BUK7E07-55B,127_技术文档

BUK7E07-55B

N-channel TrenchMOS standard level FET

Rev. 01 — 29 January 2008

Product data sheet

1. Product proﬁle

1.1 General description

N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package

using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has

been designed and qualiﬁed to the appropriate AEC standard for use in Automotive critical

applications.

1.2 Features

I Very low on-state resistance

I Q101 compliant

I 175 °C rated

I Standard level compatible

1.3 Applications

I Automotive systems

I General purpose power switching

I 12 V and 24 V loads

I Motors, lamps and solenoids

1.4 Quick reference data

I E_DS(AL)S≤ 351 mJ

I I_D≤ 75 A

I R_DSon= 5.8 mΩ (typ)

I P_tot≤ 203 W

2. Pinning information

Table 1.

Pinning

1

Description

Simpliﬁed outline

Symbol

gate (G)

mb

D

2

drain (D)

3

source (S)

G

mb

mounting base; connected to drain (D)

mbb076

S

1

2 3

SOT226 (I2PAK)

BUK7E07-55B

NXP Semiconductors

N-channel TrenchMOS standard level FET

3. Ordering information

Table 2.

Ordering information

Type number

Package

Name

Description

Version

BUK7E07-55B

I2PAK

plastic single-ended package (I2PAK); low-proﬁle 3-lead TO-220AB SOT226

4. Limiting values

Table 3.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min Max Unit

V_DS

V_DGR

V_GS

I_D

drain-source voltage

-

55

V

A

W

drain-gate voltage (DC)

gate-source voltage

drain current

R_GS= 20 kΩ

55

±20

119

75

[1]

[2]

T_mb= 25 °C; V_GS= 10 V; see Figure 2 and 3

T_mb= 100 °C; V_GS= 10 V; see Figure 2

T_mb= 25 °C; pulsed; t_p≤ 10 µs; see Figure 3

T_mb= 25 °C; see Figure 1

-

75

I_DM

P_tot

T_stg

T_j

peak drain current

478

203

total power dissipation

storage temperature

junction temperature

−55 +175 °C

Source-drain diode

[2]

I_DR

reverse drain current

peak reverse drain current

T_mb= 25 °C

-

75

A

I_DRM

T_mb= 25 °C; pulsed; t_p≤ 10 µs

478

Avalanche ruggedness

E_DS(AL)Snon-repetitive drain-source avalanche Unclamped inductive load; I_D= 75 A;

-

351

-

mJ

J

energy

V_DS≤ 55 V; V_GS= 10 V; R_GS= 50 Ω; starting at

T_j= 25 °C

[3]

E_DS(AL)Rrepetitive drain-source avalanche

energy

Repetitive rating deﬁned in Figure 16

[1] Current is limited by chip power dissipation rating.

[2] Continuous current is limited by package.

[3] Conditions:

a) Maximum value not quoted.

b) Single-pulse avalanche rating limited by T_j(max)of 175 °C.

c) Repetitive avalanche rating limited by an average junction temperature of 170 °C.

d) Refer to application note AN10273 for further information.

BUK7E07-55B_1

Product data sheet

Rev. 01 — 29 January 2008

2 of 12

BUK7E07-55B

NXP Semiconductors

N-channel TrenchMOS standard level FET

003aab844

003aac120

120

P

I

der

D

(%)

(A)

80

(1)

80

40

0

50

100

150

200

0

50

100

150

200

T

(°C)

T

(°C)

mb

V

_GS≥ 10 V

P_tot

P_der

=

× 100 %

-----------------------

(1) Capped at 75 A due to package.

P_tot(25°C)

Fig 1. Normalized total power dissipation as a

function of mounting base temperature

Fig 2. Continuous drain current as a function of

mounting base temperature

003aac121

3

10

I

D

t

= 10 µs

100 µs

p

Limit R

= V / I

DS

(A)

DSon

D

2

10

(1)

1 ms

10

10 ms

DC

100 ms

1

10

−1

2

1

10

V

(V)

DS

T_mb= 25 °C; I_DMis single pulse.

(1) Capped at 75 A due to package.

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

BUK7E07-55B_1

Product data sheet

Rev. 01 — 29 January 2008

3 of 12

BUK7E07-55B

NXP Semiconductors

N-channel TrenchMOS standard level FET

5. Thermal characteristics

Table 4.

Symbol

R_th(j-mb)

R_th(j-a)

Thermal characteristics

Parameter

Conditions

Min

Typ

-

Max Unit

thermal resistance from junction to mounting base -

thermal resistance from junction to ambient

-

0.74 K/W

vertical in still air

60

-

K/W

003aac122

1

Z

δ = 0.5

th(j-mb)

(K/W)

0.2

−1

10

0.1

0.05

0.02

t

p

P

δ =

−2

−3

T

single pulse

t

p

T

−6

−5

−4

−3

−2

−1

10

1

t

(s)

p

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

BUK7E07-55B_1

Product data sheet

Rev. 01 — 29 January 2008

4 of 12

BUK7E07-55B

NXP Semiconductors

N-channel TrenchMOS standard level FET

6. Characteristics

Table 5.

Characteristics

T_j= 25 °C unless otherwise speciﬁed.

Symbol Parameter

Conditions

Min

Typ

Max Unit

Static characteristics

V_(BR)DSSdrain-source breakdown voltage I_D= 0.25 mA; V_GS= 0 V

T_j= 25 °C

55

50

-

V

T_j= −55 °C

V_GS(th)

gate-source threshold voltage

I_D= 1 mA; V_DS= V_GS; see Figure 9 and 10

T_j= 25 °C

2

1

-

3

-

4

V

T_j= 175 °C

-

T_j= −55 °C

-

4.4

I_DSS

drain leakage current

gate leakage current

V_DS= 55 V; V_GS= 0 V

T_j= 25 °C

-

0.02

1

µA

nA

T_j= 175 °C

-

500

100

I_GSS

V_GS= ±20 V; V_DS= 0 V

2

R_DSon

drain-source on-state resistance V_GS= 10 V; I_D= 25 A; see Figure 6 and 8

T_j= 25 °C

-

5.8

-

7.1

mΩ

T_j= 175 °C

14.2 mΩ

Dynamic characteristics

Q_G(tot)

Q_GS

Q_GD

C_iss

C_oss

C_rss

t_d(on)

t_r

total gate charge

gate-source charge

gate-drain charge

input capacitance

output capacitance

reverse transfer capacitance

turn-on delay time

rise time

I_D= 25 A; V_DS= 44 V; V_GS= 10 V;

see Figure 14

-

53

12

17

-

nC

V_GS= 0 V; V_DS= 25 V; f = 1 MHz;

see Figure 12

2820 3760 pF

554

200

24

665

pF

ns

nH

274

V_DS= 30 V; R_L= 1.2 Ω;

-

V_GS= 10 V; R_G= 10 Ω

52

t_d(off)

t_f

turn-off delay time

fall time

77

41

L_D

internal drain inductance

measured from drain lead 6 mm from

package to centre of die

4.5

L_S

internal source inductance

measured from source lead

to source bond pad

-

7.5

-

nH

Source-drain diode

V_SD

t_rr

source-drain voltage

I_S= 25 A; V_GS= 0 V; see Figure 15

-

0.85 1.2

V

reverse recovery time

recovered charge

I_S= 20 A; dI_S/dt = −100 A/µs;

62

60

-

ns

nC

V_GS= 0 V; V_R= 30 V

Q_r

BUK7E07-55B_1

Product data sheet

Rev. 01 — 29 January 2008

5 of 12

BUK7E07-55B

NXP Semiconductors

N-channel TrenchMOS standard level FET

003aac123

003aac124

300

25

20 10 9.0

R

(mΩ)

DSon

V

(V) = 8.5

GS

I

D

(A)

20

8.0

7.5

200

15

10

5

7.0

6.5

100

6.0

5.5

5.0

4.5

0

2

4

6

8

10

(V)

5

10

15

20

V

(V)

GS

DS

T_j= 25 °C

T_j= 25 °C; I_D= 25 A

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig 6. Drain-source on-state resistance as a function

of gate-source voltage; typical values

003aab906

003aac125

2

25

R

(mΩ)

DSon

a

V

(V) = 6.0

GS

6.5

20

7.0

1.5

7.5

8.0

9.0

10

15

10

5

1

0.5

0

−60

0

60

120

180

0

100

200

300

T (°C)

j

I

(A)

D

T_j= 25 °C

R_DSon

a =

-----------------------------

R_{DSon(25°C )}

Fig 7. Drain-source on-state resistance as a function

of drain current; typical values

Fig 8. Normalized drain-source on-state resistance

factor as a function of junction temperature

BUK7E07-55B_1

Product data sheet

Rev. 01 — 29 January 2008

6 of 12

BUK7E07-55B

NXP Semiconductors

N-channel TrenchMOS standard level FET

003aab852

003aab853

−1

−2

−3

−4

−5

−6

5

10

I

V

D

GS(th)

(A)

(V)

min

typ

max

4

10

max

typ

3

2

1

0

min

−60

0

60

120

160

0

2

4

6

T (°C)

V

(V)

j

GS

I_D= 1 mA; V_DS= V_GS

T_j= 25 °C; V_DS= V_GS

Fig 9. Gate-source threshold voltage as a function of

junction temperature

Fig 10. Sub-threshold drain current as a function of

gate-source voltage

003aac126

003aac127

60

4

C

(nF)

g

(S)

fs

C

iss

3

2

1

40

C

oss

20

C

rss

0

10

−2

−1

2

0

25

50

75

100

10

1

10

I

(A)

V

(V)

DS

D

T_j= 25 °C; V_DS= 25 V

V_GS= 0 V; f = 1 MHz

Fig 11. Forward transconductance as a function of

drain current; typical values

Fig 12. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

BUK7E07-55B_1

Product data sheet

Rev. 01 — 29 January 2008

7 of 12

BUK7E07-55B

NXP Semiconductors

N-channel TrenchMOS standard level FET

003aac128

003aac129

100

10

V

(V)

GS

I

D

V

= 14 V

DD

(A)

8

6

4

2

0

75

V

= 44 V

DD

50

25

0

T = 175 °C

T = 25 °C

j

0

2

4

6

8

0

20

40

60

V

(V)

Q (nC)

G

GS

V_DS= 25 V

T_j= 25 °C; I_D= 25 A

Fig 13. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 14. Gate-source voltage as a function of gate

charge; typical values

003aac130

003aac131

2

100

10

I

S

I

(1)

AL

(A)

75

10

(2)

(3)

50

25

0

1

T = 175 °C

T = 25 °C

j

−1

10

−3

−2

−1

0.0

0.5

1.0

1.5

10

1

10

V

(V)

t

(ms)

AL

SD

V_GS= 0 V

See Table note 3 of Table 3 Limiting values.

(1) Single-pulse; T_j= 25 °C.

(2) Single-pulse; T_j= 150 °C.

(3) Repetitive.

Fig 15. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

values

Fig 16. Single-pulse and repetitive avalanche rating;

avalanche current as a function of avalanche

time

BUK7E07-55B_1

Product data sheet

Rev. 01 — 29 January 2008

8 of 12

BUK7E07-55B

NXP Semiconductors

N-channel TrenchMOS standard level FET

7. Package outline

Plastic single-ended package (I2PAK); low-profile 3-lead TO-220AB

SOT226

A

1

E

D

1

mounting

base

D

L

1

Q

b

1

L

1

2

3

b

c

e

0

5

10 mm

scale

DIMENSIONS (mm are the original dimensions)

D

max

D

1

A

1

b

c

E

UNIT

A

b

e

L

Q

1

4.5

4.1

1.40

1.27

0.85

0.60

1.3

1.0

0.7

0.4

1.6

1.2

10.3

9.7

15.0

13.5

3.30

2.79

2.6

2.2

mm

11

2.54

REFERENCES

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

JEDEC

JEITA

low-profile

3-lead TO-220AB

05-06-23

06-02-14

SOT226

Fig 17. Package outline SOT226 (I2PAK)

BUK7E07-55B_1

Product data sheet

Rev. 01 — 29 January 2008

9 of 12

BUK7E07-55B

NXP Semiconductors

N-channel TrenchMOS standard level FET

8. Revision history

Table 6.

Revision history

Document ID

Release date

Data sheet status

Change notice

Supersedes

BUK7E07-55B_1

20080129

Product data

-

BUK7E07-55B_1

Product data sheet

Rev. 01 — 29 January 2008

10 of 12

BUK7E07-55B

NXP Semiconductors

N-channel TrenchMOS standard level FET

9. Legal information

9.1

Data sheet status

Document status^[1][2]

Product status^[3]

Deﬁnition

Objective [short] data sheet

Development

This document contains data from the objective speciﬁcation for product development.

This document contains data from the preliminary speciﬁcation.

This document contains the product speciﬁcation.

Preliminary [short] data sheet Qualiﬁcation

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term ‘short data sheet’ is explained in section “Deﬁnitions”.

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

9.2

Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conﬂict between information in this document and such

terms and conditions, the latter will prevail.

9.3

Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

9.4

Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

TrenchMOS — is a trademark of NXP B.V.

10. Contact information

For additional information, please visit: http://www.nxp.com

For sales ofﬁce addresses, send an email to: salesaddresses@nxp.com

BUK7E07-55B_1

Product data sheet

Rev. 01 — 29 January 2008

11 of 12

BUK7E07-55B

NXP Semiconductors

N-channel TrenchMOS standard level FET

11. Contents

1

Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1

1.2

1.3

1.4

General description. . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2

3

4

5

6

7

8

Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

Ordering information. . . . . . . . . . . . . . . . . . . . . 2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

9

Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

9.1

9.2

9.3

9.4

10

11

Contact information. . . . . . . . . . . . . . . . . . . . . 11

Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 29 January 2008

Document identifier: BUK7E07-55B_1


型号：	BUK7E07-55B,127
厂家：	NXP
描述：	N-channel TrenchMOS standard level FET TO-262 3-Pin
文件：	总12页 (文件大小：81K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BUK7E07-55B,127 [NXP]

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