BYG90-90 [NXP]
Schottky barrier rectifier diode; 肖特基势垒整流二极管
| 型号： | BYG90-90 |
| 厂家： | 
NXP |
| 描述： | Schottky barrier rectifier diode |
| 文件： | 总6页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
BYG90-90
Schottky barrier rectifier diode
1996 May 13
Product specification
Supersedes data of December 1994
File under Discrete Semiconductors, SC01
Philips Semiconductors
Product specification
Schottky barrier rectifier diode
BYG90-90
FEATURES
DESCRIPTION
The BYG 90-90 is a Schottky barrier rectifier diode, fabricated in planar
• Low switching losses
technology, and encapsulated in the rectangular SOD106A plastic SMD
package.
• High breakdown voltage
• Capability of absorbing very high
surge current
• Fast recovery time
• Guard ring protected
• Plastic SMD package.
cathode identifier
handbook, 4 columns
k
a
APPLICATIONS
• Low power switched-mode power
supplies
MAM129 - 1
Top view
• Rectifying
Fig.1 Simplified outline (SOD106A) and symbol.
• Polarity protection.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VR
PARAMETER
continuous reverse voltage
repetitive peak reverse voltage
crest working reverse voltage
average forward current
CONDITIONS
MIN.
MAX.
90
UNIT
V
V
V
A
VRRM
VRWM
IF(AV)
90
90
1
Tamb = 100 °C; see Fig.2;
Rth j-a = 13.5 K/W; note 1;
VR(equiv) = 0.2 V; note 2
−
IFSM
non-repetitive peak forward current
t = 8.3 ms half sine wave;
JEDEC method
30
A
A
−
−
IRSM
Tstg
Tj
non-repetitive peak reverse current
storage temperature
tp = 100 µs
0.5
+150
150
°C
°C
−65
junction temperature
−
Notes
1. Refer to SOD106A standard mounting conditions.
2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power
losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses
PR and IF(AV) rating will be available on request.
1996 May 13
2
Philips Semiconductors
Product specification
Schottky barrier rectifier diode
BYG90-90
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
see Fig.2; note 1
MIN.
TYP.
MAX.
UNIT
VF
IF = 0.06 A
−
−
−
−
−
−
−
−
−
−
360
mV
IF = 1 A
790
690
0.5
5
mV
mV
mA
mA
IF = 1 A; Tj = 100 °C
VR = VRRMmax; note 1; see Fig.3
IR
reverse current
VR = VRRMmax; Tj = 100 °C; note 1;
see Fig.3
Cd
diode capacitance
VR = 4 V; f = 1 MHz; see Fig.4
−
−
100
pF
Note
1. Pulsed test: tp = 300 µs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
note 1
VALUE
UNIT
K/W
Rth j-a
thermal resistance from junction to ambient
80
Note
1. Refer to SOD106A standard mounting conditions.
1996 May 13
3
Philips Semiconductors
Product specification
Schottky barrier rectifier diode
BYG90-90
GRAPHICAL DATA
MLC498
MLC497
4
5
10
10
handbook, halfpage
handbook, halfpage
I
R
I
F
(1)
(µA)
(mA)
4
10
3
(2)
10
(3)
(4)
3
10
(1)
(2)
(3)
(4)
(5)
2
10
2
10
10
10
(5)
1
0
1
0
20
40
60
80
V
100
0.4
0.8
1.2
1.6
V
(V)
F
(V)
R
(1) Tamb = 150 °C.
(2) Tamb = 125 °C.
(3) Tamb = 100 °C.
(4) Tamb = 85 °C.
(1) Tamb = 150 °C.
(2) Tamb = 125 °C.
(3) Tamb = 100 °C.
(4) Tamb = 85 °C.
(5)
Tamb = 25 °C.
(5)
Tamb = 25 °C.
Fig.3 Reverse current as a function of reverse
voltage; typical values.
Fig.2 Forward current as a function of forward
voltage; typical values.
MLC499
3
10
handbook, halfpage
C
d
(pF)
2
10
10
0
50
100
V
(V)
R
f = 1 MHz.
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
1996 May 13
4
Philips Semiconductors
Product specification
Schottky barrier rectifier diode
BYG90-90
PACKAGE OUTLINE
5.5
5.1
4.57
max
2.65
max
0.1
0.2
1.5
1.2
MSA356 - 1
cathode
identifier
2.5 1.5
Dimensions in mm.
The marking bar indicates the cathode.
Fig.5 SOD106A.
1996 May 13
5
Philips Semiconductors
Product specification
Schottky barrier rectifier diode
BYG90-90
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 May 13
6
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