BYV36GT/R [NXP]
DIODE SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode;
| 型号： | BYV36GT/R |
| 厂家： | 
NXP |
| 描述： | DIODE SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode |
| 文件： | 总14页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BYV36 series
Fast soft-recovery
controlled avalanche rectifiers
1996 Jul 01
Product specification
Supersedes data of 1996 May 30
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV36 series
construction. This package is
FEATURES
DESCRIPTION
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
• Glass passivated
Rugged glass SOD57 package,
using a high temperature alloyed
• High maximum operating
temperature
• Low leakage current
• Excellent stability
k
a
• Guaranteed avalanche energy
absorption capability
MAM047
• Available in ammo-pack.
Fig.1 Simplified outline (SOD57) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYV36A
−
−
−
−
−
−
−
200
400
V
V
V
V
V
V
V
BYV36B
BYV36C
600
BYV36D
800
BYV36E
1000
1200
1400
BYV36F
BYV36G
VR
continuous reverse voltage
BYV36A
−
−
−
−
−
−
−
200
400
V
V
V
V
V
V
V
BYV36B
BYV36C
600
BYV36D
800
BYV36E
1000
1200
1400
BYV36F
BYV36G
IF(AV)
average forward current
BYV36A to C
BYV36D and E
BYV36F and G
average forward current
BYV36A to C
BYV36D and E
BYV36F and G
Ttp = 60 °C; lead length = 10 mm;
see Figs 2; 3 and 4
averaged over any 20 ms period;
see also Figs 14; 15 and 16
−
−
−
1.6
1.5
1.5
A
A
A
IF(AV)
Tamb = 60 °C; PCB mounting (see
Fig.25); see Figs 5; 6 and 7
averaged over any 20 ms period;
see also Figs 14; 15 and 16
−
−
−
0.87
0.81
0.81
A
A
A
1996 Jul 01
2
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV36 series
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IFRM
repetitive peak forward current
BYV36A to C
Ttp = 60 °C; see Figs 8; 9 and 10
−
−
−
18
17
15
A
A
A
BYV36D and E
BYV36F and G
IFRM
repetitive peak forward current
BYV36A to C
Tamb = 60 °C; see Figs 11; 12 and 13
−
−
−
−
9
8
A
A
A
A
BYV36D and E
BYV36F and G
8
IFSM
non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max
prior to surge; VR = VRRMmax
30
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj = Tj max prior to surge;
inductive load switched off
−
10 mJ
Tstg
Tj
storage temperature
junction temperature
−65
−65
+175 °C
+175 °C
see Figs 17 and 18
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
IF = 1 A; Tj = Tj max
MIN.
TYP.
MAX.
UNIT
VF
;
see Figs 19; 20 and 21
BYV36A to C
BYV36D and E
BYV36F and G
forward voltage
BYV36A to C
−
−
−
−
−
−
1.00
1.05
1.05
V
V
V
VF
IF = 1 A;
see Figs 19; 20 and 21
−
−
−
−
−
−
1.35
1.45
1.45
V
V
V
BYV36D and E
BYV36F and G
V(BR)R
reverse avalanche breakdown
voltage
IR = 0.1 mA
BYV36A
BYV36B
300
500
700
900
1100
1300
1500
−
−
−
−
−
−
−
−
−
−
−
−
V
V
BYV36C
−
V
BYV36D
−
V
BYV36E
−
V
BYV36F
−
V
BYV36G
−
V
IR
reverse current
VR = VRRMmax; see Fig.22
5
µA
µA
VR = VRRMmax
;
−
150
Tj = 165 °C; see Fig.22
1996 Jul 01
3
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV36 series
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
trr
reverse recovery time
BYV36A to C
when switched from
IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A;
see Fig. 26
−
−
−
−
−
−
100
150
250
ns
BYV36D and E
BYV36F and G
diode capacitance
BYV36A to C
ns
ns
Cd
f = 1 MHz; VR = 0 V;
see Figs 23 and 24
−
−
−
45
40
35
−
−
−
pF
pF
pF
BYV36D and E
BYV36F and G
when switched from
IF = 1 A to VR ≥ 30 V and
dIF/dt = −1 A/µs;
maximum slope of reverse recovery
current
dIR
--------
dt
BYV36A to C
BYV36D and E
BYV36F and G
−
−
−
−
−
−
7
6
5
A/µs
A/µs
A/µs
see Fig.27
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
46
K/W
K/W
100
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.25.
For more information please refer to the “General Part of associated Handbook”.
1996 Jul 01
4
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV36 series
GRAPHICAL DATA
MSA867
MSA866
1.6
1.6
I
I
F(AV)
F(AV)
(A)
(A)
1.2
1.2
0.8
0.4
0
20 15 10 lead length (mm)
20 15 10 lead length (mm)
0.8
0.4
0
o
o
0
100
200
0
100
200
T
( C)
T
( C)
tp
tp
BYV36D and E
BYV36A to C
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
Fig.2 Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
Fig.3 Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
MBD419
MSA865
2.0
1.2
handbook, halfpage
handbook, halfpage
I
F(AV)
I
F(AV)
(A)
(A)
1.6
lead length 10 mm
0.8
1.2
0.8
0.4
0
0.4
0
o
0
100
200
0
100
200
o
T
( C)
T
tp
( C)
amb
BYV36A to C
BYV36F and G
a = 1.42; VR = VRRMmax; δ = 0.5.
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
Device mounted as shown in Fig.25.
Switched mode application.
Fig.4 Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
Fig.5 Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
1996 Jul 01
5
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV36 series
MSA864
MBD420
1.2
1.2
handbook, halfpage
handbook, halfpage
I
I
F(AV)
F(AV)
(A)
(A)
0.8
0.8
0.4
0.4
0
0
0
o
0
100
200
100
200
o
T
( C)
T
( C)
amb
amb
BYV36D and E
BYV36F and G
a = 1.42; VR = VRRMmax; δ = 0.5.
a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig.25.
Switched mode application.
Device mounted as shown in Fig.25.
Switched mode application.
Fig.6 Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
Fig.7 Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
MBD446
20
I
FRM
(A)
= 0.05
δ
16
12
8
0.1
0.2
4
0.5
1
0
10
2
1
2
3
4
10
1
10
10
10
10
t
(ms)
p
BYV36A to C
Ttp = 60°C; Rth j-tp = 46 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 600 V.
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Jul 01
6
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV36 series
MBD447
20
I
FRM
(A)
16
= 0.05
δ
12
8
0.1
0.2
4
0
0.5
1
2
1
2
3
4
10
10
1
10
10
10
10
t
(ms)
p
BYV36D and E
Ttp = 60°C; Rth j-tp = 46 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V.
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MLB529
16
I
FRM
(A)
= 0.05
δ
12
0.1
8
4
0.2
0.5
1
0
10
2
1
2
3
4
10
1
10
10
10
10
t
(ms)
p
BYV36F and G
tp = 60°C; Rth j-tp = 46 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V.
T
Fig.10 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Jul 01
7
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV36 series
MBD441
10
I
FRM
(A)
= 0.05
δ
8
6
4
2
0.1
0.2
0.5
1
0
10
2
1
2
3
4
10
1
10
10
10
10
t
(ms)
p
BYV36A to C
Tamb = 60 °C; Rth j-a = 100 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 600 V.
Fig.11 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MBD444
10
I
FRM
(A)
8
= 0.05
δ
6
4
2
0.1
0.2
0.5
1
0
10
2
1
2
3
4
10
1
10
10
10
10
t
(ms)
p
BYV36D and E
Tamb = 60 °C; Rth j-a = 100 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V.
Fig.12 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Jul 01
8
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV36 series
MLB530
8
= 0.05
δ
I
FRM
(A)
6
0.1
4
2
0.2
0.5
1
0
10
2
1
2
3
4
10
1
10
10
10
10
t
(ms)
p
BYV36F and G
amb = 60 °C; Rth j-a = 100 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V.
T
Fig.13 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MSA861
MSA862
3
3
2.5
2
1.57
1.42
2.5
2
1.57
1.42
P
(W)
P
(W)
a = 3
a = 3
2
2
1
1
0
0
0
1
2
0
1
2
I
(A)
I
(A)
F(AV)
F(AV)
BYV36A to C
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
BYV36D and E
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Fig.14 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
Fig.15 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
1996 Jul 01
9
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV36 series
MSA857
MBD429
200
3
handbook, halfpage
a = 3 2.5 2 1.57 1.42
P
(W)
T
o
j
( C)
2
100
1
0
A
B
C
D
E
0
0
400
800
1200
0
1
2
V
(V)
I
(A)
R
F(AV)
BYV36F and G
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
BYV36A to E
Solid line = VR.
Fig.16 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
Dotted line = VRRM; δ = 0.5.
Fig.17 Maximum permissible junction temperature
as a function of reverse voltage.
MSA863
MLB599
200
10
handbook, halfpage
handbook, halfpage
I
F
(A)
8
T
o
j
( C)
6
4
2
0
100
F
G
0
0
1000
2000
0
1
2
3
V
(V)
V
(V)
R
F
BYV36F and G
BYV36A to C
Solid line = VR.
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
Dotted line = VRRM; δ = 0.5.
Fig.18 Maximum permissible junction temperature
as a function of reverse voltage.
Fig.19 Forward current as a function of forward
voltage; maximum values.
1996 Jul 01
10
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV36 series
MBD424
MLB531
10
10
handbook, halfpage
handbook, halfpage
I
I
F
F
(A)
(A)
8
8
6
4
2
6
4
2
0
0
0
1
2
3
0
1
2
3
4
V
(V)
V (V)
F
F
BYV36D and E
BYV36F and G
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
Fig.20 Forward current as a function of forward
voltage; maximum values.
Fig.21 Forward current as a function of forward
voltage; maximum values.
MGC550
MSA868
3
10
2
10
handbook, halfpage
handbook, halfpage
I
R
(µA)
C
d
(pF)
2
10
BYV36A,B,C
BYV36D,E
10
10
1
1
3
2
1
10
10
10
V
(V)
0
100
200
R
T (°C)
j
BYV36A to E.
VR = VRRMmax
.
f = 1 MHz; Tj = 25 °C.
Fig.22 Reverse current as a function of junction
temperature; maximum values.
Fig.23 Diode capacitance as a function of reverse
voltage, typical values.
1996 Jul 01
11
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV36 series
MBD436
2
10
50
25
handbook, halfpage
handbook, halfpage
C
d
(pF)
7
50
10
2
3
1
2
3
4
1
10
10
10
10
MGA200
V
(V)
R
BYV36F and G.
f = 1 MHz; Tj = 25 °C.
Dimensions in mm.
Fig.24 Diode capacitance as a function of reverse
voltage, typical values.
Fig.25 Device mounted on a printed-circuit board.
DUT
I
F
(A)
+
0.5
t
rr
25 V
10 Ω
1 Ω
50 Ω
0
0.25
0.5
t
I
R
(A)
MAM057
1
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.26 Test circuit and reverse recovery time waveform and definition.
12
1996 Jul 01
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV36 series
I
andbook, halfpage
F
dI
F
dt
t
rr
t
10%
dI
R
dt
100%
I
R
MGC499
Fig.27 Reverse recovery definitions.
1996 Jul 01
13
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV36 series
PACKAGE OUTLINE
k
a
0.81
max
3.81
max
4.57
max
MBC880
28 min
28 min
Dimensions in mm.
The marking band indicates the cathode.
Fig.28 SOD57.
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jul 01
14
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