BY329-1000,127 [NXP]

Rectifier Diodes fast, soft-recovery - IO (AV) / IF (AV): 8 A; trr: 135 ns; VRRM: 1000 V; Package: SOD59 (TO-220AC); Container: Horizontal, Rail Pack;


型号：	BY329-1000,127
厂家：	NXP
描述：	Rectifier Diodes fast, soft-recovery - I<sub>O (AV)</sub> / I<sub>F (AV)</sub>: 8 A; t<sub>rr</sub>: 135 ns; V<sub>RRM</sub>: 1000 V; Package: SOD59 (TO-220AC); Container: Horizontal, Rail Pack
文件：	总6页 (文件大小：45K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Philips Semiconductors

Product specification

Rectifier diodes

fast, soft-recovery

BY329 series

FEATURES

SYMBOL

QUICK REFERENCE DATA

V_R= 800 V/ 1000 V/ 1200 V

I_F(AV)= 8 A

• Low forward volt drop

• Fast switching

• Soft recovery characteristic

• High thermal cycling performance

• Low thermal resistance

I_FSM≤ 75 A

t_rr≤ 135 ns

GENERAL DESCRIPTION

PINNING

SOD59 (TO220AC)

Glass-passivated double diffused

rectifier diodes featuring low

forward voltage drop, fast reverse

recovery and soft recovery

characteristic. The devices are

intended for use in TV receivers,

monitors and switchedmode power

supplies.

DESCRIPTION

cathode

anode

cathode

tab

The BY329 series is supplied in the

conventional

leaded

SOD59

(TO220AC) package.

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS

MIN.

MAX.

UNIT

BY329

-800 -1000 -1200

V_RSM

Peak non-repetitive reverse

800

1000 1200

voltage

V_RRM

V_RWM

Peak repetitive reverse voltage

Crest working reverse voltage

Average forward current¹

800

600

1000 1200

800

1000

I_F(AV)

square wave; δ = 0.5;

_mb≤ 122 ˚C

sinusoidal; a = 1.57;

_mb≤ 125 ˚C

I_F(RMS)

I_FRM

RMS forward current

Repetitive peak forward current t = 25 µs; δ = 0.5;

_mb≤ 122 ˚C

I_FSM

Non-repetitive peak forward

current.

t = 10 ms

t = 8.3 ms

sinusoidal; T_j= 150 ˚C prior

to surge; with reapplied

V_RWM(max)

I²t

T_stg

T_j

I²t for fusing

Storage temperature

Operating junction temperature

t = 10 ms

-40

150

A²s

˚C

1 Neglecting switching and reverse current losses.

September 1998

Rev 1.200

Philips Semiconductors

Product specification

Rectifier diodes

fast, soft-recovery

BY329 series

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-mb}

Thermal resistance junction to

mounting base

Thermal resistance junction to in free air.

ambient

2.0

K/W

R_{th j-a}

K/W

STATIC CHARACTERISTICS

T_j= 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V_F

I_R

Forward voltage

Reverse current

I_F= 20 A

V_R= V_RWM; T_j= 125 ˚C

1.5

0.1

1.85

1.0

DYNAMIC CHARACTERISTICS

T_j= 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

t_rr

Reverse recovery time

I_F= 1 A; V_R> 30 V; -dI_F/dt = 50 A/µs

I_F= 2 A; V_R> 30 V; -dI_F/dt = 20 A/µs

100

0.5

135

0.7

µC

A/µs

Q_s

Reverse recovery charge

dI_R/dt

Maximum slope of the reverse I_F= 2 A; -dI_F/dt = 20 A/µs

recovery current

September 1998

Rev 1.200

Philips Semiconductors

Product specification

Rectifier diodes

fast, soft-recovery

BY329 series

IFS (RMS) / A

BY329

100

IFSM

trr

time

100%

25%

rrm

1ms

10ms

0.1s

10s

tp / s

Fig.1. Definition of t_rr, Q_sand I_rrm

Fig.4. Maximum non-repetitive rms forward current.

I_F= f(t_p); sinusoidal current waveform; T_j= 150˚C prior

to surge with reapplied V_RWM

IF / A

BY229F

Tmb(max) / C

BY329

PF / W

110

120

D = 1.0

Vo = 1.25 V

Rs = 0.03 Ohms

Tj = 150 C

Tj = 25 C

0.5

0.2

130

140

150

0.1

D =

typ

max

1.5

0.5

IF(AV) / A

VF / V

Fig.2. Maximum forward dissipation, P_F= f(I_F(AV));

square wave current waveform; parameter D = duty

cycle = t_p/T.

Fig.5. Typical and maximum forward characteristic;

I_F= f(V_F); parameter T_j

BY329

Qs / uC

Tmb(max) / C

a = 1.57

PF / W

120

130

Tj = 150 C

Tj = 25 C

Vo = 1.25 V

Rs = 0.03 Ohms

IF = 10 A

10 A

1.9

2.2

2 A

2.8

1 A

2 A

1 A

140

150

0.1

-dIF/dt (A/us)

100

IF(AV) / A

Fig.3. Maximum forward dissipation, P_F= f(I_F(AV));

sinusoidal current waveform; parameter a = form

Fig.6. Maximum Q_sat T_j= 25˚C and 150˚C

factor = I_F(RMS)/I_F(AV)

September 1998

Rev 1.200

Philips Semiconductors

Product specification

Rectifier diodes

fast, soft-recovery

BY329 series

Transient thermal impedance, Zth j-mb (K/W)

BY329

trr / ns

1000

IF = 10 A

10A

1 A

0.1

100

0.01

D =

Tj = 150 C

Tj = 25 C

0.001

1us

10us 100us 1ms

10ms 100ms

BY229

10s

-dIF/dt (A/us)

100

pulse width, tp (s)

Fig.7. Maximum t_rrmeasured to 25% of I_rrm; T_j= 25˚C

and 150˚C

Fig.9. Transient thermal impedance Z_th= f(t_p)

BY329

Cd / pF

100

1000

100

VR / V

Fig.8. Typical junction capacitance C_dat f = 1 MHz_;

T_j= 25˚C

September 1998

Rev 1.200

Philips Semiconductors

Product specification

Rectifier diodes

fast, soft-recovery

BY329 series

MECHANICAL DATA

Dimensions in mm

Net Mass: 2 g

4,5

max

10,3

max

1,3

3,7

2,8

5,9

min

15,8

max

3,0 max

not tinned

3,0

13,5

min

1,3

max

(2x)

0,9 max (2x)

0,6

2,4

5,08

Fig.10. SOD59 (TO220AC). pin 1 connected to mounting base.

Notes

1. Refer to mounting instructions for TO220 envelopes.

2. Epoxy meets UL94 V0 at 1/8".

September 1998

Rev 1.200

Philips Semiconductors

Product specification

Rectifier diodes

fast, soft-recovery

BY329 series

DEFINITIONS

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and

operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 1998

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the

The information presented in this document does not form part of any quotation or contract, it is believed to be

accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under patent or other

industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these

products can be reasonably expected to result in personal injury. Philips customers using or selling these products

for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting

from such improper use or sale.

September 1998

Rev 1.200

相关型号：