BYQ28ED-200/T3 [NXP]
DIODE 5 A, 200 V, SILICON, RECTIFIER DIODE, Rectifier Diode;
| 型号： | BYQ28ED-200/T3 |
| 厂家： | 
NXP |
| 描述： | DIODE 5 A, 200 V, SILICON, RECTIFIER DIODE, Rectifier Diode 超快软恢复二极管 快速软恢复二极管 |
| 文件： | 总10页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYQ28 series E and ED
Rectifier diodes ultrafast, rugged
Rev. 04 — 5 December 2007
Product data sheet
1. Product profile
1.1 General description
Ultrafast, dual common cathode, epitaxial rectifier diodes in a SOT78 (TO-220AB) and a
SOT428 (DPAK) plastic package.
1.2 Features
I Fast switching
I Low thermal resistance
I Soft recovery characteristic
I Reverse surge capability
I Low forward voltage drop
I High thermal cycling performance
1.3 Applications
I Output rectifiers in high-frequency switched-mode power supplies
1.4 Quick reference data
I VRRM ≤ 200 V
I VF ≤ 0.895 V
I IO(AV) ≤ 10 A
I trr = 10 ns (typ)
2. Pinning information
Table 1.
Pinning
Pin Description
Simplified outline
Symbol
1
2
3
anode 1
cathode
anode 2
mb
mb
[1]
1
3
2
sym084
mb mounting base; cathode
2
1
3
SOT428 (DPAK)
1
2 3
SOT78 (3-lead TO-220AB)
[1] It is not possible to connect to pin 2 of the SOT428 package.
BYQ28 series E and ED
NXP Semiconductors
Rectifier diodes ultrafast, rugged
3. Ordering information
Table 2.
Ordering information
Type number
Package
Name
Description
Version
BYQ28E-200
TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
SOT78
BYQ28ED-200
DPAK
plastic single-ended surface-mounted package (DPAK); 3-leads (one lead SOT428
cropped)
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VRRM
VRWM
VR
Parameter
Conditions
Min
Max
200
200
200
10
Unit
V
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
-
-
-
-
V
square waveform; δ = 1.0
square waveform; δ = 0.5;
V
IO(AV)
average output current
A
T
mb ≤ 119 °C; both diodes conducting
tp = 25 µs; square waveform; δ = 0.5;
mb ≤ 119 °C; per diode
IFRM
IFSM
repetitive peak forward current
-
-
-
10
50
55
A
A
A
T
non-repetitive peak forward
current
t = 10 ms; sinusoidal waveform; per
diode
t = 8.3 ms; sinusoidal waveform; per
diode
IRM
peak reverse recovery current
tp = 2 µs; δ = 0.001
tp = 100 µs
-
-
0.2
0.2
A
A
IRSM
non-repetitive peak reverse
current
Tstg
Tj
storage temperature
junction temperature
−40
+150
150
°C
°C
-
Electrostatic discharge
VESD
electrostatic discharge voltage
all pins; human body model;
-
8
kV
C = 250 pF; R = 1.5 kΩ
BYQ28_SER_E_ED_4
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 5 December 2007
2 of 10
BYQ28 series E and ED
NXP Semiconductors
Rectifier diodes ultrafast, rugged
5. Thermal characteristics
Table 4.
Symbol Parameter
Rth(j-mb) thermal resistance from junction to
mounting base
Thermal characteristics
Conditions
Min
Typ
Max
Unit
with heatsink compound;
per diode; see Figure 1
-
-
4.5
K/W
with heatsink compound;
both diodes conducting
-
-
3
K/W
Rth(j-a)
thermal resistance from junction to ambient in free air; SOT78
SOT428
-
-
60
50
-
-
K/W
K/W
[1]
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
001aag979
10
Z
th(j-mb)
(K/W)
1
−1
−2
−3
10
10
10
t
p
P
δ =
T
t
t
p
T
t
−6
−5
−4
−3
−2
−1
10
10
10
10
10
10
1
10
(s)
p
Fig 1. Transient thermal impedance from junction to mounting base as a function of pulse width
BYQ28_SER_E_ED_4
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 5 December 2007
3 of 10
BYQ28 series E and ED
NXP Semiconductors
Rectifier diodes ultrafast, rugged
6. Characteristics
Table 5.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Static characteristics
VF forward voltage
Conditions
Min
Typ
Max
Unit
IF = 5 A; Tj = 150 °C; see Figure 2
IF = 5 A; see Figure 2
IF = 10 A; see Figure 2
VR = 200 V
-
-
-
-
-
0.8
0.95
1.1
2
0.895
1.1
V
V
1.25
10
V
IR
reverse current
µA
mA
VR = 200 V; Tj = 100 °C
0.1
0.2
Dynamic characteristics
Qr
recovered charge
IF = 2 A to VR ≥ 30 V; dIF/dt = 20 A/µs;
see Figure 3
-
-
-
4
9
nC
ns
ns
trr
reverse recovery time
ramp recovery; IF = 1 A to VR ≥ 30 V;
dIF/dt = 100 A/µs; see Figure 3
15
10
25
20
step recovery; when switched from
IF = 0.5 A to IR = 1 A; measured at
IR = 0.25 A
IRM
peak reverse recovery IF = 5 A to VR ≥ 30 V; dIF/dt = 50 A/µs;
-
-
0.5
1
0.7
-
A
V
current
see Figure 3
VFR
forward recovery
voltage
IF = 1 A; dIF/dt = 10 A/µs; see Figure 4
001aag978
15
I
F
(A)
10
(1)
(2)
(3)
5
0
0
0.5
1.0
1.5
V
(V)
F
(1) Tj = 150 °C; typical values
(2) Tj = 150 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig 2. Forward current as a function of forward voltage
BYQ28_SER_E_ED_4
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 5 December 2007
4 of 10
BYQ28 series E and ED
NXP Semiconductors
Rectifier diodes ultrafast, rugged
I
F
dl
F
I
F
dt
t
rr
time
time
10 %
V
F
V
FR
100 %
Q
r
V
F
I
I
RM
R
time
001aab911
001aab912
Fig 3. Reverse recovery definitions
Fig 4. Forward recovery definitions
001aag976
001aag977
8
6
P
(W)
tot
δ = 1
P
(W)
tot
a = 1.57
6
4
2
0
1.9
0.5
4
2
0
2.2
2.8
0.2
4.0
0.1
0
2
4
6
8
0
2
4
6
I
(A)
I
(A)
F(AV)
F(AV)
IF(AV) = IF(RMS) × √δ
a = form factor = IF(RMS) / IF(AV)
Fig 5. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 6. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
BYQ28_SER_E_ED_4
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 5 December 2007
5 of 10
BYQ28 series E and ED
NXP Semiconductors
Rectifier diodes ultrafast, rugged
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
p
A
A
1
q
mounting
base
D
1
D
L
L
2
1
Q
b
1
L
1
2
3
b
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
b
L
max.
2
e
A
b
D
E
L
D
L
1
A
c
UNIT
p
q
Q
1
1
1
4.7
4.1
1.40
1.25
0.9
0.6
1.45
1.00
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
15.0
12.8
3.30
2.79
3.8
3.5
3.0
2.7
2.6
2.2
mm
3.0
2.54
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
05-03-22
05-10-25
SOT78
3-lead TO-220AB
SC-46
Fig 7. Package outline SOT78 (TO-220AB)
BYQ28_SER_E_ED_4
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 5 December 2007
6 of 10
BYQ28 series E and ED
NXP Semiconductors
Rectifier diodes ultrafast, rugged
Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped)
SOT428
y
E
A
A
A
b
2
E
1
1
mounting
base
D
2
D
1
H
D
2
L
L
2
L
1
1
3
b
1
b
M
c
w
A
e
e
1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
y
max
D
min
E
min
L
1
min
2
1
UNIT
A
A
1
b
b
b
c
D
E
e
e
1
H
D
L
L
2
w
1
2
1
2.38
2.22
0.93
0.46
0.89
0.71
1.1
0.9
5.46
5.00
0.56
0.20
6.22
5.98
6.73
6.47
10.4
9.6
2.95
2.55
0.9
0.5
4.0
4.45
0.5
mm
2.285 4.57
0.2
0.2
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
06-02-14
06-03-16
SOT428
SC-63
TO-252
Fig 8. Package outline SOT428 (TO-252)
BYQ28_SER_E_ED_4
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 5 December 2007
7 of 10
BYQ28 series E and ED
NXP Semiconductors
Rectifier diodes ultrafast, rugged
8. Revision history
Table 6.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BYQ28_SER_E_ED_4
Modifications:
20071205
Product data sheet
-
BYQ28E_SERIES_3
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Limiting values table: some parameter descriptions amended to conform to latest
standards; IFRM conditions amended; VESD row added.
• Characteristics: Qrr changed to Qr ‘recovered charge’; trr1 and trr2 changed to trr with
‘ramp recovery’ and ‘step recovery’ added to conditions.
BYQ28E_SERIES_3
BYQ28E_SERIES_2
19981001
19980701
Product specification
Product specification
-
-
BYQ28E_SERIES_2
BYQ28E_SERIES_1;
BYQ28EB_SERIES_1
BYQ28E_SERIES_1;
BYQ28EB_SERIES_1
19960801
Product specification
-
-
BYQ28_SER_E_ED_4
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 5 December 2007
8 of 10
BYQ28 series E and ED
NXP Semiconductors
Rectifier diodes ultrafast, rugged
9. Legal information
9.1
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
9.2
Definitions
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
9.3
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
9.4
Trademarks
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
10. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
BYQ28_SER_E_ED_4
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 5 December 2007
9 of 10
BYQ28 series E and ED
NXP Semiconductors
Rectifier diodes ultrafast, rugged
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
9.1
9.2
9.3
9.4
10
11
Contact information. . . . . . . . . . . . . . . . . . . . . . 9
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 5 December 2007
Document identifier: BYQ28_SER_E_ED_4
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