BYD71G [NXP]
Ultra fast low-loss controlled avalanche rectifiers; 超快速控制低损耗雪崩整流器
| 型号： | BYD71G |
| 厂家： | 
NXP |
| 描述： | Ultra fast low-loss controlled avalanche rectifiers |
| 文件： | 总11页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BYD71 series
Ultra fast low-loss
controlled avalanche rectifiers
1996 Sep 19
Product specification
Supersedes data of 1996 May 24
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD71 series
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
FEATURES
DESCRIPTION
• Glass passivated
Cavity free cylindrical SOD91 glass
package through Implotec
technology. This package is
(1)
• High maximum operating
temperature
(1) Implotec is a trademark of Philips.
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
a
k
• Available in ammo-pack.
MAM196
Fig.1 Simplified outline (SOD91) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
repetitive peak reverse voltage
BYD71A
CONDITIONS
MIN.
MAX.
UNIT
VRRM
−
−
−
−
−
−
−
50
100
150
200
250
300
400
V
V
V
V
V
V
V
BYD71B
BYD71C
BYD71D
BYD71E
BYD71F
BYD71G
VR
continuous reverse voltage
BYD71A
−
−
−
−
−
−
−
50
100
150
200
250
300
400
V
V
V
V
V
V
V
BYD71B
BYD71C
BYD71D
BYD71E
BYD71F
BYD71G
IF(AV)
average forward current
BYD71A to D
BYD71E to G
Ttp = 55 °C; lead length = 10 mm;
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
−
−
0.56
0.54
A
A
IF(AV)
average forward current
BYD71A to D
Tamb = 60 °C; PCB mounting (see
Fig.16); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
−
−
0.43
0.41
A
A
BYD71E to G
1996 Sep 19
2
Not recommended for new designs
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD71 series
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IFRM
repetitive peak forward current
BYD71A to D
Ttp = 55 °C; see Figs 6 and 7
−
−
4.7
5.0
A
A
BYD71E to G
IFRM
repetitive peak forward current
BYD71A to D
Tamb = 60 °C; see Figs 8 and 9
−
−
−
3.7
3.9
7
A
A
A
BYD71E to G
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj = Tj max prior to surge;
VR = VRRMmax
PRSM
non-repetitive peak reverse power
dissipation
t = 20 µs half sine wave; Tj = Tj max
prior to surge
BYD71A to D
−
250
150
W
W
BYD71E to G
−
Tstg
Tj
storage temperature
junction temperature
−65
−65
+175 °C
+175 °C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
IF = 0.5 A; Tj = Tj max
see Figs 12 and 13
;
BYD71A to D
BYD71E to G
forward voltage
BYD71A to D
BYD71E to G
−
−
−
−
0.84
0.90
V
V
VF
IF = 0.5 A;
see Figs 12 and 13
−
−
−
−
1.05
1.11
V
V
V(BR)R
reverse avalanche breakdown
voltage
IR = 0.1 mA
BYD71A
BYD71B
55
110
165
220
275
330
440
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
1
V
V
BYD71C
V
BYD71D
V
BYD71E
V
BYD71F
V
BYD71G
V
IR
reverse current
VR = VRRMmax
see Fig 14
;
;
µA
VR = VRRMmax
−
−
75
µA
Tj = 165 °C; see Fig 14
trr
reverse recovery time
BYD71A to D
when switched from
IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A
see Fig 18
−
−
−
−
25
50
ns
ns
BYD71E to G
1996 Sep 19
3
Not recommended for new designs
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD71 series
SYMBOL
PARAMETER
diode capacitance
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Cd
f = 1 MHz; VR = 0 V;
see Fig.15
BYD71A to D
BYD71E to G
−
−
25
20
−
−
pF
pF
when switched from
IF = 1 A to VR ≥ 30 V
and dIF/dt = −1 A/µs;
see Fig.17
maximum slope of reverse recovery
current
dIR
--------
dt
BYD71A to D
BYD71E to G
−
−
−
−
4
5
A/µs
A/µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
180
250
K/W
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.16.
For more information please refer to the “General Part of associated Handbook”.
1996 Sep 19
4
Not recommended for new designs
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD71 series
GRAPHICAL DATA
MCD564
MCD565
0.8
0.8
handbook, halfpage
handbook, halfpage
I
I
F(AV)
F(AV)
(A)
(A)
0.6
0.6
lead length 10 mm
lead length 10 mm
0.4
0.2
0.4
0.2
0
0
0
100
200
0
100
200
o
o
T
( C)
T
( C)
tp
tp
BYD71A to D
BYD71E to G
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
MGC526
MGC527
0.6
0.6
handbook, halfpage
handbook, halfpage
I
I
F(AV)
F(AV)
(A)
(A)
0.4
0.4
0.2
0.2
0
0
0
100
200
0
100
200
o
o
T
( C)
T
( C)
amb
amb
BYD71A to D
BYD71E to G
a = 1.42; VR = VRRMmax; δ = 0.5.
a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig.16.
Switched mode application.
Device mounted as shown in Fig.16.
Switched mode application.
Fig.4 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
Fig.5 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
1996 Sep 19
5
Not recommended for new designs
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD71 series
MCD563
5.0
I
FRM
δ =
0.05
(
)
A
0.1
0.2
2.5
0.5
1
0
10
0
1
-2
-1
2
3
4
10
10
10
10
10
10
(
)
t
ms
p
BYD71A to D
Ttp = 55 °C; Rth j-tp = 180 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V.
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MCD562
5.0
δ =
0.05
I
FRM
(
)
A
0.1
0.2
2.5
0.5
1
0
10
-2
-1
0
1
2
3
4
10
10
10
10
10
10
(
)
ms
t
p
BYD71E to G
Ttp = 55 °C; Rth j-tp = 180 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 400 V.
Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Sep 19
6
Not recommended for new designs
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD71 series
MCD561
4
I
FRM
δ =
0.05
(
)
A
3
2
1
0.1
0.2
0.5
1
0
10
-2
-1
0
1
2
3
4
10
10
10
10
10
10
(
)
ms
t
p
BYD71A to D
Tamb = 60 °C; Rth j-a = 250 K/W.
RRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V.
V
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MCD560
4
I
δ =
0.05
FRM
(
)
A
3
2
1
0.1
0.2
0.5
1
0
10
-2
-1
0
1
2
3
4
10
10
10
10
10
10
(
)
t
ms
p
BYD71E to G
Tamb = 60 °C; Rth j-a = 250 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 400 V.
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Sep 19
7
Not recommended for new designs
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD71 series
MCD567
MCD566
0.50
0.50
handbook, halfpage
a = 3
handbook, halfpage
a = 3
2.5
2.5
2
a = 1.57
1.42
P
(W)
P
2
a = 1.57
1.42
(W)
0.25
0.25
0
0
0
0
0.25
0.50
0.25
0.50
I
(A)
I
(A)
F(AV)
F(AV)
BYD71A to D
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
BYD71E to G
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Fig.10 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Fig.11 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
MCD568
MCD569
5
5
handbook, halfpage
handbook, halfpage
I
I
F
F
(A)
(A)
4
4
3
2
1
0
3
2
1
0
0
1
2
3
4
0
1
2
3
V
(V)
V
(V)
F
F
BYD71A to D
BYD71E to G
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
Fig.12 Forward current as a function of forward
voltage; maximum values.
Fig.13 Forward current as a function of forward
voltage; maximum values.
1996 Sep 19
8
Not recommended for new designs
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD71 series
MCD582
MCD559
3
2
10
10
handbook, halfpage
handbook, halfpage
I
R
C
d
(µA)
(pF)
2
10
10
10
A, B, C, D
E, F, G
1
1
1
2
3
10
10
10
0
100
200
V (V)
R
o
(
)
C
T
j
VR = VRRMmax
.
f = 1 MHz; Tj = 25 °C.
Fig.14 Reverse current as a function of junction
temperature; maximum values.
Fig.15 Diode capacitance as a function of reverse
voltage; typical values.
50
handbook, halfpage
I
dbook, halfpage
25
F
dI
F
dt
7
t
rr
50
t
10%
dI
R
dt
100%
2
I
R
MGC499
3
MGA200
Dimensions in mm.
Fig.16 Device mounted on a printed-circuit board.
Fig.17 Reverse recovery definitions.
1996 Sep 19
9
Not recommended for new designs
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD71 series
DUT
I
F
(A)
+
0.5
t
rr
25 V
10 Ω
1 Ω
50 Ω
0
0.25
0.5
t
I
R
(A)
MAM057
1
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.18 Test circuit and reverse recovery time waveform and definition.
1996 Sep 19
10
Not recommended for new designs
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD71 series
PACKAGE OUTLINE
3.5 max
3.0 max
0.55
max
1.7
max
MBC053
29 min
29 min
Dimensions in mm.
The marking band indicates the cathode.
Fig.19 SOD91.
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 19
11
Not recommended for new designs
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