BYV38 [VISHAY]
Fast Silicon Mesa Rectifiers; 快速硅梅萨整流器
| 型号： | BYV38 |
| 厂家： | 
VISHAY |
| 描述： | Fast Silicon Mesa Rectifiers |
| 文件： | 总4页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYV37.BYV38
Vishay Telefunken
Fast Silicon Mesa Rectifiers
Features
Glass passivated junction
Hermetically sealed package
Low reverse current
Soft recovery characteristics
Applications
94 9539
Fast ”soft recovery” rectifier
Absolute Maximum Ratings
T = 25 C
j
Parameter
Reverse voltage
Test Conditions
Type
BYV37
BYV38
Symbol
Value
800
1000
50
Unit
V
V
V
R
V
R
Peak forward surge current
t =10ms,
p
I
A
FSM
half sinewave
Average forward current
Junction and storage temperature range
T =40 C
amb
I
2
A
C
FAV
T =T
j
–65...+175
stg
Maximum Thermal Resistance
T = 25 C
j
Parameter
Junction ambient
Test Conditions
Symbol
Value
45
100
Unit
K/W
K/W
l=10mm, T =constant
R
thJA
R
thJA
L
on PC board with spacing 25mm
Electrical Characteristics
T = 25 C
j
Parameter
Test Conditions
Type
Symbol Min
Typ Max Unit
Forward voltage
Reverse current
I =1A
V
1.0
1.1
5
150
300
V
A
A
ns
pF
F
F
I
I
R
T =150 C
j
R
Reverse recovery time I =0.5A, I =1A, i =0.25A
Diode Capacitance
t
rr
C
D
F
R
R
V =4V, f=1MHz
R
15
Document Number 86045
Rev. 2, 24-Jun-98
www.vishay.de • FaxBack +1-408-970-5600
1 (4)
BYV37.BYV38
Vishay Telefunken
Characteristics (Tj = 25 C unless otherwise specified)
120
100
80
60
40
20
0
2.5
2.0
1.5
1.0
0.5
0
V =V
half sinewave
R
R RM
R
thJA
=45K/W
l=10mm
l
l
R
=100K/W
thJA
PCB: d=25mm
T =constant
L
30
0
20 40 60 80 100 120 140 160 180
– Ambient Temperature ( °C )
0
5
10
15
20
25
15773
T
amb
94 9552
l – Lead Length ( mm )
Figure 1. Max. Thermal Resistance vs. Lead Length
Figure 4. Max. Average Forward Current vs.
Ambient Temperature
500
10
V
= V
RRM
R
450
400
350
300
250
200
150
100
50
T =175°C
j
R
=
thJA
1
0.1
45K/W
100K/W
160K/W
T =25°C
j
0.01
BYV38
0.001
BYV37
150
0.0001
0
25
50
75
100
125
175
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
– Forward Voltage ( V )
15774
T – Junction Temperature ( °C )
j
15772
V
F
Figure 2. Max. Reverse Power Dissipation vs.
Junction Temperature
Figure 5. Max. Forward Current vs. Forward Voltage
1000
35
V
= V
RRM
f=1MHz
R
30
25
20
15
10
5
100
10
1
0
25
50
75
100
125
150
175
0.1
1.0
V – Reverse Voltage ( V )
R
10.0
100.0
15775
T – Junction Temperature ( °C )
15776
j
Figure 3. Max. Reverse Current vs.
Junction Temperature
Figure 6. Typ. Diode Capacitance vs. Reverse Voltage
www.vishay.de • FaxBack +1-408-970-5600
Document Number 86045
Rev. 2, 24-Jun-98
2 (4)
BYV37.BYV38
Vishay Telefunken
Dimensions in mm
3.6 max.
94 9538
Sintered Glass Case
SOD 57
Weight max. 0.5g
Cathode Identification
technical drawings
according to DIN
specifications
0.82 max.
26 min.
26 min.
4.2 max.
Document Number 86045
Rev. 2, 24-Jun-98
www.vishay.de • FaxBack +1-408-970-5600
3 (4)
BYV37.BYV38
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
Document Number 86045
Rev. 2, 24-Jun-98
4 (4)
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