BYV40E [NXP]
Rectifier diodes ultrafast, rugged; 整流器呃二极管超快，坚固耐用
| 型号： | BYV40E |
| 厂家： | 
NXP |
| 描述： | Rectifier diodes ultrafast, rugged |
| 文件： | 总6页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV40E series
FEATURES
SYMBOL
QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching
VR = 150 V/ 200 V
a1
1
a2
3
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• low profile surface mounting
package
VF ≤ 0.7 V
IO(AV) = 1.5 A
IRRM = 0.1 A
trr ≤ 25 ns
k
2
GENERAL DESCRIPTION
PINNING
SOT223
Dual, common cathode, ultra-fast,
epitaxial rectifier diodes intended
for use as output rectifiers in high
frequency switched mode power
supplies.
PIN
DESCRIPTION
anode 1
cathode
4
1
2
The BYV40E series is supplied in
the SOT223 surface mounting
package.
3
anode 2
cathode
tab
2
3
1
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS
MIN.
MAX.
UNIT
BYV40E
-150
150
150
150
-200
200
200
200
VRRM
VRWM
VR
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
-
-
-
V
V
V
Tsp ≤ 120˚C
IO(AV)
IFRM
IFSM
Average rectified output current square wave; δ = 0.5;
-
1.5
1.5
A
(both diodes conducting)1
Tsp ≤ 132˚C
Repetitive peak forward current t = 25 µs; δ = 0.5;
-
A
per diode
Non-repetitive peak forward
current per diode
Tsp ≤ 132 ˚C
tp = 10 ms
-
-
6
6.6
A
A
tp = 8.3 ms
sinusoidal; Tj = 150˚C prior
to surge; with reapplied
VRWM(max)
IRRM
IRSM
Repetitive peak reverse current tp = 2 µs; δ = 0.001
-
-
0.1
0.1
A
A
per diode
Non-repetitive peak reverse
current per diode
tp = 100 µs
Tstg
Tj
Storage temperature
-65
-
150
150
˚C
˚C
Operating junction temperature
1 Neglecting switching and reverse current losses
September 1998
1
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV40E series
ESD LIMITING VALUE
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VC
Electrostatic discharge
capacitor voltage
Human body model;
C = 250 pF; R = 1.5 kΩ
-
8
kV
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-sp
Rth j-a
Thermal resistance
junction to solder point
Thermal resistance
junction to ambient
one or both diodes conducting
-
-
15
K/W
pcb mounted; minimum footprint
pcb mounted; pad area as in fig:11
-
-
156
70
-
-
K/W
K/W
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VF
IR
Forward voltage
Reverse current
IF = 0.5 A; Tj = 150˚C
IF = 1.5 A
-
-
-
-
-
-
0.50
0.82
100
5
0.7
1.0
300
10
V
V
VR = VRWM; Tj = 100 ˚C
VR = VRWM
µA
µA
nC
ns
Qs
trr1
Reverse recovery charge
Reverse recovery time
IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs
IF = 1 A; VR ≥ 30 V;
-dIF/dt = 100 A/µs
IF = 0.5 A to IR = 1 A; Irec = 0.25 A
IF = 2 A; dIF/dt = 20 A/µs
-
11
-
25
trr2
Vfr
Reverse recovery time
Forward recovery voltage
-
-
10
3
20
-
ns
V
September 1998
2
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV40E series
dI
0.5A
IF
I
F
F
dt
t
0A
rr
time
I
= 0.25A
rec
IR
Q
100%
10%
s
trr2
I
I
R
rrm
I = 1A
R
Fig.1. Definition of trr1, Qs and Irrm
Fig.4. Definition of trr2
Tsp(max) / C
PF / W
I
1
0.8
0.6
0.4
0.2
0
135
138
141
F
F
Vo = 0.66 V
Rs = 0.08 Ohms
D = 1.0
0.5
time
0.2
144
147
150
V
0.1
t
p
t
p
I
D =
1.2
T
V
fr
t
T
V
F
0
0.2
0.4
0.6
0.8
1
1.4
time
IF(AV) / A
Fig.2. Definition of Vfr
Fig.5. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
IF(AV) =IF(RMS) x √D.
Tsp(max) / C
a = 1.57
PF / W
R
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
139.5
Vo = 0.66 V
Rs = 0.08 Ohms
141
142.5
144
1.9
D.U.T.
2.2
Voltage Pulse Source
2.8
145.5
147
4
Current
shunt
to ’scope
148.5
150
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
IF(AV) / A
Fig.3. Circuit schematic for trr2
Fig.6. Maximum forward dissipation PF = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV)
.
September 1998
3
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV40E series
Qs / nC
trr / ns
1000
100
IF = 2A
1A
100
10
IF=2A
IF=1A
10
1
1
1
10
dIF/dt (A/us)
100
1
10
dIF/dt(A/us)
100
Fig.7. Maximum trr at Tj = 25 ˚C; per diode
Fig.9. Maximum Qs at Tj = 25 ˚C; per diode
Transient thermal impedance, Zth j-sp (K/W)
100
IF / A
3
Tj=25C
10
1
Tj=150C
2
1
0
TYP
MAX
t
p
t
p
P
0.1
D =
D
T
t
T
0.01
1us
10us 100us 1ms
10ms 100ms
1s
10s
1.5
0
0.5
1.0
pulse width, tp (s)
VF / V
Fig.8. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
Fig.10. Transient thermal impedance; per diode;
Zth j-sp = f(tp).
September 1998
4
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV40E series
MECHANICAL DATA
Dimensions in mm
Net Mass: 0.11 g
6.7
6.3
B
3.1
2.9
0.32
0.24
0.2
M
A
A
4
0.10
0.02
7.3
6.7
3.7
3.3
16
max
13
2
3
1
10
max
1.05
0.85
0.80
0.60
2.3
1.8
max
M
0.1
(4x)
B
4.6
Fig.11. SOT223 surface mounting package.
Notes
1. For further information, refer to Philips publication SC18 " SMD Footprint Design and Soldering Guidelines".
Order code: 9397 750 00505.
2. Epoxy meets UL94 V0 at 1/8".
September 1998
5
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV40E series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1998
6
Rev 1.300
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