 16 18
R
I
GS
D
(A)
100
80
60
40
20
0
45
40
35
30
25
20
11
10.5
9.5
8.5
7.5
6.5
5.5
4.5
0
2
4
6
8
10
(V)
DS
5
10
15
20
V
V
(V)
GS
Tj = 25 °C; tp = 300 µs
Tj = 25 °C; ID = 17 A
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
03aa28
2.2
03nb82
80
DSon
(mΩ)
a
R
2
V
(V) =
9
10
GS
5.5
6
6.5
7
8
1.8
1.6
1.4
1.2
1
70
60
50
40
30
20
0.8
0.6
0.4
0.2
0
-60
-20
20
60
100
140
180
0
20
40
60
80
100
o
T ( C)
I
(A)
D
j
Tj = 25 °C
RDSon
a =
---------------------------
RDSon(25 C)
°
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 07646
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 10 November 2000
6 of 15
BUK7535-55A; BUK7635-55A
Philips Semiconductors
TrenchMOS™ standard level FET
03aa32
03aa35
5
-1
10
4.5
I
D
V
GS(th)
(A)
-2
4
10
(V)
max.
3.5
3
-3
10
typ.
min
2.5
2
min
typ
max
-4
-5
-6
10
10
10
1.5
1
0.5
0
-60
-20
20
60
100
140
o
180
0
1
2
3
4
5
T ( C)
V
(V)
j
GS
ID = 1 mA; VDS = VGS
Tj = 25 °C; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03nb78
03nb83
16
2500
g
fs
(S)
14
C (pF)
2000
12
10
8
1500
1000
6
Ciss
4
500
2
Coss
Crss
0
0.01
0
0.1
1
10
100
0
10
20
30
40
50
V
(V)
I
(A)
DS
D
Tj = 25 °C; VDS = 25 V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 07646
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 10 November 2000
7 of 15
BUK7535-55A; BUK7635-55A
Philips Semiconductors
TrenchMOS™ standard level FET
03nb77
03nb79
10
GS
50
V
(V)
I
D
(A)
9
8
7
6
5
4
3
2
1
0
V
= 14 V
DD
V
= 44 V
DD
40
30
20
10
T = 175 O
j
C
T = 25 OC
j
0
0
10
20
30
0
2
4
6
8
10
(V)
Q
(nC)
V
G
GS
VDS = 25 V
Tj = 25 °C; ID = 17 A
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
03nb76
120
I
S
(A)
100
80
60
T = 175 O
C
j
40
20
0
T = 25 O
j
C
0.0
0.5
1.0
1.5
2.0
V
(V)
SD
VGS = 0 V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
9397 750 07646
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 10 November 2000
8 of 15
BUK7535-55A; BUK7635-55A
Philips Semiconductors
TrenchMOS™ standard level FET
9. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
P
A
A
1
q
mounting
base
D
1
D
(1)
L
L
1
2
Q
b
1
L
1
2
3
b
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
b
(1)
L
e
2
A
b
D
E
L
D
1
L
1
A
c
UNIT
P
q
Q
1
1
max.
4.5
4.1
1.39
1.27
0.9
0.7
1.3
1.0
0.7
0.4
15.8
15.2
6.4
5.9
10.3
9.7
15.0
13.5
3.30
2.79
3.8
3.6
3.0
2.7
2.6
2.2
mm
3.0
2.54
Note
1. Terminals in this zone are not tinned.
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SC-46
99-09-13
00-09-07
SOT78
3-lead TO-220AB
Fig 16. SOT78 (TO-220AB).
9397 750 07646
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 10 November 2000
9 of 15
BUK7535-55A; BUK7635-55A
Philips Semiconductors
TrenchMOS™ standard level FET
2
Plastic single-ended surface mounted package (Philips version of D -PAK); 3 leads
(one lead cropped)
SOT404
A
A
E
1
mounting
base
D
1
D
H
D
2
L
p
1
3
c
b
e
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
D
E
A
A
b
UNIT
c
D
e
L
H
Q
1
1
p
D
max.
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
1.60
1.20
10.30
9.70
2.90 15.40 2.60
2.10 14.80 2.20
mm
11
2.54
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
98-12-14
99-06-25
SOT404
Fig 17. SOT404 (D2-PAK).
9397 750 07646
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 10 November 2000
10 of 15
BUK7535-55A; BUK7635-55A
Philips Semiconductors
TrenchMOS™ standard level FET
10. Soldering
10.85
10.60
10.50
1.50
7.50
7.40
1.70
2.15
1.50
2.25
8.275
8.35
8.15
4.60
0.30
4.85
5.40
7.95
8.075
3.00
0.20
1.20
1.30
1.55
solder lands
solder resist
occupied area
solder paste
5.08
MSD057
Dimensions in mm.
Fig 18. Reflow soldering footprint for SOT404.
9397 750 07646
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 10 November 2000
11 of 15
BUK7535-55A; BUK7635-55A
Philips Semiconductors
TrenchMOS™ standard level FET
11. Revision history
Table 6: Revision history
Rev Date
CPCN
-
Description
Product specification; initial version
01 20001110
9397 750 07646
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 10 November 2000
12 of 15
BUK7535-55A; BUK7635-55A
Philips Semiconductors
TrenchMOS™ standard level FET
12. Data sheet status
[1]
Datasheet status
Product status Definition
Development
Objective specification
This data sheet contains the design target or goal specifications for product development. Specification may
change in any manner without notice.
Preliminary specification Qualification
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any
time without notice in order to improve design and supply the best possible product.
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
13. Definitions
14. Disclaimers
Short-form specification — The data in
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
a
short-form specification is
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
9397 750 07646
© Philips Electronics N.V. 2000 All rights reserved.
Product specification
Rev. 01 — 10 November 2000
13 of 15
BUK7535-55A; BUK7635-55A
Philips Semiconductors
TrenchMOS™ standard level FET
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Internet: http://www.semiconductors.philips.com
Building BE, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. +31 40 272 4825
(SCA70)
9397 750 07646
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 10 November 2000
14 of 15
BUK7535-55A; BUK7635-55A
Philips Semiconductors
TrenchMOS™ standard level FET
Contents
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
3
4
5
6
7
7.1
8
9
10
11
12
13
14
© Philips Electronics N.V. 2000.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 10 November 2000
Document order number: 9397 750 07646
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