BUK754R0-40C,127 [NXP]

N-channel TrenchMOS standard level FET TO-220 3-Pin;


型号：	BUK754R0-40C,127
厂家：	NXP
描述：	N-channel TrenchMOS standard level FET TO-220 3-Pin
文件：	总14页 (文件大小：187K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BUK754R0-40C

N-channel TrenchMOS standard level FET

Rev. 02 — 20 July 2010

Product data sheet

1. Product profile

1.1 General description

Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a

plastic package using advanced TrenchMOS technology. This product has been designed

and qualified to the appropriate AEC standard for use in high performance automotive

applications.

1.2 Features and benefits

AEC Q101 compliant

Avalanche robust

Suitable for standard level gate drive

Suitable for thermally demanding

environment up to 175°C rating

1.3 Applications

12V Motor, lamp and solenoid loads

High performance Pulse Width

Modulation (PWM) applications

High performance automotive power

systems

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

[1]

I_D

V_GS= 10 V; T_mb= 25 °C;

see Figure 1; see Figure 3

100

P_tot

total power dissipation T_mb= 25 °C; see Figure 2

203

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 25 A;

T_j= 25 °C; see Figure 11;

see Figure 12

3.4

mΩ

BUK754R0-40C

NXP Semiconductors

N-channel TrenchMOS standard level FET

Table 1.

Symbol

Quick reference data …continued

Parameter

Conditions

Min Typ Max Unit

Avalanche ruggedness

E_DS(AL)S

non-repetitive

drain-source

avalanche energy

I_D= 100 A; V_sup≤ 40 V;

R_GS= 50 Ω; V_GS= 10 V;

T_j(init)= 25 °C; unclamped

292 mJ

Dynamic characteristics

Q_GDgate-drain charge

V_GS= 10 V; I_D= 25 A;

V_DS= 32 V; T_j= 25 °C;

see Figure 14;

see Figure 13

[1] Continuous current is limited by package.

2. Pinning information

Table 2.

Pinning information

Symbol Description

Simplified outline

Graphic symbol

gate

drain

source

mounting base; connected to

drain

mbb076

2 3

SOT78 (TO-220AB)

3. Ordering information

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BUK754R0-40C

TO-220AB

plastic single-ended package; heatsink mounted; 1 mounting

hole; 3-lead TO-220AB

SOT78

BUK754R0-40C

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Product data sheet

Rev. 02 — 20 July 2010

2 of 14

BUK754R0-40C

NXP Semiconductors

N-channel TrenchMOS standard level FET

4. Limiting values

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_DS

Parameter

Conditions

Min

Max

Unit

drain-source voltage

drain-gate voltage

gate-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

R_GS= 20 kΩ

V_DGR

V_GS

[1]

[2]

-20

I_D

T_mb= 25 °C; V_GS= 10 V; see Figure 1;

see Figure 3

159

[3]

T_mb= 100 °C; V_GS= 10 V; see Figure 1

100

T_mb= 25 °C; V_GS= 10 V; see Figure 1;

see Figure 3

I_DM

peak drain current

T_mb= 25 °C; t_p≤ 10 µs; pulsed;

636

see Figure 3

P_tot

T_stg

T_j

total power dissipation

storage temperature

junction temperature

T_mb= 25 °C; see Figure 2

203

175

-55

°C

Source-drain diode

[3]

[2]

I_S

source current

T_mb= 25 °C

100

159

636

I_SM

peak source current

t_p≤ 10 µs; pulsed; T_mb= 25 °C

Avalanche ruggedness

E_DS(AL)Snon-repetitive drain-source

avalanche energy

I_D= 100 A; V_sup≤ 40 V; R_GS= 50 Ω;

V_GS= 10 V; T_j(init)= 25 °C; unclamped

292

[1] -20V accumulated duration not to exceed 168 hrs

[2] Current is limited by power dissipation chip rating.

[3] Continuous current is limited by package.

BUK754R0-40C

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Product data sheet

Rev. 02 — 20 July 2010

3 of 14

BUK754R0-40C

NXP Semiconductors

N-channel TrenchMOS standard level FET

03na19

003aac893

120

200

I_D

(%)

(A)

der

150

Capped at 100A due to package

100

150

200

125

175

_mb( C)

(°C)

Fig 1. Normalized continuous drain current as a

function of mounting base temperature.

Fig 2. Normalized total power dissipation as a

function of mounting base temperature

003aac581

10³

Limit R_DSon= V_DS/ I_D

_D(A)

10²

t_p= 10 μs

100

μs

1 ms

10 ms

100 ms

10^-1

10²

V_DS(V)

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

BUK754R0-40C

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Product data sheet

Rev. 02 — 20 July 2010

4 of 14

BUK754R0-40C

NXP Semiconductors

N-channel TrenchMOS standard level FET

5. Thermal characteristics

Table 5.

Symbol

R_th(j-mb)

Thermal characteristics

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from

junction to mounting base

see Figure 4

0.74

K/W

R_th(j-a)

thermal resistance from

junction to ambient

vertical in still air

K/W

003aac590

Z_{th (j-mb)}

(K/W)

= 0.5

0.2

10^-1

10^-2

10^-3

0.1

0.05

0.02

t_p

δ =

single pulse

t_p

10^-6

10^-5

10^-4

10^-3

10^-2

10^-1

t_p(s)

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

BUK754R0-40C

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Product data sheet

Rev. 02 — 20 July 2010

5 of 14

BUK754R0-40C

NXP Semiconductors

N-channel TrenchMOS standard level FET

6. Characteristics

Table 6.

Symbol

Characteristics

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V_(BR)DSSdrain-source breakdown

I_D= 0.25 mA; V_GS= 0 V; T_j= 25 °C

I_D= 0.25 mA; V_GS= 0 V; T_j= -55 °C

voltage

V_GS(th)

gate-source threshold

voltage

I_D= 1 mA; V_DS= V_GS; T_j= 25 °C;

see Figure 10

I_D= 1 mA; V_DS= V_GS; T_j= 175 °C;

see Figure 10

I_D= 1 mA; V_DS= V_GS; T_j= -55 °C;

see Figure 10

4.4

I_DSS

drain leakage current

gate leakage current

V_DS= 40 V; V_GS= 0 V; T_j= 175 °C

V_DS= 40 V; V_GS= 0 V; T_j= 25 °C

V_DS= 0 V; V_GS= 20 V; T_j= 25 °C

V_DS= 0 V; V_GS= -20 V; T_j= 25 °C

500

µA

mΩ

0.02

I_GSS

100

R_DSon

drain-source on-state

resistance

V_GS= 10 V; I_D= 25 A; T_j= 175 °C;

see Figure 11

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

see Figure 11; see Figure 12

3.4

mΩ

Dynamic characteristics

Q_G(tot)

Q_GS

total gate charge

I_D= 25 A; V_DS= 32 V; V_GS= 10 V;

T_j= 25 °C; see Figure 13;

see Figure 14

gate-source charge

Q_GD

gate-drain charge

I_D= 25 A; V_DS= 32 V; V_GS= 10 V;

T_j= 25 °C; see Figure 14;

see Figure 13

C_iss

C_oss

C_rss

t_d(on)

t_r

input capacitance

output capacitance

reverse transfer capacitance

turn-on delay time

rise time

V_GS= 0 V; V_DS= 25 V; f = 1 MHz;

T_j= 25 °C; see Figure 15

4391 5708 pF

800

535

1040 pF

696

V_DS= 30 V; R_L= 1.2 Ω; V_GS= 10 V;

R_G(ext)= 10 Ω; T_j= 25 °C

t_d(off)

t_f

turn-off delay time

fall time

129

L_D

internal drain inductance

from drain lead 6 mm from package to

centre of die ; T_j= 25 °C

4.5

from contact screw on mounting base

to centre of die ; T_j= 25 °C

3.5

7.5

L_S

internal source inductance

from source lead to source bond pad ;

T_j= 25 °C

Source-drain diode

V_SD

source-drain voltage

I_S= 25 A; V_GS= 0 V; T_j= 25 °C;

see Figure 16

0.83

1.2

t_rr

reverse recovery time

recovered charge

I_S= 20 A; dI_S/dt = -100 A/µs;

V_GS= -10 V; V_DS= 30 V; T_j= 25 °C

Q_r

BUK754R0-40C

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Product data sheet

Rev. 02 — 20 July 2010

6 of 14

BUK754R0-40C

NXP Semiconductors

N-channel TrenchMOS standard level FET

003aac583

003aac578

120

RDSon

g_fs

)

(S)

I_D(A)

_GS(V)

Fig 5. Drain-source on-state resistance as a function

of gate voltage; typical values

Fig 6. Forward transconductance as a function of

drain current; typical values

03aa35

003aac584

−1

150

I_D

(A)

min

typ

max

−2

−3

−4

−5

−6

120

T = 175 C

25 C

_GS(V)

(V)

Fig 7. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 8. Sub-threshold drain current as a function of

gate-source voltage

BUK754R0-40C

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Product data sheet

Rev. 02 — 20 July 2010

7 of 14

BUK754R0-40C

NXP Semiconductors

N-channel TrenchMOS standard level FET

03aa32

003aac576

200

V_GS(V) =

6.5

20 10

GS(th)

(V)

I_D

(A)

max

150

100

5.75

typ

5.5

5.25

min

−60

120

180

1.5

4.5

_DS(V)

T (°C)

Fig 9. Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig 10. Gate-source threshold voltage as a function of

junction temperature

03ne89

003aac579

4.5

5.25

5.5

5.75

V_GS(V) =

R_DSon

)

1.5

0.5

6.5

-60

120

180

120

180

T ( C)

I_D(A)

Fig 11. Normalized drain-source on-state resistance

factor as a function of junction temperature

Fig 12. Drain-source on-state resistance as a function

of drain current; typical values

BUK754R0-40C

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Product data sheet

Rev. 02 — 20 July 2010

8 of 14

BUK754R0-40C

NXP Semiconductors

N-channel TrenchMOS standard level FET

003aac586

V_GS

(V)

I_D= 25 A

T_j= 25 °C

GS(pl)

V_DS= 14V

32V

GS(th)

GS1

GS2

G(tot)

003aaa508

100

_G(nC)

Fig 13. Gate charge waveform definitions

Fig 14. Gate-source voltage as a function of gate

charge; typical values

003aac585

003aac587

10⁴

120

I_S

(A)

(pF)

C_iss

10³

C_oss

C_rss

175 C

T = 25 C

10²

10^-1

10²

V_DS(V)

0.5

1.5

V_SD(V)

Fig 15. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

Fig 16. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

values

BUK754R0-40C

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Product data sheet

Rev. 02 — 20 July 2010

9 of 14

BUK754R0-40C

NXP Semiconductors

N-channel TrenchMOS standard level FET

7. Package outline

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB

SOT78

mounting

base

(1)

(2)

(3×)

(2)

(2×)

b(3×)

10 mm

scale

DIMENSIONS (mm are the original dimensions)

(1)

(2)

(1)

UNIT

max.

4.7

4.1

1.40

1.25

0.9

0.6

1.6

1.0

1.3

1.0

0.7

0.4

16.0

15.2

6.6

5.9

10.3

9.7

15.0 3.30

12.8 2.79

3.8

3.5

3.0

2.7

2.6

2.2

2.54

3.0

Notes

1. Lead shoulder designs may vary.

2. Dimension includes excess dambar.

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC

JEDEC

JEITA

08-04-23

08-06-13

SOT78

SC-46

3-lead TO-220AB

Fig 17. Package outline SOT78 (TO-220AB)

BUK754R0-40C

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Product data sheet

Rev. 02 — 20 July 2010

10 of 14

BUK754R0-40C

NXP Semiconductors

N-channel TrenchMOS standard level FET

8. Revision history

Table 7.

Revision history

Document ID

Release date

Data sheet status

Change notice

Supersedes

BUK754R0-40C v.2

Modifications:

20100720

Product data sheet

BUK754R0-40C v.1

• Status changed from preliminary to product.

• Various changes to content.

BUK754R0-40C v.1

20090114

Preliminary data sheet

BUK754R0-40C

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Product data sheet

Rev. 02 — 20 July 2010

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BUK754R0-40C

NXP Semiconductors

N-channel TrenchMOS standard level FET

9. Legal information

9.1 Data sheet status

Document status^[1][2]

Product status^[3]

Definition

Objective [short] data sheet

Development

This document contains data from the objective specification for product development.

This document contains data from the preliminary specification.

This document contains the product specification.

Preliminary [short] data sheet Qualification

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term 'short data sheet' is explained in section "Definitions".

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nxp.com.

Suitability for use in automotive applications — This NXP

9.2 Definitions

Semiconductors product has been qualified for use in automotive

applications. The product is not designed, authorized or warranted to be

suitable for use in medical, military, aircraft, space or life support equipment,

nor in applications where failure or malfunction of an NXP Semiconductors

product can reasonably be expected to result in personal injury, death or

severe property or environmental damage. NXP Semiconductors accepts no

liability for inclusion and/or use of NXP Semiconductors products in such

equipment or applications and therefore such inclusion and/or use is at the

customer’s own risk.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall prevail.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on a weakness or default in the

customer application/use or the application/use of customer’s third party

customer(s) (hereinafter both referred to as “Application”). It is customer’s

sole responsibility to check whether the NXP Semiconductors product is

suitable and fit for the Application planned. Customer has to do all necessary

testing for the Application in order to avoid a default of the Application and the

product. NXP Semiconductors does not accept any liability in this respect.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to offer functions and qualities beyond those described in the

Product data sheet.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Limiting values — Stress above one or more limiting values (as defined in the

Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

9.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequential damages (including - without limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

No offer to sell or license — Nothing in this document may be interpreted or

construed as an offer to sell products that is open for acceptance or the grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

BUK754R0-40C

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Product data sheet

Rev. 02 — 20 July 2010

12 of 14

BUK754R0-40C

NXP Semiconductors

N-channel TrenchMOS standard level FET

Export control — This document as well as the item(s) described herein may

be subject to export control regulations. Export might require a prior

authorization from national authorities.

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,

FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,

ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,

QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,

TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.

9.4 Trademarks

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

Corporation.

10. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

BUK754R0-40C

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Product data sheet

Rev. 02 — 20 July 2010

13 of 14

BUK754R0-40C

NXP Semiconductors

N-channel TrenchMOS standard level FET

11. Contents

Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1

1.2

1.3

1.4

General description . . . . . . . . . . . . . . . . . . . . . .1

Features and benefits. . . . . . . . . . . . . . . . . . . . .1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Quick reference data . . . . . . . . . . . . . . . . . . . . .1

Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

Ordering information. . . . . . . . . . . . . . . . . . . . . .2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3

Thermal characteristics . . . . . . . . . . . . . . . . . . .5

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6

Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10

Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11

Legal information. . . . . . . . . . . . . . . . . . . . . . . .12

Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12

Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .12

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13

9.1

9.2

9.3

9.4

Contact information. . . . . . . . . . . . . . . . . . . . . .13

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 20 July 2010

Document identifier: BUK754R0-40C

BUK754R0-40C,127 [NXP]

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