BUX84F [NXP]
Silicon diffused power transistors; 扩散硅功率晶体管
| 型号： | BUX84F |
| 厂家： | 
NXP |
| 描述： | Silicon diffused power transistors |
| 文件： | 总12页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BUX84F; BUX85F
Silicon diffused power transistors
1997 Aug 14
Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUX84F; BUX85F
DESCRIPTION
PINNING
PIN
High-voltage, high-speed,
DESCRIPTION
base
glass-passivated NPN power
transistor in a SOT186 package with
electrically isolated mounting base.
2
1
2
collector
emitter
1
3
mb
mounting base;
electrically isolated
from all pins
MBB008
APPLICATIONS
3
• Converters
1
2 3
MBK109
• Inverters
• Switching regulators
• Motor control systems.
Fig.1 Simplified outline
(SOT186) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCESM
collector-emitter peak voltage
BUX84F
VBE = 0
−
−
800
V
V
BUX85F
1000
VCEO
collector-emitter voltage
BUX84F
open base
see Fig.4
−
−
−
−
−
−
−
400
450
1
V
BUX85F
V
VCEsat
ICsat
IC
collector-emitter saturation voltage
collector saturation current
collector current (DC)
collector current (peak value)
total power dissipation
fall time
V
1
A
2
A
ICM
Ptot
tf
3
A
Th ≤ 25 °C
18
−
W
µs
0.4
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-h
thermal resistance from junction to external heatsink
note 1
note 2
7.2
4.7
55
K/W
K/W
K/W
Rth j-a
thermal resistance from junction to ambient
Notes
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
2. Mounted with heatsink compound and 30 ±5 N force on centre of package.
ISOLATION CHARACTERISTICS
SYMBOL
VisolM
PARAMETER
TYP.
MAX.
UNIT
isolation voltage from all terminals to external heatsink (peak value)
isolation capacitance from collector to external heatsink
−
1500
V
Cisol
12
−
pF
1997 Aug 14
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUX84F; BUX85F
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCESM
collector-emitter peak voltage
BUX84F
VBE = 0
−
−
800
V
V
BUX85F
1000
VCEO
collector-emitter voltage
BUX84F
open base
−
−
−
−
−
−
−
400
450
2
V
BUX85F
V
IC
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
total power dissipation
storage temperature
junction temperature
A
ICM
IB
3
A
0.75
1
A
IBM
Ptot
Tstg
Tj
A
Th ≤ 25 °C; note 1
18
W
°C
°C
−65
+150
150
−
Note
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCEOsust
collector-emitter sustaining voltage IC = 100 mA; IBoff = 0;
L = 25 mH; see Figs 2 and 3
BUX84
400
−
−
−
−
V
V
V
BUX85
450
−
VCEsat
collector-emitter saturation voltage IC = 0.3 A; IB = 30 mA;
see Fig.4
−
0.8
IC = 1 A; IB = 200 mA;
see Fig.4
−
−
−
−
1
V
V
VBEsat
ICES
base-emitter saturation voltage
collector-emitter cut-off current
IC = 1 A; IB = 200 mA;
see Fig.5
1.1
VCE = VCESmax; VBE = 0
−
−
−
−
0.2
1.5
mA
mA
V
CE = VCESmax; VBE = 0;
Tj = 125 °C
IEBO
hFE
emitter-base cut-off current
DC current gain
VEB = 5 V; IC = 0
−
−
−
1
mA
VCE = 5 V; IC = 5 A; see Fig.6
15
20
−
V
CE = 5 V; IC = 100 mA;
50
100
see Fig.6
fT
transition frequency
VCE = 10 V; IC = 200 mA;
f = 1 MHz
−
20
−
MHz
1997 Aug 14
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUX84F; BUX85F
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Switching times resistive load (see Fig.7)
ton
ts
turn-on time
storage time
fall time
ICon = 1 A; IBon = 200 mA;
IBoff = −400 mA; VCC = 250 V
−
−
−
−
0.2
0.5
µs
ICon = 1 A; IBon = 200 mA;
2
3.5
−
µs
µs
µs
IBoff = −400 mA; VCC = 250 V
tf
ICon = 1 A; IBon = 200 mA;
IBoff = −400 mA; VCC = 250 V
0.4
−
I
Con = 1 A; IBon = 200 mA;
1.4
IBoff = −400 mA; VCC = 250 V;
Tmb = 95 °C
MGE239
I
andbook, halfpage
handbook, halfpage
C
+ 50 V
(mA)
100 to 200 Ω
250
L
200
100
0
horizontal
oscilloscope
vertical
300 Ω
1 Ω
6 V
V
(V)
CE
min
30 to 60 Hz
MGE252
V
CEOsust
Fig.2 Test circuit for collector-emitter
sustaining voltage.
Fig.3 Oscilloscope display for collector-emitter
sustaining voltage.
1997 Aug 14
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUX84F; BUX85F
(1)
(2)
(3)
(4)
MGB908
4
V
CEsat
(V)
3
2
1
0
0
0.05
0.1
0.15
0.2
0.25
0.3
I
(A)
B
(1) IC = 0.3 A.
(2) IC = 0.5 A.
(3) IC = 0.7 A.
(4) IC = 1 A.
Tj = 25 °C; solid line: typical values; dotted line: maximum values.
Fig.4 Collector-emitter saturation voltage as a function of base current; typical values.
MGB904
MGB879
2
10
1.0
handbook, halfpage
handbook, halfpage
V
BEsat
(V)
(1)
h
FE
typ
(2)
(3)
0.75
10
0.5
0
1
10
100
200
300
−2
−1
I
(mA)
10
1
10
B
I
(A)
C
Tj = 25 °C.
(1) IC = 1 A.
(2)
IC = 0.5 A.
(3) IC = 0.3 A.
Fig.5 Base-emitter saturation voltage as a
function of emitter current; typical values.
Fig.6 DC current gain; typical values.
1997 Aug 14
5
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUX84F; BUX85F
MBB731
handbook, halfpage
t ≤30 ns
r
I
B on
90%
10%
I
B
t
I
I
B off
C on
90%
10%
I
C
t
t
f
t
on
t
s
Fig.7 Switching time waveforms with
resistive load.
+25 V
BD139
680
µF
200
Ω
250
Ω
T
V
100
µF
CC
100 Ω
250V
V
D.U.T.
IM
30 Ω
100
t
V
MGE253
p
i
Ω
50
680
Ω
µF
BD140
tp = 20 µs; T = 2 ms; VIM = 15 V.
Fig.8 Test circuit resistive load.
6
1997 Aug 14
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUX84F; BUX85F
PACKAGE OUTLINE
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3 lead TO-220 exposed tabs
SOT186
E
E
1
A
P
m
A
1
q
D
1
D
L
1
Q
b
1
L
L
2
1
2
3
b
c
w
M
e
e
1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
A
A
b
c
D
D
1
E
E
e
e
L
L
1
m
P
Q
q
w
b
UNIT
mm
L
2
1
1
1
1
1.5
1.3
14.3
13.5
4.8
4.0
1.4
1.2
4.4
4.0
2.9
2.5
0.9
0.7
4.4
4.0
0.55 17.0
0.38 16.4
7.9 10.2
7.5 9.6
5.7
5.3
0.9
0.5
3.2
3.0
5.08
2.54
10
0.4
Note
1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
97-06-11
SOT186
TO-220
1997 Aug 14
7
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUX84F; BUX85F
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Aug 14
8
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUX84F; BUX85F
NOTES
1997 Aug 14
9
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUX84F; BUX85F
NOTES
1997 Aug 14
10
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUX84F; BUX85F
NOTES
1997 Aug 14
11
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© Philips Electronics N.V. 1997
SCA55
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Printed in The Netherlands
137067/00/01/pp12
Date of release: 1997 Aug 14
Document order number: 9397 750 02724
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