BUK98180-100A [NXP]
TrenchMOS⑩ logic level FET; 的TrenchMOS ™逻辑电平FET
| 型号： | BUK98180-100A |
| 厂家： | 
NXP |
| 描述： | TrenchMOS⑩ logic level FET |
| 文件： | 总13页 (文件大小：277K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUK98180-100A
TrenchMOS™ logic level FET
Rev. 02 — 18 May 2001
Product data
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™1 technology, featuring very low on-state resistance.
Product availability:
BUK98180-100A in SOT223 (SC-73).
2. Features
■ TrenchMOS™ technology
■ Q101 compliant
■ 150 °C rated
■ Logic level compatible.
3. Applications
■ Automotive and general purpose power switching
◆ 12 V, 24 V and 42 V loads
c
c
◆ Motors, lamps and solenoids.
4. Pinning information
Table 1: Pinning - SOT223 (SC-73), simplified outline and symbol
Pin
1
Description
gate (g)
Simplified outline
Symbol
4
d
s
2
drain (d)
3
source (s)
drain (d)
g
4
1
2
3
MBB076
MSB002 - 1
Top view
SOT223 (SC-73)
1. TrenchMOS is a trademark of Royal Philips Electronics.
BUK98180-100A
Philips Semiconductors
TrenchMOS™ logic level FET
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
Conditions
Typ
−
Max
100
4.6
8
Unit
V
VDS
ID
drain-source voltage (DC)
drain current (DC)
Tsp = 25 °C; VGS = 5 V
Tsp = 25 °C
−
A
Ptot
Tj
total power dissipation
junction temperature
−
W
−
150
180
201
173
°C
RDSon
drain-source on-state resistance
Tj = 25 °C; VGS = 5 V; ID = 5 A
Tj = 25 °C; VGS = 4.5 V; ID = 5 A
Tj = 25 °C; VGS = 10 V; ID = 5 A
153
−
mΩ
mΩ
mΩ
147
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
−
Max
100
100
±10
±15
4.6
3
Unit
V
VDS
VDGR
VGS
VGSM
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
non-repetitive gate-source voltage
drain current (DC)
RGS = 20 kΩ
−
V
−
V
tp ≤ 50 µs
−
V
Tsp = 25 °C; VGS = 5 V; Figure 2 and 3
Tsp = 100 °C; VGS = 5 V; Figure 2
−
A
−
A
IDM
peak drain current
Tsp = 25 °C; pulsed; tp ≤ 10 µs;
−
18
A
Figure 3
Ptot
Tstg
Tj
total power dissipation
storage temperature
Tsp = 25 °C; Figure 1
−
8
W
−55
−55
+150
+150
°C
°C
operating junction temperature
Source-drain diode
IDR
reverse drain current (DC)
pulsed reverse drain current
Tsp = 25 °C
−
−
4.6
18
A
A
IDRM
Tsp = 25 °C; pulsed; tp ≤ 10 µs
Avalanche ruggedness
WDSS
non-repetitive avalanche energy
unclamped inductive load; ID = 4 A;
−
16
mJ
VDS ≤ 100 V; VGS = 5 V; RGS = 50 Ω;
starting Tsp = 25 °C
9397 750 08277
© Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 02 — 18 May 2001
2 of 13
BUK98180-100A
Philips Semiconductors
TrenchMOS™ logic level FET
03aa25
03aa17
120
100
80
60
40
20
0
120
P
I
der
(%)
100
der
(%)
80
60
40
20
0
0
25
50
75
100 125 150 175
o
0
25
50
75
100 125 150 175
o
T
( C)
sp
T
( C)
sp
V
GS ≥ 4.5 V
Ptot
Pder
=
× 100%
----------------------
P
ID
°
tot(25 C)
Ider
=
× 100%
------------------
I
°
D(25 C)
Fig 1. Normalized total power dissipation as a
function of solder point temperature.
Fig 2. Normalized continuous drain current as a
function of solder point temperature.
03nc34
2
10
I
D
(A)
R
DSon
= V / I
DS D
t
= 10 us
10
1
p
100 us
1 ms
D.C.
10 ms
t
p
P
δ =
100 ms
-1
T
10
10
t
t
p
T
-2
10
-1
2
3
10
1
10
10
V
(V)
DS
Tamb = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 08277
© Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 02 — 18 May 2001
3 of 13
BUK98180-100A
Philips Semiconductors
TrenchMOS™ logic level FET
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol
Rth(j-a)
Parameter
Conditions
Value
70
Unit
K/W
K/W
thermal resistance from junction to ambient
Rth(j-sp)
thermal resistance from junction to solder
point
Figure 4
15
7.1 Transient thermal impedance
03nc35
2
10
Z
th(j-sp)
(K/W)
10
1
δ = 0.5
0.2
0.1
0.05
0.02
t
p
P
δ =
-1
T
10
Single Shot
t
t
p
T
-2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
2
10
1
10
t
(s)
p
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
9397 750 08277
© Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 02 — 18 May 2001
4 of 13
BUK98180-100A
Philips Semiconductors
TrenchMOS™ logic level FET
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol
Static characteristics
V(BR)DSS drain-source breakdown
voltage
Parameter
Conditions
Min
Typ
Max
Unit
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
100
89
−
−
−
−
V
V
Tj = −55 °C
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS = VGS
Figure 9
Tj = 25 °C
;
1
1.5
−
2
V
V
V
Tj = 150 °C
Tj = −55 °C
0.6
−
−
−
2.3
IDSS
drain-source leakage current VDS = 100 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
−
−
−
0.05
−
10
µA
µA
nA
500
100
IGSS
gate-source leakage current VGS = ±10 V; VDS = 0 V
2
RDSon
drain-source on-state
resistance
VGS = 5 V; ID = 5 A;
Figure 7 and 8
Tj = 25 °C
−
−
−
−
153
−
180
389
201
173
mΩ
mΩ
mΩ
mΩ
Tj = 150 °C
VGS = 4.5 V; ID = 5 A;
VGS = 10 V; ID = 5 A;
−
147
Dynamic characteristics
Ciss
Coss
Crss
td(on)
tr
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
−
−
−
−
−
−
−
464
60
36
7
619
72
50
−
pF
pF
pF
ns
ns
ns
ns
VDD = 30 V; RL = 1.2 Ω;
VGS = 5 V; RG = 10 Ω
89
18
25
−
td(off)
tf
turn-off delay time
fall time
−
−
9397 750 08277
© Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 02 — 18 May 2001
5 of 13
BUK98180-100A
Philips Semiconductors
TrenchMOS™ logic level FET
Table 5: Characteristics…continued
Tj = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Source-drain diode
VSD
source-drain (diode forward) IS = 5 A; VGS = 0 V;
−
0.85
1.2
V
voltage
Figure 15
trr
reverse recovery time
recovered charge
IS = 20 A; dIS/dt = −100 A/µs
VGS = −10 V; VDS = 30 V
−
−
49
−
−
ns
Qr
130
nC
03nc31
25
03nc30
180
DSon
(mΩ)
175
V
(V) =
10
GS
R
I
D
(A)
5
4
20
15
10
5
170
165
160
155
150
145
3
2.2
0
0
2
4
6
8
10
(V)
4
6
8
10
V
V
(V)
GS
DS
Tj = 25 °C
Tj = 25 °C; ID = 5 A
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
03ne90
03nc32
2.4
250
a
R
2.2
DSon
(mΩ)
V
(V) =
3
GS
3.2
2
1.8
1.6
1.4
1.2
1
200
3.4
3.6
3.8
4
5
150
100
0.8
0.6
0.4
0.2
0
0
2
4
6
8
10
12
-60
-20
20
60
100
140
180
I
(A)
D
o
T ( C)
j
Tj = 25 °C
RDSon
a =
---------------------------
RDSon(25 C)
°
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 08277
© Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 02 — 18 May 2001
6 of 13
BUK98180-100A
Philips Semiconductors
TrenchMOS™ logic level FET
03aa33
03aa36
2.5
-1
10
I
V
GS(th)
D
(V)
2
(A)
-2
10
10
10
10
10
-3
-4
-5
-6
1.5
1
min
typ
max
0.5
0
-60
0
60
120
180
0
0.5
1
1.5
2
2.5
V
3
(V)
T (oC)
j
GS
ID = 1 mA; VDS = VGS
Tj = 25 °C; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03nc28
1200
C (pF)
1000
18
16
14
12
10
8
g
fs
(S)
800
600
Ciss
400
6
4
200
2
Coss
0
Crss
2
0
-2
-1
10
10
1
10
10
(V)
0
5
10
15
I
(A)
V
DS
D
Tj = 25 °C; VDS = 25 V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 08277
© Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 02 — 18 May 2001
7 of 13
BUK98180-100A
Philips Semiconductors
TrenchMOS™ logic level FET
I
18
16
14
12
10
8
D
(A)
5
V
(V)
GS
V
= 14 V
DD
4
3
2
1
0
V
= 80 V
DD
6
4
o
T = 150
C
j
2
o
T = 25
C
j
0
0
1
2
3
4
0
2
4
6
8
10
(nC)
V
(V)
GS
Q
G
VDS = 25 V
Tj = 25 °C; ID = 5 A
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
03nc26
15
I
S
(A)
10
o
T = 150
C
j
5
0
o
T = 25
C
j
0.0
0.2
0.4
0.6
0.8
1.0
V
1.2
(V)
SD
VGS = 0 V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
9397 750 08277
© Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 02 — 18 May 2001
8 of 13
BUK98180-100A
Philips Semiconductors
TrenchMOS™ logic level FET
9. Package outline
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
SOT223
D
B
E
A
X
c
y
H
v
M
A
E
b
1
4
Q
A
A
1
L
1
2
3
p
e
b
p
w
M
B
detail X
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
1
E
1.8
1.5
0.10 0.80
0.01 0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
7.3
6.7
1.1
0.7
0.95
0.85
mm
4.6
2.3
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SC-73
97-02-28
99-09-13
SOT223
Fig 16. SOT223 (SC-73).
9397 750 08277
© Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 02 — 18 May 2001
9 of 13
BUK98180-100A
Philips Semiconductors
TrenchMOS™ logic level FET
10. Soldering
7.00
3.85
3.60
3.50
0.30
solder lands
solder resist
occupied area
solder paste
1.20
(4x)
4
7.40
4.80
3.90
7.65
1
2
3
MSA443
1.20 (3x)
1.30 (3x)
5.90
6.15
Dimensions in mm.
Fig 17. Reflow soldering footprint for SOT223 (SC-73).
11. Revision history
Table 6: Revision history
Rev Date
CPCN
Description
Product data; initial version.
01 20001003
02 20010518
-
-
Product data; second version. Updated Figure 13, Figure 8, Figure 3, and Figure 4.
9397 750 08277
© Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 02 — 18 May 2001
10 of 13
BUK98180-100A
Philips Semiconductors
TrenchMOS™ logic level FET
12. Data sheet status
[1]
[2]
Data sheet status
Product status
Definition
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips Semiconductors
reserves the right to change the specification in any manner without notice.
Preliminary data
Product data
Qualification
Production
This data sheet contains data from the preliminary specification. Supplementary data will be published at a
later date. Philips Semiconductors reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.
This data sheet contains data from the product specification. Philips Semiconductors reserves the right to
make changes at any time in order to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change Notification (CPCN) procedure
SNW-SQ-650A.
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
13. Definitions
14. Disclaimers
Short-form specification — The data in
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
a
short-form specification is
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
9397 750 08277
© Philips Electronics N.V. 2001 All rights reserved.
Product data
Rev. 02 — 18 May 2001
11 of 13
BUK98180-100A
Philips Semiconductors
TrenchMOS™ logic level FET
Philips Semiconductors - a worldwide company
Argentina: see South America
Netherlands: Tel. +31 40 278 2785, Fax. +31 40 278 8399
New Zealand: Tel. +64 98 49 4160, Fax. +64 98 49 7811
Norway: Tel. +47 22 74 8000, Fax. +47 22 74 8341
Philippines: Tel. +63 28 16 6380, Fax. +63 28 17 3474
Poland: Tel. +48 22 5710 000, Fax. +48 22 5710 001
Portugal: see Spain
Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139
Austria: Tel. +43 160 101, Fax. +43 160 101 1210
Belarus: Tel. +375 17 220 0733, Fax. +375 17 220 0773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Tel. +359 268 9211, Fax. +359 268 9102
Canada: Tel. +1 800 234 7381
Romania: see Italy
Russia: Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
China/Hong Kong: Tel. +852 2 319 7888, Fax. +852 2 319 7700
Colombia: see South America
Czech Republic: see Austria
Slovenia: see Italy
Denmark: Tel. +45 3 288 2636, Fax. +45 3 157 0044
Finland: Tel. +358 961 5800, Fax. +358 96 158 0920
France: Tel. +33 1 4728 6600, Fax. +33 1 4728 6638
Germany: Tel. +49 40 23 5360, Fax. +49 402 353 6300
Hungary: Tel. +36 1 382 1700, Fax. +36 1 382 1800
India: Tel. +91 22 493 8541, Fax. +91 22 493 8722
Indonesia: see Singapore
South Africa: Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Tel. +55 11 821 2333, Fax. +55 11 829 1849
Spain: Tel. +34 33 01 6312, Fax. +34 33 01 4107
Sweden: Tel. +46 86 32 2000, Fax. +46 86 32 2745
Switzerland: Tel. +41 14 88 2686, Fax. +41 14 81 7730
Taiwan: Tel. +886 22 134 2451, Fax. +886 22 134 2874
Thailand: Tel. +66 23 61 7910, Fax. +66 23 98 3447
Turkey: Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: Tel. +1 800 234 7381
Ireland: Tel. +353 17 64 0000, Fax. +353 17 64 0200
Israel: Tel. +972 36 45 0444, Fax. +972 36 49 1007
Italy: Tel. +39 039 203 6838, Fax +39 039 203 6800
Japan: Tel. +81 33 740 5130, Fax. +81 3 3740 5057
Korea: Tel. +82 27 09 1412, Fax. +82 27 09 1415
Malaysia: Tel. +60 37 50 5214, Fax. +60 37 57 4880
Mexico: Tel. +9-5 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553
Middle East: see Italy
For all other countries apply to: Philips Semiconductors,
Marketing Communications,
Internet: http://www.semiconductors.philips.com
Building BE, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. +31 40 272 4825
(SCA72)
9397 750 08277
© Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 02 — 18 May 2001
12 of 13
BUK98180-100A
Philips Semiconductors
TrenchMOS™ logic level FET
Contents
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2
3
4
5
6
7
7.1
8
9
10
11
12
13
14
© Philips Electronics N.V. 2001.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 18 May 2001
Document order number: 9397 750 08277
相关型号：
BUK9830-30115
TRANSISTOR 5.9 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
NXP
BUK9830-30135
TRANSISTOR 5.9 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
NXP
©2020 ICPDF网 联系我们和版权申明