BUK7840-55 [NXP]

TrenchMOS transistor Standard level FET; 的TrenchMOS晶体管标准水平FET


型号：	BUK7840-55
厂家：	NXP
描述：	TrenchMOS transistor Standard level FET 的TrenchMOS晶体管标准水平FET 晶体晶体管
文件：	总9页 (文件大小：73K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Philips Semiconductors

Product specification

TrenchMOS transistor

Standard level FET

BUK7840-55

GENERAL DESCRIPTION

QUICK REFERENCE DATA

N-channel enhancement mode logic

level field-effect power transistor in a

plastic envelope suitable for surface

mounting. Using ’trench’ technology

the device features very low on-state

resistance and has integral zener

diodes giving ESD protection. It is

intended for use in automotive and

SYMBOL

PARAMETER

MAX.

UNIT

V_DS

I_D

P_tot

T_j

Drain-source voltage

Drain current

Total power dissipation

Junction temperature

Drain-source on-state

10.7

1.8

150

˚C

mΩ

R_DS(ON)

resistance

V_GS= 10 V

general

purpose

switching

applications.

PINNING - SOT223

PIN CONFIGURATION

SYMBOL

DESCRIPTION

gate

drain

source

drain (tab)

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_DS

V_DGR

±V_GS

I_D

Drain-source voltage

10.7

Drain-gate voltage

Gate-source voltage

Drain current (DC)

R_GS= 20 kΩ

T_sp= 25 ˚C

On PCB in Fig.19

T_amb= 25 ˚C

On PCB in Fig.19

T_amb= 100 ˚C

T_sp= 25 ˚C

On PCB in Fig.19

T_amb= 25 ˚C

I_D

Drain current (DC)

3.1

I_DM

P_tot

Drain current (pulse peak value)

Total power dissipation

10.7

1.8

T_stg, T_j

Storage & operating temperature

- 55

150

˚C

ESD LIMITING VALUE

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_C

Electrostatic discharge capacitor

voltage

Human body model

(100 pF, 1.5 kΩ)

January 1998

Rev 1.000

Philips Semiconductors

Product specification

TrenchMOS transistor

Standard level FET

BUK7840-55

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

R_{th j-sp}

R_{th j-amb}

From junction to solder point

From junction to ambient

Mounted on any PCB

Mounted on PCB of Fig.18

K/W

STATIC CHARACTERISTICS

T_j= 25˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V_(BR)DSS

Drain-source breakdown

voltage

Gate threshold voltage

V_GS= 0 V; I_D= 0.25 mA

2.0

1.2

µA

T_j= -55˚C

V_GS(TO)

V_DS= V_GS; I_D= 1 mA

3.0

0.05

0.04

4.0

4.4

100

T_j= 150˚C

T_j= -55˚C

I_DSS

I_GSS

Zero gate voltage drain current V_DS= 55 V; V_GS= 0 V;

Gate source leakage current V_GS= ±10 V

Gate source breakdown voltage I_G= ±1 mA

T_j= 150˚C

±V_(BR)GSS

R_DS(ON)

Drain-source on-state

resistance

V_GS= 10 V; I_D= 5 A

mΩ

T_j= 150˚C

DYNAMIC CHARACTERISTICS

T_mb= 25˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

g_fs

Forward transconductance

V_DS= 25 V; I_D= 5 A; T_j= 25˚C

V_GS= 0 V; V_DS= 25 V; f = 1 MHz

C_iss

C_oss

C_rss

Input capacitance

Output capacitance

Feedback capacitance

700

200

100

880

240

140

t_{d on}

t_r

t_{d off}

t_f

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

V_DD= 30 V; I_D= 9 A;

V_GS= 10 V; R_g= 10 Ω

T_j= 25˚C

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

T_j= -55 to 175˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

I_DR

Continuous reverse drain

current

T_sp= 25˚C

10.7

I_DRM

V_SD

Pulsed reverse drain current

Diode forward voltage

T_sp= 25˚C

I_F= 5 A; V_GS= 0 V

1.1

0.85

t_rr

Q_rr

Reverse recovery time

Reverse recovery charge

I_F= 5 A; -dI_F/dt = 100 A/µs;

V_GS= -10 V; V_R= 30 V

0.3

µC

January 1998

Rev 1.000

Philips Semiconductors

Product specification

TrenchMOS transistor

Standard level FET

BUK7840-55

AVALANCHE LIMITING VALUE

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

W_DSS

Drain-source non-repetitive

unclamped inductive turn-off

energy

I_D= 3.6 A; V_DD≤ 25 V;

V_GS= 10 V; R_GS= 50 Ω; T_sp= 25 ˚C

Normalised Power Derating

PD%

BUKX840-55

120

110

100

ID/A

tp =

RDS(ON) = VDS/ID

1 us

10 us

100 us

1 ms

10 ms

100 ms

Tmb /

100

120

140

0.1

VDS/V

Fig.1. Normalised power dissipation.

PD% = 100 P_D/P_{D 25 ˚C}= f(T_sp)

Fig.3. Safe operating area. T_sp= 25 ˚C

I_D& I_DM= f(V_DS); I_DMsingle pulse; parameter t_p

Normalised Current Derating

ID%

BUK9840-55

Zth / (K/W)

120

110

100

1E+02

3E+01

1E+01

0.5

3E+00

1E+00

3E-01

1E-01

3E-02

1E-02

0.2

0.1

0.05

0.02

D =

Tmb /

100

120

140

1E-07

1E-05

1E-03

t / s

1E-01

1E+01

Fig.2. Normalised continuous drain current.

ID% = 100 I_D/I_{D 25 ˚C}= f(T_sp); conditions: V_GS≥ 10 V

Fig.4. Transient thermal impedance.

Z_{th j-sp}= f(t); parameter D = t_p/T

January 1998

Rev 1.000

Philips Semiconductors

Product specification

TrenchMOS transistor

Standard level FET

BUK7840-55

gfs/S

VGS/V =

6.0

8.0

6.5

ID/A

5.5

5.0

4.5

4.0

10 11 12 13 14 15 16 17 18 19 20

ID/A

Fig.5. Typical output characteristics, T_j= 25 ˚C.

I_D= f(V_DS); parameter V_GS

Fig.8. Typical transconductance, T_j= 25 ˚C.

g_fs= f(I_D); conditions: V_DS= 25 V

RDS(ON)/mOhm

BUK98XX-55

Rds(on) normalised to 25degC

2.5

VGS/V =

5.5

6.5

1.5

0.5

-100

-50

100

150

200

ID/A

Tmb / degC

Fig.6. Typical on-state resistance, T_j= 25 ˚C.

R_DS(ON)= f(I_D); parameter V_GS

Fig.9. Normalised drain-source on-state resistance.

a = R_DS(ON)/R_{DS(ON)25 ˚C}= f(T_j); I_D= 5 A; V_GS= 10 V

BUK78xx-55

VGS(TO) / V

ID/A

max.

typ.

min.

Tj/C = 150

-100

-50

100

150

200

VGS/V

Tj / C

Fig.7. Typical transfer characteristics.

I_D= f(V_GS) ; conditions: V_DS= 25 V; parameter T_j

Fig.10. Gate threshold voltage.

V_GS(TO)= f(T_j); conditions: I_D= 1 mA; V_DS= V_GS

January 1998

Rev 1.000

Philips Semiconductors

Product specification

TrenchMOS transistor

Standard level FET

BUK7840-55

IF/A

Sub-Threshold Conduction

1E-01

1E-02

1E-03

1E-04

1E-05

1E-06

Tj/C =

150

typ

98%

0.2

0.4

0.6

0.8

1.2

1.4

VSDS/V

Fig.11. Sub-threshold drain current.

I_D= f(V_GS); conditions: T_j= 25 ˚C; V_DS= V_GS

Fig.14. Typical reverse diode current.

I_F= f(V_SDS); conditions: V_GS= 0 V; parameter T_j

1.4

1.2

1.0

0.8

0.6

0.4

0.2

WDSS%

120

110

100

Ciss

ThouandspF

Coss

Crss

Tmb /

100

120

140

0.01

0.1

100

VDS/V

Fig.12. Typical capacitances, C_iss, C_oss, C_rss.

C = f(V_DS); conditions: V_GS= 0 V; f = 1 MHz

Fig.15. Normalised avalanche energy rating.

W_DSS% = f(T_sp); conditions: I_D= 3.6 A

VGS/V

VDD

VDS

VDS = 14V

VDS = 44V

VGS

-ID/100

T.U.T.

R 01

RGS

shunt

QG/NC

Fig.16. Avalanche energy test circuit.

W_DSS= 0.5 LI_D²BV_DSS/(BV_DSS− V_DD

Fig.13. Typical turn-on gate-charge characteristics.

V_GS= f(Q_G); conditions: I_D= 9 A; parameter V_DS

)

January 1998

Rev 1.000

Philips Semiconductors

Product specification

TrenchMOS transistor

Standard level FET

BUK7840-55

VDD

VDS

VGS

T.U.T.

Fig.17. Switching test circuit.

January 1998

Rev 1.000

Philips Semiconductors

Product specification

TrenchMOS transistor

Standard level FET

BUK7840-55

PRINTED CIRCUIT BOARD

Dimensions in mm.

4.5

4.6

Fig.18. PCB for thermal resistance and power rating for SOT223.

PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 µm thick).

January 1998

Rev 1.000

Philips Semiconductors

Product specification

TrenchMOS transistor

Standard level FET

BUK7840-55

MECHANICAL DATA

Dimensions in mm

Net Mass: 0.11 g

6.7

6.3

3.1

2.9

0.32

0.24

0.2

0.10

0.02

7.3

6.7

3.7

3.3

max

1.05

0.85

0.80

0.60

2.3

1.8

max

0.1

(4x)

4.6

Fig.19. SOT223 surface mounting package.

Notes

1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent

damage to MOS gate oxide.

2. Refer to surface mounting instructions for SOT223 envelope.

3. Epoxy meets UL94 V0 at 1/8".

January 1998

Rev 1.000

Philips Semiconductors

Product specification

TrenchMOS transistor

Standard level FET

BUK7840-55

DEFINITIONS

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and

operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 1998

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the

The information presented in this document does not form part of any quotation or contract, it is believed to be

accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under patent or other

industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these

products can be reasonably expected to result in personal injury. Philips customers using or selling these products

for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting

from such improper use or sale.

January 1998

Rev 1.000

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