BY505T/R [NXP]

DIODE 0.05 A, 2200 V, SILICON, SIGNAL DIODE, Signal Diode;


型号：	BY505T/R
厂家：	NXP
描述：	DIODE 0.05 A, 2200 V, SILICON, SIGNAL DIODE, Signal Diode 高压
文件：	总6页 (文件大小：36K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D189

BY505

High-voltage soft-recovery rectifier

1996 Sep 26

Product speciﬁcation

Supersedes data of May 1996

Philips Semiconductors

Product speciﬁcation

High-voltage soft-recovery rectiﬁer

BY505

expansion of all used parts are

FEATURES

DESCRIPTION

matched.

• Glass passivated

Rugged glass package, using a high

temperature alloyed construction.

The package is designed to be used

in an insulating medium such as

resin, oil or SF6 gas.

• High maximum operating

temperature

This package is hermetically sealed

and fatigue free as coefficients of

• Low leakage current

• Excellent stability

• Soft-recovery switching

characteristics

handbook, halfpage

• Compact construction.

MAM162

APPLICATIONS

The cathode lead is marked by a black band.

• High-voltage applications for:

– High frequencies

Fig.1 Simplified outline (SOD61A) and symbol.

– Switching applications.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

non-repetitive peak reverse voltage

repetitive peak reverse voltage

working reverse voltage

CONDITIONS

MIN.

MAX.

2200

2000

UNIT

V_RSM

V_RRM

V_RW

−

I_F(AV)

average forward current

averaged over any 20 ms period;

T_tp= 25 °C; lead length = 10 mm;

see Fig.2; see also Fig.4

averaged over any 20 ms period;

−

T_amb= 60 °C; PCB mounting

(see Fig.6); see Fig.3;

see also Fig.4

I_FRM

I_FSM

repetitive peak forward current

−

800

non-repetitive peak forward current

t ≤ 10 ms; half sinewave;

T_j= T_{j max}prior to surge;

V_R= V_RWmax

T_stg

T_j

storage temperature

junction temperature

−65

+120

°C

1996 Sep 26

Philips Semiconductors

Product speciﬁcation

High-voltage soft-recovery rectiﬁer

BY505

ELECTRICAL CHARACTERISTICS

T_j= 25 °C; unless otherwise speciﬁed.

SYMBOL

PARAMETER

forward voltage

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V_F

I_R

I_F= 100 mA; T_j= T_{j max}; see Fig.5

V_R= V_RWmax; T_j= T_{j max}

−

8.5

reverse current

recovery charge

µA

Q_r

when switched from I_F= 100 mA to

V_R≥ 100 V and dI_F/dt = −200 mA/µs;

see Fig.7

t_f

fall time

when switched from I_F= 100 mA to

V_R≥ 100 V and dI_F/dt = −200 mA/µs;

see Fig.7

100

−

200

−

t_rr

reverse recovery time

diode capacitance

when switched from I_F= 100 mA to

V_R≥ 100 V and dI_F/dt = −200 mA/µs;

see Fig.7

C_d

V_R= 0 V; f = 1 MHz

−

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

100

UNIT

R_{th j-tp}

R_{th j-a}

thermal resistance from junction to tie-point

thermal resistance from junction to ambient

lead length = 10 mm

note 1

K/W

155

Note

1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.6.

For more information please refer to the “General Part of associated Handbook”.

1996 Sep 26

Philips Semiconductors

Product speciﬁcation

High-voltage soft-recovery rectiﬁer

BY505

GRAPHICAL DATA

MBH399

MBH400

100

handbook, halfpage

F(AV)

(mA)

120

(°C)

amb

Switched mode application.

a = 1.42; δ = 0.5; V_R= V_RWmax; lead length = 10 mm.

Switched mode application.

a = 1.42; δ = 0.5; V_R= V_RWmax; device mounted as shown in Fig.6.

Fig.2 Maximum permissible average forward

current as a function of tie-point

temperature (including losses due to

reverse leakage).

Fig.3 Maximum permissible average forward

current as a function of ambient

temperature (including losses due to

reverse leakage).

MBH401

MBH402

1000

200

handbook, halfpage

a = 3 2.5

2 1.57 1.42

(mW)

(mA)

500

100

(mA)

V (V)

F(AV)

a = I_F(RMS)/I_F(AV); δ = 0.5; V_R= V_RWmax

Dotted line: T_j= 120 °C.

Solid line: T_j= 25 °C.

Fig.4 Maximum steady state power dissipation

(forward plus leakage losses) as a function

of average forward current.

Fig.5 Forward current as a function of maximum

forward voltage.

1996 Sep 26

Philips Semiconductors

Product speciﬁcation

High-voltage soft-recovery rectiﬁer

BY505

handbook, halfpage

10%

90%

MGD569

MGA200

Dimensions in mm.

Fig.6 Device mounted on a printed-circuit board.

Fig.7 Reverse recovery definitions.

1996 Sep 26

Philips Semiconductors

Product speciﬁcation

High-voltage soft-recovery rectiﬁer

BY505

PACKAGE OUTLINE

0.6

handbook, full pagewidth

max

2.5

max

4.9

max

32.5 min

MGD603

Dimensions in mm.

The marking band indicates the cathode.

Fig.8 SOD61A.

DEFINITIONS

Data Sheet Status

Objective speciﬁcation

Preliminary speciﬁcation

Product speciﬁcation

This data sheet contains target or goal speciﬁcations for product development.

This data sheet contains preliminary data; supplementary data may be published later.

This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

1996 Sep 26

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