BUK7C08-55AITE_技术文档

BUK7C08-55AITE

TrenchPLUS standard level FET

M3D323

Rev. 01 — 19 August 2003

Product data

1. Product proﬁle

1.1 Description

N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using

TrenchMOS™ technology, featuring very low on-state resistance and including

TrenchPLUS current sensing, and diodes for ESD and overtemperature protection.

Product availability:

BUK7C08-55AITE in SOT427 (D²-PAK).

1.2 Features

■ Q101 compliant

■ ESD protection

■ Integrated temperature sensor

■ Integrated current sensor.

1.3 Applications

■ Variable Valve Timing for engines

■ Automotive and power switching

■ Electrical Power Assisted Steering

■ Fan control.

1.4 Quick reference data

■ V_DS≤ 55 V

■ I_D≤ 130 A

■ R_DSon= 6.8 mΩ (typ)

■ V_F= 658 mV (typ)

■ S_F= −1.54 mV/K (typ)

■ I_D/I_sense= 500 (typ).

2. Pinning information

Table 1:

Pinning - SOT427, simpliﬁed outline and symbol

Description

gate (g)

5

Description

cathode (k)

Kelvin source

source (s)

Simpliﬁed outline

Symbol

1

a

d

mb

2

I_sense

6

3

anode (a)

drain (d)

7

g

4

2

4

6

5 7

1

3

mb

mounting base;

connected to

drain (d)

s

k

I

MBL362

sense

Kelvin source

Front view

MBK128

SOT427 (D²-PAK)

BUK7C08-55AITE

Philips Semiconductors

TrenchPLUS standard level FET

3. Limiting values

Table 2: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_DS

Parameter

Conditions

Min

Max

55

Unit

V

drain-source voltage (DC)

drain-gate voltage (DC)

gate-source voltage (DC)

drain current (DC)

-

V_DGR

V_GS

R_GS= 20 kΩ

55

V

±20

130

75

V

[1]

[2]

I_D

T_mb= 25 °C; V_GS= 10 V;

Figure 2 and 3

A

T_mb= 100 °C; V_GS= 10 V; Figure 2

75

A

I_DM

peak drain current

T_mb= 25 °C; pulsed; t_p≤ 10 µs;

522

A

Figure 3

P_tot

total power dissipation

T_mb= 25 °C; Figure 1

continuous

-

272

10

W

I_GS(CL)

gate-source clamping current

mA

V

t_p= 5 ms; δ = 0.01

50

V_{isol(FET-TSD)}FET to temperature sense diode

isolation voltage

±100

T_stg

T_j

storage temperature

junction temperature

−55

+175

°C

Source-drain diode

[1]

[2]

I_DR

reverse drain current (DC)

T_mb= 25 °C

-

130

75

A

I_DRM

peak reverse drain current

T_mb= 25 °C; pulsed; t_p≤ 10 µs

unclamped inductive load; I_D= 75 A;

522

Avalanche ruggedness

E_DS(AL)S

non-repetitive avalanche energy

-

460

6

mJ

V_DS≤ 55 V; V_GS= 10 V;

R_GS= 50 Ω; starting T_j= 25 °C

Electrostatic discharge

V_esd

electrostatic discharge voltage, pins Human Body Model; C = 100 pF;

-

kV

1,2,4,6,7

R = 1.5 kΩ

[1] Current is limited by power dissipation chip rating.

[2] Continuous current is limited by package.

9397 750 11696

Product data

Rev. 01 — 19 August 2003

2 of 15

BUK7C08-55AITE

Philips Semiconductors

TrenchPLUS standard level FET

03na19

03no05

120

150

I

D

P

der

(%)

(A)

80

40

0

100

50

Capped at 75A due to package

0

50

100

150

200

(°C)

0

50

100

150

200

T ( C)

T

°

j

mb

P_tot

P_der

=

× 100%

-----------------------

V_GS≥ 10 V

P

°

tot(25 C)

Fig 1. Normalized total power dissipation as a

function of mounting base temperature.

Fig 2. Continuous drain current as a function of

mounting base temperature.

03nh48

3

10

I

D

R

= V

/ I

DS D

DSon

(A)

t

= 10 µs

p

2

10

1

100 µs

1 ms

Capped at 75 A due to package

DC

10 ms

100 ms

2

10

1

10

V

(V)

DS

T_mb= 25 °C; I_DMsingle pulse.

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

9397 750 11696

Product data

Rev. 01 — 19 August 2003

3 of 15

BUK7C08-55AITE

Philips Semiconductors

TrenchPLUS standard level FET

4. Thermal characteristics

Table 3:

Symbol Parameter

R_th(j-a)thermal resistance from junction to

ambient

Thermal characteristics

Conditions

Min

Typ

Max Unit

50 K/W

mounted on printed circuit board;

minimum footprint

-

R_th(j-mb)thermal resistance from junction to

mounting base

Figure 4

-

0.55 K/W

4.1 Transient thermal impedance

03ni29

1

δ

-1

10

-2

-3

t

p

P

δ =

T

t

p

T

-6

10

-5

10

-4

10

-3

10

-2

10

-1

10

1

10

t

p

(s)

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.

9397 750 11696

Product data

Rev. 01 — 19 August 2003

4 of 15

BUK7C08-55AITE

Philips Semiconductors

TrenchPLUS standard level FET

5. Characteristics

Table 4: Characteristics

T_j= 25 °C unless otherwise speciﬁed.

Symbol

Static characteristics

V_(BR)DSSdrain-source breakdown

voltage

Parameter

Conditions

Min

Typ

Max

Unit

I_D= 0.25 mA; V_GS= 0 V

T_j= 25 °C

55

50

-

V

T_j= −55 °C

V_GS(th)

gate-source threshold voltage I_D= 1 mA; V_DS= V_GS

Figure 9

T_j= 25 °C

;

2

1

-

3

-

4

V

T_j= 175 °C

T_j= −55 °C

-

4.4

I_DSS

drain-source leakage current V_DS= 40 V; V_GS= 0 V

T_j= 25 °C

-

0.1

-

10

250

-

µA

V

T_j= 175 °C

-

V_(BR)GSS

I_GSS

gate-source breakdown

voltage

I_G= ±1 mA;

20

22

−55 °C < T_j< +175 °C

gate-source leakage current V_GS= ±10 V; V_DS= 0 V

T_j= 25 °C

-

22

-

1000

10

nA

T_j= 175 °C

µA

R_DSon

drain-source on-state

resistance

V_GS= 10 V; I_D= 50 A;

Figure 7 and 8

T_j= 25 °C

-

6.8

-

8

mΩ

T_j= 175 °C

16

R_D(Is)on

drain-I_senseon-state

resistance

V_GS= 10 V; I_D= 25 mA;

Figure 18

T_j= 25 °C

T_j= 175 °C

I_F= 250 µA

1.32

3.04

648

1.55

3.57

658

1.82

4.19

668

Ω

V_F

forward voltage temperature

sense diode

mV

S_F

temperature coefﬁcient

temperature sense diode

I_F= 250 µA;

−55 °C < T_j< +175 °C

−1.4

25

−1.54

32

−1.68

50

mV/K

mV

-

V_hys

I_D/I_sense

forward voltage hysteresis

temperature sense diode

125 µA < I_F< 250 µA

ratio of drain current to sense V_GS> 5 V;

current −55 °C < T_j< +175 °C

Dynamic characteristics

450

500

550

Q_g(tot)

Q_gs

total gate charge

V_GS= 10 V; V_DS= 44 V;

I_D= 25 A; Figure 14

-

116

19

-

nC

pF

gate-source charge

gate-drain (Miller) charge

input capacitance

Q_gd

51

C_iss

V_GS= 0 V; V_DS= 25 V;

f = 1 MHz; Figure 12

4200

920

500

C_oss

C_rss

output capacitance

reverse transfer capacitance

9397 750 11696

Product data

Rev. 01 — 19 August 2003

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BUK7C08-55AITE

Philips Semiconductors

TrenchPLUS standard level FET

Table 4: Characteristics…continued

T_j= 25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

35

Max

Unit

nS

t_d(on)

t_r

t_d(off)

t_f

turn-on delay time

rise time

V_DD= 30 V; R_L= 1.2 Ω;

V_GS= 10 V; R_G= 10 Ω

-

115

155

110

2.5

nS

turn-off delay time

fall time

nS

L_d

internal drain inductance

measured from upper edge

of drain mounting base to

centre of die

nH

L_s

internal source inductance

measured from source lead

to source bond pad; lead

length 6 mm

-

7.5

-

nH

V

Source-drain diode

V_SD

source-drain (diode forward) I_S= 40 A; V_GS= 0 V;

-

0.85

1.2

voltage

Figure 19

t_rr

reverse recovery time

recovered charge

I_S= 20 A; dI_S/dt = −100 A/µs

V_GS= −10 V; V_DS= 30 V

-

80

-

ns

Q_r

200

nC

9397 750 11696

Product data

Rev. 01 — 19 August 2003

6 of 15

BUK7C08-55AITE

Philips Semiconductors

TrenchPLUS standard level FET

03nn97

03nn99

400

14

10

R

DSon

Label is V

(V)

9

I

GS

D

8

(m

)

Ω

(A)

12

10

8

7.5

7

300

20

6.5

6

200

100

0

5.5

5

6

4.5

4

0

2

4

6

8

10

(V)

4

8

12

16

20

(V)

V

GS

V

DS

T_j= 25 °C; t_p= 300 µs

T_j= 25 °C; I_D= 50 A

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values.

Fig 6. Drain-source on-state resistance as a function

of gate-source voltage; typical values.

03nn98

03ne89

2

20

Label is V

8

(V)

R

GS

DSon

(m

a

6.5

7

)

Ω

6

5.5

7.5

1.5

16

12

8

1

0.5

0

10

20

4

-60

0

60

120

180

0

100

200

300

400

(A)

I

D

T ( C)

°

j

T_j= 25 °C; t_p= 300 µs

R_DSon

a =

----------------------------

R_{DSon(25 C)}

°

Fig 7. Drain-source on-state resistance as a function

of drain current; typical values.

Fig 8. Normalized drain-source on-state resistance

factor as a function of junction temperature.

9397 750 11696

Product data

Rev. 01 — 19 August 2003

7 of 15

BUK7C08-55AITE

Philips Semiconductors

TrenchPLUS standard level FET

03aa32

03aa35

-1

-2

-3

-4

-5

-6

5

10

I

V

D

(A)

GS(th)

(V)

4

10

max

typ

min

typ

max

3

2

1

0

10

min

-60

0

60

120

180

0

2

4

6

°

T ( C)

V

(V)

j

GS

I_D= 1 mA; V_DS= V_GS

T_j= 25 °C; V_DS= V_GS

Fig 9. Gate-source threshold voltage as a function of

junction temperature.

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

03ni69

03no00

8000

80

C

(pF)

g

fs

(S)

C

6000

4000

2000

0

iss

60

C

40

20

0

oss

C

rss

-2

-1

2

10

1

10

V

(V)

0

25

50

75

100

(A)

DS

I

D

T_j= 25 °C; V_DS= 25 V

V_GS= 0 V; f = 1 MHz

Fig 11. Forward transconductance as a function of

drain current; typical values.

Fig 12. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values.

9397 750 11696

Product data

Rev. 01 — 19 August 2003

8 of 15

BUK7C08-55AITE

Philips Semiconductors

TrenchPLUS standard level FET

03nf25

03no01

10

GS

(V)

100

V

I

D

(A)

8

6

4

2

0

75

V

= 14 V

DS

V

= 44 V

DS

50

25

0

175 C

°

T = 25 C

°

j

0

40

80

120

0

2

4

6

8

Q

(nC)

G

V

(V)

GS

V_DS= 25 V

T_j= 25 °C; I_D= 25 A

Fig 13. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

Fig 14. Gate-source voltage as a function of gate

charge; typical values.

03ne84

1.70

700

-S

F

V

F

(mV/K)

max

(mV)

1.65

1.60

600

typ

1.55

500

400

1.50

1.45

min

1.40

0

50

100

150

200

645

650

655

660

665

670

V

675

(mV)

T (ºC)

j

F

I_F= 250 µA

V_Fat T_j= 25 °C; I_F= 250 µA

Fig 15. Forward voltage of temperature sense diode as

a function of junction temperature; typical

values.

Fig 16. Temperature coefﬁcient of temperature sense

diode as a function of forward voltage; typical

values.

9397 750 11696

Product data

Rev. 01 — 19 August 2003

9 of 15

BUK7C08-55AITE

Philips Semiconductors

TrenchPLUS standard level FET

03no04

03no03

600

8

R

D(Is)on

I

/I

D sense

(m )

Ω

550

6

500

450

400

4

2

0

4

8

12

16

20

4

8

12

16

20

V

(V)

V

(V)

GS

I_D= 25 A

I_sense= 25 mA

Fig 17. Drain-sense current ratio as a function of gate

voltage; typical values.

Fig 18. R_D(Is)onas function of gate-source voltage;

typical values.

03no02

100

I

D

(A)

75

50

25

0

175 C

°

T = 25 C

°

j

0

0.5

1

1.5

V

(V)

SD

V_GS= 0 V

Fig 19. Reverse diode current as a function of reverse diode voltage; typical values.

9397 750 11696

Product data

Rev. 01 — 19 August 2003

10 of 15

BUK7C08-55AITE

Philips Semiconductors

TrenchPLUS standard level FET

6. Package outline

2

Plastic single-ended surface mounted package (Philips version of D -PAK);

7 leads (one lead cropped)

SOT427

A

E

1

D

1

mounting

base

D

H

D

4

L

p

1

7

b

c

e

Q

0

2.5

5 mm

scale

DIMENSIONS (mm are the original dimensions)

D

A

L

H

Q

UNIT

b

c

D

E

e

1

p

D

1

max.

1.40

1.27

4.50

4.10

0.85

0.60

0.64

0.46

2.90 15.80 2.60

2.10 14.80 2.20

1.60 10.30

1.20 9.70

mm

11

1.27

REFERENCES

JEDEC

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

EIAJ

99-06-25

01-04-18

SOT427

Fig 20. SOT427 (D²-PAK).

9397 750 11696

Product data

Rev. 01 — 19 August 2003

11 of 15

BUK7C08-55AITE

Philips Semiconductors

TrenchPLUS standard level FET

7. Soldering

handbook, full pagewidth

10.85

10.60

10.50

1.50

7.50

7.40

1.70

2.15

1.50

2.25

8.275

8.35

8.15

4.60

0.30

4.85

5.40

7.95

8.075

3.00

0.20

0.70

0.80

solder lands

solder resist

occupied area

solder paste

1.27

(4×)

2.54

8.92

MSD059

Dimensions in mm.

Fig 21. Reﬂow soldering footprint for SOT427.

9397 750 11696

Product data

Rev. 01 — 19 August 2003

12 of 15

BUK7C08-55AITE

Philips Semiconductors

TrenchPLUS standard level FET

8. Revision history

Table 5:

Revision history

CPCN

Rev Date

Description

01 20030819

-

Product data; initial version (9397 750 11696)

9397 750 11696

Product data

Rev. 01 — 19 August 2003

13 of 15

BUK7C08-55AITE

Philips Semiconductors

TrenchPLUS standard level FET

9. Data sheet status

Level Data sheet status^[1]

Product status^[2][3]

Deﬁnition

I

Objective data

Development

This data sheet contains data from the objective speciﬁcation for product development. Philips

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

II

Preliminary data

Qualiﬁcation

This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published

at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in

order to improve the design and supply the best possible product.

III

Product data

Production

This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

right to make changes at any time in order to improve the design, manufacturing and supply. Relevant

changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

[1]

[2]

Please consult the most recently issued data sheet before initiating or completing a design.

The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3]

For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

customers using or selling these products for use in such applications do so

at their own risk and agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

10. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook.

Right to make changes — Philips Semiconductors reserves the right to

make changes in the products - including circuits, standard cells, and/or

software - described or contained herein in order to improve design and/or

performance. When the product is in full production (status ‘Production’),

relevant changes will be communicated via a Customer Product/Process

Change Notiﬁcation (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these products, conveys no

licence or title under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that these products are

free from patent, copyright, or mask work right infringement, unless otherwise

speciﬁed.

Limiting values deﬁnition — Limiting values given are in accordance with

the Absolute Maximum Rating System (IEC 60134). Stress above one or

more of the limiting values may cause permanent damage to the device.

These are stress ratings only and operation of the device at these or at any

other conditions above those given in the Characteristics sections of the

speciﬁcation is not implied. Exposure to limiting values for extended periods

may affect device reliability.

Application information — Applications that are described herein for any

of these products are for illustrative purposes only. Philips Semiconductors

make no representation or warranty that such applications will be suitable for

the speciﬁed use without further testing or modiﬁcation.

12. Trademarks

TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.

11. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips Semiconductors

Contact information

For additional information, please visit http://www.semiconductors.philips.com.

For sales ofﬁce addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.

Fax: +31 40 27 24825

14 of 15

9397 750 11696

Product data

Rev. 01 — 19 August 2003

BUK7C08-55AITE

Philips Semiconductors

TrenchPLUS standard level FET

Contents

1

Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

1.1

1.2

1.3

1.4

2

Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

Transient thermal impedance . . . . . . . . . . . . . . 4

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11

Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13

Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 14

Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

3

4

4.1

5

6

7

8

9

10

11

12

Printed in The Netherlands

All rights are reserved. Reproduction in whole or in part is prohibited without the prior

written consent of the copyright owner.

The information presented in this document does not form part of any quotation or

contract, is believed to be accurate and reliable and may be changed without notice. No

liability will be accepted by the publisher for any consequence of its use. Publication

thereof does not convey nor imply any license under patent- or other industrial or

intellectual property rights.

Date of release: 19 August 2003

Document order number: 9397 750 11696


型号：	BUK7C08-55AITE
厂家：	NXP
描述：	TrenchPLUS standard level FET TrenchPLUS标准水平FET
文件：	总15页 (文件大小：315K)
中文：	中文翻译
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