BUK753R4-30B [NXP]
TRANSISTOR 198 A, 30 V, 0.0034 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC PACKAGE-3, FET General Purpose Power;
| 型号： | BUK753R4-30B |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 198 A, 30 V, 0.0034 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC PACKAGE-3, FET General Purpose Power 局域网 开关 脉冲 晶体管 |
| 文件： | 总14页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUK753R4-30B; BUK763R4-30B
N-channel TrenchMOS standard level FET
Rev. 01 — 5 January 2006
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS technology.
1.2 Features
■ TrenchMOS technology
■ Q101 compliant
■ 175 °C rated
■ Standard level compatible
1.3 Applications
■ Automotive systems
■ 12 V loads
■ Motors, lamps and solenoids
■ General purpose power switching
1.4 Quick reference data
■ EDS(AL)S ≤ 1.3 J
■ ID ≤ 75 A
■ RDSon = 2.9 mΩ (typ)
■ Ptot ≤ 255 W
2. Pinning information
Table 1:
Pinning
Pin
1
Description
Simplified outline
Symbol
gate (G)
D
S
mb
mb
2
drain (D)
3
source (S)
G
mb
mounting base; connected to drain (D)
mbb076
2
1
3
SOT404 (D2PAK)
1
2 3
SOT78 (TO-220AB)
BUK753R4-30B; BUK763R4-30B
Philips Semiconductors
N-channel TrenchMOS standard level FET
3. Ordering information
Table 2:
Ordering information
Type number
Package
Name
Description
Version
BUK753R4-30B
BUK763R4-30B
TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
SOT78
D2PAK
plastic single-ended surface mounted package (D2PAK); 3 leads (one lead SOT404
cropped)
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
30
Unit
V
VDS
VDGR
VGS
ID
drain-source voltage
-
drain-gate voltage (DC)
gate-source voltage
drain current
RGS = 20 kΩ
-
30
V
-
±20
198
75
V
[1] [2]
[3]
Tmb = 25 °C; VGS = 10 V;
Figure 2 and Figure 3
-
A
-
A
[3]
Tmb = 100 °C; VGS = 10 V; Figure 2
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
Tmb = 25 °C; Figure 1
-
75
A
IDM
Ptot
Tstg
Tj
peak drain current
-
794
255
+175
+175
A
total power dissipation
storage temperature
junction temperature
-
W
°C
°C
−55
−55
Source-drain diode
[1] [2]
[3]
IDR
reverse drain current
Tmb = 25 °C
-
-
-
198
75
A
A
A
IDRM
peak reverse drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs
unclamped inductive load; ID = 75 A;
794
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
-
-
1.3
J
-
V
DS ≤ 30 V; RGS = 50 Ω; VGS = 10 V;
starting at Tj = 25 °C
[4]
EDS(AL)R repetitive drain-source avalanche
energy
[1] Current is limited by power dissipation chip rating.
[2] Refer to document 9397 750 12572 for further information.
[3] Continuous current is limited by package.
[4] Max value not quoted. Repetitive rating defined in Figure 16.
Single-shot avalanche rating limited by Tj(max) of 175 °C.
Repetitive avalanche rating limited by an average Tj of 170 °C.
Refer to application note AN10273 for further information.
BUK75_763R4-30B_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 5 January 2006
2 of 14
BUK753R4-30B; BUK763R4-30B
Philips Semiconductors
N-channel TrenchMOS standard level FET
03na19
003aab196
120
250
ID
(A)
P
der
(%)
200
150
100
50
80
(1)
40
0
0
0
50
100
150
200
0
50
100
150
200
Tj (°C)
T
(°C)
mb
V
GS ≥ 5 V
Ptot
Pder
=
× 100 %
-----------------------
(1) Capped at 75 A due to package.
P
°
tot(25 C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
Fig 2. Continuous drain current as a function of
mounting base temperature
003aab185
104
ID
(A)
103
limit R DSon = VDS/ ID
tp = 10 µs
102
100 µs
(1)
1 ms
DC
10 ms
10
1
100 ms
10-1
1
10
102
VDS (V)
Tmb = 25 °C; IDM is single pulse
(1) Capped at 75 A due to package.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK75_763R4-30B_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 5 January 2006
3 of 14
BUK753R4-30B; BUK763R4-30B
Philips Semiconductors
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 4:
Thermal characteristics
Symbol Parameter
Conditions
Min Typ Max Unit
Rth(j-mb) thermal resistance from junction to mounting base
-
-
0.59 K/W
Rth(j-a)
thermal resistance from junction to ambient
SOT78 (TO-220AB)
vertical in free air
-
-
60
50
-
-
K/W
K/W
SOT404 (D2PAK)
mounted on a printed-circuit
board; minimum footprint;
vertical in still air
5.1 Transient thermal impedance
003aab186
1
Zth(j-mb)
(K/W)
δ = 0.5
0.2
10-1
10-2
10-3
0.1
0.05
0.02
tp
P
δ =
T
single shot
t
tp
T
10-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK75_763R4-30B_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 5 January 2006
4 of 14
BUK753R4-30B; BUK763R4-30B
Philips Semiconductors
N-channel TrenchMOS standard level FET
6. Characteristics
Table 5:
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 250 µA; VGS = 0 V
Tj = 25 °C
30
27
-
-
-
-
V
V
Tj = −55 °C
VGS(th)
gate-source threshold voltage
drain leakage current
ID = 1 mA; VDS = VGS;
Figure 9 and Figure 10
Tj = 25 °C
2
1
-
3
-
4
V
V
V
Tj = 175 °C
-
Tj = −55 °C
-
4.4
IDSS
VDS = 30 V; VGS = 0 V
Tj = 25 °C
-
-
-
0.05 10
µA
µA
nA
Tj = 175 °C
-
500
IGSS
gate leakage current
VGS = ±20 V; VDS = 0 V
2
100
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 25 A;
Figure 6 and Figure 8
Tj = 25 °C
-
-
2.9
-
3.4
6.5
mΩ
mΩ
Tj = 175 °C
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
td(on)
tr
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
ID = 25 A; VDD = 24 V; VGS = 10 V;
Figure 14
-
-
-
-
-
-
-
-
-
-
-
75
19
23
-
-
-
nC
nC
nC
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Figure 12
3713 4951 pF
1249 1499 pF
460
32
630
pF
ns
ns
ns
ns
nH
VDS = 30 V; RL = 1.2 Ω;
-
-
-
-
-
VGS = 10 V; RG = 10 Ω
64
td(off)
tf
turn-off delay time
fall time
89
71
LD
internal drain inductance
from drain lead 6 mm from package to
center of die
4.5
from contact screw on mounting base to
center of die
-
-
-
3.5
2.5
7.5
-
-
-
nH
nH
nH
from upper edge of drain mounting base
to center of die SOT404
LS
internal source inductance
from source lead to source bond pad
Source-drain diode
VSD
trr
source-drain voltage
IS = 25 A; VGS = 0 V; Figure 15
-
-
-
0.85 1.2
V
reverse recovery time
recovered charge
IS = 20 A; dIS/dt = −100 A/µs;
70
58
-
-
ns
nC
VGS = 0 V; VR = 30 V
Qr
BUK75_763R4-30B_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 5 January 2006
5 of 14
BUK753R4-30B; BUK763R4-30B
Philips Semiconductors
N-channel TrenchMOS standard level FET
003aab188
003aab187
12
RDSon
400
ID
label is VGS (V)
(mΩ)
10
10
(A)
8
7
20
300
200
100
0
6.5
8
6
4
2
0
6
5.5
5
4.5
4
3.5
0
2
4
6
8
10
4
8
12
16
20
VDS (V)
VGS (V)
Tj = 25 °C
Tj = 25 °C; ID = 25 A
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values
03aa27
003aab189
2
20
RDSon
label is V (V)
GS
a
(mΩ)
6.5
5.5
5
6
16
12
8
1.5
1
0.5
0
8
10
20
4
0
0
100
200
300
400
-60
0
60
120
180
I
D (A)
T ( C)
°
j
Tj = 25 °C
RDSon
a =
-----------------------------
RDSon(25 C )
°
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK75_763R4-30B_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 5 January 2006
6 of 14
BUK753R4-30B; BUK763R4-30B
Philips Semiconductors
N-channel TrenchMOS standard level FET
03aa32
03aa35
−1
−2
−3
−4
−5
−6
5
10
V
I
GS(th)
(V)
D
(A)
min
typ
max
4
3
2
1
0
10
10
10
10
10
max
typ
min
−60
0
60
120
180
0
2
4
6
T (°C)
V
(V)
j
GS
ID = 1 mA; VDS = VGS
Tj = 25 °C; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
003aab190
003aab191
80
8000
C
gfs
(pF)
(S)
60
40
20
0
6000
Ciss
4000
Coss
2000
Crss
0
0
25
50
75
100
10-2
10-1
1
10
102
VDS (V)
ID (A)
Tj = 25 °C; VDS = 25 V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK75_763R4-30B_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 5 January 2006
7 of 14
BUK753R4-30B; BUK763R4-30B
Philips Semiconductors
N-channel TrenchMOS standard level FET
003aab192
003aab193
120
ID
10
VGS
(V)
(A)
100
8
6
4
2
0
80
60
40
VDD = 14 V
VDD = 24 V
Tj = 175 °C
20
Tj = 25 °C
0
0
2
4
6
0
20
40
60
80
VGS (V)
QG (nC)
VDS = 25 V
Tj = 25 °C; ID = 25 A
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 14. Gate-source voltage as a function of gate
charge; typical values
003aab194
003aab195
102
100
IS
(1)
(A)
80
60
40
IAL
(A)
(2)
10
(3)
Tj = 175 °C
20
Tj = 25 °C
1
0
0.0
10-3
10-2
10-1
1
10
0.5
1.0
1.5
tAL (ms)
VSD (V)
VGS = 0 V
See Table note 4 of Table 3 “Limiting values”
(1) Single-shot Tj = 25 °C
(2) Single-shot Tj = 150 °C
(3) Repetitive
Fig 15. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
Fig 16. Single-shot and repetitive avalanche rating;
avalanche current as a function of avalanche
time
BUK75_763R4-30B_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 5 January 2006
8 of 14
BUK753R4-30B; BUK763R4-30B
Philips Semiconductors
N-channel TrenchMOS standard level FET
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
p
A
A
1
q
mounting
base
D
1
D
L
L
2
1
Q
b
1
L
1
2
3
b
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
b
L
max.
2
e
A
b
D
E
L
D
L
1
A
c
UNIT
p
q
Q
1
1
1
4.7
4.1
1.40
1.25
0.9
0.6
1.45
1.00
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
15.0
12.8
3.30
2.79
3.8
3.5
3.0
2.7
2.6
2.2
mm
3.0
2.54
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
05-03-22
05-10-25
SOT78
3-lead TO-220AB
SC-46
Fig 17. Package outline SOT78 (TO-220AB)
BUK75_763R4-30B_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 5 January 2006
9 of 14
BUK753R4-30B; BUK763R4-30B
Philips Semiconductors
N-channel TrenchMOS standard level FET
Plastic single-ended surface mounted package (D2PAK); 3 leads (one lead cropped)
SOT404
A
A
E
1
mounting
base
D
1
D
H
D
2
L
p
1
3
c
b
e
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
D
E
A
A
b
UNIT
c
D
e
L
H
Q
1
1
p
D
max.
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
1.60
1.20
10.30
9.70
2.90 15.80 2.60
2.10 14.80 2.20
mm
11
2.54
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
04-10-13
05-02-11
SOT404
Fig 18. Package outline SOT404 (D2PAK)
BUK75_763R4-30B_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 5 January 2006
10 of 14
BUK753R4-30B; BUK763R4-30B
Philips Semiconductors
N-channel TrenchMOS standard level FET
8. Soldering
10.85
10.60
10.50
1.50
7.50
7.40
1.70
2.15
1.50
2.25
8.275
8.35
8.15
4.60
0.30
4.85
5.40
7.95
8.075
3.00
0.20
1.20
1.30
1.55
solder lands
solder resist
occupied area
solder paste
5.08
MSD057
Dimensions in mm.
Fig 19. Reflow soldering footprint for SOT404
BUK75_763R4-30B_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 5 January 2006
11 of 14
BUK753R4-30B; BUK763R4-30B
Philips Semiconductors
N-channel TrenchMOS standard level FET
9. Revision history
Table 6:
Revision history
Document ID
Release date Data sheet status Change notice Doc. number Supersedes
BUK75_763R4-30B_1
20060105
Product data sheet
-
-
-
BUK75_763R4-30B_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 5 January 2006
12 of 14
BUK753R4-30B; BUK763R4-30B
Philips Semiconductors
N-channel TrenchMOS standard level FET
10. Data sheet status
Level Data sheet status[1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
11. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
makes no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
13. Trademarks
Notice — All referenced brands, product names, service names and
trademarks are the property of their respective owners.
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
12. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
14. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
BUK75_763R4-30B_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 5 January 2006
13 of 14
BUK753R4-30B; BUK763R4-30B
Philips Semiconductors
N-channel TrenchMOS standard level FET
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information . . . . . . . . . . . . . . . . . . . . 13
3
4
5
5.1
6
7
8
9
10
11
12
13
14
© Koninklijke Philips Electronics N.V. 2006
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 5 January 2006
Document number: BUK75_763R4-30B_1
Published in The Netherlands
相关型号：
SI9130DB
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SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9135_11
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SI9136_11
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SI9130_11
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SI9137
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