BUW13F [NXP]
Silicon diffused power transistors; 扩散硅功率晶体管型号: | BUW13F |
厂家: | NXP |
描述: | Silicon diffused power transistors |
文件: | 总16页 (文件大小:109K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BUW13F; BUW13AF
Silicon diffused power transistors
1997 Aug 13
Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13F; BUW13AF
DESCRIPTION
High-voltage, high-speed,
ook, halfpage
glass-passivated NPN power
transistor in a SOT199 package.
APPLICATIONS
handbook, halfpage
2
3
• Converters
• Inverters
1
• Switching regulators
• Motor control systems.
MBB008
PINNING
PIN
DESCRIPTION
base
1
2
3
1
2
collector
emitter
MSB012
Front view
3
mb
mounting base;
Fig.1 Simplified outline (SOT199) and symbol.
electrically isolated
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VCESM
collector-emitter peak voltage
BUW13F
VBE = 0
850
V
V
BUW13AF
1000
VCEO
collector-emitter voltage
BUW13F
open base
400
450
1.5
V
V
V
BUW13AF
VCEsat
ICsat
collector-emitter saturation voltage
collector saturation current
BUW13F
see Figs 8 and 10
10
8
A
BUW13AF
A
IC
collector current (DC)
collector current (peak value)
total power dissipation
fall time
see Figs 3 and 4
15
30
37
0.8
A
ICM
Ptot
tf
tp < 20 ms; see Fig 4
Th ≤ 25 °C; see Fig.2
resistive load; see Fig.13
A
W
µs
1997 Aug 13
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13F; BUW13AF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-h
thermal resistance from junction to external heatsink note 1
note 2
3.4
2.5
35
K/W
K/W
K/W
Rth j-a
thermal resistance from junction to ambient
Notes
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
2. Mounted with heatsink compound and 30 ±5 N force on centre of package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCESM
collector-emitter peak voltage
BUW13F
VBE = 0
−
−
850
V
V
BUW13AF
1000
VCEO
collector-emitter voltage
BUW13F
open base
−
−
400
450
V
V
BUW13AF
ICsat
collector saturation current
BUW13F
−
10
8
A
BUW13AF
−
A
IC
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
total power dissipation
see Figs 3 and 4
−
15
30
6
A
ICM
IB
tp < 20 ms; see Fig 4
−
A
−
A
IBM
Ptot
tp = −20 ms
−
9
A
Th ≤ 25 °C; see Fig.2; note 1
Th ≤ 25 °C; see Fig.2; note 2
−
37
50
+150
150
W
W
°C
°C
−
Tstg
Tj
storage temperature
junction temperature
−65
−
Notes
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
2. Mounted with heatsink compound and 30 ±5 N force on centre of package.
ISOLATION CHARACTERISTICS
SYMBOL
PARAMETER
isolation voltage from all terminals to external heatsink (peak value); note 1 2000
isolation capacitance from collector to external heatsink 21
MAX.
UNIT
VisolM
Cisol
V
pF
Note
1. Repetitive peak operation with RH ≤ 65% under clean and dust-free conditions.
1997 Aug 13
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13F; BUW13AF
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCEOsust
collector-emitter sustaining voltage IC = 100 mA; IBoff = 0;
L = 25 mH; see Figs 6 and 7
BUW13F
400
−
−
−
−
V
V
BUW13AF
450
VCEsat
collector-emitter saturation voltage
BUW13F
IC = 10 A; IB = 2 A; see
Figs 8 and 10
−
−
−
−
1.5
1.5
V
V
BUW13AF
IC = 8 A; IB = 1.6 A; see
Figs 8 and 10
VBEsat
base-emitter saturation voltage
BUW13F
IC = 10 A; IB = 2 A; see Fig.8 −
−
−
1.6
1.6
V
V
BUW13AF
IC = 8 A; IB = 1.6 A;
see Fig.8
−
ICsat
collector saturation current
BUW13F
VCE = 1.5 V
−
−
−
−
−
−
10
8
A
A
BUW13AF
ICES
collector-emitter cut-off current
VCE = VCESMmax; VBE = 0;
note 1
1
mA
mA
mA
VCE = VCESMmax; VBE = 0;
−
−
−
4
Tj = 125 °C; note 1
IEBO
hFE
emitter-base cut-off current
DC current gain
VEB = 9 V; IC = 0
−
10
35
VCE = 5 V; IC = 20 mA;
see Fig.11
10
18
VCE = 5 V; IC = 1.5 A;
10
20
35
see Fig.11
Switching times resistive load (see Figs 12 and 13)
ton
turn-on time
BUW13F
I
Con = 10 A; IBon = IBoff = 2 A
−
−
−
1
1
µs
µs
BUW13AF
storage time
BUW13F
ICon = 8 A; IBon = IBoff = 1.6 A −
ts
I
Con = 10 A; IBon = IBoff = 2 A
−
−
−
4
4
µs
µs
BUW13AF
fall time
ICon = 8 A; IBon = IBoff = 1.6 A −
tf
BUW13F
I
Con = 10 A; IBon = IBoff = 2 A
−
−
−
0.8
0.8
µs
µs
BUW13AF
ICon = 8 A; IBon = IBoff = 1.6 A −
Switching times inductive load (see Figs 14 and 15)
ts
storage time
BUW13F
I
Con = 10 A; IB = 2 A;
VCL = 250 V; Tc = 100 °C
ICon = 8 A; IB = 1.6 A;
−
−
2.8
2.8
3.5
3.5
µs
µs
BUW13AF
VCL = 300 V; Tc = 100 °C
1997 Aug 13
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13F; BUW13AF
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
tf
fall time
BUW13F
I
Con = 10 A; IB = 2 A;
−
−
200
200
300
300
ns
ns
VCL = 250 V; Tc = 100 °C
Con = 8 A; IB = 1.6 A;
CL = 300 V; Tc = 100 °C
BUW13AF
I
V
Note
1. Measured with a half-sinewave voltage (curve tracer).
MGK674
MGB896
20
120
handbook, halfpage
handbook, halfpage
P
tot max
I
(%)
C
(A)
80
10
40
BUW13F
BUW13AF
0
0
0
400
800
1200
(V)
0
50
100
150
V
o
CE
T
( C)
h
Tc ≤ 100 °C; VBE = −1 to −5 V.
Fig.2 Power derating curve.
Fig.3 Reverse bias SOAR.
1997 Aug 13
5
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13F; BUW13AF
MGB929
2
10
δ = 0.01
I
CM max
I
C
(A)
I
t
=
C max
p
20 µs
10
50 µs
II
100 µs
1
200 µs
500 µs
1 ms
2 ms
I
−1
10
5 ms
10 ms
20 ms
DC
−2
−3
−4
10
BUW13F
BUW13AF
10
10
2
3
4
1
10
10
10
10
V
(V)
CE
Tmb = 25 °C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
(1) Ptot max and Ptot peak max lines.
(2) Second breakdown limits (independent of temperature).
Fig.4 Forward bias SOAR.
6
1997 Aug 13
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13F; BUW13AF
MGB866
10
Z
th j−mb
(K/W)
δ = 1
0.75
1
0.50
0.33
0.20
0.10
−1
10
0.05
0.02
0.01
−2
10
0
−3
10
−4
−3
−2
−1
2
10
10
10
10
1
10
10
t
(s)
p
Fig.5 Transient thermal impedance.
MGE239
andbook, halfpage
I
handbook, halfpage
C
+ 50 V
(mA)
100 to 200 Ω
250
L
200
100
0
horizontal
oscilloscope
vertical
300 Ω
1 Ω
6 V
V
(V)
CE
min
30 to 60 Hz
MGE252
V
CEOsust
Fig.6 Test circuit for collector-emitter
sustaining voltage.
Fig.7 Oscilloscope display for collector-emitter
sustaining voltage.
1997 Aug 13
7
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13F; BUW13AF
MGB915
2.0
V
BEsat
V
CEsat
(V)
1.5
1.0
(1)
(2)
0.5
(3)
(4)
0
10
−1
2
1
10
10
I
(A)
C
IC/IB = 5.
(1) VBE; Tj = 25 °C.
(2) VBE; Tj = 100 °C.
(3) VCE; Tj = 100 °C.
(4) VCE; Tj = 25 °C.
Fig.8 Base-emitter and collector-emitter saturation voltages as functions of collector current; typical values.
MGB912
1.6
V
BE
(V)
1.4
(1)
(2)
1.2
(3)
1.0
0.8
0
1
2
3
4
5
6
I
(A)
B
Tj = 25 °C.
(2) IC = 10 A.
(3) IC = 5 A.
(1) IC = 15 A.
Fig.9 Base-emitter voltage as a function of base current; typical values.
8
1997 Aug 13
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13F; BUW13AF
MGB871
MBC098
2
10
10
handbook, halfpage
handbook, halfpage
(1)
(2)
(3)
V
CEsat
(V)
h
FE
V
= 5 V
1V
CE
10
1
−1
1
10
10
−2
−1
2
−2
−1
10
1
10
10
10
10
1
10
I
(A)
I
(A)
B
C
(1) IC = 5 A.
(2) IC = 10 A.
(3) IC = 15 A.
Tj = 25 °C; solid line: typical values; dotted line: maximum values.
Tj = 125 °C.
Fig.10 Collector-emitter saturation voltage as a
function of base current.
Fig.11 DC current gain; typical values.
MBB731
handbook, halfpage
t ≤30 ns
r
I
B on
90%
10%
I
B
V
handbook, halfpage
CC
t
I
I
B off
R
L
V
R
IM
0
B
C on
D.U.T.
90%
10%
t
p
I
MGE244
C
T
t
t
f
t
on
t
s
VCC = 250 V; tp = 20 µs; VIM = −6 to +8 V; tp/T = 0.01.
tr ≤ 20 ns.
The values of RB and RL are selected in accordance with ICon and
IBon requirements.
Fig.13 Switching time waveforms with
resistive load.
Fig.12 Test circuit resistive load.
1997 Aug 13
9
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13F; BUW13AF
handbook, halfpage
90%
t
r
I
B on
I
B
10%
V
C
handbook, halfpage
CC
t
L
−I
B off
V
+I
CL
B
L
B
I
C on
90%
D.U.T.
−V
BE
MGE246
I
C
10%
t
t
f
t
s
t
VCL ≤ up to 1000 V; VCC = 30 V; VBE = −5 V; LB = 1 µH;
MGE238
off
LC = 200 µH.
Fig.14 Test circuit inductive load and reverse
bias SOAR.
Fig.15 Switching time waveforms with
inductive load.
1997 Aug 13
10
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13F; BUW13AF
PACKAGE OUTLINE
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads (in-line)
SOT199
E
E
A
1
m
A
P
1
α
q
D
L
1
Q
b
1
L
1
2
3
e
b
c
w
M
e
1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
A
A
b
b
c
D
E
E
e
e
1
L
L
1
m
P
Q
q
w
UNIT
mm
α
1
1
1
0.8
0.6
16.5 3.7
15.7 3.3
2.1
1.9
5.2
4.8
3.4
3.0
1.2
1.0
2.1
1.9
7.8
6.8
6.2
5.8
0.6 21.5 15.3
0.5 20.5 14.7
3.3
3.1
10.9
45°
5.45
0.4
Note
1. Terminals in this zone are not tinned.
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT199
97-06-27
1997 Aug 13
11
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13F; BUW13AF
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Aug 13
12
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13F; BUW13AF
NOTES
1997 Aug 13
13
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13F; BUW13AF
NOTES
1997 Aug 13
14
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13F; BUW13AF
NOTES
1997 Aug 13
15
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© Philips Electronics N.V. 1997
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
137067/00/01/pp16
Date of release: 1997 Aug 13
Document order number: 9397 750 02721
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Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
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