BUW13AW [NXP]
Silicon diffused power transistors; 扩散硅功率晶体管
| 型号： | BUW13AW |
| 厂家： | 
NXP |
| 描述： | Silicon diffused power transistors |
| 文件： | 总12页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BUW13W; BUW13AW
Silicon diffused power transistors
1997 Aug 13
Product specification
File under Discrete Semiconductors, SC06
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13W; BUW13AW
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT429 package.
ge
APPLICATIONS
2
• Converters
• Inverters
1
• Switching regulators
• Motor control systems.
MBB008
3
1
2
3
PINNING
MBK117
PIN
DESCRIPTION
base
1
2
collector; connected to
mounting base
Fig.1 Simplified outline (SOT429) and symbol.
3
emitter
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VCESM
collector-emitter peak voltage
BUW13W
VBE = 0
850
V
V
BUW13AW
1000
VCEO
collector-emitter voltage
BUW13W
open base
400
450
1.5
15
V
BUW13AW
V
VCEsat
IC
collector-emitter saturation voltage
collector current (DC)
collector current (peak value)
total power dissipation
fall time
see Figs 7 and 9
see Figs 2 and 4
see Fig 2
V
A
ICM
Ptot
tf
30
A
Tmb ≤ 25 °C; see Fig.3
175
0.8
W
µs
resistive load; see Figs 11 and 12
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
0.7
UNIT
Rth j-mb
thermal resistance from junction to mounting base
K/W
1997 Aug 13
1
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13W; BUW13AW
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-emitter peak voltage
BUW13W
CONDITIONS
MIN.
MAX.
UNIT
VCESM
VBE = 0
−
−
850
V
V
BUW13AW
1000
VCEO
collector-emitter voltage
BUW13W
open base
−
−
−
−
−
−
−
400
450
15
V
BUW13AW
V
IC
collector current (DC)
collector current (peak value)
base current (DC)
see Figs 2 and 4
A
ICM
IB
tp < 2 ms; see Fig 2
30
A
6
A
IBM
Ptot
Tstg
Tj
base current (peak value)
total power dissipation
storage temperature
junction temperature
tp < 2 ms
9
A
Tmb ≤ 25 °C; see Fig.3
175
+150
150
W
°C
°C
−65
−
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCEOsust
collector-emitter sustaining voltage IC = 100 mA; IBoff = 0;
L = 25 mH; see Figs 5 and 6
BUW13W
400
450
−
−
−
V
V
BUW13AW
−
VCEsat
collector-emitter saturation voltage
BUW13W
IC = 10 A; IB = 2 A; see
Figs 7 and 9
−
−
−
−
1.5
1.5
V
V
BUW13AW
IC = 8 A; IB = 1.6 A; see
Figs 7 and 9
VBEsat
base-emitter saturation voltage
BUW13W
IC = 10 A; IB = 2 A; see Fig.7
IC = 8 A; IB = 1.6 A; see Fig.7
VCE = VCESMmax; VBE = 0; note 1
−
−
−
−
−
−
−
−
1.6
1.6
1
V
BUW13AW
V
ICES
collector-emitter cut-off current
mA
mA
VCE = VCESMmax; VBE = 0;
4
Tj = 125 °C; note 1
IEBO
hFE
emitter-base cut-off current
DC current gain
VEB = 9 V; IC = 0
−
−
10
35
mA
VCE = 5 V; IC = 20 mA;
see Fig.10
10
18
VCE = 5 V; IC = 1.5 A;
10
20
35
see Fig.10
1997 Aug 13
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13W; BUW13AW
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Switching times resistive load (see Figs 11 and 12)
ton
turn-on time
BUW13W
BUW13AW
storage time
BUW13W
BUW13AW
fall time
I
Con = 10 A; IBon = −IBoff = 2 A
Con = 8 A; IBon = −IBoff = 1.6 A
−
−
−
−
1
µs
I
1
µs
ts
ICon = 10 A; IBon = −IBoff = 2 A
−
−
−
−
4
4
µs
µs
ICon = 8 A; IBon = −IBoff = 1.6 A
tf
BUW13W
BUW13AW
I
Con = 10 A; IBon = −IBoff = 2 A
Con = 8 A; IBon = −IBoff = 1.6 A
−
−
−
−
0.8
0.8
µs
µs
I
Switching times inductive load (see Figs 13 and 14)
ts
storage time
BUW13W
I
I
I
I
Con = 10 A; IB = 2 A
−
−
−
−
2.3
2.5
2.3
2.5
3
µs
µs
µs
µs
Con = 10 A; IB = 2 A; Tj = 100 °C
Con = 8 A; IB = 1.6 A
3.2
3
BUW13AW
Con = 8 A; IB = 1.6 A;
3.2
Tj = 100 °C
tf
fall time
BUW13W
I
Con = 10 A; IB = 2 A
−
−
−
−
80
150
300
150
300
ns
ns
ns
ns
ICon = 10 A; IB = 2 A; Tj = 100 °C
140
80
BUW13AW
I
I
Con = 8 A; IB = 1.6 A
Con = 8 A; IB = 1.6 A;
140
Tj = 100 °C
Note
1. Measured with a half-sinewave voltage (curve tracer).
1997 Aug 13
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13W; BUW13AW
MGB926
3
10
I
C
(A)
2
10
I
CM max
I
C max
10
(1)
II
1
III
I
(2)
−1
10
DC
BUW13W
BUW13AW
−2
10
IV
−3
10
2
3
4
10
1
10
10
10
V
(V)
CE
T
mb ≤ 25 °C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
III - Area of permissible operation during turn-on in single transistor converters, provided RBE ≤ 100 Ω and tp ≤ 0.6 µs.
IV - Repetitive pulse operation in this region is permissible provided VBE ≤ 0 and tp ≤ 5 ms.
(1) Ptot max line.
(2) Second breakdown limits.
Fig.2 Forward bias SOAR.
1997 Aug 13
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13W; BUW13AW
MGD283
MGB897
120
20
handbook, halfpage
handbook, halfpage
P
tot max
(%)
I
C
(A)
80
10
40
BUW13W
BUW13AW
0
0
0
400
800
1200
(V)
0
50
100
150
V
o
CE
T
( C)
mb
Fig.3 Power derating curve.
Fig.4 Reverse bias SOAR.
MGE239
I
handbook, halfpage
handbook, halfpage
C
+ 50 V
(mA)
100 to 200 Ω
250
L
200
100
0
horizontal
oscilloscope
vertical
300 Ω
1 Ω
6 V
V
(V)
CE
min
V
30 to 60 Hz
MGE252
CEOsust
Fig.5 Test circuit for collector-emitter
sustaining voltage.
Fig.6 Oscilloscope display for collector-emitter
sustaining voltage.
1997 Aug 13
5
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13W; BUW13AW
MGB915
2.0
V
BEsat
V
CEsat
(V)
1.5
1.0
(1)
(2)
0.5
(3)
(4)
0
10
−1
2
1
10
10
I
(A)
C
IC/IB = 5.
(1) VBE; Tj = 25 °C.
(2) VBE; Tj = 100 °C.
(3) VCE; Tj = 100 °C.
(4) VCE; Tj = 25 °C.
Fig.7 Base-emitter and collector-emitter saturation voltages as functions of collector current; typical values.
MGB912
1.6
V
BE
(V)
1.4
(1)
(2)
1.2
1.0
0.8
(3)
0
1
2
3
4
5
6
I
(A)
B
Tj = 25 °C.
(2) IC = 10 A.
(3) IC = 5 A.
(1) IC = 15 A.
Fig.8 Base-emitter voltage as a function of base current; typical values.
6
1997 Aug 13
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13W; BUW13AW
MGB871
MBC096
2
10
10
handbook, halfpage
handbook, halfpage
(1)
(2)
(3)
V
CEsat
(V)
h
FE
V
= 5 V
1V
CE
10
1
−1
1
10
10
−2
−1
2
−2
−1
10
1
10
10
10
10
1
10
I
(A)
I
(A)
C
B
(1) IC = 5 A.
(2) IC = 10 A.
(3) IC = 15 A.
Tj = 25 °C; solid line: typical values; dotted line: maximum values.
Fig.9 Collector-emitter saturation voltage as a
function of base current.
Fig.10 DC current gain; typical values.
handbook, halfpage
MBB730
t
r
−I
B on
90%
−I
B
V
handbook, halfpage
CC
10%
t
R
−I
L
B off
V
R
IM
B
−I
0
D.U.T.
C on
90%
t
p
MGE244
−I
T
C
10%
t
t
f
t
on
t
s
t
off
VCC = 250 V; tp = 20 µs; VIM = −6 to +8 V; tp/T = 0.01.
The values of RB and RL are selected in accordance with ICon and
IBon requirements.
Fig.12 Switching time waveforms with
resistive load.
Fig.11 Test circuit resistive load.
1997 Aug 13
7
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13W; BUW13AW
handbook, halfpage
90%
t
r
I
B on
I
B
10%
V
C
handbook, halfpage
CC
t
L
−I
B off
V
+I
CL
B
L
B
I
C on
D.U.T.
90%
−V
BE
MGE246
I
C
10%
t
t
f
t
s
t
MGE238
off
VCL = 300 V; VCC = 30 V; VBE = −5 V; LB = 1 µH; LC = 200 µH.
Fig.14 Switching time waveforms with
inductive load.
Fig.13 Test circuit inductive load.
1997 Aug 13
8
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13W; BUW13AW
PACKAGE OUTLINE
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-247
SOT429
α
E
P
A
A
1
β
q
S
R
D
Y
(1)
L
1
Q
b
2
L
1
2
3
c
b
1
w
M
b
e
e
0
10
20 mm
scale
DIMENSIONS (mm are the original dimensions)
β
A
A
b
c
D
E
e
L
L
P
Q
q
R
S
w
Y
α
b
b
UNIT
mm
1
1
2
1
1.9
1.7
1.2
0.9
3.7
3.3
2.6
2.4
7.5
7.1
15.7
15.3
6°
4°
17°
13°
5.3
4.7
2.2
1.8
3.2
2.8
0.9
0.6
21
20
16
15
16
15
4.0
3.6
3.5
3.3
5.45
5.3
0.4
Note
1. Terminals are uncontrolled within zone L .
1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT429
TO-247
97-06-11
1997 Aug 13
9
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13W; BUW13AW
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Aug 13
10
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Internet: http://www.semiconductors.philips.com
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1997
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
137067/00/01/pp12
Date of release: 1997 Aug 13
Document order number: 9397 750 02725
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