BUK7E2R7-30B [NXP]
75A, 30V, 0.0027ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, PLASTIC, I2PAK-3;
| 型号： | BUK7E2R7-30B |
| 厂家： | 
NXP |
| 描述： | 75A, 30V, 0.0027ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, PLASTIC, I2PAK-3 |
| 文件： | 总14页 (文件大小：175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUK7E2R7-30B
N-channel TrenchMOS standard level FET
Rev. 04 — 7 June 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
Suitable for standard level gate drive
on-state resistance
sources
Q101 compliant
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V loads
General purpose power switching
Motors, lamps and solenoids
Automotive systems
1.4 Quick reference data
Table 1.
Symbol
VDS
Quick reference data
Parameter
Conditions
Min Typ Max Unit
drain-source
voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
-
-
-
-
-
30
V
[1]
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1; see Figure 3
75
A
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
300
W
Static characteristics
RDSon drain-source
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 11; see Figure 12
-
-
-
2.3
-
2.7
2.3
-
mΩ
J
on-state
resistance
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
ID = 75 A; Vsup ≤ 30 V;
RGS = 50 Ω; VGS = 10 V;
avalanche energy Tj(init) = 25 °C; unclamped
Dynamic characteristics
QGD gate-drain charge VGS = 10 V; ID = 25 A; VDS = 24 V;
Tj = 25 °C; see Figure 13
29
nC
[1] Continuous current is limited by package.
BUK7E2R7-30B
NXP Semiconductors
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
G
D
S
D
gate
mb
D
2
drain
source
3
G
mb
mounting base; connected to
drain
mbb076
S
1
2 3
SOT226 (I2PAK)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BUK7E2R7-30B
I2PAK
plastic single-ended package (I2PAK); TO-262
SOT226
BUK7E2R7-30B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 7 June 2010
2 of 14
BUK7E2R7-30B
NXP Semiconductors
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Typ
Max
30
Unit
V
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
RGS = 20 kΩ
-
-
-
-
-
VDGR
VGS
-
30
V
-20
-
20
V
[1]
ID
Tmb = 25 °C; VGS = 10 V; see Figure 1;
see Figure 3
241
A
[2]
[2]
Tmb = 100 °C; VGS = 10 V; see Figure 1
-
-
-
-
75
75
A
A
Tmb = 25 °C; VGS = 10 V; see Figure 1;
see Figure 3
IDM
peak drain current
Tmb = 25 °C; tp ≤ 10 µs; pulsed;
-
-
967
A
see Figure 3
Ptot
Tstg
Tj
total power dissipation Tmb = 25 °C; see Figure 2
storage temperature
-
-
-
-
300
175
175
W
-55
-55
°C
°C
junction temperature
Source-drain diode
[1]
[2]
IS
source current
Tmb = 25 °C
-
-
-
-
-
-
241
75
A
A
A
ISM
peak source current
tp ≤ 10 µs; pulsed; Tmb = 25 °C
967
Avalanche ruggedness
EDS(AL)S non-repetitive
ID = 75 A; Vsup ≤ 30 V; RGS = 50 Ω;
-
-
2.3
J
drain-source
VGS = 10 V; Tj(init) = 25 °C; unclamped
avalanche energy
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
BUK7E2R7-30B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 7 June 2010
3 of 14
BUK7E2R7-30B
NXP Semiconductors
N-channel TrenchMOS standard level FET
03na19
03ng51
120
250
I
D
(A)
P
der
(%)
200
80
150
100
50
40
Capped at 75 A due to package
0
0
0
50
100
150
200
0
50
100
150
200
T
mb
(°C)
T
mb
(°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
03ng27
4
10
I
D
(A)
3
2
Limit R
= V /I
DS D
DSon
10
t
= 10 μs
p
100 μs
10
1 ms
Capped at 75 A due to package
10 ms
DC
100 ms
10
1
10
−1
2
1
10
10
V
DS
(V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7E2R7-30B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 7 June 2010
4 of 14
BUK7E2R7-30B
NXP Semiconductors
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from junction to
mounting base
see Figure 4
-
-
0.5
K/W
Rth(j-a)
thermal resistance from junction to
ambient
vertical in still air
-
60
-
K/W
03ng28
1
Z
th(j-mb)
(K/W)
δ = 0.5
−1
0.2
10
10
10
0.1
0.05
t
0.02
p
P
δ =
−2
−3
T
Single Shot
t
t
p
T
−6
−5
−4
−3
−2
−1
10
10
10
10
10
10
1
t
p
(s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7E2R7-30B
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 7 June 2010
5 of 14
BUK7E2R7-30B
NXP Semiconductors
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
30
27
2
-
-
V
V
V
-
-
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
3
4
voltage
see Figure 10
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 10
1
-
-
-
-
V
V
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 10
4.4
IDSS
drain leakage current
gate leakage current
VDS = 30 V; VGS = 0 V; Tj = 175 °C
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 0 V; VGS = 20 V; Tj = 25 °C
VDS = 0 V; VGS = -20 V; Tj = 25 °C
-
-
-
-
-
-
500
1
µA
µA
nA
nA
mΩ
0.02
IGSS
2
2
-
100
100
5.1
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 11; see Figure 12
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 11; see Figure 12
-
2.3
2.7
mΩ
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
ID = 25 A; VDS = 24 V; VGS = 10 V;
Tj = 25 °C; see Figure 13
-
-
-
-
-
-
91
19
29
-
-
-
nC
nC
nC
gate-source charge
gate-drain charge
input capacitance
output capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 14
4659 6212 pF
1691 2029 pF
Coss
Crss
reverse transfer
capacitance
622
852
pF
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 10 Ω; Tj = 25 °C
-
-
-
-
-
31
-
-
-
-
-
ns
ns
ns
ns
nH
107
113
118
4.5
turn-off delay time
fall time
LD
internal drain
inductance
from drain lead 6 mm from package to
center of die ; Tj = 25 °C
from upper edge of drain mounting base
to centre of die ; Tj = 25 °C
-
-
2.5
7.5
-
-
nH
nH
LS
internal source
inductance
from source lead to source bond pad ;
Tj = 25 °C
Source-drain diode
VSD
source-drain voltage
IS = 40 A; VGS = 0 V; Tj = 25 °C;
see Figure 15
-
0.85
1.2
V
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs;
-
-
88
-
-
ns
VGS = -10 V; VDS = 20 V; Tj = 25 °C
Qr
recovered charge
132
nC
BUK7E2R7-30B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 7 June 2010
6 of 14
BUK7E2R7-30B
NXP Semiconductors
N-channel TrenchMOS standard level FET
03nh13
03nh14
5
350
20
10
7
Label is V (V)
GS
I
D
(A)
R
(mΩ)
DSon
280
6
5.5
4
3
2
1
210
140
70
5
4.5
4
0
0
2
4
6
8
10
5
10
15
20
V
DS
(V)
V
GS
(V)
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Drain-source on-state resistance as a function
of drain current; typical values
03aa35
03nh11
−1
10
100
I
D
g
(S)
fs
(A)
min
typ
max
−2
−3
−4
−5
−6
10
75
50
25
0
10
10
10
10
0
20
40
60
80
0
2
4
6
V
GS
(V)
I (A)
D
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
BUK7E2R7-30B
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 7 June 2010
7 of 14
BUK7E2R7-30B
NXP Semiconductors
N-channel TrenchMOS standard level FET
03nh12
03aa32
5
100
V
GS(th)
(V)
I
D
(A)
4
3
2
1
0
max
75
typ
50
25
0
min
T = 175 °C
j
T = 25 °C
j
0
2
4
6
−60
0
60
120
180
T (°C)
j
V
GS
(V)
Fig 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 10. Gate-source threshold voltage as a function of
junction temperature
03aa27
03nh15
2
10
Label is V (V)
GS
5
R
(mΩ)
DSon
a
5.5
1.5
8
6
4
2
6
1
0.5
0
6.5
7
8
10
0
70
140
210
280
350
−60
0
60
120
180
T ( C)
°
j
I
(A)
D
Fig 11. Drain-source on-state resistance as a function
of drain current; typical values
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK7E2R7-30B
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 7 June 2010
8 of 14
BUK7E2R7-30B
NXP Semiconductors
N-channel TrenchMOS standard level FET
03nh10
03nh16
10
10000
V
(V)
GS
C
(pF)
8
6
4
2
0
7500
5000
2500
0
V
= 14 V
V
= 24 V
DD
DD
C
iss
C
C
oss
rss
−1
2
0
25
50
75
100
10
1
10
10
Q
G
(nC)
V
DS
(V)
Fig 13. Gate-source voltage as a function of gate
charge; typical values
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
03nh09
100
I
S
(A)
75
50
25
0
T = 175 °C
j
T = 25 °C
j
0
0.2
0.4
0.6
0.8
V
1.0
(V)
SD
Fig 15. Source current as a function of source-drain voltage; typical values
BUK7E2R7-30B
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 7 June 2010
9 of 14
BUK7E2R7-30B
NXP Semiconductors
N-channel TrenchMOS standard level FET
7. Package outline
Plastic single-ended package (I2PAK); low-profile 3-lead TO-262
SOT226
A
A
1
E
D
1
mounting
base
D
L
1
Q
b
1
L
1
e
2
3
b
c
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
D
max
D
1
A
1
b
c
E
UNIT
A
b
e
L
L
Q
1
1
4.5
4.1
1.40
1.27
0.85
0.60
1.3
1.0
0.7
0.4
1.6
1.2
10.3
9.7
15.0
13.5
3.30
2.79
2.6
2.2
mm
11
2.54
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
06-02-14
09-08-25
SOT226
TO-262
Fig 16. Package outline SOT226 (I2PAK)
BUK7E2R7-30B
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 7 June 2010
10 of 14
BUK7E2R7-30B
NXP Semiconductors
N-channel TrenchMOS standard level FET
8. Revision history
Table 7.
Revision history
Document ID
Release date Data sheet status
20100607 Product data sheet
Change notice
Supersedes
BUK7E2R7-30B v.4
Modifications:
-
BUK75_76_7E2R7_30B_3
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Type number BUK7E2R7-30B separated from data sheet BUK75_76_7E2R7_30B_3.
BUK75_76_7E2R7_30B_3 20031013
(9397 750 12048)
Product data
-
-
BUK7E2R7-30B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 7 June 2010
11 of 14
BUK7E2R7-30B
NXP Semiconductors
N-channel TrenchMOS standard level FET
9. Legal information
9.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
Suitability for use in automotive applications — This NXP
9.2 Definitions
Semiconductors product has been qualified for use in automotive
applications. The product is not designed, authorized or warranted to be
suitable for use in medical, military, aircraft, space or life support equipment,
nor in applications where failure or malfunction of an NXP Semiconductors
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. NXP Semiconductors accepts no
liability for inclusion and/or use of NXP Semiconductors products in such
equipment or applications and therefore such inclusion and/or use is at the
customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application/use or the application/use of customer’s third party
customer(s) (hereinafter both referred to as “Application”). It is customer’s
sole responsibility to check whether the NXP Semiconductors product is
suitable and fit for the Application planned. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and the
product. NXP Semiconductors does not accept any liability in this respect.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Limiting values — Stress above one or more limiting values (as defined in the
Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
9.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
BUK7E2R7-30B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 7 June 2010
12 of 14
BUK7E2R7-30B
NXP Semiconductors
N-channel TrenchMOS standard level FET
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
9.4 Trademarks
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Corporation.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BUK7E2R7-30B
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 7 June 2010
13 of 14
BUK7E2R7-30B
NXP Semiconductors
N-channel TrenchMOS standard level FET
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
9.1
9.2
9.3
9.4
10
Contact information. . . . . . . . . . . . . . . . . . . . . .13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 7 June 2010
Document identifier: BUK7E2R7-30B
相关型号：
BUK7E4R6-60E
100A, 60V, 0.0046ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, PLASTIC, TO-262, I2PAK-3
NXP
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