BYG85B/T3 [NXP]
0.98A, 100V, SILICON, SIGNAL DIODE, DO-214AC, PLASTIC, SMA, PMOS, 2 PIN;
| 型号： | BYG85B/T3 |
| 厂家： | 
NXP |
| 描述： | 0.98A, 100V, SILICON, SIGNAL DIODE, DO-214AC, PLASTIC, SMA, PMOS, 2 PIN 局域网 光电二极管 |
| 文件： | 总12页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
D168
BYG85B
Fast soft-recovery rectifier
1998 Nov 25
Product specification
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
BYG85B
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
FEATURES
DESCRIPTION
• Glass passivated
DO-214AC surface mountable
package with glass passivated chip.
• High maximum operating
temperature
• Low leakage current
• Excellent stability
cathode
band
handbook, 4 columns
• UL 94V-O classified plastic
package
k
a
• Shipped in 12 mm embossed tape.
MSA474
Top view
Side view
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
repetitive peak reverse voltage
continuous reverse voltage
average forward current
CONDITIONS
MIN.
MAX.
100
100
2.5
UNIT
VRRM
VR
−
−
−
V
V
A
IF(AV)
Ttp = 100 °C; averaged over any
20 ms period; see Figs 2 and 7
IF(AV)
average forward current
average forward current
Tamb = 60 °C; AL2O3 PCB mounting
(see Fig.11); averaged over any
20 ms period; see Fig.3
−
−
1.3
A
A
IF(AV)
Tamb = 60 °C; epoxy PCB mounting
(see Fig.11); averaged over any
20 ms period; see Fig.3
0.98
IFRM
IFRM
repetitive peak forward current
repetitive peak forward current
Ttp = 100 °C; see Fig.3
−
−
23
12
A
A
Tamb = 60 °C; AL2O3 PCB mounting;
see Fig.5
IFRM
IFSM
repetitive peak forward current
Tamb = 60 °C; epoxy PCB mounting;
see Fig.6
−
−
8.5
35
A
A
non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max
prior to surge; VR = VRRMmax
Tstg
Tj
storage temperature
junction temperature
−65
−65
+175
+175
°C
°C
1998 Nov 25
2
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
BYG85B
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MIN.
−
TYP.
MAX.
0.78
0.98
−
UNIT
VF
IF = 2 A; Tj = Tj max; see Fig.8
IF = 2 A; see Fig.8
IR = 0.1 mA
−
−
−
V
V
V
−
V(BR)R
IR
reverse avalanche
breakdown voltage
120
reverse current
VR = VRRMmax; see Fig.9
−
−
−
−
5
µA
µA
VR = VRRMmax; Tj = 165 °C;
150
see Fig.9
trr
reverse recovery time
diode capacitance
when switched from IF = 0.5 A to
IR = 1 A; measured at IR = 0.25 A;
see Fig.13
−
−
12.5
ns
Cd
f = 1 MHz; VR = 0; see Fig.10
−
−
110
−
pF
when switched from IF = 1 A to
VR ≥ 30 V and dIF/dt = −1 A/µs;
see Fig.12
−
2
A/µs
maximum slope of reverse
recovery current
dIR
--------
dt
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
25
100
150
K/W
K/W
K/W
note 1
note 2
Notes
1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm, see Fig.11.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.11.
For more information please refer to the ‘General Part of associated Handbook’.
1998 Nov 25
3
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
BYG85B
GRAPHICAL DATA
MBK211
MBK210
2.0
5
handbook, halfpage
handbook, halfpage
I
I
F(AV)
F(AV)
(A)
(A)
1.6
4
1.2
0.8
3
2
(2)
(1)
0.4
1
0
0
0
40
80
120
160
T
200
(°C)
0
40
80
120
160
T
200
(°C)
amb
tp
a = 1.42; VR = VRRMmax; δ = 0.5; Switched mode application;
Device mounted as shown in Fig.11.
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
1: epoxy PCB
2: Al2O3 PCB.
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MBK212
30
I
FRM
(A)
δ = 0.05
20
0.1
0.2
10
0.5
1.0
0
10
−2
−1
2
3
4
10
1
10
10
10
10
t
(ms)
p
Ttp = 100 °C; Rth j-tp = 25 K/W.
VRRMmax during 1 - δ; curves include derating for Tj max at VRRM = 100 V.
Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1998 Nov 25
4
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
BYG85B
MBK213
20
I
FRM
(A)
16
δ = 0.05
12
0.1
8
0.2
4
0.5
1.0
0
10
−2
−1
2
3
4
10
1
10
10
10
10
t
(ms)
p
Tamb = 60 °C; Rth j-a = 100 K/W.
VRRMmax during 1 - δ; curves include derating for Tj max at VRRM = 100 V.
Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MBK214
10
δ = 0.05
I
FRM
(A)
8
0.1
0.2
6
4
2
0.5
1.0
0
10
−2
−1
2
3
4
10
1
10
10
10
10
t
(ms)
p
Tamb = 60 °C; Rth j-a = 150 K/W.
VRRMmax during 1 - δ; curves include derating for Tj max at VRRM = 100 V.
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1998 Nov 25
5
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
BYG85B
MBK209
MBK215
6
4
handbook, halfpage
handbook, halfpage
I
F
P
(W)
a = 3 2.5 2
1.57
1.42
(A)
5
3
2
1
0
4
3
2
1
0
0
0.4
0.8
1.2
1.6
2.0
0
1
2
3
I
(A)
F(AV)
V
(V)
F
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
Fig.7 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Fig.8 Forward current as a function of forward
voltage; maximum values.
MBK225
MGC550
2
3
10
10
handbook, halfpage
handbook, halfpage
I
C
R
d
(µA)
(pF)
2
10
10
1
10
2
1
10
10
0
100
200
V
(V)
T (°C)
R
j
VR = VRMMmax
.
f = 1 MHz; Tj = 25 °C.
Fig.9 Reverse current as a function of junction
temperature; maximum values.
Fig.10 Diode capacitance as a function of reverse
voltage; typical values.
1998 Nov 25
6
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
BYG85B
50
I
handbook, halfpage
F
dI
F
dt
t
rr
4.5
t
10%
50
dI
R
dt
2.5
100%
I
R
MGC499
1.25
MSB213
Dimensions in mm.
Fig.11 Printed-circuit board for surface mounting.
Fig.12 Reverse recovery definitions.
I
F
(A)
DUT
0.5
t
rr
0
0.25
0.5
0.5 A
50 Ω
t
+
I
R
(A)
MAM418
1.0
Rise time oscilloscope: tr ≤ 2 ns.
Turn-on time switch: t ≤ 3 ns.
Fig.13 Test circuit and reverse recovery time waveform and definition.
7
1998 Nov 25
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
BYG85B
PACKAGE OUTLINE
Transfer-moulded thermo-setting plastic small rectangular surface mounted package;
2 connectors
SOD106
H
D
A
A
1
c
Q
E
b
(1)
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A
b
c
D
E
H
Q
1
1.6
1.4
2.3
2.0
4.5
4.3
2.8
2.4
5.5
5.1
3.3
2.7
mm
0.05
0.2
Note
1. The marking band indicates the cathode.
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
SOD106
DO-214AC
97-06-09
1998 Nov 25
8
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
BYG85B
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Nov 25
9
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
BYG85B
NOTES
1998 Nov 25
10
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
BYG85B
NOTES
1998 Nov 25
11
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© Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
135106/00/01/pp12
Date of release: 1998 Nov 25
Document order number: 9397 750 04762
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