BUK9520-100B,127 [NXP]
N-channel TrenchMOS logic level FET TO-220 3-Pin;型号: | BUK9520-100B,127 |
厂家: | NXP |
描述: | N-channel TrenchMOS logic level FET TO-220 3-Pin |
文件: | 总12页 (文件大小:188K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BUK9520-100B
N-channel TrenchMOS logic level FET
Rev. 01 — 6 May 2009
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC-Q101 compliant
Suitable for logic level gate drive
sources
Low conduction losses due to low
on-state resistance
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Motors, lamps and solenoids
Automotive and general purpose
power switching
1.4 Quick reference data
Table 1.
Quick reference
Symbol Parameter
Conditions
drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
Min
Typ
Max Unit
VDS
ID
-
-
-
-
100
63
V
A
drain current
VGS = 5 V; Tmb = 25 °C;
see Figure 1; see Figure 3
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
-
-
-
-
203
222
W
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
ID = 63 A; Vsup ≤ 100 V;
RGS = 50 Ω; VGS = 5 V;
Tj(init) = 25 °C; unclamped
mJ
avalanche energy
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 4.5 V; ID = 25 A;
Tj = 25 °C; see Figure 11;
see Figure 12
-
-
16.4 22.3 mΩ
VGS = 5 V; ID = 25 A;
16.2 20
mΩ
Tj = 25 °C; see Figure 12;
see Figure 11
BUK9520-100B
NXP Semiconductors
N-channel TrenchMOS logic level FET
2. Pinning information
Table 2.
Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
G
D
S
D
gate
mb
D
2
drain
source
3
G
mb
mounting base; connected to
drain
mbb076
S
1
2 3
SOT78A
(3-lead TO-220AB; SC-46;
SFM3)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BUK9520-100B
3-lead
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78A
TO-220AB
TO-220AB;
SC-46;
SFM3
BUK9520-100B_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 6 May 2009
2 of 12
BUK9520-100B
NXP Semiconductors
N-channel TrenchMOS logic level FET
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
100
100
15
Unit
V
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
RGS = 20 kΩ
-
VDGR
VGS
-
V
-15
V
ID
Tmb = 25 °C; VGS = 5 V; see Figure 1; see Figure 3
Tmb = 100 °C; VGS = 5 V; see Figure 1
-
63
A
-
45
A
IDM
Ptot
Tstg
Tj
peak drain current
Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3
-
253
203
175
175
A
total power dissipation Tmb = 25 °C; see Figure 2
storage temperature
-
W
°C
°C
-55
-55
junction temperature
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C
-
-
63
A
A
ISM
tp ≤ 10 µs; pulsed; Tmb = 25 °C
253
Avalanche ruggedness
EDS(AL)S non-repetitive
ID = 63 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 5 V;
-
222
mJ
drain-source avalanche Tj(init) = 25 °C; unclamped
energy
03aa24
03na19
120
120
I
P
der
der
(%)
(%)
80
80
40
40
0
0
0
50
100
150
200
0
50
100
150
200
T
mb
(°C)
T
mb
(°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
BUK9520-100B_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 6 May 2009
3 of 12
BUK9520-100B
NXP Semiconductors
N-channel TrenchMOS logic level FET
003aac769
103
ID
Limit RDSon = VDS / ID
(A)
102
tp
10
=
s
μ
100
s
μ
10
1
DC
1ms
10 ms
100 ms
10-1
1
10
102
103
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from see Figure 4
junction to mounting
base
-
-
0.75
K/W
Rth(j-a)
thermal resistance from vertical in still air; SOT78 package
junction to ambient
-
60
-
K/W
003aac770
1
Zth (j-mb)
(K/W)
δ
= 0.5
0.2
10-1
10-2
10-3
0.1
0.05
0.02
tp
δ =
P
T
single shot
t
tp
T
1e-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK9520-100B_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 6 May 2009
4 of 12
BUK9520-100B
NXP Semiconductors
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
100
90
1
-
-
V
V
V
-
-
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
1.58
2
voltage
see Figure 10
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 10
0.5
-
-
-
-
V
V
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 10
2.3
IDSS
drain leakage current
gate leakage current
VDS = 100 V; VGS = 0 V; Tj = 175 °C
VDS = 100 V; VGS = 0 V; Tj = 25 °C
VDS = 0 V; VGS = -10 V; Tj = 25 °C
VDS = 0 V; VGS = 10 V; Tj = 25 °C
-
-
-
-
-
-
500
1
µA
µA
nA
nA
mΩ
0.05
2
IGSS
100
100
22.3
2
RDSon
drain-source on-state
resistance
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
see Figure 11; see Figure 12
16.4
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 11; see Figure 12
-
-
-
15.6
-
18.5
50
mΩ
mΩ
mΩ
VGS = 5 V; ID = 25 A; Tj = 175 °C;
see Figure 12; see Figure 11
VGS = 5 V; ID = 25 A; Tj = 25 °C;
see Figure 12; see Figure 11
16.2
20
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
ID = 25 A; VDS = 80 V; VGS = 5 V;
Tj = 25 °C; see Figure 14; see Figure 15
-
-
-
-
-
-
53.4
9.5
-
nC
nC
nC
pF
pF
pF
-
21.2
4300
340
150
-
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 16
5657
411
201
Coss
Crss
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 30 V; RL = 1.2 Ω; VGS = 5 V;
RG(ext) = 10 Ω; Tj = 25 °C
-
-
-
-
-
45
-
-
-
-
-
ns
ns
ns
ns
nH
116
173
77
turn-off delay time
fall time
LD
internal drain
inductance
from drain lead 6 mm from package to
centre of die; Tj = 25 °C
4.5
from upper edge of drain mounting base to
centre of die; Tj = 25 °C
-
-
2.5
7.5
-
-
nH
nH
LS
internal source
inductance
from source lead to source bond pad;
Tj = 25 °C
BUK9520-100B_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 6 May 2009
5 of 12
BUK9520-100B
NXP Semiconductors
N-channel TrenchMOS logic level FET
Table 6.
Symbol
Characteristics …continued
Parameter
Conditions
Min
Typ
Max
Unit
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 13
-
0.86
1.2
V
trr
reverse recovery time
recovered charge
IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 30 V; Tj = 25 °C
-
-
80
-
-
ns
Qr
272
nC
03aa36
10-1
ID
003aac771
150
ID
10
VGS (V) =
(A)
4.5
3.4
(A)
10-2
10-3
10-4
10-5
10-6
120
90
3.2
3
min
typ
max
60
30
0
2.7
2.5
0
1
2
3
0
1
2
3
4
5
DS (V)
V
VGS (V)
Fig 5. Sub-threshold drain current as a function of
gate-source voltage
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
003aac772
003aac774
160
28
RDSon
gfs (S)
(m
)
Ω
120
24
20
16
12
80
40
0
0
30
60
90
120
2
4
6
8
10
I
D (A)
VGS (V)
Fig 8. Forward transconductance as a function of
drain current; typical values.
Fig 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
BUK9520-100B_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 6 May 2009
6 of 12
BUK9520-100B
NXP Semiconductors
N-channel TrenchMOS logic level FET
003aac776
03aa33
2.5
VGS(th)
(V)
120
ID
(A)
2
1.5
1
max
90
60
typ
min
T = 150 C
°
j
25 C
°
30
0
0.5
0
-60
0
60
120
180
0
1
2
3
4
T ( C)
°
VGS (V)
j
Fig 10. Gate-source threshold voltage as a function of
junction temperature
Fig 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
03aa29
003aac773
3
50
2.5 2.7
3
3.2
3.4
RDSon
(m
)
Ω
a
40
30
20
10
4.5
10
VGS (V) =
2
1
0
-60
0
60
120
180
0
30
60
90
120
150
ID (A)
T ( C)
°
j
Fig 11. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK9520-100B_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 6 May 2009
7 of 12
BUK9520-100B
NXP Semiconductors
N-channel TrenchMOS logic level FET
003aac778
120
V
DS
IS
(A)
I
D
90
60
V
GS(pl)
V
GS(th)
V
GS
Q
GS1
Q
GS2
150 C
°
T = 25 C
°
j
30
0
Q
Q
GD
GS
Q
G(tot)
003aaa508
Fig 14. Gate charge waveform definitions
0
0.5
1
1.5
2
VSD (V)
Fig 13. Source current as a function of source drain
voltage; typical values.
003aac777
003aac775
5
104
°
C
VGS
(V)
Tj = 25
C
(pF)
Cis s
4
3
2
1
0
VDS = 14V
VDS = 80V
103
Coss
Crs s
102
0
20
40
60
G (nC)
10-1
1
10
102
Q
VDS (V)
Fig 15. Gate-source voltage as a function of turn-on
gate charge; typical values.
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK9520-100B_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 6 May 2009
8 of 12
BUK9520-100B
NXP Semiconductors
N-channel TrenchMOS logic level FET
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78A
E
p
A
A
1
q
mounting
base
D
1
D
(1)
L
L
2
1
Q
b
1
L
1
2
3
b
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
b
L
max.
(1)
2
e
A
b
D
E
L
D
L
1
A
c
UNIT
p
q
Q
1
1
1
4.5
4.1
1.39
1.27
0.9
0.6
1.3
1.0
0.7
0.4
15.8
15.2
6.4
5.9
10.3
9.7
15.0
13.5
3.30
2.79
3.8
3.6
3.0
2.7
2.6
2.2
mm
3.0
2.54
Note
1. Terminals in this zone are not tinned.
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
03-01-22
05-03-14
SOT78A
3-lead TO-220AB
SC-46
Fig 17. Package outline SOT78A (3-lead TO-220AB; SC-46; SFM3)
BUK9520-100B_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 6 May 2009
9 of 12
BUK9520-100B
NXP Semiconductors
N-channel TrenchMOS logic level FET
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BUK9520-100B_1
20090506
Product data sheet
-
-
BUK9520-100B_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 6 May 2009
10 of 12
BUK9520-100B
NXP Semiconductors
N-channel TrenchMOS logic level FET
9. Legal information
9.1 Data sheet status
Document status [1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
Applications — Applications that are described herein for any of these
9.2 Definitions
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
9.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
TrenchMOS — is a trademark of NXP B.V.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BUK9520-100B_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 6 May 2009
11 of 12
BUK9520-100B
NXP Semiconductors
N-channel TrenchMOS logic level FET
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .10
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .11
9.1
9.2
9.3
9.4
10
Contact information. . . . . . . . . . . . . . . . . . . . . .11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 6 May 2009
Document identifier: BUK9520-100B_1
相关型号:
BUK9524-55127
TRANSISTOR 45 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power
NXP
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