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BYG60MT/R [NXP]

1.5A, 1000V, SILICON, RECTIFIER DIODE;
BYG60MT/R
型号： BYG60MT/R
厂家： NXP    NXP
描述：

1.5A, 1000V, SILICON, RECTIFIER DIODE

软恢复二极管 快速软恢复二极管 局域网 快速软恢复中等电源 光电二极管
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DISCRETE SEMICONDUCTORS  
DATA SHEET  
k, halfpage  
BYG60 series  
Fast soft-recovery  
controlled avalanche rectifiers  
Product specification  
2000 Jul 03  
Supersedes data of 1996 June 05  
Philips Semiconductors  
Product specification  
Fast soft-recovery  
controlled avalanche rectifiers  
BYG60 series  
FEATURES  
DESCRIPTION  
The well-defined void-free case is of a  
transfer-moulded thermo-setting  
plastic.  
• Glass passivated  
DO-214AC surface mountable  
package with glass passivated chip.  
• High maximum operating  
temperature  
• Low leakage current  
• Excellent stability  
cathode  
band  
handbook, 4 columns  
• Guaranteed avalanche energy  
absorption capability  
k
a
• UL 94V-O classified plastic  
package  
• Shipped in 12 mm embossed tape.  
MSA474  
Top view  
Side view  
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VRRM  
repetitive peak reverse voltage  
BYG60D  
−
−
−
−
−
200  
V
V
V
V
V
BYG60G  
400  
600  
800  
1000  
BYG60J  
BYG60K  
BYG60M  
VR  
continuous reverse voltage  
BYG60D  
−
−
−
−
−
−
200  
400  
600  
800  
1000  
1.9  
V
V
V
V
V
A
BYG60G  
BYG60J  
BYG60K  
BYG60M  
IF(AV)  
average forward current  
averaged over any 20 ms period;  
Ttp = 100 °C; see Fig.2  
averaged over any 20 ms period;  
Al2O3 printed-circuit board mounting  
(see Fig.7); Tamb = 60 °C; see Fig.3  
−
−
−
0.9  
0.65  
25  
A
A
A
averaged over any 20 ms period;  
epoxy printed-circuit board mounting  
(see Fig.7); Tamb = 60 °C; see Fig.3  
IFSM  
non-repetitive peak forward current t = 10 ms half sine wave;  
Tj = Tj max prior to surge;  
VR = VRRMmax  
2000 Jul 03  
2
Philips Semiconductors  
Product specification  
Fast soft-recovery  
controlled avalanche rectifiers  
BYG60 series  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
ERSM  
non-repetitive peak reverse  
avalanche energy  
L = 120 mH; Tj = Tj max prior to surge;  
inductive load switched off  
BYG60D to J  
−
−
10  
mJ  
BYG60K and M  
7
mJ  
°C  
°C  
Tstg  
Tj  
storage temperature  
junction temperature  
−65  
−65  
+175  
+175  
see Fig.4  
ELECTRICAL CHARACTERISTICS  
Tj = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
forward voltage  
CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
VF  
IF = 1 A; Tj = Tj max; see Fig.5  
IF = 1 A; see Fig.5  
IR = 0.1 mA  
−
−
−
−
0.98  
1.2  
V
V
V(BR)R  
reverse avalanche  
breakdown voltage  
BYG60D  
BYG60G  
300  
500  
700  
900  
1100  
−
−
−
−
−
−
−
−
−
−
−
−
5
V
V
BYG60J  
V
BYG60K  
V
BYG60M  
V
IR  
reverse current  
VR = VRRMmax  
see Fig.6  
;
µA  
VR = VRRMmax; Tj = 165 °C;  
−
−
100  
µA  
see Fig.6  
trr  
reverse recovery time  
BYG60D to J  
when switched from IF = 0.5 A to  
IR = 1 A; measured at IR = 0.25 A;  
see Fig.8  
−
−
−
−
250  
300  
ns  
ns  
BYG60K and M  
diode capacitance  
BYG60D to J  
Cd  
VR = 0 V; f = 1 MHz  
−
−
30  
25  
−
−
pF  
pF  
BYG60K and M  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
Rth j-tp  
Rth j-a  
thermal resistance from junction to tie-point  
thermal resistance from junction to ambient  
25  
K/W  
K/W  
K/W  
note 1  
note 2  
100  
150  
Notes  
1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm, see Fig.7.  
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.7.  
For more information please refer to the ‘General Part of associated Handbook’.  
2000 Jul 03  
3
Philips Semiconductors  
Product specification  
Fast soft-recovery  
controlled avalanche rectifiers  
BYG60 series  
GRAPHICAL DATA  
MGD481  
MGD482  
4
1.6  
handbook, halfpage  
handbook, halfpage  
I
I
F(AV)  
F(AV)  
(A)  
(A)  
3
1.2  
2
1
0.8  
0.4  
0
0
0
0
100  
200  
100  
200  
T
(°C)  
T
(°C)  
amb  
tp  
VR = VRRMmax; δ = 0.5; a = 1.57.  
Device mounted as shown in Fig.7.  
Solid line: Al2O3 printed-circuit board.  
Dotted line: epoxy printed-circuit board.  
VR = VRRMmax; δ = 0.5; a = 1.57.  
Fig.2 Maximum permissible average forward  
current as a function of tie-point temperature  
(including losses due to reverse leakage).  
Fig.3 Maximum permissible average forward  
current as a function of ambient temperature  
(including losses due to reverse leakage).  
MGD484  
MGD483  
10  
200  
handbook, halfpage  
handbook, halfpage  
I
F
T
j
(A)  
(°C)  
8
160  
6
4
2
0
120  
80  
D
G
J
K
M
40  
0
0
1
2
3
0
400  
800  
1200  
V
(V)  
F
V
(V)  
R
Device mounted as shown in Fig.7.  
Solid line: Al2O3 printed-circuit board.  
Dotted line: epoxy printed-circuit board.  
Solid line: Tj = 25 °C.  
Dotted line: Tj = 175 °C.  
Fig.4 Maximum permissible junction temperature  
as a function of reverse voltage.  
Fig.5 Forward current as a function of forward  
voltage; maximum values.  
2000 Jul 03  
4
Philips Semiconductors  
Product specification  
Fast soft-recovery  
controlled avalanche rectifiers  
BYG60 series  
MGC532  
3
10  
handbook, halfpage  
50  
I
R
(µA)  
2
10  
4.5  
50  
10  
2.5  
1
0
1.25  
MSB213  
100  
200  
o
T ( C)  
j
VR = VRMMmax  
.
Dimensions in mm.  
Material: AL2O3 or epoxy-glass.  
Fig.6 Reverse current as a function of junction  
temperature; maximum values.  
Fig.7 Printed-circuit board for surface mounting.  
I
F
DUT  
(A)  
+
0.5  
t
rr  
25 V  
10 Ω  
1 Ω  
50 Ω  
0
0.25  
0.5  
t
I
R
(A)  
MAM057  
1.0  
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.  
Source impedance: 50 Ω; tr ≤ 15 ns.  
Fig.8 Test circuit and reverse recovery time waveform and definition.  
5
2000 Jul 03  
Philips Semiconductors  
Product specification  
Fast soft-recovery  
controlled avalanche rectifiers  
BYG60 series  
PACKAGE OUTLINE  
Transfer-moulded thermo-setting plastic small rectangular surface mounted package;  
2 connectors  
SOD106  
H
D
A
A
1
c
Q
E
b
(1)  
0
2.5  
5 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
UNIT  
A
A
b
c
D
E
H
Q
1
1.6  
1.4  
2.3  
2.0  
4.5  
4.3  
2.8  
2.4  
5.5  
5.1  
3.3  
2.7  
mm  
0.05  
0.2  
Note  
1. The marking band indicates the cathode.  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
EIAJ  
SOD106  
DO-214AC  
97-06-09  
2000 Jul 03  
6
Philips Semiconductors  
Product specification  
Fast soft-recovery  
controlled avalanche rectifiers  
BYG60 series  
DATA SHEET STATUS  
PRODUCT  
DATA SHEET STATUS  
STATUS  
DEFINITIONS (1)  
Objective specification  
Development This data sheet contains the design target or goal specifications for  
product development. Specification may change in any manner without  
notice.  
Preliminary specification Qualification  
This data sheet contains preliminary data, and supplementary data will be  
published at a later date. Philips Semiconductors reserves the right to  
make changes at any time without notice in order to improve design and  
supply the best possible product.  
Product specification  
Production  
This data sheet contains final specifications. Philips Semiconductors  
reserves the right to make changes at any time without notice in order to  
improve design and supply the best possible product.  
Note  
1. Please consult the most recently issued data sheet before initiating or completing a design.  
DEFINITIONS  
DISCLAIMERS  
Short-form specification  
The data in a short-form  
Life support applications  
These products are not  
specification is extracted from a full data sheet with the  
same type number and title. For detailed information see  
the relevant data sheet or data handbook.  
designed for use in life support appliances, devices, or  
systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips  
Semiconductors customers using or selling these products  
for use in such applications do so at their own risk and  
agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
Limiting values definition Limiting values given are in  
accordance with the Absolute Maximum Rating System  
(IEC 60134). Stress above one or more of the limiting  
values may cause permanent damage to the device.  
These are stress ratings only and operation of the device  
at these or at any other conditions above those given in the  
Characteristics sections of the specification is not implied.  
Exposure to limiting values for extended periods may  
affect device reliability.  
Right to make changes  
Philips Semiconductors  
reserves the right to make changes, without notice, in the  
products, including circuits, standard cells, and/or  
software, described or contained herein in order to  
improve design and/or performance. Philips  
Semiconductors assumes no responsibility or liability for  
the use of any of these products, conveys no licence or title  
under any patent, copyright, or mask work right to these  
products, and makes no representations or warranties that  
these products are free from patent, copyright, or mask  
work right infringement, unless otherwise specified.  
Application information  
Applications that are  
described herein for any of these products are for  
illustrative purposes only. Philips Semiconductors make  
no representation or warranty that such applications will be  
suitable for the specified use without further testing or  
modification.  
2000 Jul 03  
7
Philips Semiconductors – a worldwide company  
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Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,  
Tel. +31 40 27 82785, Fax. +31 40 27 88399  
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Tel. +64 9 849 4160, Fax. +64 9 849 7811  
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,  
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210  
Norway: Box 1, Manglerud 0612, OSLO,  
Tel. +47 22 74 8000, Fax. +47 22 74 8341  
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,  
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773  
Pakistan: see Singapore  
Belgium: see The Netherlands  
Brazil: see South America  
Philippines: Philips Semiconductors Philippines Inc.,  
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,  
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474  
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Romania: see Italy  
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Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,  
Colombia: see South America  
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Tel. +65 350 2538, Fax. +65 251 6500  
Slovakia: see Austria  
Slovenia: see Italy  
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,  
Tel. +45 33 29 3333, Fax. +45 33 29 3905  
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Tel. +55 11 821 2333, Fax. +55 11 821 2382  
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Tel. +49 40 2353 60, Fax. +49 40 2353 6300  
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Tel. +34 93 301 6312, Fax. +34 93 301 4107  
Hungary: see Austria  
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,  
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India: Philips INDIA Ltd, Band Box Building, 2nd floor,  
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Tel. +91 22 493 8541, Fax. +91 22 493 0966  
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,  
Tel. +41 1 488 2741 Fax. +41 1 488 3263  
Indonesia: PT Philips Development Corporation, Semiconductors Division,  
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,  
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080  
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Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,  
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Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,  
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United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,  
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421  
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,  
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Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,  
Tel. +60 3 750 5214, Fax. +60 3 757 4880  
Uruguay: see South America  
Vietnam: see Singapore  
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,  
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087  
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,  
Middle East: see Italy  
Tel. +381 11 3341 299, Fax.+381 11 3342 553  
For all other countries apply to: Philips Semiconductors,  
Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN,  
The Netherlands, Fax. +31 40 27 24825  
Internet: http://www.semiconductors.philips.com  
70  
SCA  
© Philips Electronics N.V. 2000  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
613514/02/pp8  
Date of release: 2000 Jul 03  
Document order number: 9397 750 07185  

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