BUK9520-100B [NXP]

N-channel TrenchMOS logic level FET; N沟道的TrenchMOS逻辑电平FET


型号：	BUK9520-100B
厂家：	NXP
描述：	N-channel TrenchMOS logic level FET N沟道的TrenchMOS逻辑电平FET
文件：	总12页 (文件大小：198K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BUK9520-100B

N-channel TrenchMOS logic level FET

Rev. 01 — 6 May 2009

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

AEC-Q101 compliant

Suitable for logic level gate drive

sources

Low conduction losses due to low

on-state resistance

Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

12 V, 24 V and 42 V loads

Motors, lamps and solenoids

Automotive and general purpose

power switching

1.4 Quick reference data

Table 1.

Quick reference

Symbol Parameter

Conditions

drain-source voltage T_j≥ 25 °C; T_j≤ 175 °C

Min

Typ

Max Unit

V_DS

I_D

100

drain current

V_GS= 5 V; T_mb= 25 °C;

see Figure 1; see Figure 3

P_tot

total power

dissipation

T_mb= 25 °C; see Figure 2

203

222

Avalanche ruggedness

E_DS(AL)Snon-repetitive

drain-source

I_D= 63 A; V_sup≤ 100 V;

R_GS= 50 Ω; V_GS= 5 V;

T_j(init)= 25 °C; unclamped

avalanche energy

Static characteristics

R_DSon

drain-source

on-state resistance

V_GS= 4.5 V; I_D= 25 A;

T_j= 25 °C; see Figure 11;

see Figure 12

16.4 22.3 mΩ

V_GS= 5 V; I_D= 25 A;

16.2 20

mΩ

T_j= 25 °C; see Figure 12;

see Figure 11

BUK9520-100B

NXP Semiconductors

N-channel TrenchMOS logic level FET

2. Pinning information

Table 2.

Pinning information

Symbol Description

Simplified outline

Graphic symbol

gate

drain

source

mounting base; connected to

drain

mbb076

2 3

SOT78A

(3-lead TO-220AB; SC-46;

SFM3)

3. Ordering information

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BUK9520-100B

3-lead

plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78A

TO-220AB

TO-220AB;

SC-46;

SFM3

BUK9520-100B_1

Product data sheet

Rev. 01 — 6 May 2009

2 of 12

BUK9520-100B

NXP Semiconductors

N-channel TrenchMOS logic level FET

4. Limiting values

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_DS

Parameter

Conditions

Min

Max

100

Unit

drain-source voltage

drain-gate voltage

gate-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

R_GS= 20 kΩ

V_DGR

V_GS

-15

I_D

T_mb= 25 °C; V_GS= 5 V; see Figure 1; see Figure 3

T_mb= 100 °C; V_GS= 5 V; see Figure 1

I_DM

P_tot

T_stg

T_j

peak drain current

T_mb= 25 °C; t_p≤ 10 µs; pulsed; see Figure 3

253

203

175

total power dissipation T_mb= 25 °C; see Figure 2

storage temperature

°C

-55

junction temperature

Source-drain diode

I_S

source current

peak source current

T_mb= 25 °C

I_SM

t_p≤ 10 µs; pulsed; T_mb= 25 °C

253

Avalanche ruggedness

E_DS(AL)Snon-repetitive

I_D= 63 A; V_sup≤ 100 V; R_GS= 50 Ω; V_GS= 5 V;

222

drain-source avalanche T_j(init)= 25 °C; unclamped

energy

03aa24

03na19

120

der

(%)

100

150

200

100

150

200

(°C)

Fig 1. Normalized continuous drain current as a

function of mounting base temperature

Fig 2. Normalized total power dissipation as a

function of mounting base temperature

BUK9520-100B_1

Product data sheet

Rev. 01 — 6 May 2009

3 of 12

BUK9520-100B

NXP Semiconductors

N-channel TrenchMOS logic level FET

003aac769

10³

I_D

Limit R_DSon= V_DS/ I_D

(A)

10²

t_p

100

1ms

10 ms

100 ms

10^-1

10²

10³

V_DS(V)

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

5. Thermal characteristics

Table 5.

Symbol

R_th(j-mb)

Thermal characteristics

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from see Figure 4

junction to mounting

base

0.75

K/W

R_th(j-a)

thermal resistance from vertical in still air; SOT78 package

junction to ambient

K/W

003aac770

Z_{th (j-mb)}

(K/W)

= 0.5

0.2

10^-1

10^-2

10^-3

0.1

0.05

0.02

t_p

δ =

single shot

t_p

1e-6

10^-5

10^-4

10^-3

10^-2

10^-1

t_p(s)

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

BUK9520-100B_1

Product data sheet

Rev. 01 — 6 May 2009

4 of 12

BUK9520-100B

NXP Semiconductors

N-channel TrenchMOS logic level FET

6. Characteristics

Table 6.

Symbol

Characteristics

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V_(BR)DSS

drain-source

breakdown voltage

I_D= 0.25 mA; V_GS= 0 V; T_j= 25 °C

I_D= 0.25 mA; V_GS= 0 V; T_j= -55 °C

100

V_GS(th)

gate-source threshold I_D= 1 mA; V_DS= V_GS; T_j= 25 °C;

1.58

voltage

see Figure 10

I_D= 1 mA; V_DS= V_GS; T_j= 175 °C;

see Figure 10

0.5

I_D= 1 mA; V_DS= V_GS; T_j= -55 °C;

see Figure 10

2.3

I_DSS

drain leakage current

gate leakage current

V_DS= 100 V; V_GS= 0 V; T_j= 175 °C

V_DS= 100 V; V_GS= 0 V; T_j= 25 °C

V_DS= 0 V; V_GS= -10 V; T_j= 25 °C

V_DS= 0 V; V_GS= 10 V; T_j= 25 °C

500

µA

mΩ

0.05

I_GSS

100

22.3

R_DSon

drain-source on-state

resistance

V_GS= 4.5 V; I_D= 25 A; T_j= 25 °C;

see Figure 11; see Figure 12

16.4

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

see Figure 11; see Figure 12

15.6

18.5

mΩ

V_GS= 5 V; I_D= 25 A; T_j= 175 °C;

see Figure 12; see Figure 11

V_GS= 5 V; I_D= 25 A; T_j= 25 °C;

see Figure 12; see Figure 11

16.2

Dynamic characteristics

Q_G(tot)

Q_GS

Q_GD

C_iss

total gate charge

gate-source charge

gate-drain charge

input capacitance

output capacitance

I_D= 25 A; V_DS= 80 V; V_GS= 5 V;

T_j= 25 °C; see Figure 14; see Figure 15

53.4

9.5

21.2

4300

340

150

V_GS= 0 V; V_DS= 25 V; f = 1 MHz;

T_j= 25 °C; see Figure 16

5657

411

201

C_oss

C_rss

reverse transfer

capacitance

t_d(on)

t_r

t_d(off)

t_f

turn-on delay time

rise time

V_DS= 30 V; R_L= 1.2 Ω; V_GS= 5 V;

R_G(ext)= 10 Ω; T_j= 25 °C

116

173

turn-off delay time

fall time

L_D

internal drain

inductance

from drain lead 6 mm from package to

centre of die; T_j= 25 °C

4.5

from upper edge of drain mounting base to

centre of die; T_j= 25 °C

2.5

7.5

L_S

internal source

inductance

from source lead to source bond pad;

T_j= 25 °C

BUK9520-100B_1

Product data sheet

Rev. 01 — 6 May 2009

5 of 12

BUK9520-100B

NXP Semiconductors

N-channel TrenchMOS logic level FET

Table 6.

Symbol

Characteristics …continued

Parameter

Conditions

Min

Typ

Max

Unit

Source-drain diode

V_SD

source-drain voltage

I_S= 25 A; V_GS= 0 V; T_j= 25 °C;

see Figure 13

0.86

1.2

t_rr

reverse recovery time

recovered charge

I_S= 20 A; dI_S/dt = -100 A/µs; V_GS= 0 V;

V_DS= 30 V; T_j= 25 °C

Q_r

272

03aa36

10^-1

I_D

003aac771

150

I_D

V_GS(V) =

(A)

4.5

3.4

(A)

10^-2

10^-3

10^-4

10^-5

10^-6

120

3.2

min

typ

max

2.7

2.5

_DS(V)

V_GS(V)

Fig 5. Sub-threshold drain current as a function of

gate-source voltage

Fig 6. Output characteristics: drain current as a

function of drain-source voltage; typical values

003aac772

003aac774

160

R_DSon

gfs (S)

)

120

_D(A)

V_GS(V)

Fig 8. Forward transconductance as a function of

drain current; typical values.

Fig 7. Drain-source on-state resistance as a function

of gate-source voltage; typical values.

BUK9520-100B_1

Product data sheet

Rev. 01 — 6 May 2009

6 of 12

BUK9520-100B

NXP Semiconductors

N-channel TrenchMOS logic level FET

003aac776

03aa33

2.5

V_GS(th)

(V)

120

I_D

(A)

1.5

max

typ

min

T = 150 C

25 C

0.5

-60

120

180

T ( C)

V_GS(V)

Fig 10. Gate-source threshold voltage as a function of

junction temperature

Fig 9. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

03aa29

003aac773

2.5 2.7

3.2

3.4

R_DSon

)

4.5

V_GS(V) =

-60

120

180

120

150

I_D(A)

T ( C)

Fig 11. Drain-source on-state resistance as a function

of drain current; typical values.

Fig 12. Normalized drain-source on-state resistance

factor as a function of junction temperature

BUK9520-100B_1

Product data sheet

Rev. 01 — 6 May 2009

7 of 12

BUK9520-100B

NXP Semiconductors

N-channel TrenchMOS logic level FET

003aac778

120

I_S

(A)

GS(pl)

GS(th)

GS1

GS2

150 C

T = 25 C

G(tot)

003aaa508

Fig 14. Gate charge waveform definitions

0.5

1.5

V_SD(V)

Fig 13. Source current as a function of source drain

voltage; typical values.

003aac777

003aac775

10⁴

V_GS

(V)

T_j= 25

(pF)

C_{is s}

V_DS= 14V

V_DS= 80V

10³

C_oss

C_{rs s}

10²

_G(nC)

10^-1

10²

V_DS(V)

Fig 15. Gate-source voltage as a function of turn-on

gate charge; typical values.

Fig 16. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

BUK9520-100B_1

Product data sheet

Rev. 01 — 6 May 2009

8 of 12

BUK9520-100B

NXP Semiconductors

N-channel TrenchMOS logic level FET

7. Package outline

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB

SOT78A

mounting

base

(1)

10 mm

scale

DIMENSIONS (mm are the original dimensions)

max.

(1)

UNIT

4.5

4.1

1.39

1.27

0.9

0.6

1.3

1.0

0.7

0.4

15.8

15.2

6.4

5.9

10.3

9.7

15.0

13.5

3.30

2.79

3.8

3.6

3.0

2.7

2.6

2.2

3.0

2.54

Note

1. Terminals in this zone are not tinned.

REFERENCES

JEDEC JEITA

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

03-01-22

05-03-14

SOT78A

3-lead TO-220AB

SC-46

Fig 17. Package outline SOT78A (3-lead TO-220AB; SC-46; SFM3)

BUK9520-100B_1

Product data sheet

Rev. 01 — 6 May 2009

9 of 12

BUK9520-100B

NXP Semiconductors

N-channel TrenchMOS logic level FET

8. Revision history

Table 7.

Revision history

Document ID

Release date

Data sheet status

Change notice

Supersedes

BUK9520-100B_1

20090506

Product data sheet

BUK9520-100B_1

Product data sheet

Rev. 01 — 6 May 2009

10 of 12

BUK9520-100B

NXP Semiconductors

N-channel TrenchMOS logic level FET

9. Legal information

9.1 Data sheet status

Document status ^[1][2]

Product status^[3]

Development

Definition

Objective [short] data sheet

This document contains data from the objective specification for product development.

This document contains data from the preliminary specification.

This document contains the product specification.

Preliminary [short] data sheet Qualification

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term 'short data sheet' is explained in section "Definitions".

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nxp.com.

Applications — Applications that are described herein for any of these

9.2 Definitions

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall prevail.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conflict between information in this document and such

terms and conditions, the latter will prevail.

9.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

No offer to sell or license — Nothing in this document may be interpreted or

construed as an offer to sell products that is open for acceptance or the grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Export control — This document as well as the item(s) described herein may

be subject to export control regulations. Export might require a prior

authorization from national authorities.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

9.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

TrenchMOS — is a trademark of NXP B.V.

10. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

BUK9520-100B_1

Product data sheet

Rev. 01 — 6 May 2009

11 of 12

BUK9520-100B

NXP Semiconductors

N-channel TrenchMOS logic level FET

11. Contents

Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1

1.2

1.3

1.4

General description . . . . . . . . . . . . . . . . . . . . . .1

Features and benefits. . . . . . . . . . . . . . . . . . . . .1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Quick reference data . . . . . . . . . . . . . . . . . . . . .1

Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

Ordering information. . . . . . . . . . . . . . . . . . . . . .2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3

Thermal characteristics . . . . . . . . . . . . . . . . . . .4

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5

Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9

Revision history. . . . . . . . . . . . . . . . . . . . . . . . .10

Legal information. . . . . . . . . . . . . . . . . . . . . . . .11

Data sheet status . . . . . . . . . . . . . . . . . . . . . . .11

Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .11

9.1

9.2

9.3

9.4

Contact information. . . . . . . . . . . . . . . . . . . . . .11

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 6 May 2009

Document identifier: BUK9520-100B_1

BUK9520-100B [NXP]

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