BYV26F [NXP]
Fast soft-recovery controlled avalanche rectifiers; 快速软恢复控制雪崩整流器
| 型号： | BYV26F |
| 厂家： | 
NXP |
| 描述： | Fast soft-recovery controlled avalanche rectifiers |
| 文件： | 总12页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BYV26 series
Fast soft-recovery
controlled avalanche rectifiers
1996 May 30
Product specification
Supersedes data of February 1994
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV26 series
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
FEATURES
DESCRIPTION
• Glass passivated
Rugged glass SOD57 package, using
a high temperature alloyed
construction.
• High maximum operating
temperature
• Low leakage current
• Excellent stability
k
a
• Guaranteed avalanche energy
absorption capability
MAM047
• Available in ammo-pack.
Fig.1 Simplified outline (SOD57) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYV26A
−
−
−
−
−
−
−
200
400
V
V
V
V
V
V
V
BYV26B
BYV26C
600
BYV26D
800
BYV26E
1000
1200
1400
BYV26F
BYV26G
VR
continuous reverse voltage
BYV26A
−
−
−
−
−
−
−
200
400
V
V
V
V
V
V
V
BYV26B
BYV26C
600
BYV26D
800
BYV26E
1000
1200
1400
BYV26F
BYV26G
IF(AV)
IF(AV)
IFRM
average forward current
BYV26A to E
BYV26F and G
Ttp = 85 °C; lead length = 10 mm;
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
−
−
1.00
1.05
A
A
average forward current
BYV26A to E
Tamb = 60 °C; PCB mounting (see
Fig.19); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
−
−
0.65
0.68
A
A
BYV26F and G
repetitive peak forward current
BYV26A to E
Ttp = 85 °C; see Figs 6 and 7
−
−
10.0
9.6
A
A
BYV26F and G
1996 May 30
2
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV26 series
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IFRM
repetitive peak forward current
BYV26A to E
Tamb = 60 °C; see Figs 8 and 9
−
−
−
6.0
6.4
30
A
A
A
BYV26F and G
IFSM
non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max
prior to surge; VR = VRRMmax
ERSM
non-repetitive peak reverse
avalanche energy
IR = 400 mA; Tj = Tj max prior to
surge; inductive load switched off
−
10 mJ
Tstg
Tj
storage temperature
junction temperature
−65
−65
+175 °C
+175 °C
see Figs 12 and 13
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
IF = 1 A; Tj = Tj max
MIN.
TYP.
MAX.
UNIT
VF
;
see Figs 14 and 15
BYV26A to E
BYV26F and G
forward voltage
BYV26A to E
−
−
−
−
1.3
1.3
V
V
VF
IF = 1 A;
see Figs 14 and 15
−
−
−
−
2.50
2.15
V
V
BYV26F and G
V(BR)R
reverse avalanche breakdown
voltage
IR = 0.1 mA
BYV26A
BYV26B
300
500
700
900
1100
1300
1500
−
−
−
−
−
−
−
−
−
−
−
−
V
V
BYV26C
−
V
BYV26D
−
V
BYV26E
−
V
BYV26F
−
V
BYV26G
−
V
IR
reverse current
VR = VRRMmax; see Fig.16
5
µA
µA
VR = VRRMmax
;
−
150
Tj = 165 °C; see Fig.16
trr
reverse recovery time
BYV26A to C
when switched from
IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A;
see Fig.20
−
−
−
−
−
−
30
75
ns
ns
ns
BYV26D and E
BYV26F and G
diode capacitance
BYV26A to C
150
Cd
f = 1 MHz; VR = 0 V;
see Figs 17 and 18
−
−
−
45
40
35
−
−
−
pF
pF
pF
BYV26D and E
BYV26F and G
1996 May 30
3
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV26 series
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
when switched from
IF = 1 A to VR ≥ 30 V and
dIF/dt = −1 A/µs;
maximum slope of reverse recovery
current
dIR
--------
dt
BYV26A to C
BYV26D and E
BYV26F and G
−
−
−
−
−
−
7
6
5
A/µs
see Fig.21
A/µs
A/µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
46
K/W
K/W
100
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.19.
For more information please refer to the “General Part of associated Handbook”.
1996 May 30
4
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV26 series
GRAPHICAL DATA
MSA855
MLB533
1
2
handbook, halfpage
handbook, halfpage
20 15 10 lead length (mm)
I
I
F(AV)
F(AV)
(A)
(A)
lead length 10 mm
0.5
1
0
0
0
o
o
0
100
200
100
200
T
( C)
T
( C)
tp
tp
BYV26A to E
BYV26F and G
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
Fig.2 Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
Fig.3 Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
MSA856
MLB534
1
1
handbook, halfpage
handbook, halfpage
I
I
F(AV)
F(AV)
(A)
(A)
0.5
0.5
0
0
o
o
0
100
200
0
100
200
T
( C)
T
( C)
amb
amb
BYV26A to E
BYV26F and G
a = 1.42; VR = VRRMmax; δ = 0.5.
a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig.19.
Switched mode application.
Device mounted as shown in Fig.19.
Switched mode application.
Fig.4 Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
Fig.5 Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
1996 May 30
5
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV26 series
MSA860
12
I
FRM
(A)
10
= 0.05
δ
8
6
0.1
4
2
0.2
0.5
1
0
10
2
1
2
3
4
10
1
10
10
10
10
t
(ms)
p
BYV26A to E.
Ttp = 85°C; Rth j-tp = 46 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V.
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MLB535
10
I
FRM
(A)
= 0.05
δ
8
0.1
6
0.2
4
2
0.5
1
0
10
2
1
2
3
4
10
1
10
10
10
10
t
(ms)
p
BYV26F and G.
Ttp = 85°C; Rth j-tp = 46 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V.
Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 May 30
6
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV26 series
MSA859
6
I
FRM
(A)
δ = 0.05
5
4
3
0.1
0.2
2
1
0.5
1
0
10
2
1
2
3
4
10
1
10
10
10
10
t
(ms)
p
BYV26A to E
Tamb = 60 °C; Rth j-a = 100 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V.
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MLB536
8
I
FRM
(A)
6
= 0.05
δ
0.1
4
2
0.2
0.5
1
0
10
2
1
2
3
4
10
1
10
10
10
10
t
(ms)
p
BYV26F and G
Tamb = 60 °C; Rth j-a = 100 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V.
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 May 30
7
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV26 series
MSA854
MLB532
3
3
P
P
(W)
(W)
a = 3 2.5
2
1.57
1.42
a = 3 2.5
2
2
2
1.57
1.42
1
1
0
0
0
0.5
1
0
0.5
1
I
(A)
I
(A)
F(AV)
F(AV)
BYV26A to E
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
BYV26F and G
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Fig.10 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
Fig.11 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
MSA857
MLB599
200
200
handbook, halfpage
handbook, halfpage
T
j
T
j
o
o
( C)
( C)
100
100
A
B
C
D
E
F
G
0
0
0
400
800
1200
0
1000
2000
V
(V)
V
(V)
R
R
BYV26A to E
BYV26F and G
Solid line = VR.
Solid line = VR.
Dotted line = VRRM; δ = 0.5.
Dotted line = VRRM; δ = 0.5.
Fig.12 Maximum permissible junction temperature
as a function of reverse voltage.
Fig.13 Maximum permissible junction temperature
as a function of reverse voltage.
1996 May 30
8
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV26 series
MSA853
MBD427
8
8
handbook, halfpage
handbook, halfpage
I
I
F
F
(A)
(A)
6
6
4
2
0
4
2
0
0
0
2
4
6
8
2
4
6
V
(V)
V (V)
F
F
BYV26A to E
BYV26F and G
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
Fig.14 Forward current as a function of forward
voltage; maximum values.
Fig.15 Forward current as a function of forward
voltage; maximum values.
MGC550
MSA858
3
10
2
10
handbook, halfpage
handbook, halfpage
I
R
(µA)
C
d
(pF)
2
10
BYV26A,B,C
BYV26D,E
10
10
1
1
3
2
1
10
10
10
V
(V)
0
100
200
T (°C)
R
j
BYV26A to E
f = 1 MHz; Tj = 25 °C.
VR = VRRMmax
.
Fig.16 Reverse current as a function of junction
temperature; maximum values.
Fig.17 Diode capacitance as a function of reverse
voltage, typical values.
1996 May 30
9
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV26 series
MBD437
2
10
50
25
handbook, halfpage
handbook, halfpage
C
d
(pF)
7
50
10
2
3
1
2
3
4
1
10
10
10
10
MGA200
V
(V)
R
BYV26F and G
f = 1 MHz; Tj = 25 °C.
Dimensions in mm.
Fig.18 Diode capacitance as a function of reverse
voltage, typical values.
Fig.19 Device mounted on a printed-circuit board.
DUT
I
F
(A)
+
0.5
t
rr
25 V
10 Ω
1 Ω
50 Ω
0
0.25
0.5
t
I
R
(A)
MAM057
1
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.20 Test circuit and reverse recovery time waveform and definition.
10
1996 May 30
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV26 series
I
ndbook, halfpage
F
dI
F
dt
t
rr
t
10%
dI
R
dt
100%
I
R
MGC499
Fig.21 Reverse recovery definitions.
1996 May 30
11
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV26 series
PACKAGE OUTLINE
k
a
0.81
max
3.81
max
4.57
max
MBC880
28 min
28 min
Dimensions in mm.
The marking band indicates the cathode.
Fig.22 SOD57.
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 May 30
12
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