BYV28-100 [NXP]

Ultra fast low-loss controlled avalanche rectifiers; 超快速控制低损耗雪崩整流器
BYV28-100
型号: BYV28-100
厂家: NXP    NXP
描述:

Ultra fast low-loss controlled avalanche rectifiers
超快速控制低损耗雪崩整流器

整流二极管
文件: 总16页 (文件大小:103K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
BYV28 series  
Ultra fast low-loss  
controlled avalanche rectifiers  
1997 Nov 24  
Product specification  
Supersedes data of 1996 Oct 02  
Philips Semiconductors  
Product specification  
Ultra fast low-loss  
controlled avalanche rectifiers  
BYV28 series  
This package is hermetically sealed  
and fatigue free as coefficients of  
expansion of all used parts are  
matched.  
FEATURES  
DESCRIPTION  
Glass passivated  
Rugged glass SOD64 package, using  
a high temperature alloyed  
construction.  
High maximum operating  
temperature  
Low leakage current  
Excellent stability  
k
a
Guaranteed avalanche energy  
absorption capability  
MAM104  
Available in ammo-pack  
Also available with preformed leads  
for easy insertion.  
Fig.1 Simplified outline (SOD64) and symbol.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VRRM  
repetitive peak reverse voltage  
BYV28-50  
50  
100  
150  
200  
300  
400  
500  
600  
V
V
V
V
V
V
V
V
BYV28-100  
BYV28-150  
BYV28-200  
BYV28-300  
BYV28-400  
BYV28-500  
BYV28-600  
VR  
continuous reverse voltage  
BYV28-50  
50  
100  
150  
200  
300  
400  
500  
600  
V
V
V
V
V
V
V
V
BYV28-100  
BYV28-150  
BYV28-200  
BYV28-300  
BYV28-400  
BYV28-500  
BYV28-600  
IF(AV)  
average forward current  
BYV28-50 to 400  
BYV28-500 and 600  
Ttp = 85 °C; lead length = 10 mm;  
see Figs 2 and 3;  
averaged over any 20 ms period;  
see also Figs 10 and 11  
3.5  
3.1  
A
A
IF(AV)  
average forward current  
BYV28-50 to 400  
Tamb = 60 °C; printed-circuit board  
mounting (see Fig.20);  
see Figs 4 and 5;  
averaged over any 20 ms period;  
see also Figs 10 and 11  
1.9  
1.5  
A
A
BYV28-500 and 600  
1997 Nov 24  
2
Philips Semiconductors  
Product specification  
Ultra fast low-loss  
controlled avalanche rectifiers  
BYV28 series  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
IFRM  
repetitive peak forward current  
BYV28-50 to 400  
Ttp = 85 °C; see Figs 6 and 7  
32  
31  
A
A
BYV28-500 and 600  
IFRM  
repetitive peak forward current  
BYV28-50 to 400  
Tamb = 60 °C; see Figs 8 and 9  
17  
16  
90  
A
A
A
BYV28-500 and 600  
IFSM  
non-repetitive peak forward current  
t = 10 ms half sine wave;  
Tj = Tj max prior to surge;  
VR = VRRMmax  
ERSM  
non-repetitive peak reverse  
avalanche energy  
L = 120 mH; Tj = Tj max prior to  
surge; inductive load switched off  
20 mJ  
Tstg  
Tj  
storage temperature  
junction temperature  
65  
65  
+175 °C  
+175 °C  
see Fig.12  
ELECTRICAL CHARACTERISTICS  
Tj = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
forward voltage  
CONDITIONS  
IF = 3.5 A; Tj = Tj max  
MIN.  
TYP.  
MAX.  
UNIT  
VF  
;
see Figs 13, 14 and 15  
BYV28-50 to 200  
BYV28-300 and 400  
BYV28-500 and 600  
forward voltage  
0.80  
0.83  
0.98  
V
V
V
VF  
IF = 3.5 A;  
see Figs 13, 14 and 15  
BYV28-50 to 200  
1.02  
1.05  
1.25  
V
V
V
BYV28-300 and 400  
BYV28-500 and 600  
V(BR)R  
reverse avalanche breakdown  
voltage  
IR = 0.1 mA  
BYV28-50  
BYV28-100  
BYV28-150  
BYV28-200  
BYV28-300  
BYV28-400  
BYV28-500  
BYV28-600  
reverse current  
55  
110  
165  
220  
330  
440  
560  
675  
V
V
V
V
V
V
V
V
IR  
VR = VRRMmax; see Fig.16  
5
µA  
µA  
VR = VRRMmax; Tj = 165 °C;  
150  
see Fig.16  
trr  
reverse recovery time  
BYV28-50 to 200  
when switched from  
IF = 0.5 A to IR = 1 A;  
measured at IR = 0.25 A;  
see Fig.22  
25  
50  
ns  
ns  
BYV28-300 to 600  
1997 Nov 24  
3
Philips Semiconductors  
Product specification  
Ultra fast low-loss  
controlled avalanche rectifiers  
BYV28 series  
SYMBOL  
PARAMETER  
diode capacitance  
CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
Cd  
f = 1 MHz; VR = 0;  
see Figs 17, 18 and 19  
BYV28-50 to 200  
190  
150  
125  
4
pF  
BYV28-300 and 400  
BYV28-500 and 600  
pF  
pF  
when switched from  
IF = 1 A to VR 30 V and  
dIF/dt = 1 A/µs; see Fig.21  
A/µs  
maximum slope of reverse  
recovery current  
dIR  
--------  
dt  
THERMAL CHARACTERISTICS  
SYMBOL  
Rth j-tp  
PARAMETER  
CONDITIONS  
lead length = 10 mm  
note 1  
VALUE  
UNIT  
thermal resistance from junction to tie-point  
thermal resistance from junction to ambient  
25  
75  
K/W  
K/W  
Rth j-a  
Note  
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 µm, see Fig.20  
For more information please refer to the “General Part of associated Handbook”.  
1997 Nov 24  
4
Philips Semiconductors  
Product specification  
Ultra fast low-loss  
controlled avalanche rectifiers  
BYV28 series  
GRAPHICAL DATA  
MGK640  
MGA868  
4
5
handbook, halfpage  
handbook, halfpage  
I
F(AV)  
I
F(AV)  
(A)  
(A)  
20  
15  
10 lead length (mm)  
4
3
lead length 10 mm  
3
2
2
1
0
1
0
0
0
100  
200  
100  
200  
o
T
(°C)  
tp  
T
( C)  
tp  
BYV28-50 to 400  
BYV28-500 and 600  
a = 1.42; VR = VRRMmax; δ = 0.5.  
a = 1.42; VR = VRRMmax; δ = 0.5.  
Switched mode application.  
Switched mode application.  
Fig.3 Maximum permissible average forward  
current as a function of tie-point temperature  
(including losses due to reverse leakage).  
Fig.2 Maximum permissible average forward  
current as a function of tie-point temperature  
(including losses due to reverse leakage).  
MLC206  
MGK641  
3
2.0  
handbook, halfpage  
handbook, halfpage  
I
F(AV)  
I
(A)  
F(AV)  
1.6  
(A)  
2
1.2  
0.8  
1
0
0.4  
0
0
100  
200  
o
0
100  
200  
T
( C)  
T
(°C)  
amb  
amb  
BYV28-50 to 400  
BYV28-500 and 600  
a = 1.42; VR = VRRMmax; δ = 0.5; switched mode application.  
a = 1.42; VR = VRRMmax; δ = 0.5; switched mode application.  
Device mounted as shown in Fig.20.  
Device mounted as shown in Fig.20.  
Fig.4 Maximum permissible average forward  
current as a function of ambient temperature  
(including losses due to reverse leakage).  
Fig.5 Maximum permissible average forward  
current as a function of ambient temperature  
(including losses due to reverse leakage).  
1997 Nov 24  
5
Philips Semiconductors  
Product specification  
Ultra fast low-loss  
controlled avalanche rectifiers  
BYV28 series  
MLC212  
40  
I
FRM  
(A)  
30  
20  
10  
0
δ = 0.05  
0.1  
0.2  
0.5  
1
2
1
2
3
4
10  
10  
1
10  
10  
10  
10  
t
(ms)  
p
BYV28-50 to 400  
tp = 85°C; Rth j-tp = 25 K/W.  
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V.  
T
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.  
MGK642  
40  
I
FRM  
(A)  
30  
20  
10  
0
δ = 0.05  
0.1  
0.2  
0.5  
1
2  
1  
2
3
4
10  
10  
1
10  
10  
10  
10  
t
(ms)  
p
BYV28-500 and 600  
tp = 85°C; Rth j-tp = 25 K/W.  
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 600 V.  
T
Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.  
1997 Nov 24  
6
Philips Semiconductors  
Product specification  
Ultra fast low-loss  
controlled avalanche rectifiers  
BYV28 series  
MLC213  
20  
I
FRM  
(A)  
δ = 0.05  
16  
12  
0.1  
8
0.2  
0.5  
4
1
0
10  
2
1
2
3
4
10  
1
10  
10  
10  
10  
t
(ms)  
p
BYV28-50 to 400  
Tamb = 60 °C; Rth j-a = 75 K/W.  
RRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V.  
V
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.  
MGK643  
20  
I
FRM  
(A)  
16  
δ = 0.05  
12  
8
0.1  
0.2  
4
0.5  
1
0
10  
2  
1  
2
3
4
10  
1
10  
10  
10  
10  
t
(ms)  
p
BYV28-500 and 600  
Tamb = 60 °C; Rth j-a = 75 K/W.  
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 600 V.  
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.  
1997 Nov 24  
7
Philips Semiconductors  
Product specification  
Ultra fast low-loss  
controlled avalanche rectifiers  
BYV28 series  
MGK644  
MGA871  
5
4.8  
handbook, halfpage  
2.5  
2
handbook, halfpage  
a = 3  
P
P
(W)  
(W)  
1.57  
1.42  
a = 3 2.5  
2
1.57  
1.42  
4.0  
3.2  
2.4  
1.6  
0.8  
0
4
3
2
1
0
0
1
2
3
4
0
2
4
I
(A)  
F(AV)  
I
(A)  
F(AV)  
BYV28-50 to 400  
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.  
BYV28-500 and 600  
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.  
Fig.10 Maximum steady state power dissipation  
(forward plus leakage current losses,  
excluding switching losses) as a function  
of average forward current.  
Fig.11 Maximum steady state power dissipation  
(forward plus leakage current losses,  
excluding switching losses) as a function  
of average forward current.  
MGK645  
MGA865  
200  
10  
handbook, halfpage  
handbook, halfpage  
I
F
T
(A)  
j
(°C)  
8
6
4
2
0
100  
0
0
1
2
0
50  
100  
V
(V)  
V
(%V  
)
Rmax  
F
R
Solid line = VR.  
BYV28-50 to 200  
Dotted line = VRRM; δ = 0.5.  
Dotted line: Tj = 175 °C.  
Solid line: Tj = 25 °C.  
Fig.12 Maximum permissible junction  
temperature as a function of maximum  
reverse voltage percentage.  
Fig.13 Forward current as a function of forward  
voltage; maximum values.  
1997 Nov 24  
8
Philips Semiconductors  
Product specification  
Ultra fast low-loss  
controlled avalanche rectifiers  
BYV28 series  
MGC521  
MGK646  
10  
10  
handbook, halfpage  
handbook, halfpage  
I
I
F
(A)  
8
F
(A)  
8
6
6
4
2
4
2
0
0
0
0
1
2
1
2
V
(V)  
V
(V)  
F
F
BYV28-300 and 400  
Dotted line: Tj = 175 °C.  
Solid line: Tj = 25 °C.  
BYV28-500 and 600  
Dotted line: Tj = 175 °C.  
Solid line: Tj = 25 °C.  
Fig.14 Forward current as a function of forward  
voltage; maximum values.  
Fig.15 Forward current as a function of forward  
voltage; maximum values.  
MGC550  
MGA856  
3
3
10  
10  
handbook, halfpage  
handbook, halfpage  
I
R
(µA)  
C
d
(pF)  
2
10  
2
10  
10  
1
10  
2
3
0
100  
200  
1
10  
10  
10  
T (°C)  
V
(V)  
j
R
BYV28-50 to 200  
f = 1 MHz; Tj = 25 °C.  
VR = VRRMmax  
.
Fig.16 Reverse current as a function of junction  
temperature; maximum values.  
Fig.17 Diode capacitance as a function of reverse  
voltage; typical values.  
1997 Nov 24  
9
Philips Semiconductors  
Product specification  
Ultra fast low-loss  
controlled avalanche rectifiers  
BYV28 series  
MGC520 - 1  
MGK647  
2
10  
2
10  
handbook, halfpage  
handbook, halfpage  
C
d
(pF)  
C
d
(pF)  
10  
1
1
10  
2
2
3
3
10  
10  
10  
1
10  
10  
10  
V
(V)  
R
V
(V)  
R
BYV28-300 and 400  
BYV28-500 and 600  
f = 1 MHz; Tj = 25 °C.  
f = 1 MHz; Tj = 25 °C.  
Fig.18 Diode capacitance as a function of reverse  
voltage; typical values.  
Fig.19 Diode capacitance as a function of reverse  
voltage; typical values.  
50  
handbook, halfpage  
I
25  
ndbook, halfpage  
F
dI  
F
dt  
7
t
rr  
50  
t
10%  
dI  
R
dt  
100%  
2
I
R
MGC499  
3
MGA200  
Dimensions in mm.  
Fig.20 Device mounted on a printed-circuit board.  
Fig.21 Reverse recovery definitions.  
1997 Nov 24  
10  
Philips Semiconductors  
Product specification  
Ultra fast low-loss  
controlled avalanche rectifiers  
BYV28 series  
I
F
DUT  
(A)  
+
0.5  
t
rr  
25 V  
10 Ω  
1 Ω  
50 Ω  
0
0.25  
0.5  
t
I
R
(A)  
MAM057  
1.0  
Input impedance oscilloscope: 1 M, 22 pF; tr 7 ns.  
Source impedance: 50 ; tr 15 ns.  
Fig.22 Test circuit and reverse recovery time waveform and definition.  
1997 Nov 24  
11  
Philips Semiconductors  
Product specification  
Ultra fast low-loss  
controlled avalanche rectifiers  
BYV28 series  
PACKAGE OUTLINE  
Hermetically sealed glass package; axial leaded; 2 leads  
SOD64  
(1)  
k
a
b
G
D
L
L
DIMENSIONS (mm are the original dimensions)  
0
2.5  
5 mm  
D
G
L
b
UNIT  
max.  
max.  
min.  
max.  
scale  
mm  
1.35  
4.5  
5.0  
28  
Note  
1. The marking band indicates the cathode.  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
EIAJ  
97-10-14  
SOD64  
DEFINITIONS  
Data Sheet Status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1997 Nov 24  
12  
Philips Semiconductors  
Product specification  
Ultra fast low-loss  
controlled avalanche rectifiers  
BYV28 series  
NOTES  
1997 Nov 24  
13  
Philips Semiconductors  
Product specification  
Ultra fast low-loss  
controlled avalanche rectifiers  
BYV28 series  
NOTES  
1997 Nov 24  
14  
Philips Semiconductors  
Product specification  
Ultra fast low-loss  
controlled avalanche rectifiers  
BYV28 series  
NOTES  
1997 Nov 24  
15  
Philips Semiconductors – a worldwide company  
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20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557  
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,  
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421  
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,  
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077  
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,  
Tel. +1 800 234 7381  
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,  
Tel. +82 2 709 1412, Fax. +82 2 709 1415  
Uruguay: see South America  
Vietnam: see Singapore  
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,  
Tel. +60 3 750 5214, Fax. +60 3 757 4880  
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,  
Tel. +381 11 625 344, Fax.+381 11 635 777  
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,  
Tel. +9-5 800 234 7381  
Middle East: see Italy  
For all other countries apply to: Philips Semiconductors,  
Internet: http://www.semiconductors.philips.com  
International Marketing & Sales Communications, Building BE-p,  
P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825  
© Philips Electronics N.V. 1997  
SCA56  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
117027/1200/05/pp16  
Date of release: 1997 Nov 24  
Document order number: 9397 750 02664  

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