BYD67 [NXP]
Ripple blocking diode; 纹波阻塞二极管
| 型号： | BYD67 |
| 厂家： | 
NXP |
| 描述： | Ripple blocking diode |
| 文件： | 总8页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BYD67
Ripple blocking diode
Product specification
1999 Oct 20
Supersedes data of 1998 Nov 20
Philips Semiconductors
Product specification
Ripple blocking diode
BYD67
FEATURES
DESCRIPTION
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
• Glass passivated
Cavity free cylindrical glass SOD87
package through Implotec
technology. The SOD87 is
(1)
• High maximum operating
temperature
(1) Implotec is a trademark of Philips.
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
k
a
handbook, 4 columns
• Shipped in 8 mm embossed tape
MAM061
• Smallest surface mount rectifier
package.
Fig.1 Simplified outline (SOD87) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
repetitive peak reverse voltage
continuous reverse voltage
average forward current
CONDITIONS
MIN.
MAX.
300
UNIT
VRRM
VR
−
−
−
V
V
A
300
1.2
IF(AV)
Ttp = 85 °C; see Fig.2;
averaged over any 20 ms period;
see also Fig.4
Tamb = 60 °C; PCB mounting (see
−
0.4
A
Fig.8); see Fig.3;
averaged over any 20 ms period;
see also Fig.4
IFRM
repetitive peak forward current
Ttp = 85 °C
−
−
−
11
A
A
A
Tamb = 60 °C
3.7
5.0
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj = 25 °C prior to surge;
VR = VRRMmax
Tstg
Tj
storage temperature
junction temperature
−65
−65
+175
+175
°C
°C
1999 Oct 20
2
Philips Semiconductors
Product specification
Ripple blocking diode
BYD67
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
IF = 1 A; Tj = Tj max; see Fig.5
IF = 1 A; see Fig.5
−
−
−
−
−
−
1.7
2.3
1
V
V
IR
reverse current
VR = VRRMmax
see Fig.6
;
µA
µA
ns
ns
VR = VRRMmax; Tj = 165 °C;
see Fig.6
−
−
−
−
−
100
350
−
tfr
forward recovery time
turn-on time
when switched to IF = 1 A
in 50 ns; see Fig.9
ton
when switched from VF = 0 to
VF = 3 V; measured between
500
10% and 90% of IFmax
see Fig.11
;
trr
reverse recovery time
diode capacitance
when switched from IF = 0.5 A to
IR = 1 A; measured at
IR = 0.25 A; see Fig.11
−
−
−
150
ns
Cd
f = 1 MHz; VR = 0; see Fig.7
17
−
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
30
K/W
K/W
note 1
150
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.8.
For more information please refer to the ‘General Part of associated Handbook.’
1999 Oct 20
3
Philips Semiconductors
Product specification
Ripple blocking diode
BYD67
GRAPHICAL DATA
MGM273
MGM272
2.0
0.6
handbook, halfpage
handbook, halfpage
I
F(AV)
I
(A)
F(AV)
(A)
1.6
0.4
1.2
0.8
0.4
0
0.2
0
0
0
40
80
120
160
200
(°C)
40
80
120
160
T
200
(°C)
T
tp
amb
a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig.8.
Switched mode application.
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MGM271
MLC301
5
6
handbook, halfpage
handbook, halfpage
P
I
(W)
F
a = 3 2.5 2 1.57
(A)
4
1.42
4
3
2
1
0
2
0
0
1
2
3
4
5
0
0.4
0.8
1.2
1.6
I
2
(A)
V
(V)
F
F(AV)
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
Fig.4 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Fig.5 Forward current as a function of forward
voltage; maximum values.
1999 Oct 20
4
Philips Semiconductors
Product specification
Ripple blocking diode
BYD67
MLC305
MGA853
2
3
10
10
handbook, halfpage
handbook, halfpage
I
R
(µA)
C
d
(pF)
2
10
10
10
1
1
2
3
1
10
0
100
200
10
10
o
( C)
V
(V)
T
R
j
f = 1 MHz; Tj = 25 °C.
VR = VRRMmax
.
Fig.6 Reverse current as a function of junction
temperature; maximum values.
Fig.7 Diode capacitance as a function of reverse
voltage; typical values.
MGC500
50
handbook, halfpage
V
handbook, halfpage
F
25
110%
7
100%
50
t
t
fr
I
F
2
3
10%
t
MGA200
Dimensions in mm.
Fig.8 Device mounted on a printed-circuit board.
Fig.9 Forward recovery time definition.
1999 Oct 20
5
Philips Semiconductors
Product specification
Ripple blocking diode
BYD67
3V
F
V
DUT
(V)
0
50 Ω
10 Ω
100%
90%
I
F
(A)
10%
0
t
on
MBH530
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 10 ns.
Fig.10 Test circuit and turn-on time waveform and definition.
I
F
DUT
(A)
+
0.5
t
rr
25 V
10 Ω
1 Ω
50 Ω
0
0.25
0.5
t
I
R
(A)
MAM057
1.0
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.11 Test circuit and reverse recovery time waveform and definition.
6
1999 Oct 20
Philips Semiconductors
Product specification
Ripple blocking diode
BYD67
PACKAGE OUTLINE
Hermetically sealed glass surface mounted package;
ImplotecTM(1) technology; 2 connectors
SOD87
k
a
(2)
D
D
1
L
L
H
DIMENSIONS (mm are the original dimensions)
D1
L
D
H
UNIT
0
1
2 mm
scale
2.1
2.0
2.0
1.8
3.7
3.3
mm
0.3
Notes
1. Implotec is a trademark of Philips.
2. The marking indicates the cathode.
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
99-03-31
99-06-04
SOD87
100H03
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Preliminary specification
Product specification
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Oct 20
7
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68
SCA
© Philips Electronics N.V. 1999
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Printed in The Netherlands
135002/02/pp8
Date of release: 1999 Oct 20
Document order number: 9397 750 06269
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