BY359X-1500 [NXP]

Damper diode fast, high-voltage; 阻尼二极管快速,高电压
BY359X-1500
型号: BY359X-1500
厂家: NXP    NXP
描述:

Damper diode fast, high-voltage
阻尼二极管快速,高电压

整流二极管 高压 局域网 软恢复二极管 高压快速软恢复二极管
文件: 总5页 (文件大小:44K)
中文:  中文翻译
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Philips Semiconductors  
Product specification  
Damper diode  
fast, high-voltage  
BY359X-1500, BY359X-1500S  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
VR = 1500 V  
• Low forward volt drop  
• Fast switching  
• Soft recovery characteristic  
• High thermal cycling performance  
• Isolated mounting tab  
VF 1.8 V / 2 V  
k
1
a
2
IF(RMS) = 15.7 A  
IFSM 60 A  
trr 600 ns / 350 ns  
GENERAL DESCRIPTION  
PINNING  
SOD113  
Glass-passivated double diffused  
rectifier diode in a plastic envelope  
featuring low forward voltage drop,  
fast reverse recovery and soft  
recovery characteristic. The device  
is intended for use in TV receivers  
and PC monitors.  
PIN  
DESCRIPTION  
cathode  
anode  
isolated  
case  
1
2
tab  
The BY359X series is supplied in  
the conventional leaded SOD113  
package.  
1
2
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX. UNIT  
VRSM  
Peak non-repetitive reverse  
voltage  
-
1500  
V
VRRM  
VRWM  
IF(peak)  
Peak repetitive reverse voltage  
Crest working reverse voltage  
Peak forward current  
-
-
-
-
-
-
-
-
1500  
1300  
10  
V
V
A
A
A
A
A
A
16-32kHz TV  
BY359X-1500  
31-70kHz monitor  
BY359X-1500S  
7
IF(RMS)  
RMS forward current  
15.7  
60  
60  
66  
IFRM  
Peak repetitive forward current sinusoidal; a = 1.57  
IFSM  
Peak non-repetitive forward  
current  
t = 10 ms  
t = 8.3 ms  
sinusoidal; Tj = 150 ˚C prior to surge;  
with reapplied VRWM(max)  
Tstg  
Tj  
Storage temperature  
Operating junction temperature  
-40  
-
150  
150  
˚C  
˚C  
ISOLATION LIMITING VALUE & CHARACTERISTIC  
Ths = 25 ˚C unless otherwise specified  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Visol  
Cisol  
R.M.S. isolation voltage from  
f = 50-60 Hz; sinusoidal  
waveform;  
-
2500  
V
both terminals to external  
heatsink  
R.H. 65% ; clean and dustfree  
Capacitance from both terminals f = 1 MHz  
to external heatsink  
-
10  
-
pF  
September 1998  
1
Rev 1.300  
 
Philips Semiconductors  
Product specification  
Damper diode  
fast, high-voltage  
BY359X-1500, BY359X-1500S  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-hs  
Thermal resistance junction to with heatsink compound  
-
-
-
-
-
55  
4.8  
5.9  
-
K/W  
K/W  
K/W  
heatsink  
without heatsink compound  
Rth j-a  
Thermal resistance junction to in free air.  
ambient  
STATIC CHARACTERISTICS  
Tj = 25 ˚C unless otherwise stated  
BY359X-1500 BY359X-1500S  
TYP. MAX. TYP. MAX. UNIT  
SYMBOL PARAMETER  
CONDITIONS  
VF  
Forward voltage  
IF = 20 A  
1.3  
1.00  
10  
1.8  
1.5  
100  
300  
1.5  
1.25  
10  
2.0  
1.75  
100  
600  
V
V
µA  
µA  
IF = 10 A; Tj = 150˚C  
VR = 1300 V  
VR = 1300 V;  
Tj = 100 ˚C  
IR  
Reverse current  
50  
100  
DYNAMIC CHARACTERISTICS  
Tj = 25 ˚C unless otherwise stated  
BY359X-1500 BY359X-1500S  
TYP. MAX. TYP. MAX. UNIT  
SYMBOL PARAMETER  
CONDITIONS  
trr  
Qs  
Reverse recovery time  
Reverse recovery charge  
IF = 2 A; VR 30 V;  
-dIF/dt = 20 A/µs  
0.47  
1.6  
0.60  
2.0  
0.28  
0.70  
0.35  
0.95  
µs  
µC  
Vfr  
Peak forward recovery voltage  
IF = 10 A;  
dIF/dt = 30 A/µs  
11.0  
-
17.0  
-
V
I
dI  
F
F
I
F
dt  
trr  
time  
time  
time  
V
F
Qs  
100%  
25%  
V
fr  
I
I
R
V
F
rrm  
Fig.1. Definition of trr, Qs and Irrm  
Fig.2. Definition of Vfr  
September 1998  
2
Rev 1.300  
Philips Semiconductors  
Product specification  
Damper diode  
fast, high-voltage  
BY359X-1500, BY359X-1500S  
IF / A  
IFS(RMS) / A  
80  
30  
20  
10  
0
Tj=150C  
Tj=25C  
70  
IFSM  
60  
50  
40  
30  
20  
10  
0
typ  
max  
1ms  
10ms  
0.1s  
1s  
10s  
0
1.0  
2.0  
VF / V  
tp / s  
Fig.3. Maximum non-repetitive rms forward current.  
IF = f(tp); sinusoidal current waveform; Tj = 150˚C prior  
Fig.5. BY359X-1500 forward characteristic IF = f(VF);  
parameter Tj  
to surge with reapplied VRWM  
.
IF / A  
Tj=150C  
Tj=25C  
30  
20  
10  
0
Transient thermal impedance, Zth j-hs (K/W)  
10  
1
0.1  
typ  
p
t
p
t
P
0.01  
D
D =  
T
max  
t
T
0
1.0  
2.0  
0.001  
1us  
10us 100us 1ms  
10ms 100ms  
1s  
10s  
VF / V  
pulse width, tp (s)  
Fig.6. BY359X-1500S forward characteristic  
IF = f(VF); parameter Tj  
Fig.4. Transient thermal impedance Zth = f(tp)  
September 1998  
3
Rev 1.300  
Philips Semiconductors  
Product specification  
Damper diode  
fast, high-voltage  
BY359X-1500, BY359X-1500S  
MECHANICAL DATA  
Dimensions in mm  
Net Mass: 2 g  
10.3  
max  
4.6  
max  
3.2  
3.0  
2.9 max  
2.8  
Recesses (2x)  
6.4  
2.5  
0.8 max. depth  
15.8  
max  
seating  
plane  
15.8  
max.  
19  
max.  
3 max.  
not tinned  
3
2.5  
13.5  
min.  
1
2
M
0.4  
1.0 (2x)  
0.6  
2.5  
0.9  
0.7  
2.54  
0.5  
5.08  
Fig.7. SOD113; The seating plane is electrically isolated from all terminals.  
Notes  
1. Refer to mounting instructions for F-pack envelopes.  
2. Epoxy meets UL94 V0 at 1/8".  
September 1998  
4
Rev 1.300  
Philips Semiconductors  
Product specification  
Damper diode  
fast, high-voltage  
BY359X-1500, BY359X-1500S  
DEFINITIONS  
Data sheet status  
Objective specification  
This data sheet contains target or goal specifications for product development.  
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.  
Product specification  
This data sheet contains final product specifications.  
Limiting values  
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one  
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and  
operation of the device at these or at any other conditions above those given in the Characteristics sections of  
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
Philips Electronics N.V. 1998  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the  
copyright owner.  
The information presented in this document does not form part of any quotation or contract, it is believed to be  
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any  
consequence of its use. Publication thereof does not convey nor imply any license under patent or other  
industrial or intellectual property rights.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices or systems where malfunction of these  
products can be reasonably expected to result in personal injury. Philips customers using or selling these products  
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting  
from such improper use or sale.  
September 1998  
5
Rev 1.300  

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