BY329X-1500S [NXP]

Damper diode fast, high-voltage; 阻尼二极管快速,高电压
BY329X-1500S
型号: BY329X-1500S
厂家: NXP    NXP
描述:

Damper diode fast, high-voltage
阻尼二极管快速,高电压

整流二极管 高压 局域网 软恢复二极管 高压快速软恢复二极管
文件: 总6页 (文件大小:42K)
中文:  中文翻译
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Philips Semiconductors  
Product specification  
Damper diode  
fast, high-voltage  
BY329X-1500, BY329X-1500S  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
VR = 1500 V  
• Low forward volt drop  
• Fast switching  
• Soft recovery characteristic  
• High thermal cycling performance  
• Isolated mounting tab  
VF 1.35 V / 1.5 V  
k
1
a
2
IF(peak) = 6 A (f = 16 kHz)  
I
F(peak) = 6 A (f = 70 kHz)  
FSM 75 A  
trr 230 ns / 160 ns  
I
GENERAL DESCRIPTION  
PINNING  
SOD113  
Glass-passivated double diffused  
rectifier diode featuring low forward  
voltage drop, fast reverse recovery  
and soft recovery characteristic.  
The device is intended for use in TV  
receivers and PC monitors.  
PIN  
DESCRIPTION  
anode  
cathode  
isolated  
case  
1
2
tab  
The BY329X series is supplied in  
the conventional leaded SOD113  
package.  
1
2
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER CONDITIONS  
MIN.  
MAX.  
UNIT  
VRSM  
VRRM  
VRWM  
Peak non-repetitive reverse  
-
1500  
V
voltage  
Peak repetitive reverse  
voltage  
Crest working reverse voltage  
-
-
1500  
V
V
1300  
BY329X  
-1500  
-1500S  
IF(peak)  
Peak working forward current f = 16 kHz  
f = 70 kHz  
-
-
6
-
-
A
A
6
IFRM  
IF(RMS)  
Peak repetitive forward  
current  
RMS forward current  
Peak non-repetitive forward  
current  
t = 25 µs; δ = 0.5; Ths 86 ˚C  
-
14  
A
-
-
11  
75  
A
A
IFSM  
t = 10 ms  
sinusoidal; Tj = 150 ˚C prior to  
surge; with reapplied VRWM(max)  
Tstg  
Tj  
Storage temperature  
Operating junction  
temperature  
-40  
-
150  
150  
˚C  
˚C  
September 1998  
1
Rev 1.100  
 
Philips Semiconductors  
Product specification  
Damper diode  
fast, high-voltage  
BY329X-1500, BY329X-1500S  
ISOLATION LIMITING VALUE & CHARACTERISTIC  
Ths = 25 ˚C unless otherwise specified  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Visol  
Cisol  
R.M.S. isolation voltage from  
f = 50-60 Hz; sinusoidal  
waveform;  
-
2500  
V
both terminals to external  
heatsink  
R.H. 65% ; clean and dustfree  
Capacitance from both terminals f = 1 MHz  
to external heatsink  
-
10  
-
pF  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-hs  
Thermal resistance junction to with heatsink compound  
-
-
-
-
-
55  
4.8  
5.9  
-
K/W  
K/W  
K/W  
heatsink  
without heatsink compound  
Rth j-a  
Thermal resistance junction to in free air.  
ambient  
STATIC CHARACTERISTICS  
Tj = 25 ˚C unless otherwise stated  
SYMBOL PARAMETER  
CONDITIONS  
TYP.  
MAX.  
UNIT  
BY329X- 1500 1500S 1500 1500S  
VF  
IR  
Forward voltage  
Reverse current  
IF = 6.5 A  
1.1  
1.3  
1.2  
250  
1
1.45  
1.6  
1.5  
250  
1
V
V
µA  
mA  
IF = 6.5 A; Tj = 125 ˚C  
VR = 1300 V  
1.05  
1.35  
-
-
-
-
VR = 1300 V; Tj = 125 ˚C  
DYNAMIC CHARACTERISTICS  
Tj = 25 ˚C unless otherwise stated  
SYMBOL PARAMETER  
CONDITIONS  
TYP.  
MAX.  
UNIT  
BY329X 1500 1500S 1500 1500S  
trr  
Reverse recovery time  
IF = 1 A; VR 30 V;  
dIF/dt = 50A/µs  
0.18 0.13  
0.23  
0.16  
µs  
Qs  
Vfr  
tfr  
Reverse recovery charge  
IF = 2 A; -dIF/dt = 20 A/µs  
1.6  
17  
210  
0.7  
23  
220  
2.0  
30  
300  
0.95  
40  
320  
µC  
V
ns  
Peak forward recovery voltage IF = 6.5A; dIF/dt = 50A/µs  
Forward recovery time  
IF = 6.5A; dIF/dt = 50A/µs  
September 1998  
2
Rev 1.100  
Philips Semiconductors  
Product specification  
Damper diode  
fast, high-voltage  
BY329X-1500, BY329X-1500S  
Maximum pulse width / us  
I
100  
10  
1
F
VRRM  
V
pulse  
width tp  
time  
period T  
10%  
time  
tfr  
V
F
V
fr  
5V  
V
F
10  
100  
time  
line frequency / kHz  
Fig.1. Definition of Vfr and tfr  
Fig.4. Maximum allowable pulse width tp versus line  
frequency; Basic horizontal deflection circuit.  
IF / A  
dI  
F
30  
20  
10  
0
I
F
Tj = 125 C  
Tj = 25 C  
dt  
trr  
time  
typ  
Qs  
100%  
25%  
I
max  
1.5  
R
0
0.5  
1
2
VF / V  
Fig.2. Definition of trr and Qs  
Fig.5. BY329-1500 Typical and maximum forward  
characteristic IF = f(VF); parameter Tj  
IF / A  
VCC  
30  
20  
10  
0
Tj = 125 C  
Tj = 25 C  
Line output transformer  
LY  
typ  
Cf  
Cs  
max  
D1  
deflection transistor  
0
0.5  
1
1.5  
2
VF / V  
Fig.3. Basic horizontal deflection circuit.  
Fig.6. BY329-1500S Typical and maximum forward  
characteristic IF = f(VF); parameter Tj  
September 1998  
3
Rev 1.100  
Philips Semiconductors  
Product specification  
Damper diode  
fast, high-voltage  
BY329X-1500, BY329X-1500S  
Transient thermal impedance, Zth j-hs (K/W)  
10  
1
0.1  
p
t
p
t
P
0.01  
D
D =  
T
t
T
0.001  
1us  
10us 100us 1ms  
10ms 100ms  
1s  
10s  
pulse width, tp (s)  
Fig.7. Transient thermal impedance Zth = f(tp)  
September 1998  
4
Rev 1.100  
Philips Semiconductors  
Product specification  
Damper diode  
fast, high-voltage  
BY329X-1500, BY329X-1500S  
MECHANICAL DATA  
Dimensions in mm  
Net Mass: 2 g  
10.3  
max  
4.6  
max  
3.2  
3.0  
2.9 max  
2.8  
Recesses (2x)  
6.4  
2.5  
0.8 max. depth  
15.8  
max  
seating  
plane  
15.8  
max.  
19  
max.  
3 max.  
not tinned  
3
2.5  
13.5  
min.  
1
2
M
0.4  
1.0 (2x)  
0.6  
2.5  
0.9  
0.7  
2.54  
0.5  
5.08  
Fig.8. SOD113; The seating plane is electrically isolated from all terminals.  
Notes  
1. Refer to mounting instructions for F-pack envelopes.  
2. Epoxy meets UL94 V0 at 1/8".  
September 1998  
5
Rev 1.100  
Philips Semiconductors  
Product specification  
Damper diode  
fast, high-voltage  
BY329X-1500, BY329X-1500S  
DEFINITIONS  
Data sheet status  
Objective specification  
This data sheet contains target or goal specifications for product development.  
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.  
Product specification  
This data sheet contains final product specifications.  
Limiting values  
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one  
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and  
operation of the device at these or at any other conditions above those given in the Characteristics sections of  
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
Philips Electronics N.V. 1998  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the  
copyright owner.  
The information presented in this document does not form part of any quotation or contract, it is believed to be  
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any  
consequence of its use. Publication thereof does not convey nor imply any license under patent or other  
industrial or intellectual property rights.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices or systems where malfunction of these  
products can be reasonably expected to result in personal injury. Philips customers using or selling these products  
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting  
from such improper use or sale.  
September 1998  
6
Rev 1.100  

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