BUK7Y38-100E [NXP]
N-channel 100 V, 38 mΩ standard level MOSFET in LFPAK56; N沟道100伏，在LFPAK56 38英里©标准级MOSFET
| 型号： | BUK7Y38-100E |
| 厂家： | 
NXP |
| 描述： | N-channel 100 V, 38 mΩ standard level MOSFET in LFPAK56 |
| 文件： | 总13页 (文件大小：351K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
K
A
P
BUK7Y38-100E
N-channel 100 V, 38 mΩ standard level MOSFET in LFPAK56
F
L
20 February 2013
Product data sheet
1. General description
Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using
TrenchMOS technology. This product has been designed and qualified to AEC Q101
standard for use in high performance automotive applications.
2. Features and benefits
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th) rating of greater than 1 V at 175 °C
•
•
•
•
3. Applications
12 V, 24 V and 48 V Automotive systems
Motors, lamps and solenoid control
Transmission control
•
•
•
•
Ultra high performance power switching
4. Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
100
30
Unit
V
VDS
ID
drain-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C; Fig. 1
-
-
-
-
-
-
A
Ptot
total power dissipation Tmb = 25 °C; Fig. 2
95
W
Static characteristics
RDSon drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 11
-
-
24.5
11.3
38
-
mΩ
nC
VGS = 10 V; ID = 5 A; VDS = 80 V;
Tj = 25 °C; Fig. 13; Fig. 14
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NXP Semiconductors
BUK7Y38-100E
N-channel 100 V, 38 mΩ standard level MOSFET in LFPAK56
5. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
mb
D
S
1
S
S
S
G
D
source
source
source
gate
2
G
3
mbb076
4
1
2 3 4
mb
mounting base; connected to
drain
LFPAK; Power-
SO8 (SOT669)
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BUK7Y38-100E
LFPAK;
plastic single-ended surface-mounted package; 4 leads
SOT669
Power-SO8
7. Marking
Table 4.
Marking codes
Type number
Marking code
BUK7Y38-100E
73810E
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
100
100
20
Unit
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
RGS = 20 kΩ
-
V
VDGR
VGS
-
V
Tj ≤ 175 °C; DC
-20
V
ID
Tmb = 25 °C; VGS = 10 V; Fig. 1
Tmb = 100 °C; VGS = 10 V; Fig. 1
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4
Tmb = 25 °C; Fig. 2
-
30
A
-
21
A
IDM
Ptot
Tstg
peak drain current
-
120
95
A
total power dissipation
storage temperature
-
W
°C
-55
175
BUK7Y38-100E
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Product data sheet
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2 / 13
NXP Semiconductors
BUK7Y38-100E
N-channel 100 V, 38 mΩ standard level MOSFET in LFPAK56
Symbol
Parameter
Conditions
Min
Max
Unit
Tj
junction temperature
-55
175
°C
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C
-
-
30
A
A
ISM
pulsed; tp ≤ 10 µs; Tmb = 25 °C
120
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
ID = 30 A; Vsup ≤ 100 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped;
Fig. 3
[1][2]
-
45.2
mJ
[1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[2] Refer to application note AN10273 for further information.
003aai565
03aa16
40
30
20
10
0
120
I
D
(A)
P
der
(%)
80
40
0
0
30
60
90
120
150
T (°C)
j
180
0
50
100
150
200
T
(°C)
mb
Fig. 1. Continuous drain current as a function of
mounting base temperature
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
BUK7Y38-100E
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Product data sheet
20 February 2013
3 / 13
NXP Semiconductors
BUK7Y38-100E
N-channel 100 V, 38 mΩ standard level MOSFET in LFPAK56
003aai566
2
10
I
AL
(A)
(1)
10
(2)
(3)
1
-1
10
-2
10
-3
-2
-1
10
10
10
1
AL
10
t
(ms)
Fig. 3. Avalanche rating; avalanche current as a function of avalanche time
003aai567
3
10
I
D
(A)
Limit R
= V / I
DS
DSon
D
2
10
t
= 10 us
p
10
100 us
1
DC
1 ms
-1
10
10 ms
100 ms
-2
10
2
3
1
10
10
10
V
(V)
DS
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
K/W
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 5
-
-
1.58
BUK7Y38-100E
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Product data sheet
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NXP Semiconductors
BUK7Y38-100E
N-channel 100 V, 38 mΩ standard level MOSFET in LFPAK56
003aai568
10
Z
th(j-mb)
(K/W)
1
δ = 0.5
0.2
0.1
-1
10
10
10
0.05
0.02
single shot
t
p
P
δ =
T
-2
t
t
p
T
-3
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
1
t
p
(s)
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
100
90
-
-
V
V
V
-
-
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
2.4
3
4
voltage
Fig. 9; Fig. 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 9
-
-
-
4.5
-
V
V
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 9
1
IDSS
drain leakage current
gate leakage current
VDS = 100 V; VGS = 0 V; Tj = 25 °C
VDS = 100 V; VGS = 0 V; Tj = 175 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 11
-
-
-
-
-
-
0.05
1
µA
µA
nA
-
500
100
100
38
IGSS
2
2
nA
RDSon
drain-source on-state
resistance
24.5
-
mΩ
mΩ
VGS = 10 V; ID = 5 A; Tj = 175 °C;
Fig. 12; Fig. 11
105
Dynamic characteristics
QG(tot) total gate charge
QGS
ID = 5 A; VDS = 80 V; VGS = 10 V;
Tj = 25 °C; Fig. 13; Fig. 14
-
-
-
30.9
5
-
-
-
nC
nC
nC
gate-source charge
gate-drain charge
QGD
11.3
BUK7Y38-100E
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Product data sheet
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NXP Semiconductors
BUK7Y38-100E
N-channel 100 V, 38 mΩ standard level MOSFET in LFPAK56
Symbol
Ciss
Parameter
Conditions
Min
Typ
Max
Unit
input capacitance
output capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; Fig. 15
-
-
-
1293 1720 pF
Coss
145
109
174
149
pF
pF
Crss
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 80 V; RL = 10 Ω; VGS = 10 V;
RG(ext) = 5 Ω; Tj = 25 °C
-
-
-
-
6.6
9.9
22
-
-
-
-
ns
ns
ns
ns
turn-off delay time
fall time
12.6
Source-drain diode
VSD source-drain voltage
trr
IS = 5 A; VGS = 0 V; Tj = 25 °C; Fig. 16
-
-
-
0.79
34.2
45.5
1.2
V
reverse recovery time IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V;
-
-
ns
nC
VDS = 25 V
Qr
recovered charge
003aai569
003aai570
80
64
48
32
16
0
100
R
DSon
10 V
I
D
6 V
(A)
5.5 V
80
5 V
60
40
20
0
4.5 V
= 4 V
V
GS
0
1.5
3
4.5
DS
6
0
4
8
12
16
V (V)
GS
20
V
(V)
Tj = 25 °C; tp = 300 μs
Fig. 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig. 6. Output characteristics; drain current as a
function of drain-source voltage; typical values
BUK7Y38-100E
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Product data sheet
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NXP Semiconductors
BUK7Y38-100E
N-channel 100 V, 38 mΩ standard level MOSFET in LFPAK56
003aai572
003aah027
50
5
I
D
V
GS(th)
(V)
(A)
max
40
30
20
10
0
4
3
2
1
0
typ
min
175°C
T = 25°C
j
-60
0
60
120
180
0
1
2
3
4
5
6
T ( C)
V
(V)
°
GS
j
Fig. 8. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
Fig. 9. Gate-source threshold voltage as a function of
junction temperature
003aah028
003aai575
-1
100
10
R
DSon
I
D
4.5 V
5 V
(A)
-2
80
10
typ
max
min
-3
-4
-5
-6
10
10
10
10
60
40
20
0
5.5 V
6 V
V
= 10 V
GS
0
2
4
6
0
10
20
30
40
(A)
50
V
(V)
I
D
GS
Tj = 25 °C; tp = 300 μs
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
BUK7Y38-100E
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Product data sheet
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NXP Semiconductors
BUK7Y38-100E
N-channel 100 V, 38 mΩ standard level MOSFET in LFPAK56
003aaj819
3
V
DS
a
I
D
2.4
1.8
1.2
0.6
0
V
GS(pl)
V
GS(th)
GS
V
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
003aaa508
Fig. 13. Gate charge waveform definitions
-60
0
60
120
180
Tj °C)
(
Fig. 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
003aai577
003aai578
4
10
10
V
GS
(V)
C
(pF)
8
6
4
2
0
C
iss
3
10
V
= 14 V
GS
80 V
C
C
oss
rss
2
10
10
-1
2
0
5
10
15
20
25
Q
30
(nC)
35
10
1
10
10
V
(V)
DS
G
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
Fig. 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK7Y38-100E
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Product data sheet
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NXP Semiconductors
BUK7Y38-100E
N-channel 100 V, 38 mΩ standard level MOSFET in LFPAK56
003aai579
120
100
80
60
40
20
0
I
S
(A)
175°C
T = 25°C
j
0
0.2
0.4
0.6
0.8
1
(V)
1.2
V
SD
Fig. 16. Source-drain (diode forward) current as a function of source-drain (diode forward) voltage; typical values
BUK7Y38-100E
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Product data sheet
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NXP Semiconductors
BUK7Y38-100E
N-channel 100 V, 38 mΩ standard level MOSFET in LFPAK56
11. Package outline
Plastic single-ended surface-mounted package (LFPAK; Power-SO8); 4 leads
SOT669
A
2
E
A
C
c
E
b
b
2
1
2
L
3
1
mounting
base
b
4
D
1
D
H
L
2
1
2
3
4
X
e
w
M
c
A
b
1/2 e
A
(A )
3
C
A
1
θ
L
detail X
y
C
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
D
(1)
D
(1)
(1)
1
A
A
A
H
L
L
L
2
w
y
θ
UNIT
A
b
b
b
b
c
c
E
E
1
e
1
2
3
1
2
3
4
2
max
1.20 0.15 1.10
1.01 0.00 0.95
0.50 4.41 2.2 0.9 0.25 0.30 4.10
0.35 3.62 2.0 0.7 0.19 0.24 3.80
5.0 3.3
4.8 3.1
6.2 0.85 1.3
5.8 0.40 0.8
1.3
0.8
8°
0°
mm
0.25
4.20
1.27
0.25 0.1
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
06-03-16
11-03-25
SOT669
MO-235
Fig. 17. Package outline LFPAK; Power-SO8 (SOT669)
BUK7Y38-100E
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Product data sheet
20 February 2013
10 / 13
NXP Semiconductors
BUK7Y38-100E
N-channel 100 V, 38 mΩ standard level MOSFET in LFPAK56
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
12. Legal information
12.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Suitability for use in automotive applications — This NXP
Product
[short] data
sheet
Production
This document contains the product
specification.
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
12.2 Definitions
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the NXP Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
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damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
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data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
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applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
BUK7Y38-100E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
20 February 2013
11 / 13
NXP Semiconductors
BUK7Y38-100E
N-channel 100 V, 38 mΩ standard level MOSFET in LFPAK56
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
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Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
BUK7Y38-100E
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Product data sheet
20 February 2013
12 / 13
NXP Semiconductors
BUK7Y38-100E
N-channel 100 V, 38 mΩ standard level MOSFET in LFPAK56
13. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
Applications ........................................................... 1
Quick reference data ............................................. 1
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................2
Thermal characteristics .........................................4
Characteristics .......................................................5
Package outline ................................................... 10
3
4
5
6
7
8
9
10
11
12
Legal information .................................................11
Data sheet status ............................................... 11
Definitions ...........................................................11
Disclaimers .........................................................11
Trademarks ........................................................ 12
12.1
12.2
12.3
12.4
© NXP B.V. 2013. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 20 February 2013
BUK7Y38-100E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
20 February 2013
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