BYV32E-150 [NXP]
Rectifier diodes ultrafast, rugged; 整流器呃二极管超快，坚固耐用
| 型号： | BYV32E-150 |
| 厂家： | 
NXP |
| 描述： | Rectifier diodes ultrafast, rugged |
| 文件： | 总7页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV32E, BYV32EB series
FEATURES
SYMBOL
QUICK REFERENCE DATA
VR = 150 V/ 200 V
VF ≤ 0.85 V
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
a1
1
a2
3
IO(AV) = 20 A
IRRM = 0.2 A
k
2
trr ≤ 25 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYV32E series is supplied in the SOT78 conventional leaded package.
The BYV32EB series is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN
DESCRIPTION
anode 1 (a)
cathode (k) 1
tab
tab
1
2
2
3
anode 2 (a)
cathode (k)
1
3
1 2 3
tab
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN.
BYV32E / BYV32EB
MAX.
UNIT
-150
-200
VRRM
Peaqk repetitive reverse
-
150
200
V
voltage
VRWM
VR
Crest working reverse voltage
Continuous reverse voltage
-
-
150
150
200
200
V
V
IO(AV)
IFRM
IFSM
Average rectified output current square wave; δ = 0.5;
(both diodes conducting) mb ≤ 115 ˚C
-
-
20
20
A
A
T
Repetitive peak forward current t = 25 µs; δ = 0.5;
per diode
Non-repetitive peak forward
current per diode
Tmb ≤ 115 ˚C
t = 10 ms
-
-
125
137
A
A
t = 8.3 ms
sinusoidal; with reapplied
VRWM(max)
Repetitive peak reverse current tp = 2 µs; δ = 0.001
IRRM
IRSM
-
-
0.2
0.2
A
A
per diode
Non-repetitive peak reverse
current per diode
tp = 100 µs
Tstg
Tj
Storage temperature
Operating junction temperature
-40
-
150
150
˚C
˚C
1 It is not possible to make connection to pin 2 of the SOT404 package
July 1998
1
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV32E, BYV32EB series
ESD LIMITING VALUE
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VC
Electrostatic discharge
capacitor voltage
Human body model;
C = 250 pF; R = 1.5 kΩ
-
8
kV
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Rth j-a
Thermal resistance junction per diode
to mounting base both diodes
Thermal resistance junction SOT78 package, in free air
to ambient SOT404 and SOT428 packages, pcb
mounted, minimum footprint, FR4 board
-
-
-
-
-
2.4
1.6
-
K/W
K/W
K/W
K/W
-
60
50
-
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VF
Forward voltage
IF = 8 A; Tj = 150˚C
-
-
-
-
-
-
0.72
1.00
0.2
6
0.85
1.15
0.6
V
V
mA
µA
nC
ns
IF = 20 A
IR
Reverse current
VR = VRWM; Tj = 100 ˚C
VR = VRWM
30
Qs
trr1
Reverse recovery charge
Reverse recovery time
IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs
IF = 1 A; VR ≥ 30 V;
8
12.5
25
20
-dIF/dt = 100 A/µs
trr2
Vfr
Reverse recovery time
Forward recovery voltage
IF = 0.5 A to IR = 1 A; Irec = 0.25 A
IF = 1 A; dIF/dt = 10 A/µs
-
-
10
1
20
-
ns
V
July 1998
2
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV32E, BYV32EB series
dI
0.5A
IF
I
F
F
dt
t
0A
rr
time
I
= 0.25A
rec
IR
Q
100%
10%
s
trr2
I
I
R
rrm
I = 1A
R
Fig.1. Definition of trr1, Qs and Irrm
Fig.4. Definition of trr2
Tmb(max) / C
D = 1.0
PF / W
Vo = 0.7 V
I
15
114
F
F
Rs = 0.0183 Ohms
0.5
126
10
5
0.2
time
0.1
V
138
150
t
p
t
p
I
D =
T
V
fr
t
T
V
F
0
0
5
10
15
time
IF(AV) / A
Fig.2. Definition of Vfr
Fig.5. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
IF(AV) =IF(RMS) x √D.
PF / W
Vo = 0.7 V
2.8
Tmb(max) / C
a = 1.57
R
10
8
126
1.9
Rs = 0.0183 Ohms
2.2
130.8
D.U.T.
4
6
135.6
140.4
145.2
150
Voltage Pulse Source
4
Current
shunt
2
to ’scope
0
0
2
4
6
8
10
IF(AV) / A
Fig.3. Circuit schematic for trr2
Fig.6. Maximum forward dissipation PF = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV)
.
July 1998
3
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV32E, BYV32EB series
trr / ns
1000
Qs / nC
100
IF=10A
5A
2A
IF=10A
100
10
1A
10
IF=1A
1.0
1
1
1.0
10
100
10
dIF/dt (A/us)
100
-dIF/dt (A/us)
Fig.7. Maximum trr at Tj = 25 ˚C; per diode
Fig.10. Maximum Qs at Tj = 25 ˚C; per diode
Irrm / A
10
Transient thermal impedance, Zth j-mb (K/W)
10
IF=10A
1
1
IF=1A
0.1
0.1
p
t
p
t
P
0.01
D
D =
T
t
T
0.01
0.001
1us
10us 100us 1ms
10ms 100ms
1s
10s
10
100
1
pulse width, tp (s)
-dIF/dt (A/us)
Fig.8. Maximum Irrm at Tj = 25 ˚C; per diode
Fig.11. Transient thermal impedance; per diode;
Zth j-mb = f(tp).
IF / A
30
Tj=150 C
Tj=25 C
20
10
typ
max
0
0.5
1.5
0
1
VF / V
Fig.9. Typical and maximum forward characteristic
per diode; IF = f(VF); parameter Tj
July 1998
4
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV32E, BYV32EB series
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
1 2 3
max
(2x)
0,9 max (3x)
0,6
2,4
2,54 2,54
Fig.12. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
July 1998
5
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV32E, BYV32EB series
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
4.5 max
1.4 max
10.3 max
11 max
15.4
2.5
0.85 max
(x2)
0.5
2.54 (x2)
Fig.13. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
Fig.14. SOT404 : soldering pattern for surface mounting.
Notes
1. Epoxy meets UL94 V0 at 1/8".
July 1998
6
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV32E, BYV32EB series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
July 1998
7
Rev 1.200
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