BY559-1500U [NXP]
Damper diode fast, high-voltage; 阻尼二极管快速，高电压
| 型号： | BY559-1500U |
| 厂家： | 
NXP |
| 描述： | Damper diode fast, high-voltage |
| 文件： | 总3页 (文件大小：18K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Objective specification
Damper diode
fast, high-voltage
BY559-1500U
FEATURES
SYMBOL
QUICK REFERENCE DATA
VR = 1500 V
• Low forward volt drop
• Low forward recovery voltage
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Low thermal resistance
VF ≤ 1.4 V
k
1
a
2
Vfr ≤ 10 V
trr ≤ 120 ns
IF(peak) = 10 A
IFSM ≤ 150 A
GENERAL DESCRIPTION
PINNING
SOD59 (TO220AC)
A double diffused rectifier diode in
a plastic envelope, featuring fast
forward and reverse recovery and
low forward voltage. The device is
intended for use as a damper diode
in horizontal deflection circuits of
PIN
DESCRIPTION
cathode
anode
cathode
tab
1
2
large
screen
monitors
and
tab
workstations .
1
2
The BY559 series is supplied in the
conventional
leaded
SOD59
(TO220AC) package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
VRWM
IF(PEAK)
IFRM
Peak repetitive reverse voltage
-
-
-
-
-
1500
1300
10
V
V
A
A
A
Crest working reverse voltage
Peak working forward current
f = 130 kHz;
Peak repetitive forward current t = 100 µs
Peak non-repetitive forward
current
150
160
IFSM
t = 10 ms
sinusoidal; Tj = 150 ˚C prior to
surge; with reapplied VRWM(max)
Tstg
Tj
Storage temperature
Operating junction temperature
-40
-
150
150
˚C
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Rth j-a
Thermal resistance junction to
mounting base
Thermal resistance junction to in free air
ambient
-
-
-
1.0
-
K/W
K/W
60
September 1998
1
Rev 1.100
Philips Semiconductors
Objective specification
Damper diode
fast, high-voltage
BY559-1500U
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VF
IR
Forward voltage
Reverse current
IF = 6.5 A
-
-
-
-
1.5
1.2
-
1.8
1.4
0.5
2.0
V
IF = 6.5 A; Tj = 125 ˚C
VR = VRWMmax
V
mA
mA
VR = VRWMmax; Tj = 125 ˚C
-
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Vfr
tfr
Forward recovery voltage
Forward recovery time
Reverse recovery time
Reverse recovery charge
IF = 6.5 ; dIF/dt = 50 A/µs
-
-
-
-
6
10
V
IF = 6.5 A; dIF/dt = 50 A/µs; VF = 5 V
IF = 1 A; -dIF/dt = 50 A/µs; VR ≥ 30 V
IF = 2 A; -dIF/dt = 20 A/µs; VR ≥ 30 V
130
90
180
120
0.25
ns
ns
µC
trr
Qs
0.2
September 1998
2
Rev 1.100
Philips Semiconductors
Objective specification
Damper diode
fast, high-voltage
BY559-1500U
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max
(2x)
1
2
0,9 max (2x)
0,6
2,4
5,08
Fig.1. SOD59 (TO220AC). pin 1 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1998
3
Rev 1.100
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