BUT12F [NXP]
Silicon diffused power transistors; 扩散硅功率晶体管型号: | BUT12F |
厂家: | NXP |
描述: | Silicon diffused power transistors |
文件: | 总12页 (文件大小:80K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BUT12F; BUT12AF
Silicon diffused power transistors
1997 Aug 13
Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT12F; BUT12AF
DESCRIPTION
PINNING
PIN
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT186 plastic
package.
DESCRIPTION
1
2
base
collector
emitter
3
mb
mounting base; electrically isolated from all pins
APPLICATIONS
• Converters
• Inverters
handbook, halfpage
• Switching regulators
• Motor control systems.
handbook, halfpage
2
3
1
MBB008
1
2 3
MBK109
Fig.1 Simplified outline (SOT186) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
collector-emitter peak voltage
CONDITIONS
MAX.
UNIT
VCESM
VBE = 0
BUT12F
850
V
V
BUT12AF
1000
VCEO
collector-emitter voltage
BUT12F
open base
400
450
1.5
V
V
V
BUT12AF
VCEsat
ICsat
collector-emitter saturation voltage
collector saturation current
BUT12F
see Figs 7 and 9
6
A
BUT12AF
5
A
IC
collector current (DC)
collector current (peak value)
total power dissipation
fall time
see Figs 2 and 4
see Fig.2
8
A
ICM
Ptot
tf
20
23
A
Th ≤ 25 °C; see Fig.3
W
µs
resistive load; see Figs 11 and 12 0.8
1997 Aug 13
1
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT12F; BUT12AF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to external heatsink note 1
note 2
CONDITIONS
VALUE
5.5
UNIT
K/W
K/W
K/W
Rth j-h
3.9
Rth j-a
thermal resistance from junction to ambient
55
Notes
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
2. Mounted with heatsink compound and 30 ±5 N force on centre of package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCESM
collector-emitter peak voltage
BUT12F
VBE = 0
−
−
850
V
V
BUT12AF
1000
VCEO
collector-emitter voltage
BUT12F
open base
−
−
400
450
V
V
BUT12AF
ICsat
collector saturation current
BUT12F
−
−
−
−
−
−
−
6
A
A
A
A
A
A
BUT12AF
5
IC
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
total power dissipation
storage temperature
junction temperature
see Figs 2 and 4
see Fig.2
8
ICM
IB
20
4
IBM
Ptot
Tstg
Tj
6
Th ≤ 25 °C; see Fig.3; note 1
23
+150
150
W
−65
°C
°C
−
Note
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
ISOLATION CHARACTERISTICS
SYMBOL
VisolM
PARAMETER
TYP.
MAX.
UNIT
isolation voltage from all terminals to external heatsink (peak value)
isolation capacitance from collector to external heatsink
−
−
1500
12
V
Cisol
pF
1997 Aug 13
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT12F; BUT12AF
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
VCEOsust
collector-emitter sustaining voltage IC = 100 mA; IBoff = 0; L = 25 mH;
see Figs 5 and 6
BUT12F
400
−
−
−
−
V
V
BUT12AF
450
VCEsat
collector-emitter saturation voltage
BUT12F
IC = 6 A; IB = 1.2 A; see
Figs 7 and 9
−
−
−
−
1.5
1.5
V
V
BUT12AF
IC = 5 A; IB = 1 A; see
Figs 7 and 9
VBEsat
base-emitter saturation voltage
BUT12F
IC = 6 A; IB = 1.2 A; see Fig.7
IC = 5 A; IB = 1 A; see Fig.7
VCE = VCESMmax; VBE = 0; note 1
−
−
−
−
−
−
−
−
1.5
1.5
1
V
BUT12AF
V
ICES
collector-emitter cut-off current
mA
mA
VCE = VCESMmax; VBE = 0;
3
Tj = 125 °C; note 1
IEBO
hFE
emitter-base cut-off current
DC current gain
VEB = 9 V; IC = 0
−
−
10
35
35
mA
VCE = 5 V; IC = 10 mA; see Fig.10 10
18
20
VCE = 5 V; IC = 1 A; see Fig.10
10
Switching times resistive load (see Fig.12)
ton
turn-on time
BUT12F
I
Con = 6 A; IBon = −IBoff = 1.2 A
−
−
−
−
1
1
µs
µs
BUT12AF
storage time
BUT12F
ICon = 5 A; IBon = −IBoff = 1 A
ts
ICon = 6 A; IBon = −IBoff = 1.2 A
−
−
−
−
4
4
µs
µs
BUT12AF
fall time
I
Con = 5 A; IBon = −IBoff = 1 A
tf
BUT12F
I
Con = 6 A; IBon = −IBoff = 1.2 A
Con = 5 A; IBon = −IBoff = 1 A
−
−
−
−
0.8
0.8
µs
µs
BUT12AF
I
Switching times inductive load (see Fig.14)
ts
storage time
BUT12F
I
Con = 6 A; IBon = 1.2 A;
−
−
1.9
1.9
2.5
2.5
µs
µs
VCL = 250 V; Tc = 100 °C
Con = 5 A; IBon = 1 A;
VCL = 300 V; Tc = 100 °C
BUT12AF
I
tf
fall time
BUT12F
I
Con = 6 A; IBon = 1.2 A;
VCL = 250 V; Tc = 100 °C
Con = 5 A; IBon = 1 A;
VCL = 300 V; Tc = 100 °C
−
−
200
200
300
300
ns
ns
BUT12AF
I
Note
1. Measured with a half-sinewave voltage (curve tracer).
1997 Aug 13
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT12F; BUT12AF
MGB935
2
10
I
C
(A)
I
CM max
I
10
C max
II
1
I
−1
10
DC
−2
−3
−4
10
10
10
BUT12F
BUT12AF
2
3
4
1
10
10
10
10
V
(V)
CE
Tmb < 25 °C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
Fig.2 Forward bias SOAR.
4
1997 Aug 13
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT12F; BUT12AF
MGB892
MGK674
10
120
handbook, halfpage
handbook, halfpage
P
tot max
I
C
(%)
(A)
80
5
40
BUT12F
BUT12AF
0
0
0
400
800
1200
(V)
0
50
100
150
V
o
CE
T
( C)
h
VBE = −1 to −5 V; Tmb = 100 °C.
Fig.3 Power derating curve.
Fig.4 Reverse bias SOAR.
MGE239
I
handbook, halfpage
C
handbook, halfpage
+ 50 V
(mA)
100 to 200 Ω
250
L
200
100
0
horizontal
oscilloscope
vertical
300 Ω
1 Ω
V
(V)
CE
6 V
min
V
30 to 60 Hz
MGE252
CEOsust
Fig.5 Test circuit for collector-emitter
sustaining voltage.
Fig.6 Oscilloscope display for collector-emitter
sustaining voltage.
1997 Aug 13
5
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT12F; BUT12AF
MGB914
2.0
V
BEsat
V
CEsat
(V)
1.5
1.0
(1)
(2)
0.5
(3)
(4)
0
10
−1
2
1
10
10
I
(A)
C
IC/IB = 5.
(1) VBE; Tj = 25 °C.
(2) BE; Tj = 100 °C.
(3) VCE; Tj = 100 °C.
(4) CE; Tj = 25 °C.
V
V
Fig.7 Base-emitter and collector-emitter saturation voltages as functions of base current; typical values.
MGB911
1.6
V
BE
(V)
1.4
(1)
(2)
1.2
1.0
(3)
0.8
0
0.5
1
1.5
2
2.5
3
I
(A)
B
(2) IC = 6 A.
(3) IC = 3 A.
Tj = 25 °C.
(1) IC = 8 A.
Fig.8 Base-emitter voltage as a function of collector current; typical values.
6
1997 Aug 13
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT12F; BUT12AF
MGB872
MBC096
2
10
10
handbook, halfpage
handbook, halfpage
(1)
(2) (3)
V
CEsat
(V)
h
FE
V
= 5 V
1V
CE
10
1
−1
1
10
10
−2
−1
2
−2
−1
10
1
10
10
10
10
1
10
I
(A)
I
(A)
B
C
(1) IC = 3 A.
(2) IC = 6 A.
(3) IC = 8 A.
Tj = 25 °C; solid line: typical values; dotted line: maximum values.
Fig.9 Collector-emitter saturation voltage as a
function of base current.
Fig.10 DC current gain; typical values.
MBB731
handbook, halfpage
90%
t ≤30 ns
r
I
B on
I
B
10%
V
handbook, halfpage
CC
t
I
I
B off
R
L
V
R
IM
0
B
C on
D.U.T.
90%
t
p
I
C
MGE244
T
10%
t
t
f
t
on
t
s
VCC = 250 V; tp = 20 µs; VIM = −6 to +8 V; tp/T = 0.01.
tr ≤ 20 ns.
The values of RB and RL are selected in accordance with ICon and
IBon requirements.
Fig.12 Switching time waveforms with
resistive load.
Fig.11 Test circuit resistive load.
1997 Aug 13
7
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT12F; BUT12AF
handbook, halfpage
90%
t
r
I
B on
I
B
10%
V
C
handbook, halfpage
CC
t
L
−I
B off
V
+I
CL
B
L
B
I
C on
D.U.T.
90%
−V
BE
MGE246
I
C
10%
t
t
f
t
s
t
VCL = up to 1000 V; VCC = 30 V; VBE = −1 to −5 V; LB = 1 µH;
LC = 200 µH.
MGE238
off
Fig.13 Test circuit inductive load and reverse
bias SOAR.
Fig.14 Switching times waveforms with
inductive load.
1997 Aug 13
8
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT12F; BUT12AF
PACKAGE OUTLINE
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3 lead TO-220 exposed tabs
SOT186
E
E
1
A
P
m
A
1
q
D
1
D
L
1
Q
b
1
L
L
2
1
2
3
b
c
w
M
e
e
1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
A
A
b
c
D
D
1
E
E
e
e
L
L
1
m
P
Q
q
w
b
UNIT
mm
L
2
1
1
1
1
1.5
1.3
14.3
13.5
4.8
4.0
1.4
1.2
4.4
4.0
2.9
2.5
0.9
0.7
4.4
4.0
0.55 17.0
0.38 16.4
7.9 10.2
7.5 9.6
5.7
5.3
0.9
0.5
3.2
3.0
5.08
2.54
10
0.4
Note
1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
97-06-11
SOT186
TO-220
1997 Aug 13
9
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT12F; BUT12AF
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Aug 13
10
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© Philips Electronics N.V. 1997
SCA55
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137067/00/01/pp11
Date of release: 1997 Aug 13
Document order number: 9397 750 02715
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