BUK755R4-100E,127 [NXP]
N-channel TrenchMOS standard level FET TO-220 3-Pin;
| 型号： | BUK755R4-100E,127 |
| 厂家： | 
NXP |
| 描述： | N-channel TrenchMOS standard level FET TO-220 3-Pin 局域网 开关 脉冲 晶体管 |
| 文件： | 总13页 (文件大小：206K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUK755R4-100E
N-channel TrenchMOS standard level FET
11 September 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th) rating of greater than 1V at 175 °C
•
•
•
•
1.3 Applications
12V, 24V and 48V Automotive systems
•
•
•
•
•
•
Electric and electro-hydraulic power steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching
1.4 Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
100
120
349
Unit
V
VDS
ID
drain-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C; Fig. 1
-
-
-
-
-
-
[1]
A
Ptot
total power dissipation Tmb = 25 °C; Fig. 2
W
Static characteristics
RDSon drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 11
-
-
4.1
65
5.2
-
mΩ
nC
VGS = 10 V; ID = 25 A; VDS = 80 V;
Tj = 25 °C; Fig. 13; Fig. 14
[1] Continuous current is limited by package.
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NXP Semiconductors
BUK755R4-100E
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
mb
D
1
G
D
S
D
gate
2
drain
source
G
3
mbb076
S
mb
mounting base; connected to
drain
1
2 3
TO-220AB (SOT78A)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BUK755R4-100E
TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78A
4. Marking
Table 4.
Marking codes
Type number
Marking code
BUK755R4-100E
BUK755R4-100E
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
100
100
20
Unit
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
RGS = 20 kΩ
-
V
V
V
A
A
A
VDGR
VGS
-
Tj = 175 °C; DC
-20
ID
Tmb = 25 °C; VGS = 10 V; Fig. 1
Tmb = 100 °C; VGS = 10 V; Fig. 1
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4
[1]
-
-
-
120
112
631
IDM
peak drain current
BUK755R4-100E
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Product data sheet
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NXP Semiconductors
BUK755R4-100E
N-channel TrenchMOS standard level FET
Symbol
Ptot
Parameter
Conditions
Min
-
Max
349
175
175
Unit
W
total power dissipation
storage temperature
junction temperature
Tmb = 25 °C; Fig. 2
Tstg
-55
-55
°C
Tj
°C
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C
[1]
-
-
120
631
A
A
ISM
pulsed; tp ≤ 10 µs; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
ID = 120 A; Vsup ≤ 100 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped;
Fig. 3
[2][3]
-
387
mJ
[1] Continuous current is limited by package.
[2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[3] Refer to application note AN10273 for further information.
003aai260
03aa16
120
180
I
P
D
der
(A)
(%)
80
120
(1)
60
40
0
0
0
50
100
150
200
( C)
0
50
100
150
200
T
°
mb
T
(°C)
mb
(1) Capped at 120A due to package
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
Fig. 1. Continuous drain current as a function of
mounting base temperature
BUK755R4-100E
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Product data sheet
11 September 2012
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NXP Semiconductors
BUK755R4-100E
N-channel TrenchMOS standard level FET
003aah029
103
IAL
(A)
102
(1)
10
1
(2)
(3)
10-1
10-3
10-2
10-1
1
10
tAL (ms)
Fig. 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
003aaf633
3
2
10
10
I
D
Limit R
= V / I
DS D
DSon
(A)
t
= 10 us
p
100 us
10
DC
1 ms
10 ms
100 ms
1
-1
10
2
3
1
10
10
10
V
(V)
DS
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
6. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 5
-
-
0.43
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
vertical in free air
-
60
-
K/W
BUK755R4-100E
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Product data sheet
11 September 2012
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NXP Semiconductors
BUK755R4-100E
N-channel TrenchMOS standard level FET
003aaf570
1
Zth(j-mb)
= 0.5
(K/W)
0.2
10-1
0.1
0.05
tp
P
10-2
T
0.02
t
tp
single shot
10-3
T
10-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration.
7. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
100
90
-
-
V
V
V
-
-
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
2.4
3
4
voltage
Fig. 9; Fig. 10
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 9
1
-
-
-
-
V
V
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 9
4.5
IDSS
drain leakage current
gate leakage current
VDS = 100 V; VGS = 0 V; Tj = 25 °C
VDS = 100 V; VGS = 0 V; Tj = 175 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
-
-
-
-
0.15
-
2
µA
µA
nA
nA
mΩ
500
100
100
5.2
IGSS
2
2
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 11
4.1
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 11; Fig. 12
-
-
14
mΩ
Dynamic characteristics
QG(tot) total gate charge
QGS
ID = 25 A; VDS = 80 V; VGS = 10 V;
Tj = 25 °C; Fig. 13; Fig. 14
-
-
-
180
34
-
-
-
nC
nC
nC
gate-source charge
gate-drain charge
QGD
65
BUK755R4-100E
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Product data sheet
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NXP Semiconductors
BUK755R4-100E
N-channel TrenchMOS standard level FET
Symbol
Ciss
Parameter
Conditions
Min
Typ
Max
Unit
input capacitance
output capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; Fig. 15
-
-
-
8860 11810 pF
Coss
770
546
925
750
pF
pF
Crss
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 80 V; RL = 3.2 Ω; VGS = 10 V;
RG(ext) = 5 Ω
-
-
-
-
-
37
-
-
-
-
-
ns
ns
ns
ns
nH
62
turn-off delay time
fall time
158
80
LD
internal drain
inductance
from upper edge of drain mounting
base to centre of die
2.5
from drain lead 6mm from package to
centre of die
-
-
4.5
7.5
-
-
nH
nH
LS
internal source
inductance
from source lead to source bond pad
Source-drain diode
VSD source-drain voltage
trr
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16
-
-
-
0.77
65
1.2
V
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
-
-
ns
nC
VDS = 25 V
Qr
recovered charge
191
003aai249
003aai250
360
10
7
6
V
(V) = 10
GS
R
DSon
I
(m
)
D
Ω
(A)
7.5
5.5
240
5
5
120
2.5
0
4.5
0
0
1
2
3
0
5
10
15
20
V
(V)
V
(V)
GS
DS
Tj = 25 °C; tp = 300 μs
Fig. 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig. 6. Output characteristics; drain current as a
function of drain-source voltage; typical values
BUK755R4-100E
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Product data sheet
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NXP Semiconductors
BUK755R4-100E
N-channel TrenchMOS standard level FET
003aaf635
003aah027
400
5
V
GS(th)
(V)
ID
(A)
max
4
3
2
1
0
300
200
100
typ
min
°
Tj = 175
C
°
Tj = 25
C
0
-60
0
60
120
180
0
2
4
6
8
T ( C)
VGS (V)
°
j
Fig. 9. Gate-source threshold voltage as a function of
junction temperature
Fig. 8. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
003aah028
003aai255
-1
10
15
I
D
R
(A)
5
5.5
4.5
DSon
(m
)
-2
Ω
10
10
typ
max
min
-3
-4
-5
-6
10
10
10
10
6
7
5
V
(V) = 10
GS
0
0
2
4
6
0
120
240
360
I
(A)
V
(V)
D
GS
Tj = 25 °C; tp = 300 μs
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
BUK755R4-100E
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Product data sheet
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NXP Semiconductors
BUK755R4-100E
N-channel TrenchMOS standard level FET
003aag818
003aaf641
3
a
10
VGS
(V)
2.4
1.8
1.2
0.6
0
8
6
4
2
0
14 V
VDS = 80 V
0
50
100
150
200
-60
0
60
120
180
°
QG (nC)
Tj ( C)
Tj = 25 °C; ID = 25 A
Fig. 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig. 13. Gate-source voltage as a function of gate
charge; typical values
003aaf637
105
V
DS
C
(pF)
I
D
104
V
Ciss
GS(pl)
V
GS(th)
GS
V
103
Q
GS1
Q
GS2
Coss
Q
GS
Q
GD
Q
G(tot)
Crss
003aaa508
102
10-1
102
103
Fig. 14. Gate charge waveform definitions
1
10
VDS (V)
VGS = 0 V; f = 1 MHz
Fig. 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK755R4-100E
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Product data sheet
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NXP Semiconductors
BUK755R4-100E
N-channel TrenchMOS standard level FET
003aaf642
200
IS
(A)
150
100
50
0
Tj = 175 °C
Tj = 25 °C
0
0.3
0.6
0.9
1.2
VSD (V)
VGS = 0 V
Fig. 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
BUK755R4-100E
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Product data sheet
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NXP Semiconductors
BUK755R4-100E
N-channel TrenchMOS standard level FET
8. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78A
E
p
A
A
1
q
mounting
base
D
1
D
(1)
1
L
L
2
Q
b
1
L
1
2
3
b
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
b
L
max.
(1)
2
e
A
b
1
D
E
D
L
c
L
1
A
1
UNIT
p
q
Q
1
4.5
4.1
1.39
1.27
0.9
0.6
1.3
1.0
0.7
0.4
15.8
15.2
6.4
5.9
10.3
9.7
15.0
13.5
3.30
2.79
3.8
3.6
3.0
2.7
2.6
2.2
mm
3.0
2.54
Note
1. Terminals in this zone are not tinned.
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
IEC
ISSUE DATE
03-01-22
05-03-14
SOT78A
3-lead TO-220AB
SC-46
Fig. 17. Package outline TO-220AB (SOT78A)
BUK755R4-100E
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Product data sheet
11 September 2012
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NXP Semiconductors
BUK755R4-100E
N-channel TrenchMOS standard level FET
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
9. Legal information
9.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
9.2 Definitions
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the NXP Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
9.3 Disclaimers
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
BUK755R4-100E
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Product data sheet
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NXP Semiconductors
BUK755R4-100E
N-channel TrenchMOS standard level FET
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
9.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
BUK755R4-100E
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Product data sheet
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NXP Semiconductors
BUK755R4-100E
N-channel TrenchMOS standard level FET
10. Contents
1
Product profile ....................................................... 1
General description .............................................. 1
Features and benefits ...........................................1
Applications ..........................................................1
Quick reference data ............................................ 1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................2
Thermal characteristics .........................................4
Characteristics .......................................................5
Package outline ................................................... 10
9
Legal information .................................................11
Data sheet status ............................................... 11
Definitions ...........................................................11
Disclaimers .........................................................11
Trademarks ........................................................ 12
9.1
9.2
9.3
9.4
© NXP B.V. 2012. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 11 September 2012
BUK755R4-100E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
11 September 2012
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