BUK7C06-40AITE/T3 [NXP]
TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,155A I(D),SOT-427;
| 型号： | BUK7C06-40AITE/T3 |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,155A I(D),SOT-427 |
| 文件： | 总14页 (文件大小：187K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUK7C06-40AITE
N-channel TrenchPLUS standard level FET
Rev. 05 — 16 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS current sensing
and diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
Allows responsive temperature
monitoring due to integrated
temperature sensor
Low conduction losses due to low
on-state resistance
Q101 compliant
Electrostatically robust due to
Reduced component count due to
integrated protection diodes
integrated current sensor
1.3 Applications
Automotive and general purpose
Fan control
power switching
Variable valve timing for engines
Electrical Power Assisted Steering
(EPAS)
1.4 Quick reference data
Table 1.
Symbol
VDS
Quick reference
Parameter
Conditions
Min
Typ
Max
40
Unit
V
drain-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
-
-
-
-
ID
VGS = 10 V; Tmb = 25 °C; see Figure 2; [1]
see Figure 3
155
A
Static characteristics
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 50 A; Tj = 25 °C; see
Figure 7; see Figure 8
-
4.7
6
mΩ
ID/Isense
SF(TSD)
VF(TSD)
ratio of drain current to
sense current
Tj > -55 °C; Tj < 175 °C; VGS = 10 V
585
-1.4
648
615
-1.54
658
645
-1.68
668
temperature sense diode IF = 250 µA; Tj > -55 °C; Tj < 175 °C
temperature coefficient
mV/K
mV
temperature sense diode IF = 250 µA; Tj = 25 °C
forward voltage
[1] Current is limited by power dissipation chip rating.
BUK7C06-40AITE
NXP Semiconductors
N-channel TrenchPLUS standard level FET
2. Pinning information
Table 2.
Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
G
gate
mb
D
A
2
ISENSE Current sense
3
A
anode
4
D
drain
G
5
K
cathode
Kelvin source
source
4
6
KS
S
1 2 3 5 6 7
7
SOT427
(D2PAK)
I
sense
S
K
mb
D
mounting base; connected to
drain
Kelvin source
sym110
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BUK7C06-40AITE D2PAK
plastic single-ended surface-mounted package (D2PAK); 7 leads (one
lead cropped)
SOT427
BUK7C06-40AITE_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 16 February 2009
2 of 14
BUK7C06-40AITE
NXP Semiconductors
N-channel TrenchPLUS standard level FET
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
40
Unit
V
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
RGS = 20 kΩ
-
VDGR
VGS
-
40
V
-20
20
V
ID
Tmb = 25 °C; VGS = 10 V; see Figure 2; see Figure 3 [1]
[2]
-
155
75
A
-
A
Tmb = 100 °C; VGS = 10 V; see Figure 2
[2]
-
75
A
IDM
peak drain current
Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3
-
620
272
10
A
Ptot
total power dissipation Tmb = 25 °C; see Figure 1
-
W
mA
mA
V
IGS(CL)
gate-source clamping
current
continuous
-
pulsed; tp = 5 ms; δ = 0.01
-
50
Visol(FET-TS FET to temperature
-100
100
sense diode isolation
D)
voltage
Tstg
Tj
storage temperature
junction temperature
-55
-55
175
175
°C
°C
Source-drain diode
IS
source current
Tmb = 25 °C
[1]
[2]
-
-
-
155
75
A
A
A
ISM
peak source current
tp ≤ 10 µs; pulsed; Tmb = 25 °C
ID = 75 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V;
620
Avalanche ruggedness
EDS(AL)S non-repetitive
-
1.46
6
J
drain-source avalanche Tj(init) = 25 °C; unclamped
energy
Electrostatic discharge
Vesd
electrostatic discharge HBM; C = 100 pF; R = 1.5 kΩ
voltage
-
kV
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
BUK7C06-40AITE_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 16 February 2009
3 of 14
BUK7C06-40AITE
NXP Semiconductors
N-channel TrenchPLUS standard level FET
03na19
03ng16
120
160
I
D
P
(%)
der
(A)
120
80
80
40
0
capped at 75A
due to package
40
0
0
50
100
150
200
0
50
100
150
200
T
mb
(°C)
T
mb
(°C)
Fig 2. Continuous drain current as a function of
mounting base temperature
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
03ni28
3
10
Limit R
= V /I
DS D
I
DSon
D
t
= 10 µs
p
(A)
100 µs
1 ms
2
10
capped at 75 A due to package
DC
10 ms
10
100 ms
1
2
1
10
10
V
DS
(V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7C06-40AITE_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 16 February 2009
4 of 14
BUK7C06-40AITE
NXP Semiconductors
N-channel TrenchPLUS standard level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from
junction to ambient
mounted on printed-circuit board;
minimum footprint
-
-
50
K/W
Rth(j-mb)
thermal resistance from
junction to mounting base
see Figure 4
-
-
0.55
K/W
03ni29
1
Z
th(j-mb)
δ = 0.5
(K/W)
0.2
−1
10
10
10
0.1
0.05
0.02
t
p
−2
P
δ =
T
single shot
t
t
p
T
−3
10
−6
−5
−4
−3
−2
−1
10
10
10
10
10
1
10
t
(s)
p
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7C06-40AITE_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 16 February 2009
5 of 14
BUK7C06-40AITE
NXP Semiconductors
N-channel TrenchPLUS standard level FET
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
40
36
2
-
-
V
V
V
-
-
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
3
4
voltage
see Figure 9
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 9
1
-
-
-
-
V
V
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 9
4.4
IDSS
drain leakage current
VDS = 40 V; VGS = 0 V; Tj = 25 °C
VDS = 40 V; VGS = 0 V; Tj = 175 °C
-
0.1
-
10
250
-
µA
µA
V
-
V(BR)GSS
gate-sourcebreakdown IG = 1 mA; VDS = 0 V; Tj > -55 °C;
20
22
voltage
Tj < 175 °C
IG = -1 mA; VDS = 0 V; Tj > -55 °C;
Tj < 175 °C
20
22
-
V
IGSS
gate leakage current
VDS = 0 V; VGS = 10 V; Tj = 25 °C
VDS = 0 V; VGS = -10 V; Tj = 25 °C
VDS = 0 V; VGS = 10 V; Tj = 175 °C
VDS = 0 V; VGS = -10 V; Tj = 175 °C
-
-
-
-
-
22
22
-
1000
1000
10
nA
nA
µA
µA
mΩ
-
10
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 50 A; Tj = 25 °C;
see Figure 7; see Figure 8
4.7
6
VGS = 10 V; ID = 50 A; Tj = 175 °C;
see Figure 7; see Figure 8
-
-
11.4
668
mΩ
VF(TSD)
SF(TSD)
temperature sense
diode forward voltage
IF = 250 µA; Tj = 25 °C
648
-1.4
658
-1.54
mV
temperature sense
diode temperature
coefficient
IF = 250 µA; Tj > -55 °C; Tj < 175 °C
-1.68
mV/K
VF(TSD)hys temperature sense
diode forward voltage
hysteresis
IF > 125 µA; IF < 250 µA; Tj = 25 °C
25
32
50
mV
ID/Isense
ratio of drain current to VGS = 10 V; Tj > -55 °C; Tj < 175 °C
sense current
585
615
645
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
ID = 25 A; VDS = 32 V; VGS = 10 V;
Tj = 25 °C; see Figure 14
-
-
-
-
-
-
120
19
-
-
-
-
-
-
nC
nC
nC
pF
pF
pF
50
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 12
4300
1400
820
Coss
Crss
reverse transfer
capacitance
BUK7C06-40AITE_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 16 February 2009
6 of 14
BUK7C06-40AITE
NXP Semiconductors
N-channel TrenchPLUS standard level FET
Table 6.
Symbol
td(on)
tr
Characteristics …continued
Parameter
Conditions
Min
Typ
35
Max
Unit
ns
turn-on delay time
rise time
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 10 Ω; Tj = 25 °C
-
-
-
-
-
-
-
-
-
-
115
155
110
2.5
ns
td(off)
tf
turn-off delay time
fall time
ns
ns
LD
internal drain
inductance
measured from upper edge of drain
mounting base to centre of die; Tj = 25 °C
nH
LS
internal source
inductance
measured from source lead to source
bond pad; Tj = 25 °C
-
-
7.5
-
nH
V
Source-drain diode
VSD
source-drain voltage
IS = 40 A; VGS = 0 V; Tj = 25 °C;
see Figure 18
0.85
1.2
trr
reverse recovery time
recovered charge
IS = 20 A; dIS/dt = -100 A/µs; VGS = -10 V;
VDS = 30 V; Tj = 25 °C
-
-
96
-
-
ns
Qr
224
nC
03ni21
03ni22
300
18
7.5
7.0
8.0
10.0
20.0
Label is V (V)
GS
I
R
DSon
(mΩ)
D
(A)
6.5
6.0
200
12
5.5
5.0
100
6
0
4.5
4.0
0
0
2
4
6
8
10
(V)
4
8
12
16
20
V
DS
V
(V)
GS
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values
BUK7C06-40AITE_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 16 February 2009
7 of 14
BUK7C06-40AITE
NXP Semiconductors
N-channel TrenchPLUS standard level FET
03ni23
03ni30
12
2.0
1.6
1.2
0.8
0.4
0
Label is V (V)
GS
R
a
DSon
(mΩ)
5.5
10
6.0
8
6
4
2
7.0
8.0
9.0
10.0
0
40
80
120
−60
0
60
120
180
I
D
(A)
T (°C)
j
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
03aa32
03aa35
−1
5
10
I
V
D
GS(th)
(V)
(A)
min
typ
max
−2
−3
−4
−5
−6
4
10
10
10
10
10
max
3
typ
2
min
1
0
−60
0
60
120
180
0
2
4
6
T (°C)
j
V
GS
(V)
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
Fig 9. Gate-source threshold voltage as a function of
junction temperature
BUK7C06-40AITE_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 16 February 2009
8 of 14
BUK7C06-40AITE
NXP Semiconductors
N-channel TrenchPLUS standard level FET
03ni24
03ne67
80
8
6
4
2
g
fs
C
(nF)
(S)
60
C
iss
40
20
0
C
C
oss
rss
0
10
−1
2
0
25
50
75
100
1
10
10
I
D
(A)
V
DS
(V)
Fig 11. Forward transconductance as a function of
drain current; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
03ni25
03ni26
100
10
V
(V)
GS
I
D
(A)
8
6
4
2
0
75
V
= 14 V
32 V
DS
50
25
0
T = 175 °C
25 °C
j
0
2
4
6
0
40
80
120
V
(V)
Q (nC)
G
GS
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values
BUK7C06-40AITE_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 16 February 2009
9 of 14
BUK7C06-40AITE
NXP Semiconductors
N-channel TrenchPLUS standard level FET
03ne84
03ne85
700
−1.70
max
V
F
S
F
(mV)
(mV/K)
600
−1.60
typ
500
400
−1.50
−1.40
min
0
50
100
150
200
645
655
665
675
T (°C)
j
V (mV)
F
Fig 16. Temperature coefficient of temperature sense
diode as a function of forward voltage; typical
values
Fig 15. Forward voltage of temperature sense diode as
a function of junction temperature; typical
values
003aab048
03ni27
800
100
I
I /I
S
D
sense
(A)
700
75
T = 175 °C
j
25 °C
600
500
400
50
25
0
4
8
12
16
20
0
0.4
0.8
1.2
V
(V)
V
SD
(V)
GS
Fig 17. Drain-sense current ratio as a function of gate
voltage; typical values
Fig 18. Source current as a function of source-drain
voltage; typical values
BUK7C06-40AITE_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 16 February 2009
10 of 14
BUK7C06-40AITE
NXP Semiconductors
N-channel TrenchPLUS standard level FET
7. Package outline
Plastic single-ended surface-mounted package (D2PAK); 7 leads (one lead cropped)
SOT427
A
A
E
1
D
1
mounting
base
D
H
D
4
L
p
1
7
b
c
e
e
e
e
e
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
D
A
A
L
H
Q
UNIT
b
c
D
E
e
1
p
D
1
max.
1.40
1.27
4.50
4.10
0.85
0.60
0.64
0.46
2.90 15.80 2.60
2.10 14.80 2.20
1.60 10.30
1.20 9.70
mm
11
1.27
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
05-03-09
06-03-16
SOT427
Fig 19. Package outline SOT427 (D2PAK)
BUK7C06-40AITE_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 16 February 2009
11 of 14
BUK7C06-40AITE
NXP Semiconductors
N-channel TrenchPLUS standard level FET
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BUK7C06-40AITE_5
Modifications:
20090216
Product data sheet
-
BUK7C06-40AITE_4
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
BUK7C06-40AITE_4
20050623
Product data sheet
-
BUK7C06-40AITE_3
BUK7C06-40AITE_3
(9397 750 15176)
20050616
Product data sheet
-
BUK7C06_40AITE-02
BUK7C06_40AITE-02
(9397 750 12487)
20040129
20020717
Product data sheet
Product data sheet
-
-
BUK7C06_40AITE-01
-
BUK7C06_40AITE-01
(9397 750 09873)
BUK7C06-40AITE_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 16 February 2009
12 of 14
BUK7C06-40AITE
NXP Semiconductors
N-channel TrenchPLUS standard level FET
9. Legal information
9.1 Data sheet status
Document status [1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
Applications — Applications that are described herein for any of these
9.2 Definitions
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
9.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
TrenchMOS — is a trademark of NXP B.V.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BUK7C06-40AITE_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 16 February 2009
13 of 14
BUK7C06-40AITE
NXP Semiconductors
N-channel TrenchPLUS standard level FET
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .12
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
9.1
9.2
9.3
9.4
10
Contact information. . . . . . . . . . . . . . . . . . . . . .13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: Rev. 05 — 16 February 2009
Document identifier: BUK7C06-40AITE_5
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