BYV1100 [NXP]
Fast soft-recovery rectifier; 快速软恢复整流器型号: | BYV1100 |
厂家: | NXP |
描述: | Fast soft-recovery rectifier |
文件: | 总12页 (文件大小:68K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
BYV1100
Fast soft-recovery rectifier
1998 Dec 03
Product specification
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
BYV1100
and fatigue free as coefficients of
expansion of all used parts are
matched.
FEATURES
DESCRIPTION
• Glass passivated
Cavity free cylindrical glass package
through Implotec (1) technology.
This package is hermetically sealed
• High maximum operating
temperature
(1) Implotec is a trademark of Philips.
• Low leakage current
• Excellent stability
• Available in ammo-pack.
k
a
handbook, 4 columns
MAM123
Fig.1 Simplified outline (SOD81) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
repetitive peak reverse voltage
continuous reverse voltage
average forward current
CONDITIONS
MIN.
MAX.
100
100
1.7
UNIT
VRRM
VR
−
−
−
V
V
A
IF(AV)
Ttp = 55 °C; lead length = 10 mm;
averaged over any 20 ms period;
see Figs.2 and 4
Tamb = 60 °C; printed-circuit board
−
1.0
A
mounting, see Fig.12;
averaged over any 20 ms period;
see Figs.3 and 4
IFRM
repetitive peak forward current
Ttp = 55 °C; see Fig.6
−
−
−
15
9.5
15
A
A
A
Tamb = 60 °C; see Fig.7
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj = Tj max prior to surge;
VR = VRRMmax
Tstg
Tj
storage temperature
junction temperature
−65
−65
+175 °C
+175 °C
1998 Dec 03
2
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
BYV1100
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MIN.
TYP.
MAX.
0.735 V
UNIT
VF
IF = 1 A; Tj = Tj max; see Fig.5
IF = 1 A; see Fig.5
IR = 0.1 mA
−
−
−
−
−
0.96
V
V
V(BR)R
IR
reverse avalanche
breakdown voltage
120
−
reverse current
VR = VRRMmax; see Fig.8
−
−
−
−
5
µA
VR = VRRMmax; Tj = 165 °C;
150 µA
see Fig.8
trr
reverse recovery time
diode capacitance
when switched from IF = 0.5 A
to IR = 1 A; measured at
IR = 0.25 A; see Fig.10
−
−
10 ns
Cd
f = 1 MHz; VR = 0; see Fig.9
−
−
70
−
pF
when switched from
IF = 1 A to VR ≥ 30 V and
dIF/dt = −1 A/µs; see Fig.11
−
2
A/µs
maximum slope of reverse
recovery current
dIR
--------
dt
THERMAL CHARACTERISTICS
SYMBOL
Rth j-tp
PARAMETER
CONDITIONS
lead length = 10 mm
note 1
VALUE
UNIT
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
60
K/W
K/W
Rth j-a
120
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.12.
For more information please refer to the “General Part of associated Handbook”.
1998 Dec 03
3
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
BYV1100
GRAPHICAL DATA
MGR564
MGR565
2.0
2.0
handbook, halfpage
handbook, halfpage
I
I
F(AV)
F(AV)
(A)
(A)
1.6
1.6
1.2
0.8
0.4
1.2
0.8
0.4
0
0
0
40
80
120
160
T
200
(°C)
0
40
80
120
160
T
200
(°C)
amb
tp
Switched mode application.
a = 1.42; δ = 0.5; VR = VRRMmax
Device mounted as shown in Fig.12.
.
Switched mode application.
a = 1.42; δ = 0.5; VR = VRRMmax
.
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MBK899
MGR563
2.0
20
handbook, halfpage
handbook, halfpage
a = 3
2.5 2
1.57
1.42
I
P
(W)
F
(A)
1.6
16
1.2
0.8
12
8
0.4
0
4
0
0
0.4
0.8
1.2
1.6
I
2.0
(A)
0
1
2
3
4
V
(V)
F
F(AV)
a = IF(RMS)/IF(AV); δ = 0.5; VR = VRRMmax
.
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
Fig.4 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
Fig.5 Maximum forward voltage as a function of
forward current.
1998 Dec 03
4
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
BYV1100
MGR569
20
I
FRM
(A)
16
δ = 0.05
12
0.1
8
0.2
0.5
1
4
0
10
−2
−1
2
3
4
10
1
10
10
10
10
t
(ms)
p
Ttp = 55 °C; Rth j-tp = 60 K/W; VR = VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 100 V.
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MGR568
10
δ = 0.05
I
FRM
(A)
8
6
4
2
0.1
0.2
0.5
1
0
10
−2
−1
2
3
4
10
1
10
10
10
10
t
(ms)
p
Tamb = 60 °C; Rth j-a = 120 K/W; VR = VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 100 V.
Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1998 Dec 03
5
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
BYV1100
MBK900
MGC550
3
3
10
10
handbook, halfpage
handbook, halfpage
I
C
d
(pF)
R
(µA)
2
2
10
10
10
10
1
1
1
2
10
10
0
100
200
V
(V)
R
T (°C)
j
VR = VRRMmax
.
f = 1 MHz; Tj = 25 °C.
Fig.8 Reverse current as a function of junction
temperature; maximum values.
Fig.9 Diode capacitance as a function of reverse
voltage; typical values.
I
F
(A)
DUT
0.5
t
rr
0
0.25
0.5
t
0.5 A
50 Ω
I
R
(A)
MAM282
1.0
Rise time oscilloscope: tr ≤ 2 ns.
Turn-on time switch: t ≤ 3 ns.
Fig.10 Test circuit and reverse recovery time waveform and definition.
6
1998 Dec 03
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
BYV1100
50
25
handbook, halfpage
I
andbook, halfpage
F
dI
F
dt
7
50
t
rr
t
10%
dI
R
dt
100%
2
I
R
MGC499
3
MGA200
Dimensions in mm.
Fig.11 Reverse recovery definitions.
Fig.12 Device mounted on a printed-circuit board.
1998 Dec 03
7
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
BYV1100
PACKAGE OUTLINE
Hermetically sealed glass package;
ImplotecTM(1) technology; axial leaded; 2 leads
SOD81
G
1
(2)
k
a
b
D
L
L
G
DIMENSIONS (mm are the original dimensions)
G
D
max.
G
max.
L
min.
b
max.
1
UNIT
0
1
2 mm
max.
scale
mm
0.81
2.15
3.8
5
28
Notes
1. Implotec is a trademark of Philips.
2. The marking band indicates the cathode.
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-06-20
SOD81
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Dec 03
8
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
BYV1100
NOTES
1998 Dec 03
9
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
BYV1100
NOTES
1998 Dec 03
10
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
BYV1100
NOTES
1998 Dec 03
11
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© Philips Electronics N.V. 1998
SCA60
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Printed in The Netherlands
135106/00/01/pp12
Date of release: 1998 Dec 03
Document order number: 9397 750 04805
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