BUK7L11-34ARC,127 [NXP]
N-channel TrenchPLUS standard level FET TO-220 3-Pin;
| 型号： | BUK7L11-34ARC,127 |
| 厂家： | 
NXP |
| 描述： | N-channel TrenchPLUS standard level FET TO-220 3-Pin 局域网 开关 脉冲 晶体管 |
| 文件： | 总14页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUK7L11-34ARC
TrenchPLUS standard level FET
Rev. 04 — 16 December 2005
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips General-Purpose Automotive (GPA) TrenchMOS technology.
1.2 Features
■ ESD and clamping diodes
■ Q101 compliant
■ 175 °C rated
■ Internal gate resistor
1.3 Applications
■ Automotive systems
■ Motors, lamps and solenoids
■ General purpose power switching
■ 12 V loads
1.4 Quick reference data
■ EDS(CL)S ≤ 465 mJ
■ ID ≤ 75 A
■ RDSon = 8 mΩ (typ)
■ Ptot ≤ 172 W
2. Pinning information
Table 1:
Pinning
Pin Description
Simplified outline
Symbol
1
2
3
gate (G)
mb
D
drain (D)
source (S)
mb mounting base;
connected to drain (D)
G
S
mbl521
1
2 3
mbl370
SOT78C (TO-220)
BUK7L11-34ARC
Philips Semiconductors
TrenchPLUS standard level FET
3. Ordering information
Table 2:
Ordering information
Type number
Package
Name
Description
Version
BUK7L11-34ARC 3-lead TO-220 Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads SOT78C
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
34
Unit
V
[1]
[1]
VDS
VDGR
VGS
ID
drain-source voltage (DC)
-
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
RGS = 20 kΩ
-
34
V
-
±20
89
V
[2] [4]
[3]
Tmb = 25 °C; VGS = 10 V;
Figure 2 and 3
-
A
-
75
A
Tmb = 100 °C; VGS = 10 V; Figure 2
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
Tmb = 25 °C; Figure 1
-
63
A
IDM
peak drain current
-
358
172
50
A
Ptot
total power dissipation
drain-gate clamping current
gate-source clamping current
-
W
mA
mA
mA
°C
°C
IDG(CL)
IGS(CL)
tp = 5 ms; δ = 0.01
-
continuous
-
10
tp = 5 ms; δ = 0.01
-
50
Tstg
Tj
storage temperature
junction temperature
−55
−55
+175
+175
Source-drain diode
[2] [4]
[3]
IDR
reverse drain current (DC)
Tmb = 25 °C
-
-
-
89
A
A
A
75
IDRM
peak reverse drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs
358
Avalanche ruggedness
EDS(CL)S non-repetitive drain-source clamped unclamped inductive load; ID = 60 A;
-
465
mJ
energy
VDS ≤ 34 V; VGS = 10 V;
starting at Tj = 25 °C
Electrostatic discharge
Vesd
electrostatic discharge voltage; all
pins
human body model; C = 100 pF;
R = 1.5 kΩ
-
-
8
6
kV
kV
human body model; C = 250 pF;
R = 1.5 kΩ
[1] Voltage is limited by clamping.
[2] Current is limited by power dissipation chip rating.
[3] Continuous current is limited by package.
[4] Refer to document 9397 750 12572 for further information.
BUK7L11-34ARC_4
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 — 16 December 2005
2 of 14
BUK7L11-34ARC
Philips Semiconductors
TrenchPLUS standard level FET
03aa16
03nj52
120
100
ID
Pder
(%)
(A)
80
(1)
80
40
0
60
40
20
0
0
50
100
150
200
0
50
100
150
200
Tmb ( C)
°
Tmb (°C)
V
GS ≥ 10 V
Ptot
Pder
=
× 100 %
------------------------
P
(1) Capped at 75 A due to package.
°
tot(25 C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
Fig 2. Continuous drain current as a function of
mounting base temperature
03nj50
103
tp = 10 µs
ID
Limit RDSon = VDS / ID
(A)
102
100 µs
(1)
1 ms
10 ms
DC
10
100 ms
1
1
10
102
VDS (V)
Tmb = 25 °C; IDM is single pulse.
(1) Capped at 75 A due to package.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7L11-34ARC_4
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 — 16 December 2005
3 of 14
BUK7L11-34ARC
Philips Semiconductors
TrenchPLUS standard level FET
5. Thermal characteristics
Table 4:
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max Unit
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
-
-
0.55 0.87 K/W
vertical in free air
60
-
K/W
5.1 Transient thermal impedance
03nj51
1
δ = 0.5
Zth(j-mb)
(K/W) 0.2
0.1
10-1
0.05
0.02
tp
P
10-2
δ =
T
single shot
t
tp
T
10-3
10-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7L11-34ARC_4
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 — 16 December 2005
4 of 14
BUK7L11-34ARC
Philips Semiconductors
TrenchPLUS standard level FET
6. Characteristics
Table 5:
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
Static characteristics
V(BR)DG
drain-gate zener breakdown voltage ID = 2 mA; VGS = 0 V
Tj = 25 °C
34
34
-
-
45
45
-
V
V
V
Tj = −55 °C
-
VDSR(CL) drain-source clamping voltage (DC) IGS(CL) = −2 mA; ID = 1 A; Figure 17 and
41
18
VGS(th)
gate-source threshold voltage
drain-source leakage current
ID = 1 mA; VDS = VGS; Figure 9 and 10
Tj = 25 °C
2.2
1.5
1.2
-
3
-
3.8
-
V
V
V
V
Tj = 150 °C
Tj = 175 °C
-
-
Tj = −55 °C
-
4.2
IDSS
VDS = 16 V; VGS = 0 V
Tj = 25 °C
-
0.1
3
2
µA
µA
µA
V
Tj = 150 °C
-
50
250
-
Tj = 175 °C
-
18
22
V(BR)GSS gate-source breakdown voltage
IG = ±1 mA; −55 °C < Tj + 175 °C;
20
Figure 18 and 19
IGSS
gate-source leakage current
VGS = ±10 V; VDS = 0 V
Tj = 25 °C
-
-
5
-
1000 nA
Tj = 175 °C
50
µA
µA
mΩ
VGS = 16 V; VDS = 0 V
Tj = 175 °C
-
-
150
11
RDSon
drain-source on-state resistance
internal gate resistor
VGS = 10 V; ID = 30 A; Figure 6 and 8
Tj = 25 °C
-
-
-
-
8
Tj = 175 °C
-
20.9 mΩ
VGS = 16 V; ID = 30 A
7
9.7
-
mΩ
RG
11
Ω
Dynamic characteristics
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
ID = 25 A; VDD = 27 V; VGS = 10 V;
Figure 14
-
-
-
-
-
-
-
-
-
-
53
11
20
-
-
-
nC
nC
nC
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Figure 12
1880 2506 pF
640
400
20
768
pF
pF
ns
ns
ns
ns
548
VDS = 30 V; RL = 1.2 Ω;
-
-
-
-
VGS = 10 V; RG = 10 Ω
92
td(off)
tf
turn-off delay time
fall time
127
118
BUK7L11-34ARC_4
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 — 16 December 2005
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BUK7L11-34ARC
Philips Semiconductors
TrenchPLUS standard level FET
Table 5:
Characteristics …continued
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
Ld
internal drain inductance
from drain lead 6 mm from package to
center of die
-
4.5
-
-
-
nH
nH
nH
from contact screw on mounting base to
center of die
-
-
3.5
7.5
Ls
internal source inductance
from source lead to source bonding pad
Source-drain diode
VSD
trr
source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 15
-
-
-
0.85 1.2
V
reverse recovery time
recovered charge
IS = 20 A; dIS/dt = −100 A/µs;
GS = 0 V; VR = 30 V
52
28
-
-
ns
nC
V
Qr
BUK7L11-34ARC_4
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 — 16 December 2005
6 of 14
BUK7L11-34ARC
Philips Semiconductors
TrenchPLUS standard level FET
03nj47
03nj46
400
30
RDSon
(mΩ)
25
20
ID
16
14
(A)
12
300
VGS (V) = 10
9.5
9
20
15
10
5
200
100
0
8.5
8
7.5
7
6.5
6
5.5
5
4.5
5
10
15
20
0
2
4
6
8
10
V
GS (V)
V
DS (V)
Tj = 25 °C
Tj = 25 °C; ID = 30 A
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values
03aa27
03nj48
2
25
RDSon
5
6
7
8
10
a
(mΩ)
1.5
20
15
10
5
1
0.5
0
VGS (V) = 20
-60
0
60
120
180
0
100
200
300
400
T ( C)
ID (A)
°
j
Tj = 25 °C
RDSon
a =
------------------------------
RDSon(25
°
C)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK7L11-34ARC_4
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 — 16 December 2005
7 of 14
BUK7L11-34ARC
Philips Semiconductors
TrenchPLUS standard level FET
03nh86
03nh87
5
10-1
ID
VGS(th)
max
(V)
(A)
4
10-2
10-3
10-4
10-5
10-6
typ
min
typ
max
3
min
2
1
0
-60
0
60
120
180
0
2
4
6
V
GS (V)
Tj (°C)
ID = 1 mA; VDS = VGS
Tj = 25 °C; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
03nj44
03nj49
40
4000
gfs
C
(pF)
(S)
30
20
10
0
3000
2000
1000
0
Ciss
Coss
Crss
0
20
40
60
80
10-1
1
10
102
ID (A)
VDS (V)
Tj = 25 °C; VDS = 25 V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK7L11-34ARC_4
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 — 16 December 2005
8 of 14
BUK7L11-34ARC
Philips Semiconductors
TrenchPLUS standard level FET
03nj45
03nj43
100
ID
10
VGS
(V)
(A)
80
60
40
8
VDD = 14 V
VDD = 27 V
6
4
2
0
20
Tj = 175 °C
Tj = 25 °C
0
0
2
4
6
8
0
20
40
60
Q
G (nC)
V
GS (V)
VDS = 25 V
Tj = 25 °C; ID = 25 A
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 14. Gate-source voltage as a function of gate
charge; typical values
03nj42
100
IS
(A)
80
60
40
Tj = 175 °C
20
Tj = 25 °C
0
0.0
0.2
0.4
0.6
0.8
1.0
V
1.2
SD (V)
VGS = 0 V
Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
BUK7L11-34ARC_4
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 — 16 December 2005
9 of 14
BUK7L11-34ARC
Philips Semiconductors
TrenchPLUS standard level FET
03nj56
03nj57
43
42.0
VDSR(CL)
(V)
Tj = 175 °C
VDSR(CL)
Tj = 175 °C
(V)
42
41
40
39
Tj = 25 °C
Tj = -55 °C
41.5
Tj = 25 °C
Tj = -55 °C
41.0
40.5
0
1
2
3
0
2
4
6
8
10
-IGS(CL) (mA)
ID (A)
IGD(CL) = −2 mA
ID = 10 A
Fig 16. Drain-source clamping voltage as a function of
drain current; typical values
Fig 17. Drain-source clamping voltage as a function of
gate-source clamping current; typical values
003aab215
003aab216
10-1
1.03
IG
a
(A)
1.02
10-2
10-3
10-4
10-5
1.01
1
0.99
0.98
20
22
24
26
28
30
32
-100
-50
0
50
100
150
200
V
(BR)GSS (V)
Tj (°C)
V(BR)GSS
a =
--------------------------------------
V
°
(BR)GSS(25 C)
Fig 18. Source-gate clamping current as a function of
source-gate clamping voltage; typical values
Fig 19. Normalized source-gate clamping voltage as a
function of junction temperature; typical values
BUK7L11-34ARC_4
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 — 16 December 2005
10 of 14
BUK7L11-34ARC
Philips Semiconductors
TrenchPLUS standard level FET
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads
SOT78C
E
p
A
A
1
mounting
base
q
D
1
q
1
D
q
2
L
Q
1
L
b
1
1
2
3
b
c
e
e
1
H
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
b
e
L
1
A
b
D
E
L
D
e
H
A
c
UNIT
mm
p
Q
q
q
q
2
1
1
1
1
1
4.58
4.31
1.33
1.21
0.87
0.76
1.33
1.21
0.44 15.07 6.47 10.40 2.64
0.33 14.80 6.22 10.00 2.44
5.16 6.03 14.00 6.10 3.90
5.00 5.76 13.50 5.58 3.78
2.72
2.40
2.95
2.69
3.80 12.40
3.42 12.00
Notes
1. Terminals in this zone are not tinned.
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
01-12-11
03-01-21
SOT78C
3-lead TO-220
Fig 20. Package outline SOT78C (3-lead TO-220)
BUK7L11-34ARC_4
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 — 16 December 2005
11 of 14
BUK7L11-34ARC
Philips Semiconductors
TrenchPLUS standard level FET
8. Revision history
Table 6:
Revision history
Document ID
Release Data sheet Change
Doc. number
Supersedes
date
20051216 Product
data sheet
status
notice
BUK7L11-34ARC_4
Modifications:
-
-
BUK7L11_34ARC-03
• The format of this data sheet has been redesigned to comply with the new
presentation and information standard of Philips Semiconductors.
• Figure 18 and Figure 19 added.
BUK7L11_34ARC-03
Modifications:
20031203 Product
data
-
9397 750 12163 BUK7L11_34ARC-02
• Avalanche ruggedness parameter description in limiting values changed from:
‘non-repetitive drain-source avalanche energy’ to ‘non-repetitive drain-source clamp
energy’.
BUK7L11_34ARC-02
20030522 Product
data
-
9397 750 11472 BUK7L11_34ARC-01
Modifications:
• Typical values of IDSS added to characteristics table.
BUK7L11_34ARC-01
20030423 Product
data
-
9397 750 11178
-
BUK7L11-34ARC_4
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 — 16 December 2005
12 of 14
BUK7L11-34ARC
Philips Semiconductors
TrenchPLUS standard level FET
9. Data sheet status
Level Data sheet status[1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
10. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
makes no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
12. Trademarks
Notice — All referenced brands, product names, service names and
trademarks are the property of their respective owners.
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
11. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
13. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
BUK7L11-34ARC_4
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 — 16 December 2005
13 of 14
BUK7L11-34ARC
Philips Semiconductors
TrenchPLUS standard level FET
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information . . . . . . . . . . . . . . . . . . . . 13
3
4
5
5.1
6
7
8
9
10
11
12
13
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 16 December 2005
Document number: BUK7L11-34ARC_4
Published in The Netherlands
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