BYG70D [NXP]

Fast soft-recovery controlled avalanche rectifiers; 快速软恢复控制雪崩整流器
BYG70D
型号: BYG70D
厂家: NXP    NXP
描述:

Fast soft-recovery controlled avalanche rectifiers
快速软恢复控制雪崩整流器

文件: 总6页 (文件大小:40K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
, halfpage  
8  
BYG70 series  
Fast soft-recovery  
controlled avalanche rectifiers  
1996 Jun 05  
Preliminary specification  
Philips Semiconductors  
Preliminary specification  
Fast soft-recovery  
controlled avalanche rectifiers  
BYG70 series  
The well-defined void-free case is of a  
transfer-moulded thermo-setting  
plastic.  
FEATURES  
DESCRIPTION  
Glass passivated  
DO-214AC surface mountable  
package with glass passivated chip.  
High maximum operating  
temperature  
Low leakage current  
Excellent stability  
cathode  
band  
handbook, 4 columns  
Guaranteed avalanche energy  
absorption capability  
k
a
UL 94V-O classified plastic  
package  
Shipped in 12 mm embossed tape.  
MSA474  
Top view  
Side view  
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VRRM  
repetitive peak reverse voltage  
BYG70D  
200  
400  
600  
V
V
V
BYG70G  
BYG70J  
VR  
continuous reverse voltage  
BYG70D  
200  
400  
600  
1.00  
V
V
V
A
BYG70G  
BYG70J  
IF(AV)  
average forward current  
averaged over any 20 ms period;  
Ttp = 100 °C; see Fig.2  
0.53  
0.39  
20  
A
A
A
averaged over any 20 ms period;  
Al2O3 PCB mounting (see Fig.7);  
Tamb = 60 °C; see Fig.3  
averaged over any 20 ms period;  
epoxy PCB mounting (see Fig.7);  
Tamb = 60 °C; see Fig.3  
IFSM  
non-repetitive peak forward current t = 10 ms half sine wave;  
Tj = Tj max prior to surge;  
VR = VRRMmax  
ERSM  
non-repetitive peak reverse  
avalanche energy  
L = 120 mH; Tj = Tj max prior to surge;  
inductive load switched off  
10  
mJ  
Tstg  
Tj  
storage temperature  
junction temperature  
65  
65  
+175 °C  
+175 °C  
see Fig.4  
1996 Jun 05  
2
Philips Semiconductors  
Preliminary specification  
Fast soft-recovery  
controlled avalanche rectifiers  
BYG70 series  
ELECTRICAL CHARACTERISTICS  
Tj = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
forward voltage  
CONDITIONS  
MIN.  
TYP.  
MAX.  
2.1  
UNIT  
VF  
IF = 1 A; Tj = Tj max; see Fig.5  
IF = 1 A; see Fig.5  
IR = 0.1 mA  
V
V
3.6  
V(BR)R  
reverse avalanche  
breakdown voltage  
BYG70D  
BYG70G  
300  
500  
700  
5
V
V
V
BYG70J  
IR  
reverse current  
VR = VRRMmax  
see Fig.6  
;
µA  
µA  
ns  
VR = VRRMmax; Tj = 165 °C;  
see Fig.6  
100  
30  
trr  
reverse recovery time  
diode capacitance  
when switched from IF = 0.5 A to  
IR = 1 A; measured at IR = 0.25 A;  
see Fig.8  
Cd  
VR = 0 V; f = 1 MHz  
30  
pF  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
Rth j-tp  
Rth j-a  
thermal resistance from junction to tie-point  
thermal resistance from junction to ambient  
25  
K/W  
K/W  
K/W  
note 1  
note 2  
100  
150  
Notes  
1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper 35 µm, see Fig.7.  
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper 40 µm, see Fig.7.  
For more information please refer to the “General Part of associated Handbook”.  
1996 Jun 05  
3
Philips Semiconductors  
Preliminary specification  
Fast soft-recovery  
controlled avalanche rectifiers  
BYG70 series  
GRAPHICAL DATA  
MGD485  
MGD486  
2.0  
0.8  
handbook, halfpage  
handbook, halfpage  
I
I
F(AV)  
F(AV)  
(A)  
(A)  
1.5  
0.6  
1.0  
0.5  
0.4  
0.2  
0
0
0
0
100  
200  
100  
200  
T
(°C)  
T
(°C)  
amb  
tp  
VR = VRRMmax; δ = 0.5; a = 1.57.  
VR = VRRMmax; δ = 0.5; a = 1.57.  
Device mounted as shown in Fig.7;  
solid line: Al2O3 PCB; dotted line: epoxy PCB.  
Fig.2 Maximum permissible average forward  
current as a function of tie-point temperature  
(including losses due to reverse leakage).  
Fig.3 Maximum permissible average forward  
current as a function of ambient temperature  
(including losses due to reverse leakage).  
MGD487  
MGD488  
200  
5
handbook, halfpage  
handbook, halfpage  
T
I
j
F
(A)  
(°C)  
4
160  
3
2
1
0
120  
80  
D
G
J
40  
0
0
400  
800  
0
2
4
6
8
V
(V)  
V
(V)  
R
F
Device mounted as shown in Fig.7.  
Solid line: Al2O3 PCB.  
Solid line: Tj = 25 °C.  
Dotted line: epoxy PCB.  
Dotted line: Tj = 175 °C.  
Fig.4 Maximum permissible junction temperature  
as a function of reverse voltage.  
Fig.5 Forward current as a function of forward  
voltage; maximum values.  
1996 Jun 05  
4
Philips Semiconductors  
Preliminary specification  
Fast soft-recovery  
controlled avalanche rectifiers  
BYG70 series  
MGC532  
3
10  
handbook, halfpage  
50  
I
R
(µA)  
2
10  
4.5  
50  
2.5  
10  
1
0
1.25  
MSB213  
100  
200  
o
T ( C)  
j
VR = VRMMmax  
.
Dimensions in mm.  
Material: AL2O3 or epoxy-glass.  
Fig.6 Reverse current as a function of junction  
temperature; maximum values.  
Fig.7 Printed-circuit board for surface mounting.  
I
F
DUT  
(A)  
+
0.5  
t
rr  
25 V  
10 Ω  
1 Ω  
50 Ω  
0
0.25  
0.5  
t
I
R
(A)  
MAM057  
1.0  
Input impedance oscilloscope: 1 M, 22 pF; tr 7 ns.  
Source impedance: 50 ; tr 15 ns.  
Fig.8 Test circuit and reverse recovery time waveform and definition.  
5
1996 Jun 05  
Philips Semiconductors  
Preliminary specification  
Fast soft-recovery  
controlled avalanche rectifiers  
BYG70 series  
PACKAGE OUTLINE  
5.5  
5.1  
4.5  
4.3  
2.3  
2.0  
0.05  
0.2  
3.3  
2.7  
MSA414  
2.8 1.6  
2.4 1.4  
Marking band indicates the cathode.  
Dimensions in mm.  
Fig.9 DO-214AC; SOD106.  
DEFINITIONS  
Data sheet status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1996 Jun 05  
6

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