BYG80F [NXP]
Ultra fast low-loss controlled avalanche rectifiers; 超快速控制低损耗雪崩整流器
| 型号： | BYG80F |
| 厂家： | 
NXP |
| 描述： | Ultra fast low-loss controlled avalanche rectifiers |
| 文件： | 总20页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
68
BYG80 series
Ultra fast low-loss
controlled avalanche rectifiers
1997 Nov 25
Product specification
Supersedes data of 1996 May 24
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
FEATURES
DESCRIPTION
• Glass passivated
DO-214AC surface mountable
package with glass passivated chip.
• High maximum operating
temperature
• Low leakage current
• Excellent stability
cathode
band
handbook, 4 columns
• Guaranteed avalanche energy
absorption capability
k
a
• UL 94V-O classified plastic
package
• Shipped in 12 mm embossed tape.
MSA474
Top view
Side view
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYG80A
−
−
−
−
−
−
−
50
100
150
200
300
400
600
V
V
V
V
V
V
V
BYG80B
BYG80C
BYG80D
BYG80F
BYG80G
BYG80J
VR
continuous reverse voltage
BYG80A
−
−
−
−
−
−
−
50
100
150
200
300
400
600
V
V
V
V
V
V
V
BYG80B
BYG80C
BYG80D
BYG80F
BYG80G
BYG80J
IF(AV)
average forward current
BYG80A to D
BYG80F; BYG80G
BYG80J
Ttp = 100 °C; see Figs 2, 3 and 4
averaged over any 20 ms period;
see also Figs 17, 18 and 19
−
−
−
2.4
2.3
2.0
A
A
A
IF(AV)
average forward current
BYG80A to D
BYG80F; BYG80G
BYG80J
Tamb = 60 °C; AL2O3 PCB mounting
(see Fig.27); see Figs 5, 6 and 7
averaged over any 20 ms period;
see also Figs 17, 18 and 19
−
−
−
1.25
1.15
0.95
A
A
A
1997 Nov 25
2
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IF(AV)
average forward current
BYG80A to D
Tamb = 60 °C; epoxy PCB mounting
(see Fig.27); see Figs 5, 6 and 7
averaged over any 20 ms period;
see also Figs 17, 18 and 19
−
−
−
0.95
0.85
0.65
A
A
A
BYG80F; BYG80G
BYG80J
IFRM
IFRM
IFRM
repetitive peak forward current
BYG80A to D
Ttp = 100 °C; see Figs 8, 9 and 10
−
−
−
21
21
18
A
A
A
BYG80F; BYG80G
BYG80J
repetitive peak forward current
BYG80A to D
Tamb = 60 °C; AL2O3 PCB mounting;
see Figs 11, 12 and 13
−
−
−
11
11
9
A
A
A
BYG80F; BYG80G
BYG80J
repetitive peak forward current
BYG80A to D
Tamb = 60 °C; epoxy PCB mounting;
see Figs 14, 15 and 16
−
−
−
8
8
6
A
A
A
BYG80F; BYG80G
BYG80J
IFSM
non-repetitive peak forward current t = 8.3 ms half sine wave; Tj = 25 °C
prior to surge; VR = VRRMmax
BYG80A to D
−
−
−
36
32
A
A
BYG80F; BYG80G; BYG80J
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj = Tj max prior to surge;
inductive load switched off
10 mJ
Tstg
Tj
storage temperature
junction temperature
−65
−65
+175 °C
+175 °C
see Fig.20
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
IF = 1 A; Tj = Tj max
;
see Figs 21, 22 and 23
BYG80A to D
BYG80F; BYG80G
BYG80J
−
−
−
−
−
−
0.67
0.73
0.96
V
V
V
VF
forward voltage
BYG80A to D
BYG80F; BYG80G
BYG80J
IF = 1 A; see Figs 21, 22 and 23
−
−
−
−
−
−
0.93
0.98
1.20
V
V
V
1997 Nov 25
3
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
SYMBOL
PARAMETER
CONDITIONS
IR = 0.1 mA
MIN.
TYP.
MAX.
UNIT
V(BR)R
reverse avalanche
breakdown voltage
BYG80A
BYG80B
55
110
165
220
330
440
675
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
V
V
V
V
V
V
V
BYG80C
BYG80D
BYG80F
BYG80G
BYG80J
IR
IR
reverse current
VR = VRRMmax
;
10
µA
see Figs 24 and 25
reverse current
VR = VRRMmax; Tj = 165 °C;
see Figs 24 and 25
BYG80A to D
−
−
−
−
100
150
µA
µA
BYG80F; BYG80G and J
reverse recovery time
BYG80A to D
trr
when switched from IF = 0.5 A to
IR = 1 A; measured at IR = 0.25 A;
see Fig.29
−
−
−
−
25
50
ns
ns
BYG80F; BYG80G and J
diode capacitance
BYG80A to D
Cd
f = 1 MHz; VR = 0; see Fig.26
−
−
−
90
70
65
−
−
−
pF
pF
pF
BYG80F; BYG80G
BYG80J
when switched from IF = 1 A to
VR ≥ 30 V and dIF/dt = −1 A/µs;
see Fig.28
maximum slope of reverse
recovery current
dIR
--------
dt
BYG80A to D
−
−
−
−
3
4
A/µs
A/µs
BYG80F; BYG80G and J
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
25
100
150
K/W
K/W
K/W
note 1
note 2
Notes
1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm, see Fig.27.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.27.
For more information please refer to the “General Part of associated Handbook”.
1997 Nov 25
4
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
GRAPHICAL DATA
MGL081
MBK454
4
4
handbook, halfpage
handbook, halfpage
I
I
F(AV)
F(AV)
(A)
(A)
3
3
2
1
0
2
1
0
0
0
200
40
80
120
160
T
200
(°C)
100
o
( C)
T
tp
tp
BYG80A to D
BYG80F and G
Switched mode application; VR = VRRMmax; δ = 0.5; a = 1.42.
Switched mode application; VR = VRRMmax; δ = 0.5; a = 1.42.
Fig.3 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
MGL094
MGL079
4.0
2
handbook, halfpage
handbook, halfpage
I
I
FAV
(A)
F(AV)
(A)
3.0
1.5
(1)
2.0
1.0
0
1
(2)
0.5
0
0
40
80
120
160
T
200
0
200
100
ο
( C)
ο
T
( C)
amb
tp
BYG80A to D
BYG80J
Switched mode application.
VR = VRRMmax; δ = 0.5; a = 1.42.
Switched mode application; VR = VRRMmax; δ = 0.5; a = 1.42
Device mounted as shown in Fig.27;
1: Al2O3 PCB; 2: epoxy PCB.
Fig.4 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.5 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
1997 Nov 25
5
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
MGL080
MGL092
1.6
2
handbook, halfpage
handbook, halfpage
I
I
F(AV)
(A)
F(AV)
(A)
1.5
1.2
(1)
(2)
(1)
1
0.8
0.4
(2)
0.5
0
0
0
0
200
100
40
80
120
160
Tamb ( C)
200
ο
( C)
T
o
amb
BYG80F and G
BYG80J
Switched mode application; VR = VRRMmax; δ = 0.5; a = 1.42
Switched mode application; VR = VRRMmax; δ = 0.5; a = 1.42
Device mounted as shown in Fig.27;
1: Al2O3 PCB; 2: epoxy PCB.
Device mounted as shown in Fig.27;
1: Al2O3 PCB; 2: epoxy PCB.
Fig.6 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
Fig.7 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MGL086
30
I
FRM
(A)
δ = 0.05
20
0.1
10
0.2
0.5
1
0
10
−2
−1
2
3
4
10
1
10
10
10
10
t
(ms)
P
BYG80A to D
Ttp = 100 °C; Rth j-tp = 25 K/W.
VRRMmax during 1 - δ; curves include derating for Tj max at VRRM = 200 V.
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1997 Nov 25
6
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
MGL087
30
I
FRM
(A)
δ = 0.05
20
0.1
10
0.2
0.5
1
0
10
−2
−1
2
3
4
10
1
10
10
10
10
t
(ms)
P
BYGF and G
Ttp = 100 °C; Rth j-tp = 25 K/W.
RRMmax during 1 - δ; curves include derating for Tj max at VRRM = 400 V.
V
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MGL096
20
δ = 0.05
I
FRM
(A)
16
0.1
0.2
12
8
0.5
1
4
0
10
−2
−1
2
3
4
10
1
10
10
10
10
t
(ms)
P
BYG80J
Ttp = 100 °C; Rth j-tp = 25 K/W.
VRRMmax during 1 - δ; curves include derating for Tj max at VRRM = 600 V.
Fig.10 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1997 Nov 25
7
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
MGL082
20
I
FRM
(A)
16
δ = 0.05
12
8
0.1
0.2
4
0
0.5
1
−2
−1
2
3
10
10
1
10
10
10
t
(ms)
p
BYG80A to D
Tamb = 60 °C; Rth j-a = 100 K/W.
VRRMmax during 1 - δ; curves include derating for Tj max at VRRM = 200 V.
Fig.11 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MGL083
20
I
FRM
(A)
16
12
8
δ = 0.05
0.1
0.2
4
0
0.5
1
−2
−1
2
3
10
10
1
10
10
10
t
(ms)
p
BYG80F and G
Tamb = 60 °C; Rth j-a = 100 K/W.
VRRMmax during 1 - δ; curves include derating for Tj max at VRRM = 400 V.
Fig.12 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1997 Nov 25
8
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
MGL093
10
δ = 0.05
I
FRM
(A)
8
0.1
0.2
6
4
2
0.5
1
0
10
−2
−1
2
3
4
10
1
10
10
10
10
t
(ms)
P
BYG80J
Tamb = 60 °C; Rth j-a = 100 K/W.
VRRMmax during 1 - δ; curves include derating for Tj max at VRRM = 600 V.
Fig.13 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MGL084
10
I
FRM
(A)
δ = 0.05
8
6
4
2
0
0.1
0.2
0.5
1
−2
−1
2
3
10
10
1
10
10
10
t
(ms)
p
BYG80A to D
Tamb = 60 °C; Rth j-a = 150 K/W.
VRRMmax during 1 - δ; curves include derating for Tj max at VRRM = 200 V.
Fig.14 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1997 Nov 25
9
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
MGL085
10
I
FRM
(A)
δ = 0.05
8
6
0.1
4
0.2
0.5
1
2
0
10
−2
−1
2
3
10
1
10
10
10
t
(ms)
p
BYG80F and G
amb = 60 °C; Rth j-a = 150 K/W.
VRRMmax during 1 - δ; curves include derating for Tj max at VRRM = 400 V.
T
Fig.15 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MGL097
8
I
FRM
(A)
δ = 0.05
6
4
2
0
0.1
0.2
0.5
1
−2
−1
2
3
4
10
10
10
10
10
10
t
(ms)
P
BYG80J
Tamb = 60 °C; Rth j-a = 150 K/W.
VRRMmax during 1 - δ; curves include derating for Tj max at VRRM = 600 V.
Fig.16 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1997 Nov 25
10
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
MGL088
MGL089
8
8
handbook, halfpage
handbook, halfpage
P
P
(W)
(W)
a = 3 2.5
2 1.57 1.42
a = 3 2.5
2 1.57 1.42
6
4
2
0
6
4
2
0
0
0
2
4
2
4
I
(A)
I
(A)
F(AV)
F(AV)
BYG80A to D
BYG80F and G
a = IF(RMS)/IF(AV); VRRMmax
.
a = IF(RMS)/IF(AV); VRRMmax
.
Fig.17 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Fig.18 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
MGL099
MBK455
8
200
handbook, halfpage
handbook, halfpage
P
(W)
T
a = 3 2.5
2
1.57 1.42
j
6
4
2
0
(°C)
100
0
0
2
4
0
50
100
V
(%V
)
Rmax
I
(A)
R
F(AV)
BYG80J
Solid line = VR.
a = IF(RMS)/IF(AV); VRRMmax
.
Dotted line = VRRM; δ = 0.5.
Fig.19 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Fig.20 Maximum permissible junction
temperature as a function of maximum
reverse voltage percentage.
1997 Nov 25
11
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
MGL090
MGL091
10
10
handbook, halfpage
handbook, halfpage
I
I
F
(A)
F
(A)
8
8
(1)
(2)
6
4
2
0
6
4
(1)
(2)
2
0
0
0
1
2
3
0.4
0.8
1.2
1.6
2.0
V
(V)
V
(V)
F
F
BYG80A to D
(1) Tj = 175 °C.
(2) Tj = 25 °C.
BYG80F and G
(1) Tj = 175 °C.
(2) Tj = 25 °C.
Fig.21 Forward current as a function of forward
voltage; maximum values.
Fig.22 Forward current as a function of forward
voltage; maximum values.
MGL098
MGL095
3
10
10
handbook, halfpage
handbook, halfpage
I
F
I
(A)
R
(µA)
8
2
10
6
4
2
0
(1)
(2)
10
1
0
1
2
3
0
100
200
V
(V)
T (°C)
j
F
BYG80J
BYG80A to D
(1) Tj = 175 °C.
(2) Tj = 25 °C.
VR = VRMMmax
.
Fig.23 Forward current as a function of forward
voltage; maximum values.
Fig.24 Reverse current as a function of junction
temperature; maximum values.
1997 Nov 25
12
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
MGL078
MGC549
2
3
10
10
handbook, halfpage
handbook, halfpage
I
R
(µA)
C
d
(pF)
2
10
(1)
(2)
10
(3)
10
1
1
1
3
2
10
10
10
0
100
200
T (°C)
V
(V)
j
R
f = 1 MHz; Tj = 25 °C.
(1) BYG80A to D
(2) BYG80F and G
(3) BYG80J
BYG80F to J
VR = VRMMmax
.
Fig.25 Reverse current as a function of junction
temperature; maximum values.
Fig.26 Diode capacitance as a function of reverse
voltage; typical values.
50
I
handbook, halfpage
F
dI
F
dt
4.5
t
rr
50
t
10%
dI
R
2.5
dt
100%
I
R
MGC499
1.25
MSB213
Dimensions in mm.
Fig.27 Printed-circuit board for surface mounting.
Fig.28 Reverse recovery definitions.
1997 Nov 25
13
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
I
F
DUT
(A)
+
0.5
t
rr
25 V
10 Ω
1 Ω
50 Ω
0
0.25
0.5
t
I
R
(A)
MAM057
1.0
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.29 Test circuit and reverse recovery time waveform and definition.
1997 Nov 25
14
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
PACKAGE OUTLINE
Transfer-moulded thermo-setting plastic small rectangular surface mounted package;
2 connectors
SOD106
H
D
A
A
1
c
Q
E
b
(1)
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A
b
c
D
E
H
Q
1
1.6
1.4
2.3
2.0
4.5
4.3
2.8
2.4
5.5
5.1
3.3
2.7
mm
0.05
0.2
Note
1. The marking band indicates the cathode.
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
SOD106
DO-214AC
97-06-09
1997 Nov 25
15
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Nov 25
16
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
NOTES
1997 Nov 25
17
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
NOTES
1997 Nov 25
18
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
NOTES
1997 Nov 25
19
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Belgium: see The Netherlands
Brazil: see South America
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Portugal: see Spain
Romania: see Italy
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Colombia: see South America
Czech Republic: see Austria
Slovakia: see Austria
Slovenia: see Italy
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Uruguay: see South America
Vietnam: see Singapore
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
For all other countries apply to: Philips Semiconductors,
Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p,
P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1997
SCA56
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
117027/1200/02/pp20
Date of release: 1997 Nov 25
Document order number: 9397 750 02662
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