BYD72 [NXP]
Ultra fast low-loss controlled avalanche rectifiers; 超快速控制低损耗雪崩整流器
| 型号： | BYD72 |
| 厂家： | 
NXP |
| 描述： | Ultra fast low-loss controlled avalanche rectifiers |
| 文件： | 总8页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BYD72 series
Ultra fast low-loss
controlled avalanche rectifiers
1998 Dec 03
Preliminary specification
Philips Semiconductors
Preliminary specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD72 series
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
FEATURES
DESCRIPTION
• Glass passivated
Cavity free cylindrical glass SOD120
package through Implotec
technology. This package is
(1)
• High maximum operating
temperature
(1) Implotec is a trademark of Philips.
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
handbokok, halfpage
a
• Available in ammo-pack.
MGL571
Fig.1 Simplified outline (SOD120) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYD72A
−
−
−
−
−
−
−
50
100
150
200
250
300
400
V
V
V
V
V
V
V
BYD72B
BYD72C
BYD72D
BYD72E
BYD72F
BYD72G
VR
continuous reverse voltage
BYD72A
−
−
−
−
−
−
−
50
100
150
200
250
300
400
V
V
V
V
V
V
V
BYD72B
BYD72C
BYD72D
BYD72E
BYD72F
BYD72G
IF(AV)
average forward current
BYD72A to D
BYD72E to G
Tamb = 25 °C; printed-circuit board
mounting, pitch 5 mm, see Fig.8;
averaged over any 20 ms period;
see Figs 2 and 3
−
−
1.02
0.95
A
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
−
15
A
Tj = 25 °C; VR = VRRMmax
Tstg
Tj
storage temperature
junction temperature
−65
−65
+175 °C
+175 °C
see Fig.7
1998 Dec 03
2
Philips Semiconductors
Preliminary specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD72 series
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
IF = 1 A; see Figs 4 and 5
MAX.
UNIT
VF
BYD72A to D
BYD72E to G
reverse current
0.98
1.05
1
V
V
IR
VR = VRRMmax
µA
µA
VR = VRRMmax; Tj = 165 °C; see Fig.6
100
trr
reverse recovery time
BYD72A to D
when switched from IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A; see Fig.9
25
50
ns
ns
BYD72E to G
VFRM
forward recovery voltage
BYD72A to D
when switched to IF = 1 A in 50 ns
1.55
3.40
V
V
BYD72E to G
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
150
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper layer ≥40 µm,
pitch 5 mm; see Fig.8.
1998 Dec 03
3
Philips Semiconductors
Preliminary specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD72 series
GRAPHICAL DATA
MDA811
MDA812
2
1
handbook, halfpage
handbook, halfpage
I
I
F(AV)
F(AV)
(A)
(A)
1.6
0.8
1.2
0.8
0.6
0.4
0.4
0
0.2
0
0
0
40
80
120
160
T
200
(°C)
40
80
120
160
T
200
(°C)
amb
amb
BYD72A to D
BYD72E to G
a = 1.42; VR = VRRMmax; δ = 0.5.
a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig.8.
Device mounted as shown in Fig.8.
Fig.2 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
Fig.3 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MDA820
MDA821
10
10
handbook, halfpage
handbook, halfpage
I
I
F
F
(A)
(A)
8
8
6
4
6
4
2
0
2
0
0
0.4
0.8
1.2
1.6
2
0
0.4
0.8
1.2
1.6
2
V
(V)
V (V)
F
F
BYD72A to D
BYD72E to G
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
Fig.4 Forward current as a function of forward
voltage; typical values.
Fig.5 Forward current as a function of forward
voltage; typical values.
1998 Dec 03
4
Philips Semiconductors
Preliminary specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD72 series
MDA814
MDA825
10
200
handbook, halfpage
handbook, halfpage
T
j
I
(°C)
R
(µA)
160
1
120
80
G
−1
10
40
−2
0
0
10
0
40
80
120
160
200
T (°C)
100
200
300
400
V
(V)
R
j
Fig.7 Maximum permissible junction temperature
as a function of reverse voltage.
Fig.6 Reverse current as a function of junction
temperature; typical values.
50
handbook, halfpage
5
3
50
2
3
MBK812
Dimensions in mm.
Fig.8 Device mounted on a printed-circuit board.
1998 Dec 03
5
Philips Semiconductors
Preliminary specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD72 series
I
F
DUT
(A)
+
0.5
t
rr
25 V
10 Ω
1 Ω
50 Ω
0
0.25
0.5
t
I
R
(A)
MAM057
1.0
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.9 Test circuit and reverse recovery time waveform and definition.
1998 Dec 03
6
Philips Semiconductors
Preliminary specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD72 series
PACKAGE OUTLINE
Hermetically sealed glass package; axial leaded; 2 leads
SOD120
(1)
b
D
G
L
L
1
DIMENSIONS (mm are the original dimensions)
0
2
4 mm
G
D
L
1
UNIT
b
max.
min.
max.
scale
mm
0.6
2.15
3.0
28
Note
1. The marking band indicates the cathode.
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
98-05-25
SOD120
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Dec 03
7
Philips Semiconductors – a worldwide company
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Middle East: see Italy
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Tel. +31 40 27 82785, Fax. +31 40 27 88399
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Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
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Tel. +852 2319 7888, Fax. +852 2319 7700
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Tel. +7 095 755 6918, Fax. +7 095 755 6919
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For all other countries apply to: Philips Semiconductors,
Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
135106/00/01/pp8
Date of release: 1998 Dec 03
Document order number: 9397 750 04771
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