BYG90-20T/R [NXP]
1A, 20V, SILICON, SIGNAL DIODE;
| 型号： | BYG90-20T/R |
| 厂家： | 
NXP |
| 描述： | 1A, 20V, SILICON, SIGNAL DIODE 整流二极管 |
| 文件： | 总7页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
BYG90-40 series
Schottky barrier rectifier diodes
1996 May 06
Product specification
Philips Semiconductors
Product specification
Schottky barrier rectifier diodes
BYG90-40 series
FEATURES
• Low switching losses
• Capability of absorbing very high
surge current
cathode identifier
handbook, 4 columns
• Fast recovery time
• Guard ring protected
• Plastic SMD package.
k
aa
APPLICATIONS
MAM129 - 1
Top view
• Low power switched-mode power
supplies
• Rectifying
• Polarity protection.
Fig.1 Simplified outline (SOD106A), pin configuration and symbol.
DESCRIPTION
The BYG 90-40 series consists of
Schottky barrier rectifier diodes,
fabricated in planar technology, and
encapsulated in rectangular
SOD106A plastic SMD packages.
1996 May 06
2
Philips Semiconductors
Product specification
Schottky barrier rectifier diodes
BYG90-40 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VR
continuous reverse voltage
BYG90-20
20
V
V
V
−
−
−
BYG90-30
30
40
BYG90-40
VRRM
repetitive peak reverse voltage
BYG90-20
20
30
40
V
V
V
−
−
−
BYG90-30
BYG90-40
VRWM
crest working reverse voltage
BYG90-20
20
30
40
1
V
V
V
A
−
−
−
−
BYG90-30
BYG90-40
IF(AV)
Tamb = 65 °C; see Fig.2;
average forward current
Rth j-a = 80 K/W; note 1;
VR(equiv) = 0.2 V; note 2
IFSM
non-repetitive peak forward current
t = 8.3 µs half sine wave;
JEDEC method
30
A
A
−
−
IRSM
Tstg
Tj
non-repetitive peak reverse current
storage temperature
tp = 100 µs
0.5
+125
125
°C
°C
−65
junction temperature
−
Notes
1. Refer to SOD106A standard mounting conditions.
2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power
losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses
PR and IF(AV) rating will be available on request.
1996 May 06
3
Philips Semiconductors
Product specification
Schottky barrier rectifier diodes
BYG90-40 series
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.2; note 1
IF = 1 A
−
−
−
−
−
−
−
−
−
−
550
mV
IF = 3 A
850
450
1
mV
mV
mA
mA
IF = 1 A; Tj = 100 °C
VR = VRRMmax; note 1; see Fig.3
IR
reverse current
VR = VRRMmax; Tj = 100 °C; note 1;
10
see Fig.3
Cd
diode capacitance
VR = 4 V; f = 1 MHz; see Fig.4
−
−
75
pF
Note
1. Pulsed test: tp = 300 µs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
note 1
VALUE
UNIT
K/W
Rth j-a
thermal resistance from junction to ambient
80
Note
1. Refer to SOD106A standard mounting conditions.
1996 May 06
4
Philips Semiconductors
Product specification
Schottky barrier rectifier diodes
BYG90-40 series
GRAPHICAL DATA
MLC389
MLC388
4
4
10
10
handbook, halfpage
handbook, halfpage
(1)
I
I
R
F
(µA)
(mA)
(2)
(3)
3
3
10
10
(1)
2
2
10
10
(2)
(3)
(4)
(4)
10
10
1
1
0
10
20
30
40
0
0.2
0.4
0.6
0.8
1.0
V
(V)
R
V
(V)
F
(1) Tamb = 125 °C.
(2) Tamb = 100 °C.
(3) Tamb = 75 °C.
(4) Tamb = 25 °C.
(1) Tamb = 125 °C.
(2) Tamb = 100 °C.
(3) Tamb = 75 °C.
(4) Tamb = 25 °C.
Fig.2 Forward current as a function of forward
voltage; typical values.
Fig.3 Reverse current as a function of reverse
voltage; typical values.
MLC390
3
10
handbook, halfpage
C
d
(pF)
2
10
10
0
8
16
24
32
40
V
(V)
R
f = 1 MHz.
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
1996 May 06
5
Philips Semiconductors
Product specification
Schottky barrier rectifier diodes
BYG90-40 series
PACKAGE OUTLINE
5.5
5.1
4.57
max
2.65
max
0.1
0.2
1.5
1.2
MSA356 - 1
cathode
identifier
2.5 1.5
Dimensions in mm.
The marking bar indicates the cathode.
Fig.5 SOD106A.
1996 May 06
6
Philips Semiconductors
Product specification
Schottky barrier rectifier diodes
BYG90-40 series
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 May 06
7
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