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BUK754R3-75C [NXP]

N-channel TrenchMOS standard level FET; N沟道的TrenchMOS标准水平FET
BUK754R3-75C
型号： BUK754R3-75C
厂家： NXP    NXP
描述：

N-channel TrenchMOS standard level FET
N沟道的TrenchMOS标准水平FET
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BUK754R3-75C; BUK7E4R3-75C  
N-channel TrenchMOS standard level FET  
Rev. 01 — 10 August 2006  
Product data sheet  
1. Product profile  
1.1 General description  
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package,  
using Philips Ultra High-Performance (UHP) automotive TrenchMOS technology.  
1.2 Features  
I TrenchMOS technology  
I Q101 compliant  
I 175 °C rated  
I Standard level compatible  
1.3 Applications  
I Automotive systems  
I General purpose power switching  
I 12 V, 24 V and 42 V loads  
I Motors, lamps and solenoids  
1.4 Quick reference data  
I EDS(AL)S ≤ 630 mJ  
I ID ≤ 100 A  
I RDSon = 3.7 mΩ (typ)  
I Ptot ≤ 333 W  
2. Pinning information  
Table 1.  
Pinning  
Pin  
1
Description  
gate (G)  
Simplified outline  
Symbol  
mb  
D
S
mb  
2
drain (D)  
3
source (S)  
G
mb  
mounting base; connected to  
drain  
mbb076  
1
2 3  
1
2 3  
SOT78 (TO-220AB)  
SOT226 (I2PAK)  
BUK754R3-75C; BUK7E4R3-75C  
Philips Semiconductors  
N-channel TrenchMOS standard level FET  
3. Ordering information  
Table 2.  
Ordering information  
Type number  
Package  
Name  
Description  
Version  
BUK754R3-75C  
BUK7E4R3-75C  
SC-46  
plastic single-ended package; heatsink mounted; 1 mounting hole; SOT78  
3-lead TO-220AB  
I2PAK  
plastic single-ended package (I2PAK); low-profile 3-lead TO-220AB SOT226  
4. Limiting values  
Table 3.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol Parameter  
Conditions  
Min  
Max  
75  
Unit  
V
VDS  
VDGR  
VGS  
ID  
drain-source voltage  
-
-
-
drain-gate voltage (DC)  
gate-source voltage  
drain current  
RGS = 20 kΩ  
75  
V
±20  
V
[1]  
[2]  
[3]  
[3]  
VGS = 10 V; see Figure 2 and 3  
limited by power dissipation at Tmb = 25 °C  
limited by package at Tmb = 25 °C  
limited by package at Tmb = 100 °C  
Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3  
Tmb = 25 °C; see Figure 1  
-
192  
100  
A
-
A
-
100  
A
IDM  
Ptot  
Tstg  
Tj  
peak drain current  
-
769  
A
total power dissipation  
storage temperature  
junction temperature  
-
333  
W
°C  
°C  
−55  
−55  
+175  
+175  
Source-drain diode  
[1]  
[2]  
[3]  
IDR  
reverse drain current  
Tmb = 25 °C  
limited by power dissipation  
limited by package  
-
-
-
192  
100  
769  
A
A
A
IDRM  
peak reverse drain current  
Tmb = 25 °C; pulsed; tp ≤ 10 µs  
Avalanche ruggedness  
EDS(AL)S non-repetitive drain-source  
avalanche energy  
unclamped inductive load; ID = 100 A; VDS ≤ 75 V;  
-
-
630  
-
mJ  
mJ  
RGS = 50 Ω; VGS = 10 V; starting at Tj = 25 °C  
[4]  
EDS(AL)R repetitive drain-source  
avalanche energy  
[1] Refer to document 9397 750 12572 for further information.  
[2] Current is limited by chip power dissipation rating.  
[3] Continuous current is limited by package.  
[4] Conditions:  
a) Maximum value not quoted. Repetitive rating defined in Figure 16.  
b) Single-pulse avalanche rating limited by Tj(max) of 175 °C.  
c) Repetitive avalanche rating limited by an average junction temperature of 170 °C.  
d) Refer to application note AN10273 for further information.  
BUK75_7E4R3-75C_1  
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.  
Product data sheet  
Rev. 01 — 10 August 2006  
2 of 13  
BUK754R3-75C; BUK7E4R3-75C  
Philips Semiconductors  
N-channel TrenchMOS standard level FET  
03aa16  
003aab376  
120  
200  
ID  
Pder  
(%)  
(A)  
150  
100  
50  
80  
40  
0
(1)  
0
0
50  
100  
150  
200  
0
50  
100  
150  
200  
Tmb ( C)  
°
T
mb (°C)  
V
GS ≥ 10 V  
Ptot  
Pder  
=
× 100 %  
-----------------------  
Ptot(25°C)  
(1) Capped at 100 A due to package.  
Fig 1. Normalized total power dissipation as a  
function of mounting base temperature  
Fig 2. Continuous drain current as a function of  
mounting base temperature  
003aab393  
103  
Limit RDSon = VDS / ID  
tp = 10 µs  
ID  
(A)  
102  
(1)  
10  
100 µs  
1 ms  
10 ms  
DC  
1
100 ms  
10-1  
10-1  
1
10  
102  
VDS (V)  
Tmb = 25 °C; IDM is single pulse.  
(1) Capped at 100 A due to package.  
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage  
BUK75_7E4R3-75C_1  
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.  
Product data sheet  
Rev. 01 — 10 August 2006  
3 of 13  
BUK754R3-75C; BUK7E4R3-75C  
Philips Semiconductors  
N-channel TrenchMOS standard level FET  
5. Thermal characteristics  
Table 4.  
Symbol  
Rth(j-mb)  
Rth(j-a)  
Thermal characteristics  
Parameter  
Conditions  
Min  
Typ  
Max Unit  
thermal resistance from junction to mounting base  
-
-
0.45 K/W  
thermal resistance from junction to ambient  
SOT78  
vertical in free air  
vertical in free air  
-
-
60  
50  
-
-
K/W  
K/W  
SOT226  
003aab340  
1
Zth(j-mb)  
(K/W)  
δ = 0.5  
0.2  
0.1  
10-1  
10-2  
10-3  
0.05  
0.02  
tp  
δ =  
P
T
single shot  
t
tp  
T
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
1
tp (s)  
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration  
BUK75_7E4R3-75C_1  
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.  
Product data sheet  
Rev. 01 — 10 August 2006  
4 of 13  
BUK754R3-75C; BUK7E4R3-75C  
Philips Semiconductors  
N-channel TrenchMOS standard level FET  
6. Characteristics  
Table 5.  
Characteristics  
Tj = 25 °C unless otherwise specified.  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Static characteristics  
V(BR)DSS drain-source breakdown voltage  
ID = 250 µA; VGS = 0 V  
Tj = 25 °C  
75  
70  
-
-
-
-
V
V
Tj = −55 °C  
VGS(th)  
gate-source threshold voltage  
drain leakage current  
ID = 1 mA; VDS = VGS  
see Figure 9 and 10  
;
Tj = 25 °C  
Tj = 175 °C  
Tj = −55 °C  
2
1
-
3
-
4
V
V
V
-
-
4.4  
IDSS  
VDS = 75 V; VGS = 0 V  
Tj = 25 °C  
-
-
-
0.02  
1
µA  
µA  
nA  
Tj = 175 °C  
-
500  
100  
IGSS  
gate leakage current  
VGS = ±20 V; VDS = 0 V  
2
RDSon  
drain-source on-state resistance  
VGS = 10 V; ID = 25 A;  
see Figure 6 and 8  
Tj = 25 °C  
-
-
3.7  
-
4.3  
9
mΩ  
mΩ  
Tj = 175 °C  
Dynamic characteristics  
QG(tot)  
QGS  
QGD  
VGS(pl)  
Ciss  
Coss  
Crss  
td(on)  
tr  
total gate charge  
ID = 25 A; VDD = 60 V; VGS = 10 V;  
see Figure 14  
-
-
-
-
-
-
-
-
-
-
-
-
142  
36  
67  
5
-
-
-
-
nC  
nC  
nC  
V
gate-source charge  
gate-drain charge  
gate-source plateau voltage  
input capacitance  
output capacitance  
reverse transfer capacitance  
turn-on delay time  
rise time  
VGS = 0 V; VDS = 25 V; f = 1 MHz;  
see Figure 12  
8744 11659 pF  
923  
579  
61  
1108  
pF  
pF  
ns  
ns  
ns  
ns  
nH  
793  
VDS = 30 V; RL = 1.2 Ω;  
-
-
-
-
-
V
GS = 10 V; RG = 10 Ω  
100  
194  
90  
td(off)  
tf  
turn-off delay time  
fall time  
LD  
internal drain inductance  
from drain lead 6 mm from package to  
center of die  
4.5  
from contact screw on mounting base to  
center of die  
-
-
-
3.5  
2.5  
7.5  
-
-
-
nH  
nH  
nH  
from upper edge of drain mounting base  
to center of die SOT226  
LS  
internal source inductance  
from source lead to source bonding pad  
BUK75_7E4R3-75C_1  
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.  
Product data sheet  
Rev. 01 — 10 August 2006  
5 of 13  
BUK754R3-75C; BUK7E4R3-75C  
Philips Semiconductors  
N-channel TrenchMOS standard level FET  
Table 5.  
Characteristics …continued  
Tj = 25 °C unless otherwise specified.  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Source-drain diode  
VSD  
trr  
source-drain voltage  
reverse recovery time  
recovered charge  
IS = 25 A; VGS = 0 V; see Figure 15  
-
-
-
0.85 1.2  
V
IS = 20 A; dIS/dt = −100 A/µs;  
83  
-
-
ns  
nC  
V
GS = 0 V; VR = 25 V  
Qr  
155  
003aab377  
003aab378  
200  
12  
RDSon  
ID  
20  
(mΩ)  
(A)  
10  
8
8
6
150  
100  
50  
5.5  
6
5
4
VGS (V) = 4.5  
0
2
0
2
4
6
8
10  
5
10  
15  
20  
V
GS (V)  
V
DS (V)  
Tj = 25 °C  
Tj = 25 °C; ID = 25 A  
Fig 5. Output characteristics: drain current as a  
function of drain-source voltage; typical values  
Fig 6. Drain source on-state resistance as a function  
of gate-source voltage; typical values  
03aa28  
003aab379  
8
2.4  
a
RDSon  
(mΩ)  
VGS (V) = 5.5  
1.8  
6
6
1.2  
0.6  
0
8
4
10  
20  
2
0
70  
140  
210  
-60  
0
60  
120  
180  
I
D (A)  
Tj (°C)  
ID = 1 mA; VDS = VGS  
RDSon  
a =  
-----------------------------  
RDSon(25°C)  
Fig 7. Drain-source on-state resistance as a function  
of drain current; typical values  
Fig 8. Normalized drain-source on-state resistance  
factor as a function of junction temperature  
BUK75_7E4R3-75C_1  
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.  
Product data sheet  
Rev. 01 — 10 August 2006  
6 of 13  
BUK754R3-75C; BUK7E4R3-75C  
Philips Semiconductors  
N-channel TrenchMOS standard level FET  
03aa32  
03aa35  
−1  
−2  
−3  
−4  
−5  
−6  
5
10  
V
I
GS(th)  
(V)  
D
(A)  
min  
typ  
max  
4
3
2
1
0
10  
10  
10  
10  
10  
max  
typ  
min  
−60  
0
60  
120  
180  
0
2
4
6
T (°C)  
V
(V)  
j
GS  
ID = 1 mA; VDS = VGS  
Tj = 25 °C; VDS = VGS  
Fig 9. Gate-source threshold voltage as a function of  
junction temperature  
Fig 10. Sub-threshold drain current as a function of  
gate-source voltage  
003aab380  
003aab381  
180  
16000  
C
(pF)  
gfs  
(S)  
Ciss  
12000  
120  
60  
0
8000  
Coss  
Crss  
4000  
0
10-1  
1
10  
102  
0
75  
150  
225  
VDS (V)  
ID (A)  
Tj = 25 °C; VDS = 25 V  
VGS = 0 V; f = 1 MHz  
Fig 11. Forward transconductance as a function of  
drain current; typical values  
Fig 12. Input, output and reverse transfer capacitances  
as a function of drain-source voltage; typical  
values  
BUK75_7E4R3-75C_1  
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.  
Product data sheet  
Rev. 01 — 10 August 2006  
7 of 13  
BUK754R3-75C; BUK7E4R3-75C  
Philips Semiconductors  
N-channel TrenchMOS standard level FET  
003aab383  
003aab382  
200  
10  
VGS  
(V)  
8
VDS = 14 V  
ID  
(A)  
VDS = 60 V  
6
4
2
0
100  
Tj = 25 °C  
Tj = 175 °C  
0
0
50  
100  
150  
200  
0
2
4
6
8
GS (V)  
V
QG (nC)  
VDS = 25 V  
Tj = 25 °C; ID = 25 A  
Fig 13. Transfer characteristics: drain current as a  
function of gate-source voltage; typical values  
Fig 14. Gate-source voltage as a function of gate  
charge; typical values  
003aab384  
003aab385  
103  
250  
IS  
(A)  
IAL  
(A)  
200  
150  
102  
(1)  
100  
(2)  
10  
Tj = 175 °C  
50  
Tj = 25 °C  
(3)  
1
0
10-3  
10-2  
10-1  
1
10  
0
0.5  
1
1.5  
2
V
SD (V)  
tAL (ms)  
VGS = 0 V  
See Table note 4 of Table 3 “Limiting values”.  
(1) Single-pulse; Tj = 25 °C.  
(2) Single-pulse; Tj = 150 °C.  
(3) Repetitive.  
Fig 15. Source current as a function of source-drain  
voltage; typical values  
Fig 16. Single-pulse and repetitive avalanche rating;  
avalanche current as a function of avalanche  
time  
BUK75_7E4R3-75C_1  
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.  
Product data sheet  
Rev. 01 — 10 August 2006  
8 of 13  
BUK754R3-75C; BUK7E4R3-75C  
Philips Semiconductors  
N-channel TrenchMOS standard level FET  
7. Package outline  
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB  
SOT78  
E
p
A
A
1
q
mounting  
base  
D
1
D
L
L
2
1
Q
b
1
L
1
2
3
b
c
e
e
0
5
10 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
b
L
max.  
2
e
A
b
D
E
L
D
L
1
A
c
UNIT  
p
q
Q
1
1
1
4.7  
4.1  
1.40  
1.25  
0.9  
0.6  
1.45  
1.00  
0.7  
0.4  
16.0  
15.2  
6.6  
5.9  
10.3  
9.7  
15.0  
12.8  
3.30  
2.79  
3.8  
3.5  
3.0  
2.7  
2.6  
2.2  
mm  
3.0  
2.54  
REFERENCES  
JEDEC JEITA  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
05-03-22  
05-10-25  
SOT78  
3-lead TO-220AB  
SC-46  
Fig 17. Package outline SOT78 (TO-220AB)  
BUK75_7E4R3-75C_1  
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.  
Product data sheet  
Rev. 01 — 10 August 2006  
9 of 13  
BUK754R3-75C; BUK7E4R3-75C  
Philips Semiconductors  
N-channel TrenchMOS standard level FET  
Plastic single-ended package (I2PAK); low-profile 3-lead TO-220AB  
SOT226  
A
A
E
D
1
1
mounting  
base  
D
L
1
Q
b
1
L
1
2
3
b
c
e
e
0
5
10 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
D
max  
D
A
b
c
E
UNIT  
A
b
e
L
L
Q
1
1
1
1
4.5  
4.1  
1.40  
1.27  
0.85  
0.60  
1.3  
1.0  
0.7  
0.4  
1.6  
1.2  
10.3  
9.7  
15.0  
13.5  
3.30  
2.79  
2.6  
2.2  
mm  
11  
2.54  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
JEITA  
low-profile  
3-lead TO-220AB  
05-06-23  
06-02-14  
SOT226  
Fig 18. Package outline SOT226 (I2PAK)  
BUK75_7E4R3-75C_1  
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.  
Product data sheet  
Rev. 01 — 10 August 2006  
10 of 13  
BUK754R3-75C; BUK7E4R3-75C  
Philips Semiconductors  
N-channel TrenchMOS standard level FET  
8. Revision history  
Table 6.  
Revision history  
Document ID  
Release date  
Data sheet status  
Change notice  
Supersedes  
BUK75_7E4R3-75C_1  
20060810  
Product data sheet  
-
-
BUK75_7E4R3-75C_1  
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.  
Product data sheet  
Rev. 01 — 10 August 2006  
11 of 13  
BUK754R3-75C; BUK7E4R3-75C  
Philips Semiconductors  
N-channel TrenchMOS standard level FET  
9. Legal information  
9.1  
Data sheet status  
Document status[1][2]  
Product status[3]  
Definition  
Objective [short] data sheet  
Development  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.semiconductors.philips.com.  
to result in personal injury, death or severe property or environmental  
damage. Philips Semiconductors accepts no liability for inclusion and/or use  
of Philips Semiconductors products in such equipment or applications and  
9.2  
Definitions  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. Philips Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
therefore such inclusion and/or use is at the customer’s own risk.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. Philips Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) may cause permanent  
damage to the device. Limiting values are stress ratings only and operation of  
the device at these or any other conditions above those given in the  
Characteristics sections of this document is not implied. Exposure to limiting  
values for extended periods may affect device reliability.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local Philips Semiconductors  
sales office. In case of any inconsistency or conflict with the short data sheet,  
the full data sheet shall prevail.  
Terms and conditions of sale — Philips Semiconductors products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.semiconductors.philips.com/profile/terms, including those  
pertaining to warranty, intellectual property rights infringement and limitation  
of liability, unless explicitly otherwise agreed to in writing by Philips  
9.3  
Disclaimers  
General — Information in this document is believed to be accurate and  
reliable. However, Philips Semiconductors does not give any representations  
or warranties, expressed or implied, as to the accuracy or completeness of  
such information and shall have no liability for the consequences of use of  
such information.  
Semiconductors. In case of any inconsistency or conflict between information  
in this document and such terms and conditions, the latter will prevail.  
No offer to sell or license — Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
Right to make changes — Philips Semiconductors reserves the right to  
make changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
9.4  
Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
Suitability for use — Philips Semiconductors products are not designed,  
authorized or warranted to be suitable for use in medical, military, aircraft,  
space or life support equipment, nor in applications where failure or  
malfunction of a Philips Semiconductors product can reasonably be expected  
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.  
10. Contact information  
For additional information, please visit: http://www.semiconductors.philips.com  
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com  
BUK75_7E4R3-75C_1  
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.  
Product data sheet  
Rev. 01 — 10 August 2006  
12 of 13  
BUK754R3-75C; BUK7E4R3-75C  
Philips Semiconductors  
N-channel TrenchMOS standard level FET  
11. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
General description. . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1  
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11  
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
9.1  
9.2  
9.3  
9.4  
10  
11  
Contact information. . . . . . . . . . . . . . . . . . . . . 12  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© Koninklijke Philips Electronics N.V. 2006.  
All rights reserved.  
For more information, please visit: http://www.semiconductors.philips.com.  
For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com.  
Date of release: 10 August 2006  
Document identifier: BUK75_7E4R3-75C_1  

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